Página 87 - IXYS Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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IXYS Productos - Transistores - FET, MOSFET - Simple

Registros 2.558
Página  87/92
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Fabricantes
Descripción
Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IXFH160N15T
IXYS

MOSFET N-CH 150V 160A TO-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD (IXFH)
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias423.696
MOSFET (Metal Oxide)
150V
160A (Tc)
10V
5V @ 1mA
160nC @ 10V
8800pF @ 25V
±30V
-
830W (Tc)
9.6 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-247AD (IXFH)
TO-247-3
IXUC160N075
IXYS

MOSFET N-CH 75V 160A ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
Paquete: ISOPLUS220?
En existencias2.496
MOSFET (Metal Oxide)
75V
160A (Tc)
10V
4V @ 2mA
250nC @ 10V
-
±20V
-
300W (Tc)
6.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
IXTV110N25TS
IXYS

MOSFET N-CH 250V 110A PLUS220SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
Paquete: PLUS-220SMD
En existencias2.896
MOSFET (Metal Oxide)
250V
110A (Tc)
10V
4.5V @ 1mA
157nC @ 10V
9400pF @ 25V
±20V
-
694W (Tc)
24 mOhm @ 55A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXTV102N20T
IXYS

MOSFET N-CH 200V 102A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 750W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
Paquete: TO-220-3, Short Tab
En existencias2.080
MOSFET (Metal Oxide)
200V
102A (Tc)
10V
4.5V @ 1mA
114nC @ 10V
6800pF @ 25V
±30V
-
750W (Tc)
23 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
hot IXTC110N25T
IXYS

MOSFET N-CH 250V 50A ISOPLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 250V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 157nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 55A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISOPLUS220?
  • Package / Case: ISOPLUS220?
Paquete: ISOPLUS220?
En existencias5.984
MOSFET (Metal Oxide)
250V
50A (Tc)
10V
4.5V @ 1mA
157nC @ 10V
9400pF @ 25V
±20V
-
180W (Tc)
27 mOhm @ 55A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS220?
ISOPLUS220?
IXKP10N60C5M
IXYS

MOSFET N-CH 600V 5.4A TO220ABFP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 340µA
  • Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 385 mOhm @ 5.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220ABFP
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
Paquete: TO-220-3 Full Pack, Isolated Tab
En existencias2.752
MOSFET (Metal Oxide)
600V
5.4A (Tc)
10V
3.5V @ 340µA
22nC @ 10V
790pF @ 100V
±20V
Super Junction
-
385 mOhm @ 5.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220ABFP
TO-220-3 Full Pack, Isolated Tab
IXFV15N100PS
IXYS

MOSFET N-CH 1000V 15A PLUS220SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
Paquete: PLUS-220SMD
En existencias6.720
MOSFET (Metal Oxide)
1000V
15A (Tc)
10V
6.5V @ 1mA
97nC @ 10V
5140pF @ 25V
±30V
-
543W (Tc)
760 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXFV15N100P
IXYS

MOSFET N-CH 1000V 15A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 97nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5140pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 760 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
Paquete: TO-220-3, Short Tab
En existencias3.232
MOSFET (Metal Oxide)
1000V
15A (Tc)
10V
6.5V @ 1mA
97nC @ 10V
5140pF @ 25V
±30V
-
543W (Tc)
760 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXFV12N120PS
IXYS

MOSFET N-CH 1200V 12A PLUS220SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
Paquete: PLUS-220SMD
En existencias6.768
MOSFET (Metal Oxide)
1200V
12A (Tc)
10V
6.5V @ 1mA
103nC @ 10V
5400pF @ 25V
±30V
-
543W (Tc)
1.35 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXFV12N120P
IXYS

MOSFET N-CH 1200V 12A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 6.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.35 Ohm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
Paquete: TO-220-3, Short Tab
En existencias5.248
MOSFET (Metal Oxide)
1200V
12A (Tc)
10V
6.5V @ 1mA
103nC @ 10V
5400pF @ 25V
±30V
-
543W (Tc)
1.35 Ohm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXUN350N10
IXYS

MOSFET N-CH 100V 350A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 350A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 175A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias7.680
MOSFET (Metal Oxide)
100V
350A
10V
4V @ 3mA
640nC @ 10V
27000pF @ 25V
±20V
-
830W (Tc)
2.5 mOhm @ 175A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
VMO80-05P1
IXYS

MOSFET N-CH ECO-PAC2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ECO-PAC2
  • Package / Case: ECO-PAC2
Paquete: ECO-PAC2
En existencias2.176
MOSFET (Metal Oxide)
-
-
-
-
-
-
-
-
-
-
-
Chassis Mount
ECO-PAC2
ECO-PAC2
VMO40-05P1
IXYS

MOSFET N-CH ECO-PAC2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ECO-PAC2
  • Package / Case: ECO-PAC2
Paquete: ECO-PAC2
En existencias3.008
MOSFET (Metal Oxide)
-
-
-
-
-
-
-
-
-
-
-
Chassis Mount
ECO-PAC2
ECO-PAC2
VMO150-01P1
IXYS

