Página 195 - IXYS Productos | Heisener Electronics
Contáctenos
SalesDept@heisener.com +86-755-83210559-827
Iniciar sesión/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carro 0

IXYS Productos

Registros 5.468
Página  195/196
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
IXGT24N170A
IXYS

IGBT 1700V 24A 250W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 24A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
  • Power - Max: 250W
  • Switching Energy: 2.97mJ (on), 790µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 21ns/336ns
  • Test Condition: 850V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
En existencias4.016
IXA37IF1200HJ
IXYS

IGBT 1200V 58A 195W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 58A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
  • Power - Max: 195W
  • Switching Energy: 3.8mJ (on), 4.1mJ (off)
  • Input Type: Standard
  • Gate Charge: 106nC
  • Td (on/off) @ 25°C: -
  • Test Condition: 600V, 35A, 27 Ohm, 15V
  • Reverse Recovery Time (trr): 350ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
Paquete: ISOPLUS247?
En existencias7.856
IXGQ180N33TCD1
IXYS

IGBT 330V 180A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 180A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
Paquete: TO-3P-3, SC-65-3
En existencias5.952
IXXK160N65B4
IXYS

IGBT 650V 310A 940W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 310A
  • Current - Collector Pulsed (Icm): 860A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 160A
  • Power - Max: 940W
  • Switching Energy: 3.3mJ (on), 1.88mJ (off)
  • Input Type: Standard
  • Gate Charge: 425nC
  • Td (on/off) @ 25°C: 52ns/220ns
  • Test Condition: 400V, 80A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXXK)
Paquete: TO-264-3, TO-264AA
En existencias6.928
MIXA60WB1200TEH
IXYS

IGBT MODULE 1200V 60A

  • IGBT Type: PT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 85A
  • Power - Max: 290W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 55A
  • Current - Collector Cutoff (Max): 500µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E3
  • Supplier Device Package: E3
Paquete: E3
En existencias6.640
IXBN75N170
IXYS

IGBT BIMOSFET 1700V 145A SOT227B

  • IGBT Type: -
  • Configuration: Single
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 145A
  • Power - Max: 625W
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 75A
  • Current - Collector Cutoff (Max): 25µA
  • Input Capacitance (Cies) @ Vce: 6.93nF @ 25V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
Paquete: SOT-227-4, miniBLOC
En existencias5.760
MIXA10WB1200TED
IXYS

IGBT MODULE 1200V 12A HEX

  • IGBT Type: PT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 17A
  • Power - Max: 60W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 9A
  • Current - Collector Cutoff (Max): 700µA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
Paquete: E2
En existencias3.776
IXTC280N055T
IXYS

MOSFET N-CH 55V 145A ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 160W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
Paquete: ISOPLUS220?
En existencias5.632
IXFR90N20Q
IXYS

MOSFET N-CH 200V ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
Paquete: ISOPLUS247?
En existencias7.920
IXFR24N100
IXYS

MOSFET N-CH 1KV 22A ISOPLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 267nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 416W (Tc)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS247?
  • Package / Case: ISOPLUS247?
Paquete: ISOPLUS247?
En existencias5.088
IXTT24P20
IXYS

MOSFET P-CH 200V 24A TO-268

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 110 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
En existencias5.968
hot IXTQ150N06P
IXYS

MOSFET N-CH 60V 150A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 118nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 480W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paquete: TO-3P-3, SC-65-3
En existencias103.464
VMM90-09F
IXYS

MOSFET 2N-CH 900V 85A Y3-LI

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 85A
  • Rds On (Max) @ Id, Vgs: 76 mOhm @ 65A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 960nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y3-Li
  • Supplier Device Package: Y3-Li
Paquete: Y3-Li
En existencias3.792
MLO36-16IO1
IXYS

MODULE AC CTLR 1600V KAMM-MODUL

  • Structure: 1-Phase Controller - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 18A
  • Current - On State (It (RMS)) (Max): 28A
  • Voltage - Gate Trigger (Vgt) (Max): 1V
  • Current - Gate Trigger (Igt) (Max): 65mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 360A, 390A
  • Current - Hold (Ih) (Max): 100mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
Paquete: Module
En existencias6.800
VWO85-08IO1
IXYS

MODULE AC CTLR 3PH 800V V2-PACK

  • Structure: 3-Phase Controller - All SCRs
  • Number of SCRs, Diodes: 6 SCRs
  • Voltage - Off State: 800V
  • Current - On State (It (AV)) (Max): 27A
  • Current - On State (It (RMS)) (Max): 59A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5V
  • Current - Gate Trigger (Igt) (Max): 100mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 520A, 560A
  • Current - Hold (Ih) (Max): 200mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
Paquete: Module
En existencias3.616
DSB30C30PB
IXYS

DIODE ARRAY SCHOTTKY 30V TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 510mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias5.904
VUB160-12NO2
IXYS

RECT BRIDGE 3PH 1200V V2-PACK

  • Diode Type: Three Phase (Braking)
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 188A
  • Voltage - Forward (Vf) (Max) @ If: 2.7V @ 30A
  • Current - Reverse Leakage @ Vr: 300µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V2-PAK
  • Supplier Device Package: V2-PAK
Paquete: V2-PAK
En existencias5.920
VUO190-14NO7
IXYS

RECT BRIDGE 3PH 1400V PWS-E-1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1400V
  • Current - Average Rectified (Io): 248A
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 80A
  • Current - Reverse Leakage @ Vr: 200µA @ 1400V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: PWS-E1
  • Supplier Device Package: PWS-E1
Paquete: PWS-E1
En existencias2.080
VUE75-12NO7
IXYS

3 PHASE/FULL WAVE 74A BRDG RECT

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1200V
  • Current - Average Rectified (Io): 74A
  • Voltage - Forward (Vf) (Max) @ If: 2.71V @ 30A
  • Current - Reverse Leakage @ Vr: 250µA @ 1200V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
Paquete: ECO-PAC1
En existencias3.952
VUO86-08NO7
IXYS

RECT BRIDGE 3PH 800V ECO-PAC1

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 86A
  • Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
  • Current - Reverse Leakage @ Vr: 40µA @ 800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: ECO-PAC1
  • Supplier Device Package: ECO-PAC1
Paquete: ECO-PAC1
En existencias6.256
IXBOD1-25R
IXYS

IC DIODE MODULE BOD 0.9A 2500V

  • Voltage - Clamping: 2500V (2.5kV)
  • Technology: Mixed Technology
  • Number of Circuits: 3
  • Number of Circuits: 3
  • Applications: High Voltage
  • Mounting Type: PCB, Through Hole
  • Package / Case: Radial
  • Supplier Device Package: BOD
Paquete: Radial
En existencias7.380
IXBOD1-19R
IXYS

IC DIODE MODULE BOD 1.25A 1900V

  • Voltage - Clamping: 1900V (1.9kV)
  • Technology: Mixed Technology
  • Number of Circuits: 2
  • Number of Circuits: 2
  • Applications: High Voltage
  • Mounting Type: PCB, Through Hole
  • Package / Case: Radial
  • Supplier Device Package: BOD
Paquete: Radial
En existencias2.466
IXYP20N65C3
IXYS

DISC IGBT XPT-GENX3 TO-220AB/FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 105 A
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: 200 W
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: 30 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 135 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
IXYX25N250CV1
IXYS

IGBT 2500V 235A PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 2500 V
  • Current - Collector (Ic) (Max): 95 A
  • Current - Collector Pulsed (Icm): 235 A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
  • Power - Max: 937 W
  • Switching Energy: 8.3mJ (on), 7.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 147 nC
  • Td (on/off) @ 25°C: 15ns/230ns
  • Test Condition: 1250V, 25A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 220 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: PLUS247™-3
Paquete: -
Request a Quote
IXFP34N60X2A
IXYS

MOSFET N-CH TO220

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
MCC162-16IO1B
IXYS

BIPOLAR MODULE - THYRISTOR Y4-M

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1.6 kV
  • Current - On State (It (AV)) (Max): 181 A
  • Current - On State (It (RMS)) (Max): 300 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.5 V
  • Current - Gate Trigger (Igt) (Max): 150 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 6000A, 6480A
  • Current - Hold (Ih) (Max): 200 mA
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Y4-M6
Paquete: -
Request a Quote
IXFN170N65X2
IXYS

MOSFET N-CH 650V 170A SOT227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 434 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1170W (Tc)
  • Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
Paquete: -
En existencias60
IXFX400N15X3
IXYS

MOSFET N-CH 150V 400A PLUS247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 400A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 365 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 23700 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 200A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247™-3
  • Package / Case: TO-247-3 Variant
Paquete: -
Request a Quote