Página 11 - Microchip Technology Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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Microchip Technology Productos - Transistores - FET, MOSFET - Simple

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Paquete
En existencias
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot DN2535N3-G
Microchip Technology

MOSFET N-CH 350V 0.12A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92 (TO-226)
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias13.284
MOSFET (Metal Oxide)
350V
120mA (Tj)
0V
-
-
300pF @ 25V
±20V
Depletion Mode
1W (Tc)
25 Ohm @ 120mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92 (TO-226)
TO-226-3, TO-92-3 (TO-226AA)
MIC94030YM4-TR
Microchip Technology

MOSFET P-CH 16V 1A SOT-143

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 16V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 12V
  • Vgs (Max): 16V
  • FET Feature: -
  • Power Dissipation (Max): 568mW (Ta)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-143
  • Package / Case: TO-253-4, TO-253AA
Paquete: TO-253-4, TO-253AA
En existencias22.032
MOSFET (Metal Oxide)
16V
1A (Ta)
2.7V, 10V
1.4V @ 250µA
-
100pF @ 12V
16V
-
568mW (Ta)
450 mOhm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-143
TO-253-4, TO-253AA
DN3135N8-G
Microchip Technology

MOSFET N-CH 350V 0.135A SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 135mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 35 Ohm @ 150mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
Paquete: TO-243AA
En existencias47.454
MOSFET (Metal Oxide)
350V
135mA (Tj)
0V
-
-
120pF @ 25V
±20V
Depletion Mode
1.3W (Ta)
35 Ohm @ 150mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
hot VP2206N2
Microchip Technology

MOSFET P-CH 60V 750MA 3TO-39

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 750mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360mW (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-39
  • Package / Case: TO-205AD, TO-39-3 Metal Can
Paquete: TO-205AD, TO-39-3 Metal Can
En existencias8.136
MOSFET (Metal Oxide)
60V
750mA (Tj)
5V, 10V
3.5V @ 10mA
-
450pF @ 25V
±20V
-
360mW (Tc)
900 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-39
TO-205AD, TO-39-3 Metal Can
hot VP2206N3-G
Microchip Technology

MOSFET P-CH 60V 640MA TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias15.036
MOSFET (Metal Oxide)
60V
640mA (Tj)
5V, 10V
3.5V @ 10mA
-
450pF @ 25V
±20V
-
740mW (Tc)
900 mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
DN3765K4-G
Microchip Technology

MOSFET N-CH 650V 300MA 3DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 300mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias16.170
MOSFET (Metal Oxide)
650V
300mA (Tj)
0V
-
-
825pF @ 25V
±20V
Depletion Mode
2.5W (Ta)
8 Ohm @ 150mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252-3
TO-252-3, DPak (2 Leads + Tab), SC-63
hot VP2450N3-G
Microchip Technology

MOSFET P-CH 500V 0.1A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 30 Ohm @ 100mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias7.296
MOSFET (Metal Oxide)
500V
100mA (Tj)
4.5V, 10V
3.5V @ 1mA
-
190pF @ 25V
±20V
-
740mW (Ta)
30 Ohm @ 100mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
VP0808L-G
Microchip Technology

MOSFET P-CH 80V 0.28A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias15.396
MOSFET (Metal Oxide)
80V
280mA (Tj)
10V
4.5V @ 1mA
-
150pF @ 25V
±30V
-
1W (Tc)
5 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VN2406L-G
Microchip Technology

MOSFET N-CH 240V 0.19A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias15.012
MOSFET (Metal Oxide)
240V
190mA (Tj)
2.5V, 10V
2V @ 1mA
-
125pF @ 25V
±20V
-
1W (Tc)
6 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot DN2540N5-G
Microchip Technology

MOSFET N-CH 400V 500MA 3TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 15W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias13.284
MOSFET (Metal Oxide)
400V
500mA (Tj)
0V
-
-
300pF @ 25V
±20V
Depletion Mode
15W (Tc)
25 Ohm @ 120mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot TN0620N3-G
Microchip Technology

MOSFET N-CH 200V 0.25A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias18.360
MOSFET (Metal Oxide)
200V
250mA (Tj)
5V, 10V
1.6V @ 1mA
-
150pF @ 25V
±20V
-
1W (Tc)
6 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VN0300L-G
Microchip Technology

MOSFET N-CH 30V 640MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 640mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias10.128
MOSFET (Metal Oxide)
30V
640mA (Tj)
5V, 10V
2.5V @ 1mA
-
190pF @ 20V
±30V
-
1W (Tc)
1.2 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TN0702N3-G
Microchip Technology

MOSFET N-CH 20V 530MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 530mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
  • Vgs(th) (Max) @ Id: 1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 500mA, 5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias15.666
MOSFET (Metal Oxide)
20V
530mA (Tj)
2V, 5V
1V @ 1mA
-
200pF @ 20V
±20V
-
1W (Tc)
1.3 Ohm @ 500mA, 5V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TN0604N3-G
Microchip Technology

MOSFET N-CH 40V 700MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias20.574
MOSFET (Metal Oxide)
40V
700mA (Tj)
5V, 10V
1.6V @ 1mA
-
190pF @ 20V
±20V
-
740mW (Ta)
750 mOhm @ 1.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot TN0610N3-G
Microchip Technology

MOSFET N-CH 100V 500MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias42.360
MOSFET (Metal Oxide)
100V
500mA (Tj)
3V, 10V
2V @ 1mA
-
150pF @ 25V
±20V
-
1W (Tc)
1.5 Ohm @ 750mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot TN0104N3-G
Microchip Technology

MOSFET N-CH 40V 0.45A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias5.840
MOSFET (Metal Oxide)
40V
450mA (Ta)
3V, 10V
1.6V @ 500µA
-
70pF @ 20V
±20V
-
1W (Tc)
1.8 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VN2410L-G
Microchip Technology

MOSFET N-CH 240V 0.19A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 240V
  • Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias6.000
MOSFET (Metal Oxide)
240V
190mA (Tj)
2.5V, 10V
2V @ 1mA
-
125pF @ 25V
±20V
-
1W (Tc)
10 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
TN0606N3-G
Microchip Technology

MOSFET N-CH 60V 500MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 500mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 750mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias13.488
MOSFET (Metal Oxide)
60V
500mA (Tj)
3V, 10V
2V @ 1mA
-
150pF @ 25V
±20V
-
1W (Tc)
1.5 Ohm @ 750mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VP0104N3-G
Microchip Technology

MOSFET P-CH 40V 0.25A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias3.536
MOSFET (Metal Oxide)
40V
250mA (Tj)
5V, 10V
3.5V @ 1mA
-
60pF @ 25V
±20V
-
1W (Tc)
8 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot DN2540N3-G
Microchip Technology

MOSFET N-CH 400V 0.12A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 120mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92 (TO-226)
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias7.888
MOSFET (Metal Oxide)
400V
120mA (Tj)
0V
-
-
300pF @ 25V
±20V
Depletion Mode
1W (Tc)
25 Ohm @ 120mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92 (TO-226)
TO-226-3, TO-92-3 (TO-226AA)
DN3545N3-G
Microchip Technology

MOSFET N-CH 450V 0.136A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 20 Ohm @ 150mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92 (TO-226)
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias12.624
MOSFET (Metal Oxide)
450V
200mA (Ta)
0V
-
-
360pF @ 25V
±20V
Depletion Mode
740mW (Ta)
20 Ohm @ 150mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92 (TO-226)
TO-226-3, TO-92-3 (TO-226AA)
hot VN0106N3-G
Microchip Technology

MOSFET N-CH 60V 350MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias19.632
MOSFET (Metal Oxide)
60V
350mA (Tj)
5V, 10V
2.4V @ 1mA
-
65pF @ 25V
±20V
-
1W (Tc)
3 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot DN2530N3-G
Microchip Technology

MOSFET N-CH 300V 0.175A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 12 Ohm @ 150mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92 (TO-226)
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias10.524
MOSFET (Metal Oxide)
300V
175mA (Tj)
0V
-
-
300pF @ 25V
±20V
Depletion Mode
740mW (Ta)
12 Ohm @ 150mA, 0V
-55°C ~ 150°C (TJ)
Through Hole
TO-92 (TO-226)
TO-226-3, TO-92-3 (TO-226AA)
hot TP2104N3-G
Microchip Technology

MOSFET P-CH 40V 0.175A TO92-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias15.216
MOSFET (Metal Oxide)
40V
175mA (Tj)
4.5V, 10V
2V @ 1mA
-
60pF @ 25V
±20V
-
740mW (Ta)
6 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot VN0104N3-G
Microchip Technology

MOSFET N-CH 40V 350MA TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 65pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias21.048
MOSFET (Metal Oxide)
40V
350mA (Tj)
5V, 10V
2.4V @ 1mA
-
65pF @ 25V
±20V
-
1W (Tc)
3 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot TN5325N3-G
Microchip Technology

MOSFET N-CH 250V 0.215A TO92-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 110pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 740mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7 Ohm @ 1A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Paquete: TO-226-3, TO-92-3 (TO-226AA)
En existencias7.980
MOSFET (Metal Oxide)
250V
215mA (Ta)
4.5V, 10V
2V @ 1mA
-
110pF @ 25V
±20V
-
740mW (Ta)
7 Ohm @ 1A, 10V
-
Through Hole
TO-92-3
TO-226-3, TO-92-3 (TO-226AA)
hot DN3535N8-G
Microchip Technology

MOSFET N-CH 350V 0.23A SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 350V
  • Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.6W (Ta)
  • Rds On (Max) @ Id, Vgs: 10 Ohm @ 150mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
Paquete: TO-243AA
En existencias11.892
MOSFET (Metal Oxide)
350V
230mA (Tj)
0V
-
-
360pF @ 25V
±20V
Depletion Mode
1.6W (Ta)
10 Ohm @ 150mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA
DN3145N8-G
Microchip Technology

MOSFET N-CH 450V 0.1A SOT89-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 450V
  • Current - Continuous Drain (Id) @ 25°C: 100mA (Tj)
  • Drive Voltage (Max Rds On, Min Rds On): 0V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 120pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Depletion Mode
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 60 Ohm @ 100mA, 0V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-243AA (SOT-89)
  • Package / Case: TO-243AA
Paquete: TO-243AA
En existencias33.348
MOSFET (Metal Oxide)
450V
100mA (Tj)
0V
-
-
120pF @ 25V
±20V
Depletion Mode
1.3W (Ta)
60 Ohm @ 100mA, 0V
-55°C ~ 150°C (TJ)
Surface Mount
TO-243AA (SOT-89)
TO-243AA