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Infineon Technologies Productos

Registros 16.988
Página  67/607
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IRGS4715DTRRPBF
Infineon Technologies

IGBT 650V D2-PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 21A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 8A
  • Power - Max: 100W
  • Switching Energy: 200µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 30nC
  • Td (on/off) @ 25°C: 30ns/100ns
  • Test Condition: 400V, 8A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 86ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias5.696
IGW25N120H3
Infineon Technologies

IGBT 1200V 50A 326W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 50A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
  • Power - Max: 326W
  • Switching Energy: 2.65mJ
  • Input Type: Standard
  • Gate Charge: 115nC
  • Td (on/off) @ 25°C: 27ns/277ns
  • Test Condition: 600V, 25A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
Paquete: TO-247-3
En existencias55.902
hot IRF6619TRPBF
Infineon Technologies

MOSFET N-CH 20V 30A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 150A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5040pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 30A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
Paquete: DirectFET? Isometric MX
En existencias349.200
IRFR3711TRRPBF
Infineon Technologies

MOSFET N-CH 20V 100A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2980pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias7.648
IRFR9014N
Infineon Technologies

MOSFET P-CH 60V 5.1A DPAK

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 270pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 3.1A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias7.632
BSP324H6327XTSA1
Infineon Technologies

MOSFET N-CH 400V 170MA SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 94µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 154pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 Ohm @ 170mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
Paquete: TO-261-4, TO-261AA
En existencias6.096
hot BSZ035N03LSGATMA1
Infineon Technologies

MOSFET N-CH 30V 40A TSDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias59.964
hot IRLR8256TRPBF
Infineon Technologies

MOSFET N-CH 25V 81A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1470pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 63W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias8.652
hot IRF7103Q
Infineon Technologies

MOSFET 2N-CH 50V 3A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 3A
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 25V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias85.488
IR3847MTR1PBF
Infineon Technologies

IC REG BUCK ADJ 25A SYNC 33QFN

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 1.5V
  • Voltage - Input (Max): 21V
  • Voltage - Output (Min/Fixed): 0.6V
  • Voltage - Output (Max): 18.06V
  • Current - Output: 25A
  • Frequency - Switching: 300kHz ~ 1.5MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 29-PowerVQFN
  • Supplier Device Package: PQFN (5x6)
Paquete: 29-PowerVQFN
En existencias7.712
IR6220
Infineon Technologies

IC DRIVER HIGH SIDE TO-220-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 5 V ~ 35 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 10A
  • Rds On (Typ): 80 mOhm
  • Input Type: Non-Inverting
  • Features: Status Flag
  • Fault Protection: Current Limiting (Fixed), Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-220-5
  • Supplier Device Package: TO-220AB (5-LEAD)
Paquete: TO-220-5
En existencias3.632
AUIPS6011STRL
Infineon Technologies

IC SW IPS 1CH HIGH SIDE D2PAK-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 36V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 6.3A
  • Rds On (Typ): 11 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: D2PAK
Paquete: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
En existencias5.872
IR2152STR
Infineon Technologies

IC DRVR HALF BRDG SELF-OSC 8SOIC

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 125mA, 250mA
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 40ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias4.752
XC2263N40F40LAAKXUMA1
Infineon Technologies

IC MCU 16BIT 320KB FLASH 100LQFP

  • Core Processor: C166SV2
  • Core Size: 16/32-Bit
  • Speed: 40MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 76
  • Program Memory Size: 320KB (320K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 42K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 16x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-100-8
Paquete: 100-LQFP Exposed Pad
En existencias3.264
hot IR3082AMPBF
Infineon Technologies

IC XPHASE CONTROL 9.6V 20-MLPQ

  • Applications: Processor
  • Current - Supply: 12mA
  • Voltage - Supply: 8.05 V ~ 16 V
  • Operating Temperature: 0°C ~ 100°C
  • Mounting Type: Surface Mount
  • Package / Case: 20-VQFN Exposed Pad
  • Supplier Device Package: 20-MLPQ (5x5)
Paquete: 20-VQFN Exposed Pad
En existencias31.200
PEB20324HV2-2-M128X
Infineon Technologies

