Infineon Technologies Productos

IRG4PC50WPBF

Infineon Technologies

IGBT 600V 55A 200W TO247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 55A
• Current - Collector Pulsed (Icm): 220A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 27A
• Power - Max: 200W
• Switching Energy: 80µJ (on), 320µJ (off)
• Input Type: Standard
• Gate Charge: 180nC
• Td (on/off) @ 25°C: 46ns/120ns
• Test Condition: 480V, 27A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

Paquete: TO-247-3

SPI80N03S2L-06

Infineon Technologies

MOSFET N-CH 30V 80A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2530pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IRLR8503TRL

Infineon Technologies

MOSFET N-CH 30V 44A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 62W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IPC60R380E6X1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

BFR 340T E6327

Infineon Technologies

TRANSISTOR RF NPN 6V SC-75

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (dB Typ @ f): 1.15dB @ 1.8GHz
• Gain: 15dB
• Power - Max: 60mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 3V
• Current - Collector (Ic) (Max): 10mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: PG-SC-75

Paquete: SC-75, SOT-416

BFP460H6327XTSA1

Infineon Technologies

TRANS RF NPN 4.5V 70MA SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 5.8V
• Frequency - Transition: 22GHz
• Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
• Gain: 12.5dB ~ 26.5dB
• Power - Max: 230mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
• Current - Collector (Ic) (Max): 70mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

Paquete: SC-82A, SOT-343

BA895H6327XTSA1

Infineon Technologies

DIODE RF SW 50V 50MA SCD80

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
• Resistance @ If, F: 7 Ohm @ 10mA, 100MHz
• Power Dissipation (Max): -
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-80
• Supplier Device Package: PG-SCD80-2

Paquete: SC-80

BAT 54-02V E6327

Infineon Technologies

DIODE SCHOTTKY 30V 200MA SC79-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 2µA @ 25V
• Capacitance @ Vr, F: 10pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: PG-SC79-2
• Operating Temperature - Junction: 150°C (Max)

Paquete: SC-79, SOD-523

IRU1010-18CSTR

Infineon Technologies

IC REG LINEAR 1.8V 1A 8SOIC

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 7V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.3V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

AUIPS2052G

Infineon Technologies

IC SW IPS 2CH LOW SIDE 8SOIC

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 60V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 900mA
• Rds On (Typ): 250 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

TLE8201RAUMA1

Infineon Technologies

IC MOTOR DRIVER SPI 36DSO

• Motor Type - Stepper: -
• Motor Type - AC, DC: Brushed DC
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (6), High Side (5)
• Interface: SPI
• Technology: DMOS
• Step Resolution: -
• Applications: Automotive
• Current - Output: -
• Voltage - Supply: 4.75 V ~ 5.5 V
• Voltage - Load: 5 V ~ 40 V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad
• Supplier Device Package: PG-DSO-36

Paquete: 36-BSSOP (0.433", 11.00mm Width) Exposed Pad

IR25601SPBF

Infineon Technologies

IC HALF BRIDGE DRIVER 8SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.3V
• Current - Peak Output (Source, Sink): 60mA, 130mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 200ns, 100ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

PEF3452H-V13

Infineon Technologies

IC INTERACE LINE 3.3V 44-MQFP

• Function: Line Interface Unit (LIU)
• Interface: DS3, E3, STS-1
• Number of Circuits: 1
• Voltage - Supply: 3.13 V ~ 3.46 V
• Current - Supply: 155mA
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 44-QFP
• Supplier Device Package: P-MQFP-44

Paquete: 44-QFP

XMC1403Q040X0200AAXUMA1

Infineon Technologies

IC MCU 32BIT 200KB FLASH 40VQFN

• Core Processor: ARM? Cortex?-M0
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: CAN, I2C, LIN, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, I2S, POR, PWM, WDT
• Number of I/O: 27
• Program Memory Size: 200KB (200K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 12x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: -
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-40-17

Paquete: 40-VFQFN Exposed Pad

XC822MT0FRAAAKXUMA1

Infineon Technologies

IC MCU 8BIT 2KB FLASH 16TSSOP

• Core Processor: XC800
• Core Size: 8-Bit
• Speed: 24MHz
• Connectivity: I2C, SSC, UART/USART
• Peripherals: Brown-out Detect/Reset, LED, POR, PWM, WDT
• Number of I/O: 13
• Program Memory Size: 2KB (2K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 512 x 8
• Voltage - Supply (Vcc/Vdd): 2.5 V ~ 5.5 V
• Data Converters: A/D 4x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

FS300R17KE4BOSA1

Infineon Technologies

IGBT MOD 1700V 375A 1800W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1700 V
• Current - Collector (Ic) (Max): 375 A
• Power - Max: 1800 W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
• Current - Collector Cutoff (Max): 3 mA
• Input Capacitance (Cies) @ Vce: 24.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: -

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CY22801SXC-030

Infineon Technologies

IC CLOCK GENERATOR 8SOIC

• Type: Clock Generator
• PLL: Yes
• Input: CMOS, Crystal
• Output: LVCMOS
• Number of Circuits: 1
• Ratio - Input:Output: 1:3
• Differential - Input:Output: No/No
• Frequency - Max: 200MHz
• Divider/Multiplier: Yes/No
• Voltage - Supply: 3.14V ~ 3.47V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: -

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S6J336AJTBSE20000

Infineon Technologies

TRAVEO-40NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 132MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART
• Peripherals: DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 126
• Program Memory Size: 112KB (112K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 48x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 176-TEQFP (24x24)

Paquete: -

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F3L75R07W2E3B11BOMA1

Infineon Technologies

IGBT MODULE 650V 95A 250W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 95 A
• Power - Max: 250 W
• Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 4.6 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: -

IPT60R035CFD7XTMA1

Infineon Technologies

MOSFET N-CH 600V 67A 8HSOF

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.25mA
• Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4354 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 351W (Tc)
• Rds On (Max) @ Id, Vgs: 35mOhm @ 24.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8-1
• Package / Case: 8-PowerSFN

Paquete: -

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CYT3BB8CEBQ1AESGS

Infineon Technologies

IC MCU 32BIT 4MB FLASH 176LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 250MHz
• Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 148
• Program Memory Size: 4.0625MB (4.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256K x 8
• RAM Size: 768K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 64x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 176-LQFP Exposed Pad
• Supplier Device Package: 176-TEQFP (24x24)

Paquete: -

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IKZA75N65SS5XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-4

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 75A
• Power - Max: 395 W
• Switching Energy: 240µJ (on), 750µJ (off)
• Input Type: Standard
• Gate Charge: 164 nC
• Td (on/off) @ 25°C: 22ns/145ns
• Test Condition: 400V, 75A, 5.6Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-4
• Supplier Device Package: PG-TO247-4-3

Paquete: -

CY15B104QN-20LPXCT

Infineon Technologies

IC FRAM 4MBIT SPI 20MHZ 8GQFN

• Memory Type: Non-Volatile
• Memory Format: FRAM
• Technology: FRAM (Ferroelectric RAM)
• Memory Size: 4Mbit
• Memory Interface: SPI
• Clock Frequency: 20 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20 ns
• Voltage - Supply: 1.8V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-UQFN
• Supplier Device Package: 8-GQFN (3.23x3.28)

Paquete: -

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IPP65R190CFD7XKSA1

Infineon Technologies

HIGH POWER_NEW

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 700µA
• Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 151W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 7.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

Paquete: -

FP40R12KE3BOSA1

Infineon Technologies

IGBT MOD 1200V 55A 210W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 55 A
• Power - Max: 210 W
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 2.5 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: -

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CY90F488BPMC-G-UNE1

Infineon Technologies

IC MCU 16BIT 256KB FLASH 100LQFP

• Core Processor: F²MC-16LX
• Core Size: 16-Bit
• Speed: 25MHz
• Connectivity: I2C, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 84
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 10K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 8x8/10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

Paquete: -

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CYT2B65CADQ0AZEGS

Infineon Technologies

IC MCU 32BIT 576KB FLASH 100LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 80MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 78
• Program Memory Size: 576KB (576K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 64K x 8
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 32x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

Paquete: -

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2EDL8033G4CXTMA1

Infineon Technologies

INT. POWERSTAGE/DRIVER

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 8V ~ 17V
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): 3A, 6A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 120 V
• Rise / Fall Time (Typ): 4.6ns, 3.3ns
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 10-VDFN Exposed Pad
• Supplier Device Package: PG-VDSON-10-2

Paquete: -