Página 16 - Infineon Technologies Productos - Transistores - FET, MOSFET - Simple

IPDQ60T022S7AXTMA1

Infineon Technologies

AUTOMOTIVE_COOLMOS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paquete: -

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-

IQE004NE1LM7ATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 15 V
Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs(th) (Max) @ Id: 2V @ 432µA
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
Vgs (Max): ±7V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-5
Package / Case: 8-PowerTDFN

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MOSFET (Metal Oxide)

15 V

58A (Ta), 379A (Tc)

4.5V, 7V

2V @ 432µA

55 nC @ 7 V

6240 pF @ 7.5 V

±7V

-

2.1W (Ta), 89W (Tc)

0.45mOhm @ 30A, 7V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSON-8-5

8-PowerTDFN

IPW65R029CFD7XKSA1

Infineon Technologies

MOSFET N-CH 650V 69A TO247-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 69A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 305W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3
Package / Case: TO-247-3

Paquete: -

En existencias585

MOSFET (Metal Oxide)

650 V

69A (Tc)

-

4.5V @ 1.79mA

145 nC @ 10 V

7149 pF @ 400 V

±20V

-

305W (Tc)

29mOhm @ 35.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3

TO-247-3

IQD016N08NM5CGATMA1

Infineon Technologies

OPTIMOS 6 POWER-TRANSISTOR

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 159µA
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TTFN-9-U02
Package / Case: 9-PowerTDFN

Paquete: -

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MOSFET (Metal Oxide)

80 V

31A (Ta), 323A (Tc)

6V, 10V

3.8V @ 159µA

133 nC @ 10 V

9200 pF @ 40 V

±20V

-

3W (Ta), 333W (Tc)

1.57mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TTFN-9-U02

9-PowerTDFN

IPB80N07S405ATMA1

Infineon Technologies

MOSFET N-CH TO263-3

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paquete: -

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-

80A (Tc)

-

SPS04N60C3AKMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paquete: -

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-

IPF016N10NF2SATMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 274A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 267µA
Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-14
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Paquete: -

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MOSFET (Metal Oxide)

100 V

274A (Tc)

6V, 10V

3.8V @ 267µA

241 nC @ 10 V

11000 pF @ 50 V

±20V

-

300W (Tc)

1.6mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-14

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

IPD380P06NMATMA1

Infineon Technologies

MOSFET P-CH 60V 35A TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -

En existencias61.548

MOSFET (Metal Oxide)

60 V

35A (Tc)

10V

4V @ 1.7mA

63 nC @ 10 V

2500 pF @ 30 V

±20V

-

125W (Tc)

38mOhm @ 35A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IPL60R085P7AUMA1

Infineon Technologies

MOSFET N-CH 600V 39A 4VSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 590µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 154W (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-VSON-4
Package / Case: 4-PowerTSFN

Paquete: -

En existencias1.104

MOSFET (Metal Oxide)

600 V

39A (Tc)

10V

4V @ 590µA

51 nC @ 10 V

2180 pF @ 400 V

±20V

-

154W (Tc)

85mOhm @ 11.8A, 10V

-40°C ~ 150°C (TJ)

Surface Mount

PG-VSON-4

4-PowerTSFN

IGO60R070D1E8220AUMA1

Infineon Technologies

GAN HV

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 2.6mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-DSO-20-85
Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)

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GaNFET (Gallium Nitride)

600 V

31A (Tc)

-

1.6V @ 2.6mA

-

380 pF @ 400 V

-10V

-

125W (Tc)

-

-55°C ~ 150°C (TJ)

Surface Mount

PG-DSO-20-85

20-PowerSOIC (0.433", 11.00mm Width)

ISC0804NLSATMA1

Infineon Technologies

MOSFET N-CH 100V 12A/59A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 28µA
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

Paquete: -

En existencias12.831

MOSFET (Metal Oxide)

100 V

12A (Ta), 59A (Tc)

4.5V, 10V

2.3V @ 28µA

24 nC @ 10 V

1600 pF @ 50 V

±20V

-

2.5W (Ta), 60W (Tc)

10.9mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

IPP011N04NF2SAKMA1

Infineon Technologies

TRENCH PG-TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 201A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 249µA
Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-U05
Package / Case: TO-220-3

Paquete: -

En existencias2.331

MOSFET (Metal Oxide)

40 V

44A (Ta), 201A (Tc)

6V, 10V

3.4V @ 249µA

315 nC @ 10 V

15000 pF @ 20 V

±20V

-

3.8W (Ta), 375W (Tc)

1.15mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-U05

TO-220-3

IPP65R190CFD7AAKSA1

Infineon Technologies

MOSFET N-CH 650V 14A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 77W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3
Package / Case: TO-220-3

Paquete: -

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MOSFET (Metal Oxide)

650 V

14A (Tc)

-

4.5V @ 320µA

28 nC @ 10 V

1291 pF @ 400 V

±20V

-

77W (Tc)

190mOhm @ 6.4A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO220-3

TO-220-3

BTS131E3045ANTMA1

Infineon Technologies

N-CHANNEL POWER MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 75W
Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paquete: -

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MOSFET (Metal Oxide)

50 V

25A (Tc)

4.5V

2.5V @ 1mA

-

1400 pF @ 25 V

±10V

-

75W

60mOhm @ 12A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

IAUS300N08S5N012TATMA1

Infineon Technologies

MOSFET N-CH 80V 300A HDSOP-16-2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80 V
Current - Continuous Drain (Id) @ 25°C: 300A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HDSOP-16-2
Package / Case: 16-PowerSOP Module

Paquete: -

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MOSFET (Metal Oxide)

80 V

300A (Tj)

6V, 10V

3.8V @ 275µA

231 nC @ 10 V

16250 pF @ 40 V

±20V

-

375W (Tc)

1.2mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HDSOP-16-2

16-PowerSOP Module

IPP083N10N5XKSA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.8V @ 49µA
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

Paquete: -

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MOSFET (Metal Oxide)

100 V

73A (Tc)

6V, 10V

3.8V @ 49µA

37 nC @ 10 V

2730 pF @ 50 V

±20V

-

100W (Tc)

8.3mOhm @ 73A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IRL1404PBF-INF

Infineon Technologies

MOSFET N-CH 40V 160A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

Paquete: -

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MOSFET (Metal Oxide)

40 V

160A (Tc)

-

3V @ 250µA

140 nC @ 5 V

6590 pF @ 25 V

±20V

-

200W (Tc)

4mOhm @ 95A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IPB180P04P4L02ATMA2

Infineon Technologies

MOSFET P-CH 40V 180A TO263-7

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.2V @ 410µA
Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V
Vgs (Max): +5V, -16V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)

Paquete: -

En existencias6.468

MOSFET (Metal Oxide)

40 V

180A (Tc)

4.5V, 10V

2.2V @ 410µA

286 nC @ 10 V

18700 pF @ 25 V

+5V, -16V

-

150W (Tc)

2.4mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO263-7-3

TO-263-7, D2PAK (6 Leads + Tab)

IQE008N03LM5ATMA1

Infineon Technologies

TRENCH <= 40V PG-TSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-4
Package / Case: 8-PowerTDFN

Paquete: -

En existencias5.793

MOSFET (Metal Oxide)

30 V

27A (Ta), 253A (Tc)

4.5V, 10V

2V @ 250µA

64 nC @ 10 V

5700 pF @ 15 V

±16V

-

2.1W (Ta), 89W (Tc)

0.85mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSON-8-4

8-PowerTDFN

IMW65R048M1HXKSA1

Infineon Technologies

MOSFET 650V NCH SIC TRENCH

FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs(th) (Max) @ Id: 5.7V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V
Vgs (Max): +23V, -5V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO247-3-41
Package / Case: TO-247-3

Paquete: -

En existencias4.305

SiCFET (Silicon Carbide)

650 V

39A (Tc)

18V

5.7V @ 6mA

33 nC @ 18 V

1118 pF @ 400 V

+23V, -5V

-

125W (Tc)

64mOhm @ 20.1A, 18V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO247-3-41

TO-247-3

ISC045N03L5SATMA1

Infineon Technologies

MOSFET N-CH 30V 18A/63A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

Paquete: -

En existencias33.714

MOSFET (Metal Oxide)

30 V

18A (Ta), 63A (Tc)

4.5V, 10V

2V @ 250µA

13 nC @ 10 V

870 pF @ 15 V

±20V

-

2.5W (Ta), 30W (Tc)

4.5mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

IGLR60R190D1E8238XUMA1

Infineon Technologies

GAN HV

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 1.6V @ 960µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V
Vgs (Max): -10V
FET Feature: -
Power Dissipation (Max): 55.5W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-6
Package / Case: 8-PowerTDFN

Paquete: -

Request a Quote

GaNFET (Gallium Nitride)

600 V

12.8A (Tc)

-

1.6V @ 960µA

-

157 pF @ 400 V

-10V

-

55.5W (Tc)

-

-40°C ~ 150°C (TJ)

Surface Mount

PG-TSON-8-6

8-PowerTDFN

SPS01N60C3BKMA1

Infineon Technologies

0.8A, 600V, N-CHANNEL MOSFET, T

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 11W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3-11
Package / Case: TO-251-3 Stub Leads, IPAK

Paquete: -

Request a Quote

MOSFET (Metal Oxide)

600 V

800mA (Tc)

10V

3.9V @ 250µA

5 nC @ 10 V

100 pF @ 25 V

±20V

-

11W (Tc)

6Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO251-3-11

TO-251-3 Stub Leads, IPAK

IAUA200N04S5N010AUMA1

Infineon Technologies

MOSFET N-CH 40V 200A 5HSOF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 3.4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-HSOF-5-1
Package / Case: 5-PowerSFN

Paquete: -

En existencias12.132

MOSFET (Metal Oxide)

40 V

200A (Tc)

7V, 10V

3.4V @ 100µA

132 nC @ 10 V

7650 pF @ 25 V

±20V

-

167W (Tc)

1mOhm @ 100A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-HSOF-5-1

5-PowerSFN

BSZ018N04LS6ATMA1

Infineon Technologies

MOSFET N-CH 40V 27A/40A TSDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSDSON-8-FL
Package / Case: 8-PowerTDFN

Paquete: -

En existencias54.564

MOSFET (Metal Oxide)

40 V

27A (Ta), 40A (Tc)

4.5V, 10V

2.3V @ 250µA

31 nC @ 10 V

2700 pF @ 20 V

±20V

-

2.5W (Ta), 83W (Tc)

1.8mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSDSON-8-FL

8-PowerTDFN

IPB60R090CFD7ATMA1

Infineon Technologies

MOSFET N-CH 600V 25A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 570µA
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 124W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Paquete: -

En existencias3.780

MOSFET (Metal Oxide)

600 V

25A (Tc)

10V

4.5V @ 570µA

51 nC @ 10 V

2103 pF @ 400 V

±20V

-

124W (Tc)

90mOhm @ 11.4A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TO263-3-2

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

BSC0704LSATMA1

Infineon Technologies

MOSFET N-CH 60V 11A/47A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 47A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 14µA
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

Paquete: -

Request a Quote

MOSFET (Metal Oxide)

60 V

11A (Ta), 47A (Tc)

4.5V, 10V

2.3V @ 14µA

9.4 nC @ 4.5 V

1300 pF @ 30 V

±20V

-

2.1W (Ta), 36W (Tc)

9.4mOhm @ 24A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

IQDH45N04LM6ATMA1

Infineon Technologies

TRENCH <= 40V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 1.449mA
Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 333W (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSON-8-U04
Package / Case: 8-PowerTDFN

Paquete: -

En existencias14.895

MOSFET (Metal Oxide)

40 V

60A (Ta), 637A (Tc)

4.5V, 10V

2.3V @ 1.449mA

172 nC @ 10 V

12000 pF @ 20 V

±20V

-

3W (Ta), 333W (Tc)