NETWORK INTERFACE CONTROLLER

  • Function: -
  • Interface: -
  • Number of Circuits: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
BTT3050EJXUMA1
Infineon Technologies

50 M SINGLE CHANNEL SMART LOW-SI

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 6V ~ 36V
  • Voltage - Supply (Vcc/Vdd): 3.3V ~ 5.5V
  • Current - Output (Max): 4A
  • Rds On (Typ): 50mOhm
  • Input Type: Non-Inverting
  • Features: Slew Rate Controlled
  • Fault Protection: Current Limiting (Fixed), Over Load, Over Temperature, Over Voltage, Short Circuit
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
  • Supplier Device Package: PG-TDSO-8-31
Paquete: -
En existencias11.439
SIDC30D60E6X1SA1
Infineon Technologies

DIODE GP 600V 75A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 75A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 75 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Sawn on foil
  • Operating Temperature - Junction: -55°C ~ 150°C
Paquete: -
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CYPD3184A1-24LQXQT
Infineon Technologies

IC OFFLINE SWITCH FLYBACK 24QFN

  • Output Isolation: Isolated
  • Internal Switch(s): No
  • Voltage - Breakdown: -
  • Topology: Flyback
  • Voltage - Start Up: -
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Duty Cycle: -
  • Frequency - Switching: 20kHz ~ 150kHz
  • Power (Watts): -
  • Fault Protection: -
  • Control Features: -
  • Operating Temperature: -40°C ~ 85°C
  • Package / Case: 24-UFQFN Exposed Pad
  • Supplier Device Package: 24-QFN (4x4)
  • Mounting Type: Surface Mount
Paquete: -
En existencias7.425
TT400N26KOFHPSA1
Infineon Technologies

SCR MODULE 2.6KV 800A MODULE

  • Structure: Series Connection - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 2.6 kV
  • Current - On State (It (AV)) (Max): 510 A
  • Current - On State (It (RMS)) (Max): 800 A
  • Voltage - Gate Trigger (Vgt) (Max): 2.2 V
  • Current - Gate Trigger (Igt) (Max): 250 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 13000A @ 50Hz
  • Current - Hold (Ih) (Max): 300 mA
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
Paquete: -
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CY9AF156NABGL-GK9E1
Infineon Technologies

IC MCU 32BIT 544KB FLASH 112BGA

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit Single-Core
  • Speed: 40MHz
  • Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
  • Peripherals: DMA, LVD, POR, PWM, WDT
  • Number of I/O: 83
  • Program Memory Size: 544KB (544K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 64K x 8
  • Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
  • Data Converters: A/D 24x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 112-LFBGA
  • Supplier Device Package: 112-PFBGA (10x10)
Paquete: -
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S29AS016J70BFI040A
Infineon Technologies

IC MEMORY FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
DD180N18SHPSA1
Infineon Technologies

DIODE MOD GP 1800V 226A BGPB34SB

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800 V
  • Current - Average Rectified (Io) (per Diode): 226A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 mA @ 1800 V
  • Operating Temperature - Junction: -40°C ~ 135°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: BG-PB34SB-1
Paquete: -
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IS26KL256S-DABLA300-TR
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
FZ1500R33HE3C1BPSA1
Infineon Technologies

IHV IHM T XHP 3 3-6 5K AG-IHVB19

  • IGBT Type: Trench Field Stop
  • Configuration: Single Switch
  • Voltage - Collector Emitter Breakdown (Max): 3300 V
  • Current - Collector (Ic) (Max): 1500 A
  • Power - Max: 2400000 W
  • Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1.5kA
  • Current - Collector Cutoff (Max): 5 mA
  • Input Capacitance (Cies) @ Vce: 280 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: No
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-IHVB190
Paquete: -
Request a Quote
IGC03T60TEX7SA2
Infineon Technologies

IGBT 600V 3A WAFER

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
PBM39701-1TQB
Infineon Technologies

INFINEON PBM39701/1TQ - TQF80-5

  • Function: -
  • Interface: -
  • Number of Circuits: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Power (Watts): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
PEF55008EV1-3-G
Infineon Technologies

PEF55008 - GEMINAX D8 MAX IS A 8

  • Type: -
  • Applications: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote