Página 10 - Microsemi Corporation Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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Microsemi Corporation Productos - Transistores - FET, MOSFET - Simple

Registros 613
Página  10/22
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APT80F60J
Microsemi Corporation

MOSFET N-CH 600V 84A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 84A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 598nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 23994pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 961W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias3.472
MOSFET (Metal Oxide)
600V
84A
10V
5V @ 2.5mA
598nC @ 10V
23994pF @ 25V
±30V
-
961W (Tc)
55 mOhm @ 60A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT45M100J
Microsemi Corporation

MOSFET N-CH 1000V 45A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 45A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 33A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias7.024
MOSFET (Metal Oxide)
1000V
45A
10V
5V @ 2.5mA
570nC @ 10V
18500pF @ 25V
±30V
-
960W (Tc)
180 mOhm @ 33A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT80M60J
Microsemi Corporation

MOSFET N-CH 600V 84A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 84A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias4.592
MOSFET (Metal Oxide)
600V
84A
10V
5V @ 5mA
600nC @ 10V
24000pF @ 25V
±30V
-
960W (Tc)
55 mOhm @ 60A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APL602LG
Microsemi Corporation

MOSFET N-CH 600V 49A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 730W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 24.5A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264 [L]
  • Package / Case: TO-264-3, TO-264AA
Paquete: TO-264-3, TO-264AA
En existencias4.656
MOSFET (Metal Oxide)
600V
49A (Tc)
12V
4V @ 2.5mA
-
9000pF @ 25V
±30V
-
730W (Tc)
125 mOhm @ 24.5A, 12V
-55°C ~ 150°C (TJ)
Through Hole
TO-264 [L]
TO-264-3, TO-264AA
APTC90DAM60T1G
Microsemi Corporation

MOSFET N-CH 900V 59A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 59A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 462W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
Paquete: SP1
En existencias7.952
MOSFET (Metal Oxide)
900V
59A
10V
3.5V @ 6mA
540nC @ 10V
13600pF @ 100V
±20V
Super Junction
462W (Tc)
60 mOhm @ 52A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTC90SKM60T1G
Microsemi Corporation

MOSFET N-CH 900V 59A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 59A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 462W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
Paquete: SP1
En existencias5.488
MOSFET (Metal Oxide)
900V
59A
10V
3.5V @ 6mA
540nC @ 10V
13600pF @ 100V
±20V
Super Junction
462W (Tc)
60 mOhm @ 52A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
hot APT32F120J
Microsemi Corporation

MOSFET N-CH 1200V 33A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 33A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 18200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 960W (Tc)
  • Rds On (Max) @ Id, Vgs: 320 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias14.220
MOSFET (Metal Oxide)
1200V
33A
10V
5V @ 2.5mA
560nC @ 10V
18200pF @ 25V
±30V
-
960W (Tc)
320 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APL602B2G
Microsemi Corporation

MOSFET N-CH 600V 49A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 12V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 730W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 24.5A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
Paquete: TO-247-3 Variant
En existencias3.152
MOSFET (Metal Oxide)
600V
49A (Tc)
12V
4V @ 2.5mA
-
9000pF @ 25V
±30V
-
730W (Tc)
125 mOhm @ 24.5A, 12V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
hot JANTX2N6804
Microsemi Corporation

MOSFET P-CH 100V 11A TO-204AA

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-204AA
  • Package / Case: TO-204AA, TO-3
Paquete: TO-204AA, TO-3
En existencias5.056
MOSFET (Metal Oxide)
100V
11A (Tc)
10V
4V @ 250µA
29nC @ 10V
-
±20V
-
4W (Ta), 75W (Tc)
360 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-204AA
TO-204AA, TO-3
APL502B2G
Microsemi Corporation

MOSFET N-CH 500V 58A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 730W (Tc)
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 29A, 12V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
Paquete: TO-247-3 Variant
En existencias3.296
MOSFET (Metal Oxide)
500V
58A (Tc)
15V
4V @ 2.5mA
-
9000pF @ 25V
±30V
-
730W (Tc)
90 mOhm @ 29A, 12V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
APT50M50JLL
Microsemi Corporation

MOSFET N-CH 500V 71A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 71A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 595W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 35.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias4.576
MOSFET (Metal Oxide)
500V
71A
10V
5V @ 5mA
200nC @ 10V
10550pF @ 25V
±30V
-
595W (Tc)
50 mOhm @ 35.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT5010JVRU3
Microsemi Corporation

MOSFET N-CH 500V 44A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 44A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 312nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7410pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias4.640
MOSFET (Metal Oxide)
500V
44A
10V
4V @ 2.5mA
312nC @ 10V
7410pF @ 25V
±30V
-
450W (Tc)
100 mOhm @ 22A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT80SM120S
Microsemi Corporation

POWER MOSFET - SIC

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D3Pak
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias2.064
SiCFET (Silicon Carbide)
1200V
80A (Tc)
20V
2.5V @ 1mA
235nC @ 20V
-
+25V, -10V
-
625W (Tc)
55 mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Surface Mount
D3Pak
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
APTML10UM09R004T1AG
Microsemi Corporation

MOSFET N-CH 100V 154A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
Paquete: SP1
En existencias3.216
MOSFET (Metal Oxide)
100V
154A (Tc)
10V
4V @ 2.5mA
-
9875pF @ 25V
±30V
-
480W (Tc)
10 mOhm @ 69.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTML20UM18R010T1AG
Microsemi Corporation

MOSFET N-CH 200V 109A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 9880pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 50A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
Paquete: SP1
En existencias5.920
MOSFET (Metal Oxide)
200V
109A (Tc)
10V
4V @ 2.5mA
-
9880pF @ 25V
±30V
-
480W (Tc)
19 mOhm @ 50A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APT10035JLL
Microsemi Corporation

MOSFET N-CH 1000V 25A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias5.856
MOSFET (Metal Oxide)
1000V
25A
10V
5V @ 2.5mA
186nC @ 10V
5185pF @ 25V
±30V
-
520W (Tc)
350 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT80SM120B
Microsemi Corporation

POWER MOSFET - SIC

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 235nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 555W (Tc)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias6.400
SiCFET (Silicon Carbide)
1200V
80A (Tc)
20V
2.5V @ 1mA
235nC @ 20V
-
+25V, -10V
-
555W (Tc)
55 mOhm @ 40A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247
TO-247-3
APTC60DAM24T1G
Microsemi Corporation

MOSFET N-CH 600V 95A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 462W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
Paquete: SP1
En existencias5.440
MOSFET (Metal Oxide)
600V
95A
10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
±20V
-
462W (Tc)
24 mOhm @ 47.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APT60M75L2FLLG
Microsemi Corporation

MOSFET N-CH 600V 73A TO-264MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 893W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX? [L2]
  • Package / Case: TO-264-3, TO-264AA
Paquete: TO-264-3, TO-264AA
En existencias3.840
MOSFET (Metal Oxide)
600V
73A (Tc)
10V
5V @ 5mA
195nC @ 10V
8930pF @ 25V
±30V
-
893W (Tc)
75 mOhm @ 36.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
264 MAX? [L2]
TO-264-3, TO-264AA
APT60M75L2LLG
Microsemi Corporation

MOSFET N-CH 600V 73A TO-264MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 893W (Tc)
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 36.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX? [L2]
  • Package / Case: TO-264-3, TO-264AA
Paquete: TO-264-3, TO-264AA
En existencias2.416
MOSFET (Metal Oxide)
600V
73A (Tc)
10V
5V @ 5mA
195nC @ 10V
8930pF @ 25V
±30V
-
893W (Tc)
75 mOhm @ 36.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
264 MAX? [L2]
TO-264-3, TO-264AA
APT12057B2FLLG
Microsemi Corporation

MOSFET N-CH 1200V 22A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 570 mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
Paquete: TO-247-3 Variant
En existencias4.176
MOSFET (Metal Oxide)
1200V
22A (Tc)
10V
5V @ 2.5mA
185nC @ 10V
5155pF @ 25V
±30V
-
690W (Tc)
570 mOhm @ 11A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
APTM120DA30T1G
Microsemi Corporation

MOSFET N-CH 1200V 31A SP1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 31A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14560pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 657W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 25A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP1
  • Package / Case: SP1
Paquete: SP1
En existencias6.496
MOSFET (Metal Oxide)
1200V
31A
10V
5V @ 2.5mA
560nC @ 10V
14560pF @ 25V
±30V
-
657W (Tc)
360 mOhm @ 25A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APT33N90JCCU2
Microsemi Corporation

MOSFET N-CH 900V 33A SOT227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 33A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 290W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias6.960
MOSFET (Metal Oxide)
900V
33A
10V
3.5V @ 3mA
270nC @ 10V
6800pF @ 100V
±20V
Super Junction
290W (Tc)
120 mOhm @ 26A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT6013JLL
Microsemi Corporation

MOSFET N-CH 600V 39A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5630pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 460W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 19.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias5.152
MOSFET (Metal Oxide)
600V
39A
10V
5V @ 2.5mA
130nC @ 10V
5630pF @ 25V
±30V
-
460W (Tc)
130 mOhm @ 19.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT70SM70J
Microsemi Corporation

POWER MOSFET - SIC

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): +25V, -10V
  • FET Feature: -
  • Power Dissipation (Max): 165W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 32.5A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias2.032
SiCFET (Silicon Carbide)
700V
49A (Tc)
20V
2.5V @ 1mA
125nC @ 20V
-
+25V, -10V
-
165W (Tc)
70 mOhm @ 32.5A, 20V
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
APT30M40JVFR
Microsemi Corporation

MOSFET N-CH 300V 70A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 70A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 425nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 450W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias2.688
MOSFET (Metal Oxide)
300V
70A
10V
4V @ 2.5mA
425nC @ 10V
10200pF @ 25V
±30V
-
450W (Tc)
40 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT29F80J
Microsemi Corporation

MOSFET N-CH 800V 31A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 31A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 303nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9326pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 210 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias7.856
MOSFET (Metal Oxide)
800V
31A
10V
5V @ 2.5mA
303nC @ 10V
9326pF @ 25V
±30V
-
543W (Tc)
210 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT60M80L2VRG
Microsemi Corporation

MOSFET N-CH 600V 65A TO-264MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 590nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 833W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 32.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: 264 MAX? [L2]
  • Package / Case: TO-264-3, TO-264AA
Paquete: TO-264-3, TO-264AA
En existencias7.696
MOSFET (Metal Oxide)
600V
65A (Tc)
10V
4V @ 5mA
590nC @ 10V
13300pF @ 25V
±30V
-
833W (Tc)
80 mOhm @ 32.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
264 MAX? [L2]
TO-264-3, TO-264AA