MOSFET N-CH 100V 165A ECO-PAC2

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 165A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ECO-PAC2
  • Package / Case: ECO-PAC2
Paquete: ECO-PAC2
En existencias4.944
MOSFET (Metal Oxide)
100V
165A
10V
4V @ 8mA
400nC @ 10V
9400pF @ 25V
±20V
-
400W (Tc)
8 mOhm @ 90A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
ECO-PAC2
ECO-PAC2
IXUN280N10
IXYS

MOSFET N-CH 100V 280A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 280A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 440nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 18000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 770W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 140A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias5.168
MOSFET (Metal Oxide)
100V
280A
10V
4V @ 4mA
440nC @ 10V
18000pF @ 25V
±20V
-
770W (Tc)
5 mOhm @ 140A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227B
SOT-227-4, miniBLOC
hot IXTY64N055T
IXYS

MOSFET N-CH 55V 64A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 37nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 13 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias631.824
MOSFET (Metal Oxide)
55V
64A (Tc)
10V
4V @ 25µA
37nC @ 10V
1420pF @ 25V
±20V
-
130W (Tc)
13 mOhm @ 500mA, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY5N50P
IXYS

MOSFET N-CH 500V 4.8A TO-252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias4.928
MOSFET (Metal Oxide)
500V
4.8A (Tc)
10V
5.5V @ 50µA
12.6nC @ 10V
620pF @ 25V
±30V
-
89W (Tc)
1.4 Ohm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY55N075T
IXYS

MOSFET N-CH 75V 55A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 19.5 mOhm @ 27.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias5.344
MOSFET (Metal Oxide)
75V
55A (Tc)
10V
4V @ 25µA
33nC @ 10V
1400pF @ 25V
±20V
-
130W (Tc)
19.5 mOhm @ 27.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
IXTY50N085T
IXYS

MOSFET N-CH 85V 50A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 130W (Tc)
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias4.224
MOSFET (Metal Oxide)
85V
50A (Tc)
10V
4V @ 25µA
34nC @ 10V
1460pF @ 25V
±20V
-
130W (Tc)
23 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
IXTV280N055TS
IXYS

MOSFET N-CH 55V 280A PLUS220SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
Paquete: PLUS-220SMD
En existencias4.688
MOSFET (Metal Oxide)
55V
280A (Tc)
10V
4V @ 250µA
200nC @ 10V
9800pF @ 25V
±20V
-
550W (Tc)
3.2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXTV280N055T
IXYS

MOSFET N-CH 55V 280A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
Paquete: TO-220-3, Short Tab
En existencias5.312
MOSFET (Metal Oxide)
55V
280A (Tc)
10V
4V @ 250µA
200nC @ 10V
9800pF @ 25V
±20V
-
550W (Tc)
3.2 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXTV250N075TS
IXYS

MOSFET N-CH 75V 250A PLUS220SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
Paquete: PLUS-220SMD
En existencias5.248
MOSFET (Metal Oxide)
75V
250A (Tc)
10V
4V @ 250µA
200nC @ 10V
9900pF @ 25V
±20V
-
550W (Tc)
4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXTV250N075T
IXYS

MOSFET N-CH 75V 250A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
Paquete: TO-220-3, Short Tab
En existencias6.432
MOSFET (Metal Oxide)
75V
250A (Tc)
10V
4V @ 250µA
200nC @ 10V
9900pF @ 25V
±20V
-
550W (Tc)
4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXTV230N085TS
IXYS

MOSFET N-CH 85V 230A PLUS220SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
Paquete: PLUS-220SMD
En existencias7.536
MOSFET (Metal Oxide)
85V
230A (Tc)
10V
4V @ 250µA
187nC @ 10V
9900pF @ 25V
±20V
-
550W (Tc)
4.4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXTV230N085T
IXYS

MOSFET N-CH 85V 230A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 85V
  • Current - Continuous Drain (Id) @ 25°C: 230A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
Paquete: TO-220-3, Short Tab
En existencias4.112
MOSFET (Metal Oxide)
85V
230A (Tc)
10V
4V @ 250µA
187nC @ 10V
9900pF @ 25V
±20V
-
550W (Tc)
4.4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXTV200N10TS
IXYS

MOSFET N-CH 100V 200A PLUS220SMD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PLUS-220SMD
  • Package / Case: PLUS-220SMD
Paquete: PLUS-220SMD
En existencias3.776
MOSFET (Metal Oxide)
100V
200A (Tc)
10V
4.5V @ 250µA
152nC @ 10V
9400pF @ 25V
±30V
-
550W (Tc)
5.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PLUS-220SMD
PLUS-220SMD
IXTV200N10T
IXYS

MOSFET N-CH 100V 200A PLUS220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 550W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS220
  • Package / Case: TO-220-3, Short Tab
Paquete: TO-220-3, Short Tab
En existencias7.824
MOSFET (Metal Oxide)
100V
200A (Tc)
10V
4.5V @ 250µA
152nC @ 10V
9400pF @ 25V
±30V
-
550W (Tc)
5.5 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PLUS220
TO-220-3, Short Tab
IXTU44N10T
IXYS

MOSFET N-CH 100V 44A TO-251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4.5V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-251
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias4.176
MOSFET (Metal Oxide)
100V
44A (Tc)
-
4.5V @ 25µA
-
-
-
-
-
-
-
Through Hole
TO-251
TO-251-3 Short Leads, IPak, TO-251AA