Toshiba Semiconductor and Storage Productos

2SK2376(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3350pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 17 mOhm @ 25A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FL
• Package / Case: TO-220-3, Short Tab

Paquete: TO-220-3, Short Tab

T2N7002BK,LM

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 0.4A SOT23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 320mW (Ta)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

TPH14006NH,L1Q

Toshiba Semiconductor and Storage

MOSFET N CH 60V 14A 8-SOP ADV

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
• Vgs(th) (Max) @ Id: 4V @ 200µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 32W (Tc)
• Rds On (Max) @ Id, Vgs: 14 mOhm @ 7A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

Paquete: 8-PowerVDFN

SSM6L35FE,LM

Toshiba Semiconductor and Storage

MOSFET N/P-CH 20V 0.18A/0.1A ES6

• FET Type: N and P-Channel
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 180mA, 100mA
• Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 3V
• Power - Max: 150mW
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6 (1.6x1.6)

Paquete: SOT-563, SOT-666

TCR2LN18,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 200MA 4-SDFN

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.6V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

Paquete: 4-XFDFN Exposed Pad

TA78L15F(TE12L,F)

Toshiba Semiconductor and Storage

IC REG LINEAR 15V 150MA PW-MINI

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 35V
• Voltage - Output (Min/Fixed): 15V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 6mA ~ 6.5mA
• PSRR: 40dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: PW-MINI (SOT-89)

Paquete: TO-243AA

TCK107G,LF

Toshiba Semiconductor and Storage

IC POWER DIST LOAD SWITCH 4WCSP

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 1.1 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1A
• Rds On (Typ): 49 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Slew Rate Controlled
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 4-UFBGA
• Supplier Device Package: 4-WCSP (0.79x0.79)

Paquete: 4-UFBGA

74VHC540FT(BE)

Toshiba Semiconductor and Storage

IC INVERTER 8-INPUT 20TSSOP

• Logic Type: Buffer, Inverting
• Number of Elements: 1
• Number of Bits per Element: 8
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 8mA, 8mA
• Voltage - Supply: 2 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 20-TSSOP

Paquete: 20-TSSOP (0.173", 4.40mm Width)

DF2S6M4CT,L3F

Toshiba Semiconductor and Storage

ESD DIODE BI-DIRECTIONAL

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 5.5V (Max)
• Voltage - Breakdown (Min): 5.6V
• Voltage - Clamping (Max) @ Ipp: 15V
• Current - Peak Pulse (10/1000µs): 2A (8/20µs)
• Power - Peak Pulse: 30W
• Power Line Protection: No
• Applications: -
• Capacitance @ Frequency: 0.35pF @ 1MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: CST2

Paquete: SOD-882

TLP3407S(TP,E

Toshiba Semiconductor and Storage

PHOTORELAY 1A 60V S-VSON4

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 300 mOhm
• Load Current: 1A
• Voltage - Input: 1.26VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.079", 2.00mm)
• Supplier Device Package: S-VSON4
• Relay Type: Relay

Paquete: 4-SMD (0.079", 2.00mm)

TLP3420(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 100MA 100V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 14 Ohm
• Load Current: 100mA
• Voltage - Input: 1.27VDC
• Voltage - Load: 0 ~ 100 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.096", 2.45mm)
• Supplier Device Package: 4-VSON
• Relay Type: Relay

Paquete: 4-SMD (0.096", 2.45mm)

TLP293-4(V4-GB,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

• Number of Channels: 4
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 600% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

Paquete: 16-SOIC (0.179", 4.55mm Width)

TLP5751(D4,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRVR SO6L

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 35kV/µs
• Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
• Pulse Width Distortion (Max): 50ns
• Rise / Fall Time (Typ): 15ns, 8ns
• Current - Output High, Low: 1A, 1A
• Current - Peak Output: 1A
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 15 V ~ 30 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 6-SO
• Approvals: CQC, CSA, cUL, UL, VDE

Paquete: 6-SOIC (0.295", 7.50mm Width)

TLP5752(D4-TP,E

Toshiba Semiconductor and Storage

OPTOISO 5KV GATE DRVR SO6L

• Technology: Optical Coupling
• Number of Channels: 1
• Voltage - Isolation: 5000Vrms
• Common Mode Transient Immunity (Min): 35kV/µs
• Propagation Delay tpLH / tpHL (Max): 150ns, 150ns
• Pulse Width Distortion (Max): 50ns
• Rise / Fall Time (Typ): 15ns, 8ns
• Current - Output High, Low: 2.5A, 2.5A
• Current - Peak Output: 2.5A
• Voltage - Forward (Vf) (Typ): 1.55V
• Current - DC Forward (If) (Max): 20mA
• Voltage - Supply: 15 V ~ 30 V
• Operating Temperature: -40°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 6-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 6-SO
• Approvals: CQC, CSA, cUL, UL, VDE