0.45mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TSON-8-U04

8-PowerTDFN

Nº de pieza	Fabricantes	Descripción	Paquete	En existencias	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
IPDQ60T022S7AXTMA1	Infineon Technologies	AUTOMOTIVE_COOLMOS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IQE004NE1LM7ATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 15 V Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 2V @ 432µA Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V Vgs (Max): ±7V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-5 Package / Case: 8-PowerTDFN	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	15 V	58A (Ta), 379A (Tc)	4.5V, 7V	2V @ 432µA	55 nC @ 7 V	6240 pF @ 7.5 V	±7V	-	2.1W (Ta), 89W (Tc)	0.45mOhm @ 30A, 7V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-5	8-PowerTDFN
IPW65R029CFD7XKSA1	Infineon Technologies	MOSFET N-CH 650V 69A TO247-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 69A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 305W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3 Package / Case: TO-247-3	Paquete: -	En existencias585	MOSFET (Metal Oxide)	650 V	69A (Tc)	-	4.5V @ 1.79mA	145 nC @ 10 V	7149 pF @ 400 V	±20V	-	305W (Tc)	29mOhm @ 35.8A, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3	TO-247-3
IQD016N08NM5CGATMA1	Infineon Technologies	OPTIMOS 6 POWER-TRANSISTOR FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 323A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 159µA Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 1.57mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TTFN-9-U02 Package / Case: 9-PowerTDFN	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	80 V	31A (Ta), 323A (Tc)	6V, 10V	3.8V @ 159µA	133 nC @ 10 V	9200 pF @ 40 V	±20V	-	3W (Ta), 333W (Tc)	1.57mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TTFN-9-U02	9-PowerTDFN
IPB80N07S405ATMA1	Infineon Technologies	MOSFET N-CH TO263-3 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paquete: -	Request a Quote	-	-	80A (Tc)	-	-	-	-	-	-	-	-	-	-	-	-
SPS04N60C3AKMA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	Paquete: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IPF016N10NF2SATMA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 274A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 267µA Gate Charge (Qg) (Max) @ Vgs: 241 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-14 Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	100 V	274A (Tc)	6V, 10V	3.8V @ 267µA	241 nC @ 10 V	11000 pF @ 50 V	±20V	-	300W (Tc)	1.6mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-14	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
IPD380P06NMATMA1	Infineon Technologies	MOSFET P-CH 60V 35A TO252-3 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 1.7mA Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3 Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63	Paquete: -	En existencias61.548	MOSFET (Metal Oxide)	60 V	35A (Tc)	10V	4V @ 1.7mA	63 nC @ 10 V	2500 pF @ 30 V	±20V	-	125W (Tc)	38mOhm @ 35A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO252-3	TO-252-3, DPAK (2 Leads + Tab), SC-63
IPL60R085P7AUMA1	Infineon Technologies	MOSFET N-CH 600V 39A 4VSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 590µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 154W (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 11.8A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-VSON-4 Package / Case: 4-PowerTSFN	Paquete: -	En existencias1.104	MOSFET (Metal Oxide)	600 V	39A (Tc)	10V	4V @ 590µA	51 nC @ 10 V	2180 pF @ 400 V	±20V	-	154W (Tc)	85mOhm @ 11.8A, 10V	-40°C ~ 150°C (TJ)	Surface Mount	PG-VSON-4	4-PowerTSFN
IGO60R070D1E8220AUMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 2.6mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-DSO-20-85 Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)	Paquete: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	31A (Tc)	-	1.6V @ 2.6mA	-	380 pF @ 400 V	-10V	-	125W (Tc)	-	-55°C ~ 150°C (TJ)	Surface Mount	PG-DSO-20-85	20-PowerSOIC (0.433", 11.00mm Width)
ISC0804NLSATMA1	Infineon Technologies	MOSFET N-CH 100V 12A/59A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 59A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 28µA Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	Paquete: -	En existencias12.831	MOSFET (Metal Oxide)	100 V	12A (Ta), 59A (Tc)	4.5V, 10V	2.3V @ 28µA	24 nC @ 10 V	1600 pF @ 50 V	±20V	-	2.5W (Ta), 60W (Tc)	10.9mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
IPP011N04NF2SAKMA1	Infineon Technologies	TRENCH PG-TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 201A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.4V @ 249µA Gate Charge (Qg) (Max) @ Vgs: 315 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 375W (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-U05 Package / Case: TO-220-3	Paquete: -	En existencias2.331	MOSFET (Metal Oxide)	40 V	44A (Ta), 201A (Tc)	6V, 10V	3.4V @ 249µA	315 nC @ 10 V	15000 pF @ 20 V	±20V	-	3.8W (Ta), 375W (Tc)	1.15mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-U05	TO-220-3
IPP65R190CFD7AAKSA1	Infineon Technologies	MOSFET N-CH 650V 14A TO220-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4.5V @ 320µA Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1291 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 77W (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 6.4A, 10V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3 Package / Case: TO-220-3	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	650 V	14A (Tc)	-	4.5V @ 320µA	28 nC @ 10 V	1291 pF @ 400 V	±20V	-	77W (Tc)	190mOhm @ 6.4A, 10V	-40°C ~ 150°C (TJ)	Through Hole	PG-TO220-3	TO-220-3
BTS131E3045ANTMA1	Infineon Technologies	N-CHANNEL POWER MOSFET FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 50 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 75W Rds On (Max) @ Id, Vgs: 60mOhm @ 12A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	50 V	25A (Tc)	4.5V	2.5V @ 1mA	-	1400 pF @ 25 V	±10V	-	75W	60mOhm @ 12A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	D2PAK	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
IAUS300N08S5N012TATMA1	Infineon Technologies	MOSFET N-CH 80V 300A HDSOP-16-2 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80 V Current - Continuous Drain (Id) @ 25°C: 300A (Tj) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 275µA Gate Charge (Qg) (Max) @ Vgs: 231 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16250 pF @ 40 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HDSOP-16-2 Package / Case: 16-PowerSOP Module	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	80 V	300A (Tj)	6V, 10V	3.8V @ 275µA	231 nC @ 10 V	16250 pF @ 40 V	±20V	-	375W (Tc)	1.2mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HDSOP-16-2	16-PowerSOP Module
IPP083N10N5XKSA1	Infineon Technologies	TRENCH >=100V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.8V @ 49µA Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 8.3mOhm @ 73A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220-3-1 Package / Case: TO-220-3	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	100 V	73A (Tc)	6V, 10V	3.8V @ 49µA	37 nC @ 10 V	2730 pF @ 50 V	±20V	-	100W (Tc)	8.3mOhm @ 73A, 10V	-55°C ~ 175°C (TJ)	Through Hole	PG-TO220-3-1	TO-220-3
IRL1404PBF-INF	Infineon Technologies	MOSFET N-CH 40V 160A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 200W (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	40 V	160A (Tc)	-	3V @ 250µA	140 nC @ 5 V	6590 pF @ 25 V	±20V	-	200W (Tc)	4mOhm @ 95A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
IPB180P04P4L02ATMA2	Infineon Technologies	MOSFET P-CH 40V 180A TO263-7 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.2V @ 410µA Gate Charge (Qg) (Max) @ Vgs: 286 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 25 V Vgs (Max): +5V, -16V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2PAK (6 Leads + Tab)	Paquete: -	En existencias6.468	MOSFET (Metal Oxide)	40 V	180A (Tc)	4.5V, 10V	2.2V @ 410µA	286 nC @ 10 V	18700 pF @ 25 V	+5V, -16V	-	150W (Tc)	2.4mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TO263-7-3	TO-263-7, D2PAK (6 Leads + Tab)
IQE008N03LM5ATMA1	Infineon Technologies	TRENCH <= 40V PG-TSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 253A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 15 V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-4 Package / Case: 8-PowerTDFN	Paquete: -	En existencias5.793	MOSFET (Metal Oxide)	30 V	27A (Ta), 253A (Tc)	4.5V, 10V	2V @ 250µA	64 nC @ 10 V	5700 pF @ 15 V	±16V	-	2.1W (Ta), 89W (Tc)	0.85mOhm @ 20A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-4	8-PowerTDFN
IMW65R048M1HXKSA1	Infineon Technologies	MOSFET 650V NCH SIC TRENCH FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Drive Voltage (Max Rds On, Min Rds On): 18V Vgs(th) (Max) @ Id: 5.7V @ 6mA Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 400 V Vgs (Max): +23V, -5V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 64mOhm @ 20.1A, 18V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO247-3-41 Package / Case: TO-247-3	Paquete: -	En existencias4.305	SiCFET (Silicon Carbide)	650 V	39A (Tc)	18V	5.7V @ 6mA	33 nC @ 18 V	1118 pF @ 400 V	+23V, -5V	-	125W (Tc)	64mOhm @ 20.1A, 18V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO247-3-41	TO-247-3
ISC045N03L5SATMA1	Infineon Technologies	MOSFET N-CH 30V 18A/63A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 63A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 15 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 30W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	Paquete: -	En existencias33.714	MOSFET (Metal Oxide)	30 V	18A (Ta), 63A (Tc)	4.5V, 10V	2V @ 250µA	13 nC @ 10 V	870 pF @ 15 V	±20V	-	2.5W (Ta), 30W (Tc)	4.5mOhm @ 30A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IGLR60R190D1E8238XUMA1	Infineon Technologies	GAN HV FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 1.6V @ 960µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 157 pF @ 400 V Vgs (Max): -10V FET Feature: - Power Dissipation (Max): 55.5W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-6 Package / Case: 8-PowerTDFN	Paquete: -	Request a Quote	GaNFET (Gallium Nitride)	600 V	12.8A (Tc)	-	1.6V @ 960µA	-	157 pF @ 400 V	-10V	-	55.5W (Tc)	-	-40°C ~ 150°C (TJ)	Surface Mount	PG-TSON-8-6	8-PowerTDFN
SPS01N60C3BKMA1	Infineon Technologies	0.8A, 600V, N-CHANNEL MOSFET, T FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 11W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3-11 Package / Case: TO-251-3 Stub Leads, IPAK	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	600 V	800mA (Tc)	10V	3.9V @ 250µA	5 nC @ 10 V	100 pF @ 25 V	±20V	-	11W (Tc)	6Ohm @ 500mA, 10V	-55°C ~ 150°C (TJ)	Through Hole	PG-TO251-3-11	TO-251-3 Stub Leads, IPAK
IAUA200N04S5N010AUMA1	Infineon Technologies	MOSFET N-CH 40V 200A 5HSOF FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 3.4V @ 100µA Gate Charge (Qg) (Max) @ Vgs: 132 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7650 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-HSOF-5-1 Package / Case: 5-PowerSFN	Paquete: -	En existencias12.132	MOSFET (Metal Oxide)	40 V	200A (Tc)	7V, 10V	3.4V @ 100µA	132 nC @ 10 V	7650 pF @ 25 V	±20V	-	167W (Tc)	1mOhm @ 100A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-HSOF-5-1	5-PowerSFN
BSZ018N04LS6ATMA1	Infineon Technologies	MOSFET N-CH 40V 27A/40A TSDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSDSON-8-FL Package / Case: 8-PowerTDFN	Paquete: -	En existencias54.564	MOSFET (Metal Oxide)	40 V	27A (Ta), 40A (Tc)	4.5V, 10V	2.3V @ 250µA	31 nC @ 10 V	2700 pF @ 20 V	±20V	-	2.5W (Ta), 83W (Tc)	1.8mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSDSON-8-FL	8-PowerTDFN
IPB60R090CFD7ATMA1	Infineon Technologies	MOSFET N-CH 600V 25A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4.5V @ 570µA Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 400 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 124W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 11.4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	Paquete: -	En existencias3.780	MOSFET (Metal Oxide)	600 V	25A (Tc)	10V	4.5V @ 570µA	51 nC @ 10 V	2103 pF @ 400 V	±20V	-	124W (Tc)	90mOhm @ 11.4A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TO263-3-2	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
BSC0704LSATMA1	Infineon Technologies	MOSFET N-CH 60V 11A/47A TDSON FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 47A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 14µA Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 30 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 24A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8-6 Package / Case: 8-PowerTDFN	Paquete: -	Request a Quote	MOSFET (Metal Oxide)	60 V	11A (Ta), 47A (Tc)	4.5V, 10V	2.3V @ 14µA	9.4 nC @ 4.5 V	1300 pF @ 30 V	±20V	-	2.1W (Ta), 36W (Tc)	9.4mOhm @ 24A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8-6	8-PowerTDFN
IQDH45N04LM6ATMA1	Infineon Technologies	TRENCH <= 40V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 637A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 1.449mA Gate Charge (Qg) (Max) @ Vgs: 172 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 333W (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TSON-8-U04 Package / Case: 8-PowerTDFN	Paquete: -	En existencias14.895	MOSFET (Metal Oxide)	40 V	60A (Ta), 637A (Tc)	4.5V, 10V	2.3V @ 1.449mA	172 nC @ 10 V	12000 pF @ 20 V	±20V	-	3W (Ta), 333W (Tc)	0.45mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	PG-TSON-8-U04	8-PowerTDFN