Página 5 - Microsemi Corporation Productos - Transistores - FET, MOSFET - Arreglos | Heisener Electronics
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Microsemi Corporation Productos - Transistores - FET, MOSFET - Arreglos

Registros 236
Página  5/9
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Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APTM20DUM04G
Microsemi Corporation

MOSFET 2N-CH 200V 372A SP6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 372A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias7.088
Standard
200V
372A
5 mOhm @ 186A, 10V
5V @ 10mA
560nC @ 10V
28900pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20AM05FG
Microsemi Corporation

MOSFET 2N-CH 200V 317A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 317A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 158.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
  • Power - Max: 1136W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias4.128
Standard
200V
317A
5 mOhm @ 158.5A, 10V
5V @ 10mA
448nC @ 10V
27400pF @ 25V
1136W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20HM10FG
Microsemi Corporation

MOSFET 4N-CH 200V 175A SP6

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 175A
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 87.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 224nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13700pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias6.992
Standard
200V
175A
12 mOhm @ 87.5A, 10V
5V @ 5mA
224nC @ 10V
13700pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM10HM05FG
Microsemi Corporation

MOSFET 4N-CH 100V 278A SP6

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 278A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 125A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias7.968
Standard
100V
278A
5 mOhm @ 125A, 10V
4V @ 5mA
700nC @ 10V
20000pF @ 25V
780W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTML602U12R020T3AG
Microsemi Corporation

MOSFET 2N-CH 600V 45A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 45A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 22.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Power - Max: 568W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
Paquete: SP3
En existencias4.816
Standard
600V
45A
150 mOhm @ 22.5A, 10V
4V @ 2.5mA
-
7600pF @ 25V
568W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTML502UM90R020T3AG
Microsemi Corporation

MOSFET 2N-CH 500V 52A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 52A
  • Rds On (Max) @ Id, Vgs: 108 mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
  • Power - Max: 568W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
Paquete: SP3
En existencias6.560
Standard
500V
52A
108 mOhm @ 26A, 10V
4V @ 2.5mA
-
7600pF @ 25V
568W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTM120A20SG
Microsemi Corporation

MOSFET 2N-CH 1200V 50A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias5.136
Standard
1200V (1.2kV)
50A
240 mOhm @ 25A, 10V
5V @ 6mA
600nC @ 10V
15200pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100TA35FPG
Microsemi Corporation

MOSFET 6N-CH 1000V 22A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 22A
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
Paquete: SP6
En existencias5.824
Standard
1000V (1kV)
22A
420 mOhm @ 11A, 10V
5V @ 2.5mA
186nC @ 10V
5200pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTM120A20DG
Microsemi Corporation

MOSFET 2N-CH 1200V 50A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 50A
  • Rds On (Max) @ Id, Vgs: 240 mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 600nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias4.496
Standard
1200V (1.2kV)
50A
240 mOhm @ 25A, 10V
5V @ 6mA
600nC @ 10V
15200pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100A13DG
Microsemi Corporation

MOSFET 2N-CH 1000V 65A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 65A
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias3.072
Standard
1000V (1kV)
65A
156 mOhm @ 32.5A, 10V
5V @ 6mA
562nC @ 10V
15200pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20DUM05G
Microsemi Corporation

MOSFET 2N-CH 200V 317A SP6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 317A
  • Rds On (Max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 448nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27400pF @ 25V
  • Power - Max: 1136W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias6.848
Standard
200V
317A
6 mOhm @ 158.5A, 10V
5V @ 10mA
448nC @ 10V
27400pF @ 25V
1136W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50TAM65FPG
Microsemi Corporation

MOSFET 6N-CH 500V 51A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 51A
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
Paquete: SP6
En existencias7.040
Standard
500V
51A
78 mOhm @ 25.5A, 10V
5V @ 2.5mA
140nC @ 10V
7000pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTM10DUM02G
Microsemi Corporation

MOSFET 2N-CH 100V 495A SP6

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 495A
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias3.472
Standard
100V
495A
2.5 mOhm @ 200A, 10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20TAM16FPG
Microsemi Corporation

MOSFET 6N-CH 200V 104A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 104A
  • Rds On (Max) @ Id, Vgs: 19 mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7220pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
Paquete: SP6
En existencias4.448
Standard
200V
104A
19 mOhm @ 52A, 10V
5V @ 2.5mA
140nC @ 10V
7220pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTM120TDU57PG
Microsemi Corporation

MOSFET 6N-CH 1200V 17A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 684 mOhm @ 8.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5155pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
Paquete: SP6
En existencias6.048
Standard
1200V (1.2kV)
17A
684 mOhm @ 8.5A, 10V
5V @ 2.5mA
187nC @ 10V
5155pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTSM120AM55CT1AG
Microsemi Corporation

