Página 36 - ON Semiconductor Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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ON Semiconductor Productos - Transistores - FET, MOSFET - Simple

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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
NVMFS5C430NWFAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paquete: 8-PowerTDFN, 5 Leads
En existencias2.848
MOSFET (Metal Oxide)
40V
35A (Ta), 185A (Tc)
10V
3.5V @ 250µA
47nC @ 10V
3300pF @ 25V
±20V
-
3.8W (Ta), 106W (Tc)
1.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NVMFS5C430NWFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias5.264
MOSFET (Metal Oxide)
40V
-
10V
3.5V @ 250µA
47nC @ 10V
3300pF @ 25V
±20V
-
3.8W (Ta), 106W (Tc)
1.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
2SK3816-DL-1E
ON Semiconductor

MOSFET N-CH 60V 40A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1780pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.65W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias6.128
MOSFET (Metal Oxide)
60V
40A (Ta)
4V, 10V
-
40nC @ 10V
1780pF @ 20V
±20V
-
1.65W (Ta), 50W (Tc)
26 mOhm @ 20A, 10V
150°C (TJ)
Surface Mount
TO-263-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C426NWFAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paquete: 8-PowerTDFN, 5 Leads
En existencias5.296
MOSFET (Metal Oxide)
40V
41A (Ta), 235A (Tc)
10V
3.5V @ 250µA
65nC @ 10V
4300pF @ 25V
±20V
-
3.8W (Ta), 128W (Tc)
1.3 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NVMFS5C426NWFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias3.008
MOSFET (Metal Oxide)
40V
-
10V
3.5V @ 250µA
65nC @ 10V
4300pF @ 25V
±20V
-
3.8W (Ta), 128W (Tc)
1.3 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NDBA100N10BT4H
ON Semiconductor

MOSFET N-CH 100V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.9 mOhm @ 50A, 15V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias5.376
MOSFET (Metal Oxide)
100V
100A (Ta)
10V, 15V
4V @ 1mA
35nC @ 10V
2950pF @ 50V
±20V
-
110W (Tc)
6.9 mOhm @ 50A, 15V
175°C (TJ)
Surface Mount
D2PAK (TO-263)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot NTB5405NT4G
ON Semiconductor

MOSFET N-CH 40V 116A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 88nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 32V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 40A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias43.320
MOSFET (Metal Oxide)
40V
116A (Tc)
5V, 10V
3.5V @ 250µA
88nC @ 10V
4000pF @ 32V
±20V
-
3W (Ta), 150W (Tc)
5.8 mOhm @ 40A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NVMFS5C430NLAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paquete: 8-PowerTDFN, 5 Leads
En existencias3.312
MOSFET (Metal Oxide)
40V
38A (Ta), 200A (Tc)
4.5V, 10V
2V @ 250µA
70nC @ 10V
4300pF @ 20V
±20V
-
3.8W (Ta), 110W (Tc)
1.4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NVMFS5C430NLT1G
ON Semiconductor

MOSFET N-CH 40V 200A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias5.056
MOSFET (Metal Oxide)
40V
-
4.5V, 10V
2V @ 250µA
70nC @ 10V
4300pF @ 20V
±20V
-
3.8W (Ta), 110W (Tc)
1.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NVMFS5C628NLWFAFT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 135µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paquete: 8-PowerTDFN, 5 Leads
En existencias5.648
MOSFET (Metal Oxide)
60V
28A (Ta), 150A (Tc)
4.5V, 10V
2V @ 135µA
52nC @ 10V
3600pF @ 25V
±20V
-
3.7W (Ta), 110W (Tc)
2.4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NVMFS5C628NLWFT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 135µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias5.856
MOSFET (Metal Oxide)
60V
-
4.5V, 10V
2V @ 135µA
52nC @ 10V
3600pF @ 25V
±20V
-
3.7W (Ta), 110W (Tc)
2.4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NDD60N550U1-35G
ON Semiconductor

MOSFET N-CH 600V 8.2A IPAK-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias5.904
MOSFET (Metal Oxide)
600V
8.2A (Tc)
10V
4V @ 250µA
18nC @ 10V
540pF @ 50V
±25V
-
94W (Tc)
550 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
NDD60N550U1-1G
ON Semiconductor

MOSFET N-CH 600V 8.2A IPAK-4

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 8.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias5.616
MOSFET (Metal Oxide)
600V
8.2A (Tc)
10V
4V @ 250µA
18nC @ 10V
540pF @ 50V
±25V
-
94W (Tc)
550 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
NDPL100N10BG
ON Semiconductor

MOSFET N-CH 100V 100A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V, 15V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 50A, 15V
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias2.192
MOSFET (Metal Oxide)
100V
100A (Ta)
10V, 15V
4V @ 1mA
35nC @ 10V
2950pF @ 50V
±20V
-
2.1W (Ta), 110W (Tc)
7.2 mOhm @ 50A, 15V
175°C (TJ)
Through Hole
TO-220-3
TO-220-3
NVB6412ANT4G
ON Semiconductor

MOSFET N-CH 100V 59A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3500pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 18.2 mOhm @ 58A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-3
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias4.704
MOSFET (Metal Oxide)
100V
58A (Tc)
10V
4V @ 250µA
100nC @ 10V
3500pF @ 25V
±20V
-
167W (Tc)
18.2 mOhm @ 58A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-3
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NTMFS5C430NT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paquete: 8-PowerTDFN, 5 Leads
En existencias5.760
MOSFET (Metal Oxide)
40V
35A (Ta), 185A (Tc)
10V
3.5V @ 250µA
47nC @ 10V
3300pF @ 25V
±20V
-
3.8W (Ta), 106W (Tc)
1.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NVMFS5C430NLWFAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paquete: 8-PowerTDFN, 5 Leads
En existencias5.472
MOSFET (Metal Oxide)
40V
38A (Ta), 200A (Tc)
4.5V, 10V
2V @ 250µA
70nC @ 10V
4300pF @ 20V
±20V
-
3.8W (Ta), 110W (Tc)
1.4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NVMFS5C430NLWFT3G
ON Semiconductor

MOSFET N-CH 40V 200A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias3.680
MOSFET (Metal Oxide)
40V
-
4.5V, 10V
2V @ 250µA
70nC @ 10V
4300pF @ 20V
±20V
-
3.8W (Ta), 110W (Tc)
1.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NVMFS5C430NAFT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paquete: 8-PowerTDFN, 5 Leads
En existencias7.088
MOSFET (Metal Oxide)
40V
35A (Ta), 185A (Tc)
10V
3.5V @ 250µA
47nC @ 10V
3300pF @ 25V
±20V
-
3.8W (Ta), 106W (Tc)
1.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NVMFS5C430NT1G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias6.544
MOSFET (Metal Oxide)
40V
-
10V
3.5V @ 250µA
47nC @ 10V
3300pF @ 25V
±20V
-
3.8W (Ta), 106W (Tc)
1.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NDD60N360U1T4G
ON Semiconductor

MOSFET N-CH 600V 114A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 114W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias4.304
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
4V @ 250µA
26nC @ 10V
790pF @ 50V
±25V
-
114W (Tc)
360 mOhm @ 5.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63
NVMFS5C426NAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 235A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paquete: 8-PowerTDFN, 5 Leads
En existencias5.840
MOSFET (Metal Oxide)
40V
41A (Ta), 235A (Tc)
10V
3.5V @ 250µA
65nC @ 10V
4300pF @ 25V
±20V
-
3.8W (Ta), 128W (Tc)
1.3 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NVMFS5C426NT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias7.952
MOSFET (Metal Oxide)
40V
-
10V
3.5V @ 250µA
65nC @ 10V
4300pF @ 25V
±20V
-
3.8W (Ta), 128W (Tc)
1.3 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NTP4813NLG
ON Semiconductor

MOSFET N-CH 30V 40A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 11.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 895pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 13.1 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias7.568
MOSFET (Metal Oxide)
30V
10.2A (Ta)
4.5V, 10V
2.5V @ 250µA
17nC @ 11.5V
895pF @ 12V
±20V
-
2.4W (Ta), 60W (Tc)
13.1 mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
NVMFS5C430NWFAFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 185A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN, 5 Leads
Paquete: 8-PowerTDFN, 5 Leads
En existencias2.192
MOSFET (Metal Oxide)
40V
35A (Ta), 185A (Tc)
10V
3.5V @ 250µA
47nC @ 10V
3300pF @ 25V
±20V
-
3.8W (Ta), 106W (Tc)
1.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN, 5 Leads
NVMFS5C430NWFT3G
ON Semiconductor

MOSFET N-CH 40V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 47nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias5.808
MOSFET (Metal Oxide)
40V
-
10V
3.5V @ 250µA
47nC @ 10V
3300pF @ 25V
±20V
-
3.8W (Ta), 106W (Tc)
1.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
hot NTMFS5C430NLT1G
ON Semiconductor

MOSFET N-CH 40V 200A SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 70nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4300pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias144.000
MOSFET (Metal Oxide)
40V
-
4.5V, 10V
2V @ 250µA
70nC @ 10V
4300pF @ 20V
±20V
-
3.8W (Ta), 110W (Tc)
1.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
NVD5890NT4G-VF01
ON Semiconductor

MOSFET N-CH 40V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 123A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4760pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias3.072
MOSFET (Metal Oxide)
40V
24A (Ta), 123A (Tc)
10V
3.5V @ 250µA
100nC @ 10V
4760pF @ 25V
±20V
-
4W (Ta), 107W (Tc)
3.7 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
DPAK-3
TO-252-3, DPak (2 Leads + Tab), SC-63