Vishay Siliconix Productos

SI4684DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 16A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2080pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 4.45W (Tc)
• Rds On (Max) @ Id, Vgs: 9.4 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

SI4654DY-T1-E3

Vishay Siliconix

MOSFET N-CH 25V 28.6A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 28.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3770pF @ 15V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 5.9W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

SI1450DH-T1-GE3

Vishay Siliconix

MOSFET N-CH 8V 4.53A SC70-6

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 8V
• Current - Continuous Drain (Id) @ 25°C: 4.53A (Ta), 6.04A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.05nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 4V
• Vgs (Max): ±5V
• FET Feature: -
• Power Dissipation (Max): 1.56W (Ta), 2.78W (Tc)
• Rds On (Max) @ Id, Vgs: 47 mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-6 (SOT-363)
• Package / Case: 6-TSSOP, SC-88, SOT-363

Paquete: 6-TSSOP, SC-88, SOT-363

SI1304BDL-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 0.9A SC-70-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 15V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 340mW (Ta), 370mW (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 900mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-70-3
• Package / Case: SC-70, SOT-323

Paquete: SC-70, SOT-323

SI4322DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 18A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 5.4W (Tc)
• Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

IRC740PBF

Vishay Siliconix

MOSFET N-CH 400V 10A TO-220-5

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: Current Sensing
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 550 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-5
• Package / Case: TO-220-5

Paquete: TO-220-5

IRFBF20STRRPBF

Vishay Siliconix

MOSFET N-CH 900V 1.7A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 54W (Tc)
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SIE864DF-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 45A POLARPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5.2W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 10-PolarPAK? (U)
• Package / Case: 10-PolarPAK? (U)

Paquete: 10-PolarPAK? (U)

SI4620DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 6A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 7.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 15V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
• Rds On (Max) @ Id, Vgs: 35 mOhm @ 6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

IRFP440PBF

Vishay Siliconix

MOSFET N-CH 500V 8.8A TO-247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 850 mOhm @ 5.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

Paquete: TO-247-3

IRF9Z20PBF

Vishay Siliconix

MOSFET P-CH 50V 9.7A TO-220AB

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paquete: TO-220-3

SI7386DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 7 mOhm @ 19A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

Paquete: PowerPAK? SO-8

IRFR9020PBF

Vishay Siliconix

MOSFET P-CH 50V 9.9A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 280 mOhm @ 5.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFIZ24GPBF

Vishay Siliconix

MOSFET N-CH 60V 14A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 8.4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paquete: TO-220-3 Full Pack, Isolated Tab

SI7904DN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 20V 5.3A 1212-8

• FET Type: 2 N-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5.3A
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 935µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Power - Max: 1.3W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? 1212-8 Dual
• Supplier Device Package: PowerPAK? 1212-8 Dual

Paquete: PowerPAK? 1212-8 Dual

SIA511DJ-T1-GE3

Vishay Siliconix

MOSFET N/P-CH 12V 4.5A SC70-6

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 4.5A
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
• Power - Max: 6.5W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? SC-70-6 Dual
• Supplier Device Package: PowerPAK? SC-70-6 Dual

Paquete: PowerPAK? SC-70-6 Dual

SI91872DMP-18-E3

Vishay Siliconix

IC REG LIN 1.8V POWERPAKMLP33-5

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.57V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 170µA ~ 330µA
• PSRR: 60dB ~ 30dB (1kHz ~ 100kHz)
• Control Features: Enable
• Protection Features: Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: PowerPAK? MLP33-5
• Supplier Device Package: PowerPAK? MLP33-5

Paquete: PowerPAK? MLP33-5

9076401EA

Vishay Siliconix

MOSFET

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: -
• Number of Circuits: -
• On-State Resistance (Max): -
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): -
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): -
• Current - Leakage (IS(off)) (Max): -
• Crosstalk: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

