Infineon Technologies Productos

IRG4RC10KTR

Infineon Technologies

IGBT 600V 9A 38W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 9A
• Current - Collector Pulsed (Icm): 18A
• Vce(on) (Max) @ Vge, Ic: 2.62V @ 15V, 5A
• Power - Max: 38W
• Switching Energy: 160µJ (on), 100µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 11ns/51ns
• Test Condition: 480V, 5A, 100 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

BSS306NL6327HTSA1

Infineon Technologies

MOSFET N-CH 30V 2.3A SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 11µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 57 mOhm @ 2.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

SI4435DYTR

Infineon Technologies

MOSFET P-CH 30V 8A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

IPD80R360P7ATMA1

Infineon Technologies

MOSFET N-CH 800V COOLMOS TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 280µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 84W (Tc)
• Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

PTFA212401F V4

Infineon Technologies

IC FET RF LDMOS 240W H-37260-2

• Transistor Type: LDMOS
• Frequency: 2.14GHz
• Gain: 15.8dB
• Voltage - Test: 30V
• Current Rating: 10µA
• Noise Figure: -
• Current - Test: 1.6A
• Power - Output: 50W
• Voltage - Rated: 65V
• Package / Case: 2-Flatpack, Fin Leads, Flanged
• Supplier Device Package: H-37260-2

Paquete: 2-Flatpack, Fin Leads, Flanged

IRF7328TRPBF

Infineon Technologies

MOSFET 2P-CH 30V 8A 8-SOIC

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 8A
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2675pF @ 25V
• Power - Max: 2W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

BC 808-25W H6327

Infineon Technologies

TRANS PNP 25V 0.5A SOT323

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

Paquete: SC-70, SOT-323

BFY193PZZZA1

Infineon Technologies

TRANS RF NPN 12V 80MA MICRO-X1

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 7.5GHz
• Noise Figure (dB Typ @ f): 2.3dB ~ 2.9dB @ 2GHz
• Gain: 12.5dB ~ 13.5dB
• Power - Max: 580mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 30mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: MICRO-X1
• Supplier Device Package: MICRO-X1

Paquete: MICRO-X1

IFX30081SJVXUMA1

Infineon Technologies

IC REG LINEAR POS ADJ 50MA 8DSO

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 42V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): 41.7V
• Voltage Dropout (Max): 0.3V @ 50mA
• Current - Output: 50mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1µA ~ 11µA
• PSRR: 60dB (100Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

Paquete: 8-SOIC (0.154", 3.90mm Width)

1ED020I12BTXUMA1

Infineon Technologies

IC IGBT DVR 1200V 2A DSO16

• Driven Configuration: High-Side or Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT
• Voltage - Supply: 4.5 V ~ 5.5 V
• Logic Voltage - VIL, VIH: 1.5V, 3.5V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): 1200V
• Rise / Fall Time (Typ): 30ns, 20ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-16-15

Paquete: 16-SOIC (0.295", 7.50mm Width)

SAK-XE167GM-72F80L AA

Infineon Technologies

IC MCU 16BIT 576KB FLASH 144LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 80MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 119
• Program Memory Size: 576KB (576K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 50K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: 144-LQFP (20x20)

Paquete: 144-LQFP Exposed Pad

XMC4104Q48K128BAXUMA1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 48VQFN

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 80MHz
• Connectivity: CAN, I2C, LIN, SPI, UART/USART, USB
• Peripherals: DMA, I2S, LED, POR, PWM, WDT
• Number of I/O: 21
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 20K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 9x12b; D/A 2x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-53

Paquete: 48-VFQFN Exposed Pad

TLE5009E1000FUMA1

Infineon Technologies

IC MAGNETIC ANGLE SENSOR 8DSO

• For Measuring: Angle
• Technology: Magnetoresistive
• Rotation Angle - Electrical, Mechanical: 0° ~ 360°, Continuous
• Linear Range: -
• Output: Analog Voltage
• Output Signal: -
• Actuator Type: External Magnet Not Included
• Linearity: -
• Resistance: -
• Resistance Tolerance: -
• Voltage - Supply: 3 V ~ 3.6 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Operating Temperature: -40°C ~ 150°C

Paquete: -

BGA6L1BN6E6327XTSA1

Infineon Technologies

IC AMP MMIC TSNP-6

• Frequency: -
• P1dB: -
• Gain: -
• Noise Figure: -
• RF Type: -
• Voltage - Supply: -
• Current - Supply: -
• Test Frequency: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

PSB21150FV1-3

Infineon Technologies

IPAC-X ISDN PC ADAPTER CIRCUIT

• Function: ISDN
• Interface: IOM-2
• Number of Circuits: 1
• Voltage - Supply: 3.135V ~ 3.465V
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: PG-TQFP-64-1

Paquete: -

Request a Quote

CY9AFB41NAPQC-G-JNE2

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
• Peripherals: DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 24x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-BQFP
• Supplier Device Package: 100-QFP (14x20)

Paquete: -

Request a Quote

ND89N12KXPSA1

Infineon Technologies

THYR / DIODE MODULE DK

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 89A
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 300 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 20 mA @ 1.2 kV
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: -
• Operating Temperature - Junction: 150°C

Paquete: -

Request a Quote

BSC105N15LS5ATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 76A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 91µA
• Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 10.5mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

Paquete: -

AUIRFSL4010-313TRL

Infineon Technologies

MOSFET N-CH 100V 180A TO262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262-3
• Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA

Paquete: -

Request a Quote

IPB136N08N3GATMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 33µA
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 13.9mOhm @ 45A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paquete: -

Request a Quote

BSC016N06NSSCATMA1

Infineon Technologies

TRENCH 40<-<100V PG-WSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 234A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.3V @ 95µA
• Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 167W (Tc)
• Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

Paquete: -

Request a Quote

SIDC06D60E6X1SA3

Infineon Technologies

DIODE GP 600V 10A WAFER

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Sawn on foil
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

Request a Quote

IQE030N06NM5SCATMA1

Infineon Technologies

OPTIMOS LOWVOLTAGE POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 132A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.3V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 100W (Tc)
• Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-WHSON-8-1
• Package / Case: 8-PowerWDFN

Paquete: -

Request a Quote

BFP520FE6327

Infineon Technologies

LOW-NOISE SI TRANSISTOR

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 3.5V
• Frequency - Transition: 45GHz
• Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
• Gain: 22.5dB
• Power - Max: 100mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
• Current - Collector (Ic) (Max): 40mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Flat Leads
• Supplier Device Package: 4-TSFP

Paquete: -

Request a Quote

CYT2BL5BAAQ0AZEGST

Infineon Technologies

IC MCU 32BT 4.063MB FLSH 100LQFP

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 160MHz
• Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
• Number of I/O: 78
• Program Memory Size: 4.063MB (4.063M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 512K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 57x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

Paquete: -

Request a Quote

TD162N16KOFTIMHPSA2

Infineon Technologies

THYR / DIODE MODULE DK

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 162 A
• Current - On State (It (RMS)) (Max): 260 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 5200A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

Paquete: -

Request a Quote

EAN62906401

Infineon Technologies

AUTO MCU

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

Request a Quote

ISC060N10NM6ATMA1

Infineon Technologies

TRENCH >=100V PG-TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 97A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 3.3V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8 FL
• Package / Case: 8-PowerTDFN

Paquete: -