Microsemi Corporation Productos - Transistores - FET, MOSFET - Simple

APT40SM120S

Microsemi Corporation

MOSFET N-CH 1200V 41A D3PAK

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 3V @ 1mA (Typ)
Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 273W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3Pak
Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

En existencias18.444

SiCFET (Silicon Carbide)

1200V

41A (Tc)

20V

3V @ 1mA (Typ)

130nC @ 20V

2560pF @ 1000V

+25V, -10V

-

273W (Tc)

100 mOhm @ 20A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

D3Pak

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

APT37M100L

Microsemi Corporation

MOSFET N-CH 1000V 37A TO-264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 1135W (Tc)
Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-264
Package / Case: TO-264-3, TO-264AA

Paquete: TO-264-3, TO-264AA

En existencias6.288

MOSFET (Metal Oxide)

1000V

37A (Tc)

10V

5V @ 2.5mA

305nC @ 10V

9835pF @ 25V

±30V

-

1135W (Tc)

330 mOhm @ 18A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-264

TO-264-3, TO-264AA

APT7M120B

Microsemi Corporation

MOSFET N-CH 1200V 8A TO247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 335W (Tc)
Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247 [B]
Package / Case: TO-247-3

Paquete: TO-247-3

En existencias104.256

MOSFET (Metal Oxide)

1200V

8A (Tc)

10V

5V @ 1mA

80nC @ 10V

2565pF @ 25V

±30V

-

335W (Tc)

2.5 Ohm @ 3A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247 [B]

TO-247-3

APT5020SVRG

Microsemi Corporation

MOSFET N-CH 500V 26A D3PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Paquete: -

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MOSFET (Metal Oxide)

500 V

26A (Tc)

10V

4V @ 1mA

225 nC @ 10 V

4440 pF @ 25 V

-

200mOhm @ 500mA, 10V

-

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

JANSF2N7383

Microsemi Corporation

P CHANNEL MOSFET TO-257

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paquete: -

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-

6.5A (Tc)

-

APT5SM170B

Microsemi Corporation

SICFET N-CH 1700V 5A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 3.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 249 pF @ 1000 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.5A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Paquete: -

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SiCFET (Silicon Carbide)

1700 V

5A (Tc)

20V

3.2V @ 500µA

21 nC @ 20 V

249 pF @ 1000 V

+25V, -10V

-

65W (Tc)

1.25Ohm @ 2.5A, 20V

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

APT5SM170S

Microsemi Corporation

SICFET N-CH 1700V 4.6A D3PAK

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1700 V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 3.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 1000 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Paquete: -

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SiCFET (Silicon Carbide)

1700 V

4.6A (Tc)

20V

3.2V @ 500µA

29 nC @ 20 V

325 pF @ 1000 V

+25V, -10V

-

52W (Tc)

1.2Ohm @ 2A, 20V

-55°C ~ 175°C (TJ)

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

JANSR2N7389U

Microsemi Corporation

MOSFET P-CH 100V 6.5A 18ULCC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 12V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC

Paquete: -

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MOSFET (Metal Oxide)

100 V

6.5A (Tc)

12V

4V @ 1mA

45 nC @ 12 V

-

±20V

-

25W (Tc)

350mOhm @ 6.5A, 12V

-55°C ~ 150°C

Surface Mount

18-ULCC (9.14x7.49)

18-CLCC

MSC090SMA120B

Microsemi Corporation

MOSFET N-CH 1200V TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Paquete: -

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-

Through Hole

TO-247-3

JANSR2N7269U

Microsemi Corporation

MOSFET N-CH 200V 26A U1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Supplier Device Package: U1 (SMD-1)
Package / Case: 3-SMD, No Lead

Paquete: -

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MOSFET (Metal Oxide)

200 V

26A (Tc)

12V

4V @ 1mA

170 nC @ 12 V

-

±20V

-

150W (Tc)

110mOhm @ 26A, 12V

-55°C ~ 150°C

Surface Mount

U1 (SMD-1)

3-SMD, No Lead

JANSR2N7261U

Microsemi Corporation

MOSFET N-CH 100V 8A 18ULCC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 8A, 12V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC

Paquete: -

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MOSFET (Metal Oxide)

100 V

8A (Tc)

12V

4V @ 1mA

50 nC @ 12 V

-

±20V

-

25W (Tc)

185mOhm @ 8A, 12V

-55°C ~ 150°C

Surface Mount

18-ULCC (9.14x7.49)

18-CLCC

JANSR2N7262U

Microsemi Corporation

MOSFET N-CH 200V 5.5A 18ULCC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 364mOhm @ 5.5A, 12V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Supplier Device Package: 18-ULCC (9.14x7.49)
Package / Case: 18-CLCC

Paquete: -

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MOSFET (Metal Oxide)

200 V

5.5A (Tc)

12V

4V @ 1mA

50 nC @ 12 V

-

±20V

-

25W (Tc)

364mOhm @ 5.5A, 12V

-55°C ~ 150°C

Surface Mount

18-ULCC (9.14x7.49)

18-CLCC

JANSR2N7268U

Microsemi Corporation

MOSFET N-CH 100V 34A U1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 34A, 12V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Supplier Device Package: U1 (SMD-1)
Package / Case: 3-SMD, No Lead

Paquete: -

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MOSFET (Metal Oxide)

100 V

34A (Tc)

12V

4V @ 1mA

160 nC @ 12 V

-

±20V

-

150W (Tc)

70mOhm @ 34A, 12V

-55°C ~ 150°C

Surface Mount

U1 (SMD-1)

3-SMD, No Lead

APT130SM70J

Microsemi Corporation

SICFET N-CH 700V 78A SOT227

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 273W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227 (ISOTOP®)
Package / Case: SOT-227-4, miniBLOC

Paquete: -

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SiCFET (Silicon Carbide)

700 V

78A (Tc)

20V

2.4V @ 1mA

270 nC @ 20 V

3950 pF @ 700 V

+25V, -10V

-

273W (Tc)

45mOhm @ 60A, 20V

-55°C ~ 175°C (TJ)

Chassis Mount

SOT-227 (ISOTOP®)

SOT-227-4, miniBLOC

APT130SM70B

Microsemi Corporation

SICFET N-CH 700V 110A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 556W (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Paquete: -

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SiCFET (Silicon Carbide)

700 V

110A (Tc)

20V

2.4V @ 1mA

220 nC @ 20 V

3950 pF @ 700 V

+25V, -10V

-

556W (Tc)

45mOhm @ 60A, 20V

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

APT130SM70S

Microsemi Corporation

MOSFET N-CH 700V D3PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paquete: -

Request a Quote

-

APT35SM70B

Microsemi Corporation

SICFET N-CH 700V 35A TO247-3

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 700 V
Vgs (Max): +25V, -10V
FET Feature: -
Power Dissipation (Max): 176W (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 20V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Paquete: -

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SiCFET (Silicon Carbide)

700 V

35A (Tc)

20V

2.5V @ 1mA

67 nC @ 20 V

1035 pF @ 700 V

+25V, -10V

-

176W (Tc)

145mOhm @ 10A, 20V

-55°C ~ 175°C (TJ)

Through Hole

TO-247-3

APT35SM70S

Microsemi Corporation

SICFET 700V 35A TO247-3

FET Type: -
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 35A
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-247-3
Package / Case: TO-247-3

Paquete: -

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SiCFET (Silicon Carbide)

700 V

35A

-

Through Hole

TO-247-3

JANSR2N7380

Microsemi Corporation

MOSFET N-CH 100V 14.4A TO257

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 14.4A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-257
Package / Case: TO-257-3

Paquete: -

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MOSFET (Metal Oxide)

100 V

14.4A (Tc)

12V

4V @ 1mA

40 nC @ 12 V

-

±20V

-

2W (Ta), 75W (Tc)

200mOhm @ 14.4A, 12V

-55°C ~ 150°C (TJ)

Through Hole

TO-257

TO-257-3

JANSR2N7381

Microsemi Corporation

MOSFET N-CH 200V 9.4A TO257

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 9.4A, 12V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-257
Package / Case: TO-257-3

Paquete: -

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MOSFET (Metal Oxide)

200 V

9.4A (Tc)

12V

4V @ 1mA

50 nC @ 12 V

-

±20V

-

2W (Ta), 75W (Tc)

490mOhm @ 9.4A, 12V

-55°C ~ 150°C (TJ)

Through Hole

TO-257

TO-257-3

JANSR2N7389

Microsemi Corporation

MOSFET P-CH 100V 6.5A TO205AF

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 12V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-205AF (TO-39)
Package / Case: TO-205AF Metal Can

Paquete: -

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MOSFET (Metal Oxide)

100 V

6.5A (Tc)

12V

4V @ 1mA

45 nC @ 12 V

-

±20V

-

25W (Tc)

350mOhm @ 6.5A, 12V

-55°C ~ 150°C

Through Hole

TO-205AF (TO-39)

TO-205AF Metal Can

JANSR2N7269

Microsemi Corporation

MOSFET N-CH 200V 26A TO254AA

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200 V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V
Operating Temperature: -55°C ~ 150°C
Mounting Type: Through Hole
Supplier Device Package: TO-254AA
Package / Case: TO-254-3, TO-254AA

Paquete: -

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MOSFET (Metal Oxide)

200 V

26A (Tc)

12V

4V @ 1mA

170 nC @ 12 V

-

±20V

-

150W (Tc)

110mOhm @ 26A, 12V

-55°C ~ 150°C

Through Hole

TO-254AA

TO-254-3, TO-254AA

APT50M80B2VRG

Microsemi Corporation

MOSFET N-CH 500V 58A T-MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 423 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8797 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 80mOhm @ 29A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant

Paquete: -

Request a Quote

MOSFET (Metal Oxide)

500 V

58A (Tc)

10V

4V @ 2.5mA

423 nC @ 10 V

8797 pF @ 25 V

-

80mOhm @ 29A, 10V

-

Through Hole

T-MAX™ [B2]

TO-247-3 Variant

APT6017B2LLG

Microsemi Corporation

MOSFET N-CH 600V 35A T-MAX

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 500W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 17.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: T-MAX™ [B2]
Package / Case: TO-247-3 Variant

Paquete: -

Request a Quote

MOSFET (Metal Oxide)

600 V

35A (Tc)

10V

5V @ 2.5mA

100 nC @ 10 V

4500 pF @ 25 V

±30V

-

500W (Tc)

170mOhm @ 17.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

T-MAX™ [B2]

TO-247-3 Variant

APT8024LVRG

Microsemi Corporation

MOSFET N-CH 800V 33A TO264

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7740 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 240mOhm @ 16.5A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-264 [L]
Package / Case: TO-264-3, TO-264AA

Paquete: -

Request a Quote

MOSFET (Metal Oxide)

800 V

33A (Tc)

10V

4V @ 2.5mA

425 nC @ 10 V

7740 pF @ 25 V

-

240mOhm @ 16.5A, 10V

-

Through Hole

TO-264 [L]

TO-264-3, TO-264AA

MSC280SMA120S

Microsemi Corporation

SICFET N-CH 1.2KV D3PAK

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D3PAK
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Paquete: -

Request a Quote

SiCFET (Silicon Carbide)

1200 V

-

-55°C ~ 175°C (TJ)

Surface Mount

D3PAK

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

APT10043JVR

Microsemi Corporation

MOSFET N-CH 1000V 22A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 22A (Tj)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V
Operating Temperature: -
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC

Paquete: -

Request a Quote

MOSFET (Metal Oxide)

1000 V

22A (Tj)

-

4V @ 1mA

480 nC @ 10 V

9000 pF @ 25 V

-

430mOhm @ 500mA, 10V

-

Chassis Mount

ISOTOP®

SOT-227-4, miniBLOC

MSC750SMA120B

Microsemi Corporation

MOSFET N-CH 1200V TO247

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paquete: -

Request a Quote

-

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
APT40SM120S	Microsemi Corporation	MOSFET N-CH 1200V 41A D3PAK FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3V @ 1mA (Typ) Gate Charge (Qg) (Max) @ Vgs: 130nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 2560pF @ 1000V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 273W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 20A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3Pak Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA	En existencias18.444	SiCFET (Silicon Carbide)	1200V	41A (Tc)	20V	3V @ 1mA (Typ)	130nC @ 20V	2560pF @ 1000V	+25V, -10V	-	273W (Tc)	100 mOhm @ 20A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D3Pak	TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
APT37M100L	Microsemi Corporation	MOSFET N-CH 1000V 37A TO-264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000V Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 9835pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 1135W (Tc) Rds On (Max) @ Id, Vgs: 330 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-264 Package / Case: TO-264-3, TO-264AA	Paquete: TO-264-3, TO-264AA	En existencias6.288	MOSFET (Metal Oxide)	1000V	37A (Tc)	10V	5V @ 2.5mA	305nC @ 10V	9835pF @ 25V	±30V	-	1135W (Tc)	330 mOhm @ 18A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-264	TO-264-3, TO-264AA
APT7M120B	Microsemi Corporation	MOSFET N-CH 1200V 8A TO247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1200V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2565pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 335W (Tc) Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247 [B] Package / Case: TO-247-3	Paquete: TO-247-3	En existencias104.256	MOSFET (Metal Oxide)	1200V	8A (Tc)	10V	5V @ 1mA	80nC @ 10V	2565pF @ 25V	±30V	-	335W (Tc)	2.5 Ohm @ 3A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247 [B]	TO-247-3
APT5020SVRG	Microsemi Corporation	MOSFET N-CH 500V 26A D3PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4440 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 200mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	500 V	26A (Tc)	10V	4V @ 1mA	225 nC @ 10 V	4440 pF @ 25 V	-	-	-	200mOhm @ 500mA, 10V	-	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
JANSF2N7383	Microsemi Corporation	P CHANNEL MOSFET TO-257 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paquete: -	Request a Quote	-	-	6.5A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
APT5SM170B	Microsemi Corporation	SICFET N-CH 1700V 5A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 249 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.5A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Paquete: -	Request a Quote	SiCFET (Silicon Carbide)	1700 V	5A (Tc)	20V	3.2V @ 500µA	21 nC @ 20 V	249 pF @ 1000 V	+25V, -10V	-	65W (Tc)	1.25Ohm @ 2.5A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
APT5SM170S	Microsemi Corporation	SICFET N-CH 1700V 4.6A D3PAK FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1700 V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 3.2V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 1000 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Paquete: -	Request a Quote	SiCFET (Silicon Carbide)	1700 V	4.6A (Tc)	20V	3.2V @ 500µA	29 nC @ 20 V	325 pF @ 1000 V	+25V, -10V	-	52W (Tc)	1.2Ohm @ 2A, 20V	-55°C ~ 175°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
JANSR2N7389U	Microsemi Corporation	MOSFET P-CH 100V 6.5A 18ULCC FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 12V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	100 V	6.5A (Tc)	12V	4V @ 1mA	45 nC @ 12 V	-	±20V	-	25W (Tc)	350mOhm @ 6.5A, 12V	-55°C ~ 150°C	Surface Mount	18-ULCC (9.14x7.49)	18-CLCC