POWER MODULE - SIC

  • FET Type: 2 N-Channel (Dual), Schottky
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 74A (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 3V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 272nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 5120pF @ 1000V
  • Power - Max: 470W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
Paquete: SP1
En existencias2.544
Silicon Carbide (SiC)
1200V (1.2kV)
74A (Tc)
50 mOhm @ 40A, 20V
3V @ 2mA
272nC @ 20V
5120pF @ 1000V
470W
-40°C ~ 175°C (TJ)
Chassis Mount
SP1
SP1
APTM20AM06SG
Microsemi Corporation

MOSFET 2N-CH 200V 300A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 300A
  • Rds On (Max) @ Id, Vgs: 7.2 mOhm @ 150A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 325nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias7.696
Standard
200V
300A
7.2 mOhm @ 150A, 10V
5V @ 6mA
325nC @ 10V
18500pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM10TAM09FPG
Microsemi Corporation

MOSFET 6N-CH 100V 139A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 139A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
Paquete: SP6
En existencias6.400
Standard
100V
139A
10 mOhm @ 69.5A, 10V
4V @ 2.5mA
350nC @ 10V
9875pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTM50AM38SCTG
Microsemi Corporation

MOSFET 2N-CH 500V 90A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Paquete: SP4
En existencias4.576
Silicon Carbide (SiC)
500V
90A
45 mOhm @ 45A, 10V
5V @ 5mA
246nC @ 10V
11200pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTC80AM75SCG
Microsemi Corporation

MOSFET 2N-CH 800V 56A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 56A
  • Rds On (Max) @ Id, Vgs: 75 mOhm @ 28A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 364nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9015pF @ 25V
  • Power - Max: 568W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias3.952
Standard
800V
56A
75 mOhm @ 28A, 10V
3.9V @ 4mA
364nC @ 10V
9015pF @ 25V
568W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTC90H12SCTG
Microsemi Corporation

MOSFET 4N-CH 900V 30A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 26A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Paquete: SP4
En existencias6.016
Super Junction
900V
30A
120 mOhm @ 26A, 10V
3.5V @ 3mA
270nC @ 10V
6800pF @ 100V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM20DHM08G
Microsemi Corporation

MOSFET 2N-CH 200V 208A SP6

  • FET Type: 2 N-Channel (Dual) Asymmetrical
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 208A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 104A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 280nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 781W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
Paquete: SP6
En existencias3.376
Standard
200V
208A
10 mOhm @ 104A, 10V
5V @ 5mA
280nC @ 10V
14400pF @ 25V
781W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTC90HM60T3G
Microsemi Corporation

MOSFET 4N-CH 900V 59A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 59A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
Paquete: SP3
En existencias7.344
Super Junction
900V
59A
60 mOhm @ 52A, 10V
3.5V @ 6mA
540nC @ 10V
13600pF @ 100V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTC90AM60SCTG
Microsemi Corporation

MOSFET 2N-CH 900V 59A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 59A
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 52A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Paquete: SP4
En existencias7.648
Super Junction
900V
59A
60 mOhm @ 52A, 10V
3.5V @ 6mA
540nC @ 10V
13600pF @ 100V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM50HM75SCTG
Microsemi Corporation

MOSFET 4N-CH 500V 46A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Silicon Carbide (SiC)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 46A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5590pF @ 25V
  • Power - Max: 357W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Paquete: SP4
En existencias2.192
Silicon Carbide (SiC)
500V
46A
90 mOhm @ 23A, 10V
5V @ 2.5mA
123nC @ 10V
5590pF @ 25V
357W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM10TDUM09PG
Microsemi Corporation

MOSFET 6N-CH 100V 139A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 139A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 69.5A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
Paquete: SP6
En existencias2.752
Standard
100V
139A
10 mOhm @ 69.5A, 10V
4V @ 2.5mA
350nC @ 10V
9875pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTC60TAM35PG
Microsemi Corporation

MOSFET 6N-CH 600V 72A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 416W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
Paquete: SP6
En existencias6.176
Standard
600V
72A
35 mOhm @ 72A, 10V
3.9V @ 5.4mA
518nC @ 10V
14000pF @ 25V
416W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTM120A29FTG
Microsemi Corporation

MOSFET 2N-CH 1200V 34A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
Paquete: SP4
En existencias3.344
Standard
1200V (1.2kV)
34A
348 mOhm @ 17A, 10V
5V @ 5mA
374nC @ 10V
10300pF @ 25V
780W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4