DG9251EN-T1-E4

Vishay Siliconix

IC MUX 8:1 482 OHM 16MINIQFN

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 182 Ohm
• Channel-to-Channel Matching (ΔRon): 3.1 Ohm
• Voltage - Supply, Single (V+): 2.7 V ~ 16 V
• Voltage - Supply, Dual (V±): ±2.7 V ~ 5 V
• Switch Time (Ton, Toff) (Max): 250ns, 125ns
• -3db Bandwidth: 314MHz
• Charge Injection: 4.1pC
• Channel Capacitance (CS(off), CD(off)): 2.7pF, 10.7pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -67dB @ 10MHz
• Operating Temperature: -40°C ~ 125°C (TA)
• Package / Case: 16-WFQFN
• Supplier Device Package: 16-miniQFN (1.8x2.6)

Paquete: 16-WFQFN

DG611DY-T1-E3

Vishay Siliconix

IC SWITCH QUAD SPST 16-SOIC

• Switch Circuit: SPST - NC
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 45 Ohm
• Channel-to-Channel Matching (ΔRon): 2 Ohm
• Voltage - Supply, Single (V+): 10 V ~ 18 V
• Voltage - Supply, Dual (V±): ±10 V ~ 15 V
• Switch Time (Ton, Toff) (Max): 35ns, 25ns
• -3db Bandwidth: 500MHz
• Charge Injection: 4pC
• Channel Capacitance (CS(off), CD(off)): 3pF, 2pF
• Current - Leakage (IS(off)) (Max): 250pA
• Crosstalk: -87dB @ 5MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

DG9051DQ-T1-E3

Vishay Siliconix

IC MULTIPLEXER 8X1 16TSSOP

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: 8:1
• Number of Circuits: 1
• On-State Resistance (Max): 40 Ohm
• Channel-to-Channel Matching (ΔRon): 5 Ohm (Max)
• Voltage - Supply, Single (V+): 2.7 V ~ 12 V
• Voltage - Supply, Dual (V±): ±2.7 V ~ 6 V
• Switch Time (Ton, Toff) (Max): 35ns, 30ns
• -3db Bandwidth: -
• Charge Injection: 38pC
• Channel Capacitance (CS(off), CD(off)): 4pF, 8pF
• Current - Leakage (IS(off)) (Max): 1nA
• Crosstalk: -83dB @ 1MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 16-TSSOP

Paquete: 16-TSSOP (0.173", 4.40mm Width)

DG2523DN-T1-GE4

Vishay Siliconix

IC SWITCH DUAL SPDT 16QFN

• Switch Circuit: -
• Multiplexer/Demultiplexer Circuit: -
• Number of Circuits: -
• On-State Resistance (Max): -
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): -
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): -
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): -
• Current - Leakage (IS(off)) (Max): -
• Crosstalk: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

SQD40031EL_GE3

Vishay Siliconix

MOSFET P-CH 30V 100A TO252AA

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -

SIDR668DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 100V 23.2A/95A PPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 23.2A (Ta), 95A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 6.25W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8DC
• Package / Case: PowerPAK® SO-8

Paquete: -

SI3473DDV-T1-GE3

Vishay Siliconix

MOSFET P-CHANNEL 12V 8A 6TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 6 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 3.6W (Tc)
• Rds On (Max) @ Id, Vgs: 17.8mOhm @ 8.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

Paquete: -

SQP100N04-3M6_GE3

Vishay Siliconix

MOSFET N-CH 40V 100A TO220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paquete: -

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SIHA11N80E-GE3

Vishay Siliconix

MOSFET N-CH 800V 12A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 100 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 34W (Tc)
• Rds On (Max) @ Id, Vgs: 440mOhm @ 5.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220 Full Pack
• Package / Case: TO-220-3 Full Pack

Paquete: -

SIA413ADJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 12A PPAK SC70-6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12 V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 8 V
• Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 19W (Tc)
• Rds On (Max) @ Id, Vgs: 29mOhm @ 6.7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SC-70-6 Single
• Package / Case: PowerPAK® SC-70-6

Paquete: -