IXYS Productos

IXYA8N90C3D1

IXYS

IGBT 900V 20A 125W C3 TO-263AA

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): 48A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 8A
• Power - Max: 125W
• Switching Energy: 460µJ (on), 180µJ (off)
• Input Type: Standard
• Gate Charge: 13.3nC
• Td (on/off) @ 25°C: 16ns/40ns
• Test Condition: 450V, 8A, 30 Ohm, 15V
• Reverse Recovery Time (trr): 114ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

MWI200-06A8T

IXYS

IGBT SIXPACK 225A 600V E3PACK

• IGBT Type: NPT
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 225A
• Power - Max: 675W
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 200A
• Current - Collector Cutoff (Max): 1.8mA
• Input Capacitance (Cies) @ Vce: 9nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: E3
• Supplier Device Package: E3

Paquete: E3

MUBW75-12T8

IXYS

MODULE IGBT CBI E3

• IGBT Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 110A
• Power - Max: 355W
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
• Current - Collector Cutoff (Max): 4mA
• Input Capacitance (Cies) @ Vce: 5.35nF @ 25V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E3
• Supplier Device Package: E3

Paquete: E3

IXDN75N120

IXYS

IGBT 1200V 150A SOT-227B

• IGBT Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 150A
• Power - Max: 660W
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
• Current - Collector Cutoff (Max): 4mA
• Input Capacitance (Cies) @ Vce: 5.5nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Paquete: SOT-227-4, miniBLOC

IXTF280N055T

IXYS

MOSFET N-CH 55V 160A ISOPLUS I4

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS i4-PAC?
• Package / Case: i4-Pac?-5

Paquete: i4-Pac?-5

IXFN90N30

IXYS

MOSFET N-CH 300V 90A SOT-227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 90A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 360nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 560W (Tc)
• Rds On (Max) @ Id, Vgs: 33 mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

Paquete: SOT-227-4, miniBLOC

IXTH72N30T

IXYS

MOSFET N-CH 300V 72A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

Paquete: TO-247-3

IXZR16N60

IXYS

RF MOSFET N-CHANNEL PLUS247-3

• Transistor Type: N-Channel
• Frequency: -
• Gain: -
• Voltage - Test: -
• Current Rating: 1mA
• Noise Figure: -
• Current - Test: -
• Power - Output: 350W
• Voltage - Rated: 600V
• Package / Case: TO-247-3
• Supplier Device Package: PLUS247?-3

Paquete: TO-247-3

GWM220-004P3-SL

IXYS

MOSFET 6N-CH 40V 180A ISOPLUS

• FET Type: 6 N-Channel (3-Phase Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 180A
• Rds On (Max) @ Id, Vgs: -
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 94nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 17-SMD, Flat Leads
• Supplier Device Package: ISOPLUS-DIL?

Paquete: 17-SMD, Flat Leads

DSEE55-24N1F

IXYS

DIODE ARRAY GP 1200V 60A I4PAC

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 2.45V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 220ns
• Current - Reverse Leakage @ Vr: 1mA @ 1200V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-3
• Supplier Device Package: i4-PAC?

Paquete: i4-Pac?-3

GBO25-12NO1

IXYS

RECT BRIDGE 1PH 1200V SIP

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 25A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12.5A
• Current - Reverse Leakage @ Vr: 50µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBO
• Supplier Device Package: 4-SIP

Paquete: 4-SIP, GBO

FBO16-12N

IXYS

DIODE BRIDGE 1PHASE I4-PAC-5

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 22A
• Voltage - Forward (Vf) (Max) @ If: 1.43V @ 20A
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: i4-Pac?-5
• Supplier Device Package: ISOPLUS i4-PAC?

Paquete: i4-Pac?-5

VBE60-06A

IXYS

DIODE BRIDGE FAST DIODE SOT-227B

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 1.26V @ 30A
• Current - Reverse Leakage @ Vr: 150µA @ 600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Paquete: SOT-227-4, miniBLOC

IXDI430CI

IXYS

IC DRVR MOSF/IGBT 30A TO220-5

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 8.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3.5V
• Current - Peak Output (Source, Sink): 30A, 30A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 18ns, 16ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-5
• Supplier Device Package: TO-220-5

Paquete: TO-220-5

IXDD404SIA-16

IXYS

IC MOSFET DRVR DUAL 4A 16-SOIC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 4A, 4A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 16ns, 13ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.295", 7.50mm Width)

IXDF502PI

IXYS

IC MOSF DRIVER FAST DUAL 8-DIP

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 7.5ns, 6.5ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

Paquete: 8-DIP (0.300", 7.62mm)

IXDN404SI-16

IXYS

IC MOSFET DRVR LS 4A DUAL 16SOIC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 4A, 4A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 16ns, 13ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.295", 7.50mm Width)

IXBOD1-13RD

IXYS

IC DIODE MODULE BOD 0.2A 1300V

• Voltage - Clamping: 1300V (1.3kV)
• Technology: Mixed Technology
• Number of Circuits: 2
• Number of Circuits: 2
• Applications: High Voltage
• Mounting Type: PCB, Through Hole
• Package / Case: Radial
• Supplier Device Package: BOD

Paquete: Radial

IXTH20N65X2

IXYS

MOSFET N-CH 650V 20A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 290W (Tc)
• Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247 (IXTH)
• Package / Case: TO-247-3

Paquete: -

CLA30MT1200NPZ-TUB

IXYS

TRIAC 1.2KV 33A TO263HV

• Triac Type: Standard
• Voltage - Off State: 1.2 kV
• Current - On State (It (RMS)) (Max): 33 A
• Voltage - Gate Trigger (Vgt) (Max): 1.3 V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 170A, 185A
• Current - Gate Trigger (Igt) (Max): 40 mA
• Current - Hold (Ih) (Max): 50 mA
• Configuration: Single
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV

Paquete: -

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ITF38IF1200HJ

IXYS

DISC IGBT XPT-GENX4 TO-247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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MDMA210P1600YD

IXYS

DIODE MODULE GP 1600V 210A Y4-M6

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io) (per Diode): 210A
• Voltage - Forward (Vf) (Max) @ If: 1.13 V @ 210 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 mA @ 1600 V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Y4-M6
• Supplier Device Package: Y4-M6

Paquete: -

MDMA450UB1600P-PC

IXYS

MDMA450UB1600PTED-PC

• Diode Type: Three Phase (Braking)
• Technology: Standard
• Voltage - Peak Reverse (Max): 1.6 kV
• Current - Average Rectified (Io): 250 A
• Voltage - Forward (Vf) (Max) @ If: 1.81 V @ 450 A
• Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: E2
• Supplier Device Package: E2

Paquete: -

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IXFK140N60X3

IXYS

DISCRETE MOSFET 140A 600V X3 TO2

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

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N3165HA280

IXYS

SCR 2.8KV 6230A W79

• Voltage - Off State: 2.8 kV
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 1.3 V
• Current - On State (It (AV)) (Max): 3165 A
• Current - On State (It (RMS)) (Max): 6230 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 40000A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF
• Supplier Device Package: W79

Paquete: -

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IXTA10P50P-TRL

IXYS

MOSFET P-CH 500V 10A TO263

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263AA
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paquete: -

IXTA200N055T2-TRL

IXYS

MOSFET N-CH 55V 200A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55 V
• Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6970 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paquete: -

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IXFY30N25X3

IXYS

MOSFET N-CH 250V 30A TO252AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 176W (Tc)
• Rds On (Max) @ Id, Vgs: 60mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -