Página 143 - Infineon Technologies Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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Infineon Technologies Productos - Transistores - FET, MOSFET - Simple

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Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
IPA60R125P6XKSA1
Infineon Technologies

MOSFET N-CH 600V TO220FP-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 960µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 34W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 11.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-FP
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias2.416
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
4.5V @ 960µA
56nC @ 10V
2660pF @ 100V
±20V
-
34W (Tc)
125 mOhm @ 11.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO-220-FP
TO-220-3 Full Pack
IPAN80R280P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 360µA
  • Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 7.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias6.528
MOSFET (Metal Oxide)
800V
17A (Tc)
10V
3.5V @ 360µA
36nC @ 10V
1200pF @ 500V
±20V
-
30W (Tc)
280 mOhm @ 7.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
IPP015N04NGXKSA1
Infineon Technologies

MOSFET N-CH 40V 120A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.5 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias4.704
MOSFET (Metal Oxide)
40V
120A (Tc)
10V
4V @ 200µA
250nC @ 10V
20000pF @ 20V
±20V
-
250W (Tc)
1.5 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO220-3-1
TO-220-3
IPW80R360P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO247-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 84W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO247-3
  • Package / Case: TO-247-3
Paquete: TO-247-3
En existencias7.344
MOSFET (Metal Oxide)
800V
13A (Tc)
10V
3.5V @ 280µA
30nC @ 10V
930pF @ 500V
±20V
-
84W (Tc)
360 mOhm @ 5.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO247-3
TO-247-3
IPP80R360P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 84W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias7.824
MOSFET (Metal Oxide)
800V
13A (Tc)
10V
3.5V @ 280µA
30nC @ 10V
930pF @ 500V
±20V
-
84W (Tc)
360 mOhm @ 5.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPA80R360P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 280µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias3.344
MOSFET (Metal Oxide)
800V
13A (Tc)
10V
3.5V @ 280µA
30nC @ 10V
930pF @ 500V
±20V
-
30W (Tc)
360 mOhm @ 5.6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
hot AUIRFS8407
Infineon Technologies

MOSFET N-CH 40V 195A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 225nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7330pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 230W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.8 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias5.088
MOSFET (Metal Oxide)
40V
195A (Tc)
10V
4V @ 150µA
225nC @ 10V
7330pF @ 25V
±20V
-
230W (Tc)
1.8 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPAN80R450P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 220µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias6.928
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
3.5V @ 220µA
24nC @ 10V
770pF @ 500V
±20V
-
29W (Tc)
450 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
IPA80R450P7XKSA1
Infineon Technologies

MOSFET N-CH 800V 11A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 220µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: Super Junction
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3F
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias2.272
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
3.5V @ 220µA
24nC @ 10V
770pF @ 500V
±20V
Super Junction
29W (Tc)
450 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3F
TO-220-3 Full Pack
IPP80R600P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias4.784
MOSFET (Metal Oxide)
800V
8A (Tc)
10V
3.5V @ 170µA
20nC @ 10V
570pF @ 500V
±20V
-
60W (Tc)
600 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPA80R600P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 28W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias3.808
MOSFET (Metal Oxide)
800V
8A (Tc)
10V
3.5V @ 170µA
20nC @ 10V
570pF @ 500V
±20V
-
28W (Tc)
600 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
BTS282ZE3180AATMA2
Infineon Technologies

MOSFET N-CH 49V 80A TO-220-7

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 49V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 240µA
  • Gate Charge (Qg) (Max) @ Vgs: 232nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Temperature Sensing Diode
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 36A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-7-1
  • Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
Paquete: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
En existencias6.208
MOSFET (Metal Oxide)
49V
80A (Tc)
4.5V, 10V
2V @ 240µA
232nC @ 10V
4800pF @ 25V
±20V
Temperature Sensing Diode
300W (Tc)
6.5 mOhm @ 36A, 10V
-40°C ~ 175°C (TJ)
Surface Mount
PG-TO263-7-1
TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
IPP80R750P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias6.000
MOSFET (Metal Oxide)
800V
7A (Tc)
10V
3.5V @ 140µA
17nC @ 10V
460pF @ 500V
±20V
-
51W (Tc)
750 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPA80R750P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 27W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias5.200
MOSFET (Metal Oxide)
800V
7A (Tc)
10V
3.5V @ 140µA
17nC @ 10V
460pF @ 500V
±20V
-
27W (Tc)
750 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
IPS80R600P7AKMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
Paquete: TO-251-3 Stub Leads, IPak
En existencias4.256
MOSFET (Metal Oxide)
800V
8A (Tc)
10V
3.5V @ 170µA
20nC @ 10V
570pF @ 500V
±20V
-
60W (Tc)
600 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
IPU80R600P7AKMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 170µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 60W (Tc)
  • Rds On (Max) @ Id, Vgs: 600 mOhm @ 3.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias3.680
MOSFET (Metal Oxide)
800V
8A (Tc)
10V
3.5V @ 170µA
20nC @ 10V
570pF @ 500V
±20V
-
60W (Tc)
600 mOhm @ 3.4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IPS80R750P7AKMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
Paquete: TO-251-3 Stub Leads, IPak
En existencias3.328
MOSFET (Metal Oxide)
800V
7A (Tc)
10V
3.5V @ 140µA
17nC @ 10V
460pF @ 500V
±20V
-
51W (Tc)
750 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
IPU80R750P7AKMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 140µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 51W (Tc)
  • Rds On (Max) @ Id, Vgs: 750 mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias2.544
MOSFET (Metal Oxide)
800V
7A (Tc)
10V
3.5V @ 140µA
17nC @ 10V
460pF @ 500V
±20V
-
51W (Tc)
750 mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IPP80R900P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias6.752
MOSFET (Metal Oxide)
800V
6A (Tc)
10V
3.5V @ 110µA
15nC @ 10V
350pF @ 500V
±20V
-
45W (Tc)
900 mOhm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPA80R900P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 26W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias3.296
MOSFET (Metal Oxide)
800V
6A (Tc)
10V
3.5V @ 110µA
15nC @ 10V
350pF @ 500V
±20V
-
26W (Tc)
900 mOhm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
IPP023N04NGXKSA1
Infineon Technologies

MOSFET N-CH 40V 90A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 95µA
  • Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10000pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.216
MOSFET (Metal Oxide)
40V
90A (Tc)
10V
4V @ 95µA
120nC @ 10V
10000pF @ 20V
±20V
-
167W (Tc)
2.3 mOhm @ 90A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP100N08N3GXKSA1
Infineon Technologies

MOSFET N-CH 80V 70A TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 46µA
  • Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 46A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO-220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias22.764
MOSFET (Metal Oxide)
80V
70A (Tc)
6V, 10V
3.5V @ 46µA
35nC @ 10V
2410pF @ 40V
±20V
-
100W (Tc)
10 mOhm @ 46A, 10V
-55°C ~ 175°C (TJ)
Through Hole
PG-TO-220-3
TO-220-3
IPP80R1K2P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias6.736
MOSFET (Metal Oxide)
800V
4.5A (Tc)
10V
3.5V @ 80µA
11nC @ 10V
300pF @ 500V
±20V
-
37W (Tc)
1.2 Ohm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220-3
TO-220-3
IPA80R1K2P7XKSA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO220-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220 Full Pack
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias3.872
MOSFET (Metal Oxide)
800V
4.5A (Tc)
10V
3.5V @ 80µA
11nC @ 10V
300pF @ 500V
±20V
-
25W (Tc)
1.2 Ohm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO220 Full Pack
TO-220-3 Full Pack
IPS80R900P7AKMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
Paquete: TO-251-3 Stub Leads, IPak
En existencias3.776
MOSFET (Metal Oxide)
800V
6A (Tc)
10V
3.5V @ 110µA
15nC @ 10V
350pF @ 500V
±20V
-
45W (Tc)
900 mOhm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
IPU80R900P7AKMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 110µA
  • Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 900 mOhm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias3.152
MOSFET (Metal Oxide)
800V
6A (Tc)
10V
3.5V @ 110µA
15nC @ 10V
350pF @ 500V
±20V
-
45W (Tc)
900 mOhm @ 2.2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA
IPS80R1K2P7AKMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Stub Leads, IPak
Paquete: TO-251-3 Stub Leads, IPak
En existencias4.592
MOSFET (Metal Oxide)
800V
4.5A (Tc)
10V
3.5V @ 80µA
11nC @ 10V
300pF @ 500V
±20V
-
37W (Tc)
1.2 Ohm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Stub Leads, IPak
IPU80R1K2P7AKMA1
Infineon Technologies

MOSFET N-CH 800V COOLMOS TO251-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 500V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias6.352
MOSFET (Metal Oxide)
800V
4.5A (Tc)
10V
3.5V @ 80µA
11nC @ 10V
300pF @ 500V
±20V
-
37W (Tc)
1.2 Ohm @ 1.7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
PG-TO251-3
TO-251-3 Short Leads, IPak, TO-251AA