Rohm Semiconductor Productos

2SD2144STPU

Rohm Semiconductor

TRANS NPN 20V 0.5A 3PIN SPT

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 820 @ 10mA, 3V
• Power - Max: 300mW
• Frequency - Transition: 350MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: SC-72 Formed Leads
• Supplier Device Package: SPT

Paquete: SC-72 Formed Leads

2SD1857TV2R

Rohm Semiconductor

TRANS NPN 120V 2A ATV

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 2V @ 100mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 5V
• Power - Max: 1W
• Frequency - Transition: 80MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 3-SIP
• Supplier Device Package: ATV

Paquete: 3-SIP

2SB1424T100Q

Rohm Semiconductor

TRANS PNP 20V 3A SOT-89

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 240MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: MPT3

Paquete: TO-243AA

UDZVTE-177.5B

Rohm Semiconductor

DIODE ZENER 7.5V 200MW UMD2

• Voltage - Zener (Nom) (Vz): 7.5V
• Tolerance: -
• Power - Max: 200mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: UMD2

Paquete: SC-90, SOD-323F

KDZLVTFTR62

Rohm Semiconductor

DIODE ZENER 62V 1W SOD123FL

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: -
• Power - Max: 1W
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 5µA @ 47V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL

Paquete: SOD-123F

SCS106AGC

Rohm Semiconductor

DIODE SCHOTTKY 600V 6A TO220AC

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 120µA @ 600V
• Capacitance @ Vr, F: 260pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: 175°C (Max)

Paquete: TO-220-2

BA2901KN-E2

Rohm Semiconductor

IC COMPARATOR QUAD 0.8MA VQFN16

• Type: General Purpose
• Number of Elements: 4
• Output Type: Open Collector
• Voltage - Supply, Single/Dual (±): 2 V ~ 36 V, ±1 V ~ 18 V
• Voltage - Input Offset (Max): 7mV @ 5V
• Current - Input Bias (Max): 0.25µA @ 5V
• Current - Output (Typ): 16mA @ 5V
• Current - Quiescent (Max): 2mA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): -
• Hysteresis: -
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 16-VFQFN
• Mounting Type: Surface Mount
• Supplier Device Package: 16-VQFN (4x4)

Paquete: 16-VFQFN

MCR03ERTF4871

Rohm Semiconductor

RES SMD 4.87K OHM 1% 1/10W 0603

• Resistance: 4.87 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0603 (1608 Metric)

ESR25JZPJ183

Rohm Semiconductor

RES SMD 18K OHM 5% 1/2W 1210

• Resistance: 18 kOhms
• Tolerance: ±5%
• Power (Watts): 0.5W, 1/2W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1210 (3225 Metric)
• Supplier Device Package: 1210
• Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 1210 (3225 Metric)

KTR10EZPF36R5

Rohm Semiconductor

RES SMD 36.5 OHM 1% 1/8W 0805

• Resistance: 36.5 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0805 (2012 Metric)

KTR10EZPF2670

Rohm Semiconductor

RES SMD 267 OHM 1% 1/8W 0805

• Resistance: 267 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0805 (2012 Metric)

KTR10EZPF1133

Rohm Semiconductor

RES SMD 113K OHM 1% 1/8W 0805

• Resistance: 113 kOhms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0805 (2012 Metric)

TRR03EZPF6202

Rohm Semiconductor

RES SMD 62K OHM 1% 1/10W 0603

• Resistance: 62 kOhms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0603 (1608 Metric)

ESR18EZPF3650

Rohm Semiconductor

RES SMD 365 OHM 1% 1/3W 1206

• Resistance: 365 Ohms
• Tolerance: ±1%
• Power (Watts): 0.333W, 1/3W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.126" L x 0.063" W (3.20mm x 1.60mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 1206 (3216 Metric)

KTR03EZPJ392

Rohm Semiconductor

RES SMD 3.9K OHM 5% 1/10W 0603

• Resistance: 3.9 kOhms
• Tolerance: ±5%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0603 (1608 Metric)

TRR01MZPJ120

Rohm Semiconductor

RES SMD 12 OHM 5% 1/16W 0402

• Resistance: 12 Ohms
• Tolerance: ±5%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: Anti-Sulfur
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0402 (1005 Metric)

MCR18ERTJ755

Rohm Semiconductor

RES SMD 7.5M OHM 5% 1/4W 1206

• Resistance: 7.5 MOhms
• Tolerance: ±5%
• Power (Watts): 0.25W, 1/4W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 1206 (3216 Metric)
• Supplier Device Package: 1206
• Size / Dimension: 0.120" L x 0.061" W (3.05mm x 1.55mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 1206 (3216 Metric)

MCR03ERTF26R7

Rohm Semiconductor

RES SMD 26.7 OHM 1% 1/10W 0603

• Resistance: 26.7 Ohms
• Tolerance: ±1%
• Power (Watts): 0.1W, 1/10W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0603 (1608 Metric)
• Supplier Device Package: 0603
• Size / Dimension: 0.063" L x 0.031" W (1.60mm x 0.80mm)
• Height - Seated (Max): 0.022" (0.55mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0603 (1608 Metric)

ESR10EZPJ755

Rohm Semiconductor

RES SMD 7.5M OHM 5% 0.4W 0805

• Resistance: 7.5 MOhms
• Tolerance: ±5%
• Power (Watts): 0.4W
• Composition: Thick Film
• Features: Automotive AEC-Q200, Pulse Withstanding
• Temperature Coefficient: ±200ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0805 (2012 Metric)

KTR10EZPF2210

Rohm Semiconductor

RES SMD 221 OHM 1% 1/8W 0805

• Resistance: 221 Ohms
• Tolerance: ±1%
• Power (Watts): 0.125W, 1/8W
• Composition: Thick Film
• Features: Automotive AEC-Q200, High Voltage
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805
• Size / Dimension: 0.079" L x 0.049" W (2.00mm x 1.25mm)
• Height - Seated (Max): 0.026" (0.65mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0805 (2012 Metric)

MCR006YZPF2701

Rohm Semiconductor

RES SMD 2.7K OHM 1% 1/20W 0201

• Resistance: 2.7 kOhms
• Tolerance: ±1%
• Power (Watts): 0.05W, 1/20W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±250ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 0201 (0603 Metric)
• Supplier Device Package: 0201
• Size / Dimension: 0.024" L x 0.012" W (0.60mm x 0.30mm)
• Height - Seated (Max): 0.010" (0.26mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0201 (0603 Metric)

MCR01MRTF1821

Rohm Semiconductor

RES SMD 1.82K OHM 1% 1/16W 0402

• Resistance: 1.82 kOhms
• Tolerance: ±1%
• Power (Watts): 0.063W, 1/16W
• Composition: Thick Film
• Features: -
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 155°C
• Package / Case: 0402 (1005 Metric)
• Supplier Device Package: 0402
• Size / Dimension: 0.039" L x 0.020" W (1.00mm x 0.50mm)
• Height - Seated (Max): 0.016" (0.40mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 0402 (1005 Metric)

MCR100JZHF6650

Rohm Semiconductor

RES SMD 665 OHM 1% 1W 2512

• Resistance: 665 Ohms
• Tolerance: ±1%
• Power (Watts): 1W
• Composition: Thick Film
• Features: Automotive AEC-Q200
• Temperature Coefficient: ±100ppm/°C
• Operating Temperature: -55°C ~ 125°C
• Package / Case: 2512 (6432 Metric)
• Supplier Device Package: 2512
• Size / Dimension: 0.248" L x 0.126" W (6.30mm x 3.20mm)
• Height - Seated (Max): 0.028" (0.70mm)
• Number of Terminations: 2
• Failure Rate: -

Paquete: 2512 (6432 Metric)

RGS50TSX2GC11

Rohm Semiconductor

IGBT TRENCH FS 1200V 50A TO247N

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Current - Collector Pulsed (Icm): 75 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
• Power - Max: 395 W
• Switching Energy: 1.4mJ (on), 1.65mJ (off)
• Input Type: Standard
• Gate Charge: 67 nC
• Td (on/off) @ 25°C: 37ns/140ns
• Test Condition: 600V, 25A, 10Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

Paquete: -

DTC124EMFHAT2L

Rohm Semiconductor

TRANS PREBIAS NPN 50V 0.1A VMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 22 kOhms
• Resistor - Emitter Base (R2) (Ohms): 22 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VMT3

Paquete: -

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RB095T-40HZC9

Rohm Semiconductor

DIODE ARR SCHOTT 40V 3A TO220FN

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io) (per Diode): 3A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 40 V
• Operating Temperature - Junction: 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220FN

Paquete: -

RV8C010UNHZGG2CR

Rohm Semiconductor

MOSFET N-CH 20V 1A DFN1010-3W

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1W
• Rds On (Max) @ Id, Vgs: 470mOhm @ 500mA, 4.5V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DFN1010-3W
• Package / Case: 3-XFDFN

Paquete: -

BZX84C3V9LT116

Rohm Semiconductor

DIODE ZENER 3.9V 250MW SSD3

• Voltage - Zener (Nom) (Vz): 3.9 V
• Tolerance: ±5.12%
• Power - Max: 250 mW
• Impedance (Max) (Zzt): 90 Ohms
• Current - Reverse Leakage @ Vr: 3 µA @ 1 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SSD3

Paquete: -