GeneSiC Semiconductor Productos

MBRH20030L

GeneSiC Semiconductor

DIODE MODULE 30V 200A D-67

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 200A
• Voltage - Forward (Vf) (Max) @ If: 580mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: D-67
• Supplier Device Package: D-67
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: D-67

GKR130/18

GeneSiC Semiconductor

DIODE GP 1.8KV 165A DO205AA

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1800V
• Current - Average Rectified (Io): 165A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 22mA @ 1800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-205AA (DO-8)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-205AA, DO-8, Stud

MBR8060R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 60V DO5

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 80A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 80A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -55°C ~ 160°C

Paquete: DO-203AB, DO-5, Stud

MBR6080R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 80V DO5

• Diode Type: Schottky, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 840mV @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-203AB, DO-5, Stud

MBR6035

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 60A DO5

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io): 60A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 20V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-203AB, DO-5, Stud

FR85GR05

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 85A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 400V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 85A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 25µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -40°C ~ 125°C

Paquete: DO-203AB, DO-5, Stud

S70K

GeneSiC Semiconductor

DIODE GEN PURP 800V 70A DO5

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 70A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 180°C

Paquete: DO-203AB, DO-5, Stud

1N3213R

GeneSiC Semiconductor

DIODE GEN PURP REV 500V 15A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 500V
• Current - Average Rectified (Io): 15A
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 15A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 50V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 175°C

Paquete: DO-203AB, DO-5, Stud

FR16K05

GeneSiC Semiconductor

DIODE GEN PURP 800V 16A DO4

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500ns
• Current - Reverse Leakage @ Vr: 25µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-4
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-203AA, DO-4, Stud

1N8024-GA

GeneSiC Semiconductor

DIODE SCHOTTKY 1.2KV 750MA TO257

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 750mA
• Voltage - Forward (Vf) (Max) @ If: 1.74V @ 750mA
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Capacitance @ Vr, F: 66pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-257-3
• Supplier Device Package: TO-257
• Operating Temperature - Junction: -55°C ~ 250°C

Paquete: TO-257-3

S85YR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV 85A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 85A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 85A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 100V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-203AB, DO-5, Stud

S300YR

GeneSiC Semiconductor

DIODE GEN PURP REV 1.6KV DO9

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 1600V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-9
• Operating Temperature - Junction: -60°C ~ 180°C

Paquete: DO-205AB, DO-9, Stud

MURF30060

GeneSiC Semiconductor

DIODE GEN PURP 600V 150A TO244

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io) (per Diode): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150ns
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244

Paquete: TO-244AB

MBR40040CTL

GeneSiC Semiconductor

DIODE SCHOTTKY 40V 200A 2 TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 3mA @ 40V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

Paquete: Twin Tower

MBRT50040

GeneSiC Semiconductor

DIODE MODULE 40V 500A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 500A (DC)
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

Paquete: Three Tower

MBR50040CTR

GeneSiC Semiconductor

DIODE MODULE 40V 500A 2TOWER

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 500A (DC)
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Twin Tower
• Supplier Device Package: Twin Tower

Paquete: Twin Tower

MSRTA400100(A)

GeneSiC Semiconductor

DIODE MODULE 1KV 400A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io) (per Diode): 400A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 600V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

Paquete: Three Tower

MSRTA200120(A)D

GeneSiC Semiconductor

DIODE GEN 1.2KV 200A 3 TOWER

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

Paquete: Three Tower

MBRT20035

GeneSiC Semiconductor

DIODE MODULE 35V 200A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 35V
• Current - Average Rectified (Io) (per Diode): 200A (DC)
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

Paquete: Three Tower

MBRT300200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 150A 3 TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io) (per Diode): 150A
• Voltage - Forward (Vf) (Max) @ If: 920mV @ 150A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 200V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

Paquete: Three Tower

MBR2X100A060

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 100A SOT227

• Diode Configuration: 2 Independent
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io) (per Diode): 100A
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 60V
• Operating Temperature - Junction: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Paquete: SOT-227-4, miniBLOC

MBRT20040

GeneSiC Semiconductor

DIODE MODULE 40V 200A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 200A (DC)
• Voltage - Forward (Vf) (Max) @ If: 750mV @ 100A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 20V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

Paquete: Three Tower

KBPC5008W

GeneSiC Semiconductor

DIODE BRIDGE 800V 50A KBPC-W

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Current - Reverse Leakage @ Vr: 5µA @ 800V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-Square, KBPC-W
• Supplier Device Package: KBPC-W

Paquete: 4-Square, KBPC-W

GD2X100MPS12N

GeneSiC Semiconductor

DIODE MOD SIC 1200V 136A SOT227

• Diode Configuration: 2 Independent
• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io) (per Diode): 136A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 25 µA @ 1200 V
• Operating Temperature - Junction: -55°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227

Paquete: -

GBJ6M

GeneSiC Semiconductor

1000V 6A GBJ SINGLE PHASE BRIDGE

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1 kV
• Current - Average Rectified (Io): 6 A
• Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 3 A
• Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBJ
• Supplier Device Package: GBJ

Paquete: -

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MSRTA50060A

GeneSiC Semiconductor

DIODE MODULE GP 600V 500A 3TOWER

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io) (per Diode): 500A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25 µA @ 600 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Three Tower
• Supplier Device Package: Three Tower

Paquete: -

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GB50MPS17-247

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 216A TO247

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 1700 V
• Current - Average Rectified (Io): 216A
• Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 60 µA @ 1700 V
• Capacitance @ Vr, F: 3193pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-2
• Supplier Device Package: TO-247-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: -

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GE04MPS06Q

GeneSiC Semiconductor

650V 4A PQFN 8X8 SIC SCHOTTKY MP

• Diode Type: Schottky - Single
• Voltage - Peak Reverse (Max): 650V
• Current - Max: 4 A
• Capacitance @ Vr, F: -
• Resistance @ If, F: -
• Power Dissipation (Max): -
• Operating Temperature: -
• Package / Case: 4-PowerVSFN
• Supplier Device Package: QFN8x8

Paquete: -

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