Paquete: 6-SOIC (0.295", 7.50mm Width)

RN1310-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SC70

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

Paquete: -

RN4902-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYM) PN

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): 10kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: -

CRZ12-TE85L-Q-M

Toshiba Semiconductor and Storage

DIODE ZENER 12V 700MW SFLAT

• Voltage - Zener (Nom) (Vz): 12 V
• Tolerance: ±10%
• Power - Max: 700 mW
• Impedance (Max) (Zzt): 30 Ohms
• Current - Reverse Leakage @ Vr: 10 µA @ 8 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: S-FLAT (1.6x3.5)

Paquete: -

TTC011B-Q

Toshiba Semiconductor and Storage

PB-FPOWERTRANSISTORTO-126NPC=10W

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 230 V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 200nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
• Power - Max: 1.5 W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-225AA, TO-126-3
• Supplier Device Package: TO-126N

Paquete: -

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TMPM3HQFDAFG

Toshiba Semiconductor and Storage

MCU,M3,120MHZ,512KBMEM/66KBRAM,Q

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 120MHz
• Connectivity: I2C, SPI, UART/USART
• Peripherals: DMA, LVD, Motor Control PWM, POR, WDT
• Number of I/O: 135
• Program Memory Size: 512KB (512K x 8)
• Program Memory Type: FLASH
• EEPROM Size: 32K x 8
• RAM Size: 64K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 21x12b SAR; D/A 2x8b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: 144-LQFP
• Supplier Device Package: 144-LQFP (20x20)

Paquete: -

TDTA143Z-LM

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 320 mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: -

RN2301-LXHF

Toshiba Semiconductor and Storage

TRANS PREBIAS PNP 50V 0.1A SC70

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 4.7 kOhms
• Resistor - Emitter Base (R2) (Ohms): 4.7 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SC-70

Paquete: -

SSM6L820R-LF

Toshiba Semiconductor and Storage

MOSFET N/P-CH 30V/20V 4A 6TSOPF

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V, 20V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Rds On (Max) @ Id, Vgs: 39.1mOhm @ 2A, 4.5V, 45mOhm @ 3.5A, 10V
• Vgs(th) (Max) @ Id: 1V @ 1mA, 1.2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, 6.7nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 15V, 480pF @ 10V
• Power - Max: 1.4W (Ta)
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD, Flat Leads
• Supplier Device Package: 6-TSOP-F

Paquete: -

7UL1T00FU-LF

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP USV

• Logic Type: NAND Gate
• Number of Circuits: 1
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 2.3V ~ 3.6V
• Current - Quiescent (Max): 1 µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 2V ~ 2.48V
• Logic Level - High: 0.1V ~ 0.4V
• Max Propagation Delay @ V, Max CL: 3.3ns @ 3.3V, 15pF
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

Paquete: -

TW060N120C-S1F

Toshiba Semiconductor and Storage

G3 1200V SIC-MOSFET TO-247 60MO

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5V @ 4.2mA
• Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 800 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 170W (Tc)
• Rds On (Max) @ Id, Vgs: 78mOhm @ 18A, 18V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paquete: -

TK190U65Z-RQ

Toshiba Semiconductor and Storage

DTMOS VI TOLL PD=130W F=1MHZ

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 610µA
• Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 130W (Tc)
• Rds On (Max) @ Id, Vgs: 190mOhm @ 7.5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: TOLL
• Package / Case: 8-PowerSFN

Paquete: -

RN1105-LXHF-CT

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A SSM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 2.2 kOhms
• Resistor - Emitter Base (R2) (Ohms): 47 kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250 MHz
• Power - Max: 100 mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

Paquete: -

TRS24N65FB-S1F-S

Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOT 650V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io) (per Diode): 12A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 90 µA @ 650 V
• Operating Temperature - Junction: 175°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paquete: -

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TK25S06N1L-LXHQ

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 25A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 855 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 57W (Tc)
• Rds On (Max) @ Id, Vgs: 36.8mOhm @ 12.5A, 4.5V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -