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Infineon Technologies Productos

Registros 16.988
Página  6/607
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IRGP4263D1PBF
Infineon Technologies

IGBT 600V TO247 COPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 192A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
  • Power - Max: 325W
  • Switching Energy: 2.9mJ (on), 1.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 145nC
  • Td (on/off) @ 25°C: 70ns/140ns
  • Test Condition: 400V, 48A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 170ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
Paquete: TO-247-3
En existencias5.456
hot IRF6636
Infineon Technologies

MOSFET N-CH 20V 18A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? ST
  • Package / Case: DirectFET? Isometric ST
Paquete: DirectFET? Isometric ST
En existencias78.996
AUIRLU2905
Infineon Technologies

MOSFET N-CH 55V 42A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 48nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 27 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias2.512
IPD320N20N3GBTMA1
Infineon Technologies

MOSFET N-CH 200V 34A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 32 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias5.664
IPD60R800CEATMA1
Infineon Technologies

MOSFET N-CH 600V TO-252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.2nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 373pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 2A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias6.352
hot IRFS59N10DPBF
Infineon Technologies

MOSFET N-CH 100V 59A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 114nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2450pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 35.4A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias65.616
PTFA081501E1V4XWSA1
Infineon Technologies

IC RF FET LDMOS H-36248-2

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias3.696
hot IRF7328PBF
Infineon Technologies

MOSFET 2P-CH 30V 8A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias15.120
hot BSO303P H
Infineon Technologies

MOSFET 2P-CH 30V 7A 8DSO

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.2A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2678pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias144.060
BAS21UE6359HTMA1
Infineon Technologies

DIODE GP 200V 125MA SC74

  • Diode Configuration: 3 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io) (per Diode): 125mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 100nA @ 200V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: PG-SC74-6
Paquete: SC-74, SOT-457
En existencias6.272
IDW30C65D1XKSA1
Infineon Technologies

DIODE 650V 30A RAPID1 TO247-3

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io) (per Diode): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 71ns
  • Current - Reverse Leakage @ Vr: 40µA @ 650V
  • Operating Temperature - Junction: -40°C ~ 175°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
Paquete: TO-247-3
En existencias9.600
hot IR2155PBF
Infineon Technologies

IC DRIVER HALF BRIDGE OSC 8DIP

  • Driven Configuration: Half-Bridge
  • Channel Type: Synchronous
  • Number of Drivers: 2
  • Gate Type: IGBT, N-Channel MOSFET
  • Voltage - Supply: 10 V ~ 20 V
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): 250mA, 500mA
  • Input Type: RC Input Circuit
  • High Side Voltage - Max (Bootstrap): 600V
  • Rise / Fall Time (Typ): 80ns, 45ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
Paquete: 8-DIP (0.300", 7.62mm)
En existencias10.068
1EDI2015ASXUMA1
Infineon Technologies

IC GATE DRIVER HVIC DSO36

  • Driven Configuration: -
  • Channel Type: -
  • Number of Drivers: -
  • Gate Type: -
  • Voltage - Supply: -
  • Logic Voltage - VIL, VIH: -
  • Current - Peak Output (Source, Sink): -
  • Input Type: -
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias6.512
ICE3A0365FKLA1
Infineon Technologies

IC OFFLINE CTRLR SMPS CM 8DIP

  • Output Isolation: Isolated
  • Internal Switch(s): Yes
  • Voltage - Breakdown: 650V
  • Topology: Flyback
  • Voltage - Start Up: 15V
  • Voltage - Supply (Vcc/Vdd): 8.5 V ~ 21 V
  • Duty Cycle: 72%
  • Frequency - Switching: 100kHz
  • Power (Watts): 22W
  • Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
  • Control Features: Soft Start
  • Operating Temperature: -25°C ~ 130°C (TJ)
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: PG-DIP-8
  • Mounting Type: Through Hole
Paquete: 8-DIP (0.300", 7.62mm)
En existencias7.264
XC2269I136F128LAAKXUMA1
Infineon Technologies

IC MCU 32BIT 1MB FLASH 100LQFP

  • Core Processor: C166SV2
  • Core Size: 16/32-Bit
  • Speed: 128MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: DMA, I2S, POR, PWM, WDT
  • Number of I/O: 76
  • Program Memory Size: 1MB (1M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 90K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 16x12b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias2.352
TC224S16F133FABKXUMA1
Infineon Technologies

IC MCU 32BIT 1MB FLASH 144TQFP

  • Core Processor: TriCore?
  • Core Size: 32-Bit
  • Speed: 133MHz
  • Connectivity: CAN, FlexRay, LIN, QSPI
  • Peripherals: DMA, WDT
  • Number of I/O: 120
  • Program Memory Size: 1MB (1M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 128K x 8
  • RAM Size: 96K x 8
  • Voltage - Supply (Vcc/Vdd): 3.3V
  • Data Converters: A/D 24x12b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias4.416
BGS12PL6E6327XTSA1
Infineon Technologies

