Diodes Incorporated Productos

DMP3068L-13

Diodes Incorporated

MOSFET P-CH 30V 3.9A SOT23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 708pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 72 mOhm @ 4.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

ZVNL110ASTZ

Diodes Incorporated

MOSFET N-CH 100V 320MA TO92-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: E-Line (TO-92 compatible)
• Package / Case: E-Line-3

Paquete: E-Line-3

ZXM62P02E6TA

Diodes Incorporated

MOSFET P-CH 20V 2.3A SOT23-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
• Vgs(th) (Max) @ Id: 700mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 1.6A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-6
• Package / Case: SOT-23-6

Paquete: SOT-23-6

ZX5T853ZTA

Diodes Incorporated

TRANS NPN 100V 4.5A SOT-89

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 4.5A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 195mV @ 500mA, 5A
• Current - Collector Cutoff (Max): 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
• Power - Max: 2.1W
• Frequency - Transition: 130MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

Paquete: TO-243AA

FMMTL618TC

Diodes Incorporated

TRANS NPN 20V 1.25A SOT23-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1.25A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 10nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
• Power - Max: 500mW
• Frequency - Transition: 195MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

FZT968TA

Diodes Incorporated

TRANS PNP 12V 6A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 6A
• Voltage - Collector Emitter Breakdown (Max): 12V
• Vce Saturation (Max) @ Ib, Ic: 450mV @ 250mA, 6A
• Current - Collector Cutoff (Max): 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 1V
• Power - Max: 3W
• Frequency - Transition: 80MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

Paquete: TO-261-4, TO-261AA

ZXTN19020DGTA

Diodes Incorporated

TRANS NPN 20V 9A SOT223

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 9A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 450mA, 9A
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
• Power - Max: 3W
• Frequency - Transition: 160MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

Paquete: TO-261-4, TO-261AA

FZT796ATA

Diodes Incorporated

TRANS PNP 200V 0.5A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 200V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 20mA, 200mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 10V
• Power - Max: 2W
• Frequency - Transition: 100MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

Paquete: TO-261-4, TO-261AA

FZT749TA

Diodes Incorporated

TRANS PNP 25V 3A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 25V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
• Power - Max: 2W
• Frequency - Transition: 160MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: SOT-223

Paquete: TO-261-4, TO-261AA

ZXTC6720MCTA

Diodes Incorporated

TRANS NPN/PNP 80V/70V 8DFN

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 3.5A, 2.5A
• Voltage - Collector Emitter Breakdown (Max): 80V, 70V
• Vce Saturation (Max) @ Ib, Ic: 340mV @ 300mA, 3.5A / 270mV @ 200mA, 1.5A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V / 40 @ 1.5A, 5V
• Power - Max: 1.7W
• Frequency - Transition: 160MHz, 180MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-WDFN Exposed Pad
• Supplier Device Package: 8-DFN (3x2)

Paquete: 8-WDFN Exposed Pad

1SMB5939B-13

Diodes Incorporated

DIODE ZENER 39V 3W SMB

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 45 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMB

Paquete: DO-214AA, SMB

MMBZ5254BS-7

Diodes Incorporated

DIODE ZENER ARRAY 27V SOT363

• Configuration: 2 Independent
• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±5%
• Power - Max: 200mW
• Impedance (Max) (Zzt): 41 Ohms
• Current - Reverse Leakage @ Vr: 100nA @ 21V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363

S1D-13

Diodes Incorporated

DIODE GEN PURP 200V 1A SMA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 3µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: DO-214AC, SMA

B360AE-13

Diodes Incorporated

SCHOTTKY RECTIFIER SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 650mV @ 2A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200µA @ 60V
• Capacitance @ Vr, F: 125pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: DO-214AC, SMA

SD103CWS-7-F

Diodes Incorporated

DIODE SCHOTTKY 20V 350MA SOD323

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 350mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10ns
• Current - Reverse Leakage @ Vr: 5µA @ 10V
• Capacitance @ Vr, F: 28pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -65°C ~ 125°C

Paquete: SC-76, SOD-323

SBR130S3-7

Diodes Incorporated

DIODE SBR 30V 1A SOD323

• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 460mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50µA @ 30V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: SOD-323
• Operating Temperature - Junction: -65°C ~ 150°C

Paquete: SC-76, SOD-323

SBG1630CT-T

Diodes Incorporated

DIODE ARRAY SCHOTTKY 30V D2PAK

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io) (per Diode): 16A
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1mA @ 30V
• Operating Temperature - Junction: -65°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB (D2PAK)

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AP7342D-3330FS6-7

Diodes Incorporated

IC REG LIN 3V/3.3V X2DFN1212-6

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 2
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 3V, 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.29V @ 150mA, 0.29V @ 150mA
• Current - Output: 150mA, 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 100µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: X2-DFN1212-6

Paquete: 6-XFDFN Exposed Pad

74AUP2G32RA3-7

Diodes Incorporated

IC GATE OR 2CH 2IN X2-DFN1210-8

• Logic Type: OR Gate
• Number of Circuits: 2
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 0.8 V ~ 3.6 V
• Current - Quiescent (Max): 0.5µA
• Current - Output High, Low: 4mA, 4mA
• Logic Level - Low: 0.7 V ~ 0.9 V
• Logic Level - High: 1.6 V ~ 2 V
• Max Propagation Delay @ V, Max CL: 6.4ns @ 3.3V, 30pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: X2-DFN1210-8
• Package / Case: 8-XFDFN

Paquete: 8-XFDFN

74LVCH244AQ20-13

Diodes Incorporated

IC BUFF/DVR TRI-ST DUAL 20QFN

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-VFQFN Exposed Pad
• Supplier Device Package: V-QFN4525-20

Paquete: 20-VFQFN Exposed Pad

PI6C41204LE-2017

Diodes Incorporated

CLOCK BUFFER TSSOP-20

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

PI49FCT3807AHE-2017

Diodes Incorporated

CLOCK BUFFER SSOP-20

• Type: -
• Number of Circuits: -
• Ratio - Input:Output: -
• Differential - Input:Output: -
• Input: -
• Output: -
• Frequency - Max: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

PI6LC4840ZHEX

Diodes Incorporated

IC CLOCK GENERATOR 32TQFN

• PLL: Yes
• Main Purpose: Ethernet
• Input: Crystal
• Output: LVCMOS, LVDS
• Number of Circuits: 1
• Ratio - Input:Output: 1:9
• Differential - Input:Output: No/Yes
• Frequency - Max: 125MHz
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-TQFN (5x5)

Paquete: 32-WFQFN Exposed Pad

ZLNB2003Q16TC

Diodes Incorporated

MUX DUAL DUAL H/V TONE SW 16QSOP

• Function: Multiplex Controller
• Frequency: -
• RF Type: LNB, DiSEqC? , STBs
• Secondary Attributes: With Dual Tone and Polarity Switch
• Package / Case: 16-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 16-QSOP

Paquete: 16-SSOP (0.154", 3.90mm Width)

PT7A7611S-13

Diodes Incorporated

RESET GENERATOR SO-8

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Push-Pull, Totem Pole
• Reset: Active Low
• Reset Timeout: 140ms Minimum
• Voltage - Threshold: 4.63V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

SBR20U60CT-G

Diodes Incorporated

DIODE ARR SBR 60V 20A TO220-3

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Super Barrier
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io) (per Diode): 20A
• Voltage - Forward (Vf) (Max) @ If: 710 mV @ 20 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Operating Temperature - Junction: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220-3

Paquete: -

Request a Quote

BZT52C4V3-7-G

Diodes Incorporated

DIODE ZENER

• Voltage - Zener (Nom) (Vz): -
• Tolerance: -
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

Request a Quote

DMN2009UFDF-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V U-DFN2020-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1083 pF @ 10 V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 9mOhm @ 8.5A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type F)
• Package / Case: 6-UDFN Exposed Pad

Paquete: -

Request a Quote