MSC090SMA120B	Microsemi Corporation	MOSFET N-CH 1200V TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-3	TO-247-3
JANSR2N7269U	Microsemi Corporation	MOSFET N-CH 200V 26A U1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: U1 (SMD-1) Package / Case: 3-SMD, No Lead	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	200 V	26A (Tc)	12V	4V @ 1mA	170 nC @ 12 V	-	±20V	-	150W (Tc)	110mOhm @ 26A, 12V	-55°C ~ 150°C	Surface Mount	U1 (SMD-1)	3-SMD, No Lead
JANSR2N7261U	Microsemi Corporation	MOSFET N-CH 100V 8A 18ULCC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 8A, 12V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	100 V	8A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	-	±20V	-	25W (Tc)	185mOhm @ 8A, 12V	-55°C ~ 150°C	Surface Mount	18-ULCC (9.14x7.49)	18-CLCC
JANSR2N7262U	Microsemi Corporation	MOSFET N-CH 200V 5.5A 18ULCC FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 364mOhm @ 5.5A, 12V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: 18-ULCC (9.14x7.49) Package / Case: 18-CLCC	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	200 V	5.5A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	-	±20V	-	25W (Tc)	364mOhm @ 5.5A, 12V	-55°C ~ 150°C	Surface Mount	18-ULCC (9.14x7.49)	18-CLCC
JANSR2N7268U	Microsemi Corporation	MOSFET N-CH 100V 34A U1 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 34A, 12V Operating Temperature: -55°C ~ 150°C Mounting Type: Surface Mount Supplier Device Package: U1 (SMD-1) Package / Case: 3-SMD, No Lead	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	100 V	34A (Tc)	12V	4V @ 1mA	160 nC @ 12 V	-	±20V	-	150W (Tc)	70mOhm @ 34A, 12V	-55°C ~ 150°C	Surface Mount	U1 (SMD-1)	3-SMD, No Lead
APT130SM70J	Microsemi Corporation	SICFET N-CH 700V 78A SOT227 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 273W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: SOT-227 (ISOTOP®) Package / Case: SOT-227-4, miniBLOC	Paquete: -	Request a Quote	SiCFET (Silicon Carbide)	700 V	78A (Tc)	20V	2.4V @ 1mA	270 nC @ 20 V	3950 pF @ 700 V	+25V, -10V	-	273W (Tc)	45mOhm @ 60A, 20V	-55°C ~ 175°C (TJ)	Chassis Mount	SOT-227 (ISOTOP®)	SOT-227-4, miniBLOC
APT130SM70B	Microsemi Corporation	SICFET N-CH 700V 110A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3950 pF @ 700 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 556W (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 60A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Paquete: -	Request a Quote	SiCFET (Silicon Carbide)	700 V	110A (Tc)	20V	2.4V @ 1mA	220 nC @ 20 V	3950 pF @ 700 V	+25V, -10V	-	556W (Tc)	45mOhm @ 60A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
APT130SM70S	Microsemi Corporation	MOSFET N-CH 700V D3PAK FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
APT35SM70B	Microsemi Corporation	SICFET N-CH 700V 35A TO247-3 FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 20V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 700 V Vgs (Max): +25V, -10V FET Feature: - Power Dissipation (Max): 176W (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 10A, 20V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Paquete: -	Request a Quote	SiCFET (Silicon Carbide)	700 V	35A (Tc)	20V	2.5V @ 1mA	67 nC @ 20 V	1035 pF @ 700 V	+25V, -10V	-	176W (Tc)	145mOhm @ 10A, 20V	-55°C ~ 175°C (TJ)	Through Hole	TO-247-3	TO-247-3
APT35SM70S	Microsemi Corporation	SICFET 700V 35A TO247-3 FET Type: - Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 700 V Current - Continuous Drain (Id) @ 25°C: 35A Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-247-3 Package / Case: TO-247-3	Paquete: -	Request a Quote	SiCFET (Silicon Carbide)	700 V	35A	-	-	-	-	-	-	-	-	-	Through Hole	TO-247-3	TO-247-3
JANSR2N7380	Microsemi Corporation	MOSFET N-CH 100V 14.4A TO257 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 14.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 14.4A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	100 V	14.4A (Tc)	12V	4V @ 1mA	40 nC @ 12 V	-	±20V	-	2W (Ta), 75W (Tc)	200mOhm @ 14.4A, 12V	-55°C ~ 150°C (TJ)	Through Hole	TO-257	TO-257-3
JANSR2N7381	Microsemi Corporation	MOSFET N-CH 200V 9.4A TO257 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta), 75W (Tc) Rds On (Max) @ Id, Vgs: 490mOhm @ 9.4A, 12V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-257 Package / Case: TO-257-3	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	200 V	9.4A (Tc)	12V	4V @ 1mA	50 nC @ 12 V	-	±20V	-	2W (Ta), 75W (Tc)	490mOhm @ 9.4A, 12V	-55°C ~ 150°C (TJ)	Through Hole	TO-257	TO-257-3
JANSR2N7389	Microsemi Corporation	MOSFET P-CH 100V 6.5A TO205AF FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 25W (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 6.5A, 12V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-205AF (TO-39) Package / Case: TO-205AF Metal Can	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	100 V	6.5A (Tc)	12V	4V @ 1mA	45 nC @ 12 V	-	±20V	-	25W (Tc)	350mOhm @ 6.5A, 12V	-55°C ~ 150°C	Through Hole	TO-205AF (TO-39)	TO-205AF Metal Can
JANSR2N7269	Microsemi Corporation	MOSFET N-CH 200V 26A TO254AA FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200 V Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Drive Voltage (Max Rds On, Min Rds On): 12V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 26A, 12V Operating Temperature: -55°C ~ 150°C Mounting Type: Through Hole Supplier Device Package: TO-254AA Package / Case: TO-254-3, TO-254AA	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	200 V	26A (Tc)	12V	4V @ 1mA	170 nC @ 12 V	-	±20V	-	150W (Tc)	110mOhm @ 26A, 12V	-55°C ~ 150°C	Through Hole	TO-254AA	TO-254-3, TO-254AA
APT50M80B2VRG	Microsemi Corporation	MOSFET N-CH 500V 58A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 423 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8797 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 80mOhm @ 29A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	500 V	58A (Tc)	10V	4V @ 2.5mA	423 nC @ 10 V	8797 pF @ 25 V	-	-	-	80mOhm @ 29A, 10V	-	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT6017B2LLG	Microsemi Corporation	MOSFET N-CH 600V 35A T-MAX FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 500W (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 17.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: T-MAX™ [B2] Package / Case: TO-247-3 Variant	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	600 V	35A (Tc)	10V	5V @ 2.5mA	100 nC @ 10 V	4500 pF @ 25 V	±30V	-	500W (Tc)	170mOhm @ 17.5A, 10V	-55°C ~ 150°C (TJ)	Through Hole	T-MAX™ [B2]	TO-247-3 Variant
APT8024LVRG	Microsemi Corporation	MOSFET N-CH 800V 33A TO264 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7740 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 240mOhm @ 16.5A, 10V Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-264 [L] Package / Case: TO-264-3, TO-264AA	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	800 V	33A (Tc)	10V	4V @ 2.5mA	425 nC @ 10 V	7740 pF @ 25 V	-	-	-	240mOhm @ 16.5A, 10V	-	Through Hole	TO-264 [L]	TO-264-3, TO-264AA
MSC280SMA120S	Microsemi Corporation	SICFET N-CH 1.2KV D3PAK FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 1200 V Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D3PAK Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	Paquete: -	Request a Quote	SiCFET (Silicon Carbide)	1200 V	-	-	-	-	-	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	D3PAK	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
APT10043JVR	Microsemi Corporation	MOSFET N-CH 1000V 22A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 22A (Tj) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 480 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9000 pF @ 25 V Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: 430mOhm @ 500mA, 10V Operating Temperature: - Mounting Type: Chassis Mount Supplier Device Package: ISOTOP® Package / Case: SOT-227-4, miniBLOC	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	1000 V	22A (Tj)	-	4V @ 1mA	480 nC @ 10 V	9000 pF @ 25 V	-	-	-	430mOhm @ 500mA, 10V	-	Chassis Mount	ISOTOP®	SOT-227-4, miniBLOC
MSC750SMA120B	Microsemi Corporation	MOSFET N-CH 1200V TO247 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-