IC SWITCH RF SPDT TSLP6-4

  • Frequency - Lower: 100MHz
  • Frequency - Upper: 4GHz
  • Isolation @ Frequency: 22dB @ 3.8GHz (typ)
  • Insertion Loss @ Frequency: 0.77dB @ 3.8GHz
  • IIP3: -
  • Topology: Reflective
  • Circuit: SPDT
  • P1dB: -
  • Features: Single Line Control
  • Impedance: 50 Ohm
  • Operating Temperature: -30°C ~ 85°C
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • RF Type: GSM, LTE, W-CDMA
  • Package / Case: 6-XFDFN
  • Supplier Device Package: TSLP-6-4
Paquete: 6-XFDFN
En existencias335.886
BGM681L11E6327XT
Infineon Technologies

IC GPS FRONT-END 3.6V TSLP11-1

  • RF Type: GPS
  • Frequency: 1575MHz
  • Features: -
  • Package / Case: 10-UFDFN Exposed Pad
  • Supplier Device Package: TSLP-11
Paquete: 10-UFDFN Exposed Pad
En existencias36.414
FP150R07N3E4B16BOSA1
Infineon Technologies

LOW POWER ECONO AG-ECONO3-3

  • IGBT Type: -
  • Configuration: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Power - Max: -
  • Vce(on) (Max) @ Vge, Ic: -
  • Current - Collector Cutoff (Max): -
  • Input Capacitance (Cies) @ Vce: -
  • Input: -
  • NTC Thermistor: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
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CY8C4725FNI-S402T
Infineon Technologies

IC MCU 32BIT 32KB FLASH 25WLCSP

  • Core Processor: ARM® Cortex®-M0+
  • Core Size: 32-Bit Single-Core
  • Speed: 24MHz
  • Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
  • Peripherals: Brown-out Detect/Reset, LCD, LVD, POR, PWM, WDT
  • Number of I/O: 21
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
  • Data Converters: A/D 16x10b; D/A 2x7b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 25-XFBGA, WLCSP
  • Supplier Device Package: 25-WLCSP (2.02x1.93)
Paquete: -
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CYT2BL8CAAQ0AZEGS
Infineon Technologies

IC MCU 32BT 4.063MB FLSH 176LQFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 160MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
  • Number of I/O: 152
  • Program Memory Size: 4.063MB (4.063M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 128K x 8
  • RAM Size: 512K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 82x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 176-LQFP
  • Supplier Device Package: 176-LQFP (24x24)
Paquete: -
En existencias1.125
IRF9956TRPBFXTMA1
Infineon Technologies

MOSFET 2N-CH 30V 3.5A 8DSO-902

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 190pF @ 15V
  • Power - Max: 2W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: PG-DSO-8-902
Paquete: -
Request a Quote
IPDQ65R029CFD7AXTMA1
Infineon Technologies

AUTOMOTIVE_COOLMOS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
  • Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 463W (Tc)
  • Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-HDSOP-22-1
  • Package / Case: 22-PowerBSOP Module
Paquete: -
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IPL65R210CFDAUMA2
Infineon Technologies

MOSFET N-CH 650V 16.6A 4VSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 16.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 700µA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 100 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 151W (Tc)
  • Rds On (Max) @ Id, Vgs: 210mOhm @ 7.3A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-VSON-4
  • Package / Case: 4-PowerTSFN
Paquete: -
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XMC7200-F176K8384AA
Infineon Technologies

INDUSTRIAL MCUS

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 350MHz
  • Connectivity: CANbus, Ethernet, FIFO, I2C, IrDA, MMC/SD/SDIO, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, Temp Sensor, TRNG, WDT
  • Number of I/O: 148
  • Program Memory Size: 8.188MB (8.188M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 256K x 8
  • RAM Size: 1M x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 81x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 176-LQFP Exposed Pad
  • Supplier Device Package: 176-TEQFP (24x24)
Paquete: -
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FS03MR12A6MA1LB
Infineon Technologies

SIC 6N-CH 1200V AG-HYBRIDD

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 400A
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 400A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 240mA
  • Gate Charge (Qg) (Max) @ Vgs: 1320nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 42600pF @ 600V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-HYBRIDD-2
Paquete: -
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CYAT81682-100AA71Z
Infineon Technologies

PSOC BASED - TRUETOUCH

  • Touchscreen: 2 Wire Capacitive
  • Resolution (Bits): -
  • Interface: I2C, SPI
  • Voltage Reference: -
  • Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
  • Current - Supply: -
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
Paquete: -
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CG6897DS
Infineon Technologies

SEMICONDUCTOR OTHER

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote