Vishay Siliconix Productos

2N5546JTXL01

Vishay Siliconix

JFET N-CH 50V TO-71

• FET Type: -
• Voltage - Breakdown (V(BR)GSS): -
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): -
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Resistance - RDS(On): -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-71-6
• Supplier Device Package: TO-71

Paquete: TO-71-6

2N4860JTXV02

Vishay Siliconix

JFET N-CH 30V TO-206

• FET Type: -
• Voltage - Breakdown (V(BR)GSS): -
• Drain to Source Voltage (Vdss): -
• Current - Drain (Idss) @ Vds (Vgs=0): -
• Current Drain (Id) - Max: -
• Voltage - Cutoff (VGS off) @ Id: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Resistance - RDS(On): -
• Power - Max: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-206AA, TO-18-3 Metal Can
• Supplier Device Package: TO-206AA (TO-18)

Paquete: TO-206AA, TO-18-3 Metal Can

2N6660JTXP02

Vishay Siliconix

MOSFET N-CH 60V 0.99A TO-205

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 990mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 725mW (Ta), 6.25W (Tc)
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-205AF (TO-39)
• Package / Case: TO-205AD, TO-39-3 Metal Can

Paquete: TO-205AD, TO-39-3 Metal Can

SI3473DV-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 5.9A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 5.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 33nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.9A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paquete: SOT-23-6 Thin, TSOT-23-6

IRLIZ14G

Vishay Siliconix

MOSFET N-CH 60V 8A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 27W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.8A, 5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paquete: TO-220-3 Full Pack, Isolated Tab

IRFIBC30G

Vishay Siliconix

MOSFET N-CH 600V 2.5A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 Ohm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paquete: TO-220-3 Full Pack, Isolated Tab

IRF9530STRL

Vishay Siliconix

MOSFET P-CH 100V 12A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
• Rds On (Max) @ Id, Vgs: 300 mOhm @ 7.2A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFI840G

Vishay Siliconix

MOSFET N-CH 500V 4.6A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 2.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paquete: TO-220-3 Full Pack, Isolated Tab

SIHB16N50C-E3

Vishay Siliconix

MOSFET N-CH 500V 16A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK (TO-263)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF9Z20

Vishay Siliconix

MOSFET P-CH 50V 9.7A TO-220AB

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paquete: TO-220-3

IRFZ14STRLPBF

Vishay Siliconix

MOSFET N-CH 60V 10A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI1471DH-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 2.7A SC-70-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 445pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-6 (SOT-363)
• Package / Case: 6-TSSOP, SC-88, SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363

SI3460DDV-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 7.9A 6-TSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 7.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 666pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.7W (Ta), 2.7W (Tc)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 5.1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paquete: SOT-23-6 Thin, TSOT-23-6

SIR846ADP-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 60A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.4W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

Paquete: PowerPAK? SO-8

SI3443BDV-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 3.6A 6-TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 4.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paquete: SOT-23-6 Thin, TSOT-23-6

SIA950DJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 190V 0.95A SC-70-6

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 190V
• Current - Continuous Drain (Id) @ 25°C: 950mA
• Rds On (Max) @ Id, Vgs: 3.8 Ohm @ 360mA, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 100V
• Power - Max: 7W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? SC-70-6 Dual
• Supplier Device Package: PowerPAK? SC-70-6 Dual

Paquete: PowerPAK? SC-70-6 Dual

SIZ340DT-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 30A SOT-23

• FET Type: 2 N-Channel (Half Bridge)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 30A, 40A
• Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15.6A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 15V
• Power - Max: 16.7W, 31W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-PowerWDFN
• Supplier Device Package: 8-Power33 (3x3)

Paquete: 8-PowerWDFN

SI5997DU-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 30V 6A PPAK CHIPFET

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A
• Rds On (Max) @ Id, Vgs: 54 mOhm @ 3A, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 430pF @ 15V
• Power - Max: 10.4W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? ChipFET? Dual
• Supplier Device Package: PowerPAK? ChipFet Dual

Paquete: PowerPAK? ChipFET? Dual

SI4936ADY-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 4.4A 8-SOIC

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 4.4A
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

SI91871DMP-50-E3

Vishay Siliconix

IC REG LINEAR 5V 300MA MLP33-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.415V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 150µA ~ 275µA
• PSRR: 60dB ~ 30dB (1kHz ~ 100kHz)
• Control Features: Enable
• Protection Features: Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? MLP33-5
• Supplier Device Package: PowerPAK? MLP33-5

Paquete: PowerPAK? MLP33-5

DG418DJ

Vishay Siliconix

IC ANALOG SWITCH CMOS 8DIP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 1
• On-State Resistance (Max): 35 Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±15V
• Switch Time (Ton, Toff) (Max): 175ns, 145ns
• -3db Bandwidth: -
• Charge Injection: 60pC
• Channel Capacitance (CS(off), CD(off)): 8pF, 8pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

Paquete: 8-DIP (0.300", 7.62mm)

DG611DJ-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16-DIP

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 45 Ohm
• Channel-to-Channel Matching (ΔRon): 2 Ohm
• Voltage - Supply, Single (V+): 10 V ~ 18 V
• Voltage - Supply, Dual (V±): ±10 V ~ 15 V
• Switch Time (Ton, Toff) (Max): 35ns, 25ns
• -3db Bandwidth: 500MHz
• Charge Injection: 4pC
• Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -87dB @ 5MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-DIP (0.300", 7.62mm)
• Supplier Device Package: 16-PDIP

Paquete: 16-DIP (0.300", 7.62mm)

DG406DJ-E3

Vishay Siliconix

IC MUX CMOS ANLG DUAL 8CH 28-DIP

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 16:1
• Number of Circuits: 1
• On-State Resistance (Max): 100 Ohm
• Channel-to-Channel Matching (ΔRon): 5 Ohm
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 200ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 15pC
• Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 28-DIP (0.600", 15.24mm)
• Supplier Device Package: 28-PDIP

Paquete: 28-DIP (0.600", 15.24mm)

DG406DW

Vishay Siliconix

IC MULTIPLEXER 16X1 28SOIC

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 16:1
• Number of Circuits: 1
• On-State Resistance (Max): 100 Ohm
• Channel-to-Channel Matching (ΔRon): 5 Ohm
• Voltage - Supply, Single (V+): 12V
• Voltage - Supply, Dual (V±): ±5 V ~ 20 V
• Switch Time (Ton, Toff) (Max): 200ns, 150ns
• -3db Bandwidth: -
• Charge Injection: 15pC
• Channel Capacitance (CS(off), CD(off)): 8pF, 130pF
• Current - Leakage (IS(off)) (Max): 500pA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 28-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 28-SOIC

Paquete: 28-SOIC (0.295", 7.50mm Width)

SIHP15N60E-BE3

Vishay Siliconix

N-CHANNEL 600V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 180W (Tc)
• Rds On (Max) @ Id, Vgs: 280mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paquete: -

SI2365EDS-T1-BE3

Vishay Siliconix

P-CHANNEL 20-V (D-S) MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
• Rds On (Max) @ Id, Vgs: 32mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: -

SQ4435EY-T1_GE3

Vishay Siliconix

MOSFET P-CHANNEL 30V 15A 8SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.8W (Tc)
• Rds On (Max) @ Id, Vgs: 18mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: -

IRFBF30PBF-BE3

Vishay Siliconix

MOSFET N-CH 900V 3.6A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900 V
• Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 3.7Ohm @ 2.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paquete: -

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