Toshiba Semiconductor and Storage Productos

2SD2206,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 2A 100V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 100V
• Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

2SC2235-Y,T6USNF(M

Toshiba Semiconductor and Storage

TRANS NPN 800MA 120V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 800mA
• Voltage - Collector Emitter Breakdown (Max): 120V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
• Power - Max: 900mW
• Frequency - Transition: 120MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

RN1111ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 80mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: -
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

Paquete: SC-101, SOT-883

RN1906FE(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paquete: SOT-563, SOT-666

DSR01S30SC,L3F

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 100MA SC2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 620mV @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 700µA @ 30V
• Capacitance @ Vr, F: 8.2pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: 2-SMD, No Lead
• Supplier Device Package: SC2
• Operating Temperature - Junction: 125°C (Max)

Paquete: 2-SMD, No Lead

HN1D01FU,LF

Toshiba Semiconductor and Storage

DIODE ARRAY GP 80V 100MA US6

• Diode Configuration: 2 Pair Common Anode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: 6-TSSOP, SC-88, SOT-363

TA78L018AP,F(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

Paquete: TO-226-3, TO-92-3 Long Body

TA78L006AP,WNLF(J

Toshiba Semiconductor and Storage

IC REG LINEAR 150MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 150mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: LSTM

Paquete: TO-226-3, TO-92-3 Long Body

TCR2LE12,LM(CT

Toshiba Semiconductor and Storage

IC REG LINEAR 1.2V 200MA ESV

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 200mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 2µA
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

Paquete: SOT-553

TB6600FG

Toshiba Semiconductor and Storage

IC MOTOR DRIVER SER 64HQFP

• Motor Type - Stepper: Bipolar
• Motor Type - AC, DC: -
• Function: Driver - Fully Integrated, Control and Power Stage
• Output Configuration: Half Bridge (4)
• Interface: Parallel
• Technology: Power MOSFET
• Step Resolution: 1, 1/2, 1/4, 1/8, 1/16
• Applications: General Purpose
• Current - Output: 4A
• Voltage - Supply: 8 V ~ 42 V
• Voltage - Load: 8 V ~ 42 V
• Operating Temperature: -30°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TQFP Exposed Pad
• Supplier Device Package: 64-HQFP

Paquete: 64-TQFP Exposed Pad

TC58NVG2S0HTAI0

Toshiba Semiconductor and Storage

IC EEPROM 4GBIT 25NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

Paquete: 48-TFSOP (0.724", 18.40mm Width)

TC7SHU04FU,LJ(CT

Toshiba Semiconductor and Storage

IC INVERTER UNBUFFER HS 5SSOP

• Logic Type: Inverter
• Number of Circuits: 1
• Number of Inputs: 1
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: 0.3V
• Logic Level - High: 1.7V
• Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: USV
• Package / Case: 5-TSSOP, SC-70-5, SOT-353

Paquete: 5-TSSOP, SC-70-5, SOT-353

TC7SZ34FE,LJ(CT

Toshiba Semiconductor and Storage

IC BUFFER UHS SGL ESV

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 1
• Number of Bits per Element: 1
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 32mA, 32mA
• Voltage - Supply: 1.65 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-553
• Supplier Device Package: ESV

Paquete: SOT-553

TC75S58F,LF

Toshiba Semiconductor and Storage

IC COMP SNGL GP OD CMOS SMV

• Type: General Purpose
• Number of Elements: 1
• Output Type: Open Drain
• Voltage - Supply, Single/Dual (±): 1.8 V ~ 7 V, ±0.9 V ~ 3.5 V
• Voltage - Input Offset (Max): 7mV @ 5V
• Current - Input Bias (Max): 1pA @ 5V
• Current - Output (Typ): 25mA
• Current - Quiescent (Max): 20µA
• CMRR, PSRR (Typ): -
• Propagation Delay (Max): 800ns
• Hysteresis: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: SC-74A, SOT-753
• Mounting Type: Surface Mount
• Supplier Device Package: SMV

Paquete: SC-74A, SOT-753

TC7USB42MU,LF

Toshiba Semiconductor and Storage

IC USB SWITCH SPDT DUAL 10UQFN

• Applications: USB
• Multiplexer/Demultiplexer Circuit: 2:1
• Switch Circuit: SPDT
• Number of Channels: 2
• On-State Resistance (Max): 14 Ohm
• Voltage - Supply, Single (V+): 2.3 V ~ 4.3 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 1.5GHz
• Features: USB 2.0
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 10-UFQFN
• Supplier Device Package: 10-UQFN (1.8x1.4)

Paquete: 10-UFQFN

TL2FL-LW1,L

Toshiba Semiconductor and Storage

LED LETERAS WARM WHT 3000K 2SMD

• Color: White, Warm
• CCT (K): 3000K
• Flux @ 85°C, Current - Test: -
• Flux @ 25°C, Current - Test: 21 lm (19 lm ~ 22 lm)
• Current - Test: 65mA
• Voltage - Forward (Vf) (Typ): 2.82V
• Lumens/Watt @ Current - Test: 115 lm/W
• CRI (Color Rendering Index): 80
• Current - Max: 100mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Package / Case: 1206 (3014 Metric)
• Supplier Device Package: 3014
• Size / Dimension: 0.118" L x 0.055" W (3.00mm x 1.40mm)
• Height - Seated (Max): 0.030" (0.77mm)

Paquete: 1206 (3014 Metric)

TLEGF1108(T11(O

Toshiba Semiconductor and Storage

LED GREEN 4SMD

• Color: Green
• Configuration: -
• Lens Color: -
• Lens Transparency: -
• Millicandela Rating: 2000mcd
• Lens Style/Size: Oval with Flat Top
• Voltage - Forward (Vf) (Typ): 3.5V
• Current - Test: 40mA
• Viewing Angle: -
• Mounting Type: Surface Mount
• Wavelength - Dominant: 528nm
• Wavelength - Peak: 518nm
• Features: -
• Package / Case: 4-SMD, J-Lead
• Supplier Device Package: -
• Size / Dimension: 3.20mm L x 2.90mm W
• Height (Max): 2.10mm

Paquete: 4-SMD, J-Lead

TLP3250(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY 20V 0.2A 4-SSOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 5 Ohm
• Load Current: 200mA
• Voltage - Input: 1.3VDC
• Voltage - Load: 0 ~ 20 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.165", 4.20mm)
• Supplier Device Package: 4-SSOP
• Relay Type: Relay

Paquete: 4-SMD (0.165", 4.20mm)

TLP290(GR-TP,SE

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS 4-SO

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 5mA
• Current Transfer Ratio (Max): 300% @ 5mA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: AC, DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 110°C
• Mounting Type: Surface Mount
• Package / Case: 4-SOIC (0.179", 4.55mm)
• Supplier Device Package: 4-SO

Paquete: 4-SOIC (0.179", 4.55mm)

TC7WBL3306CFK,L(CT

Toshiba Semiconductor and Storage

IC SWITCH SPST DUAL US8

• Switch Circuit: SPST
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 2
• On-State Resistance (Max): 19Ohm
• Channel-to-Channel Matching (ΔRon): -
• Voltage - Supply, Single (V+): 1.65V ~ 3.6V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 6ns, 6ns
• -3db Bandwidth: -
• Charge Injection: -
• Channel Capacitance (CS(off), CD(off)): 3.5pF
• Current - Leakage (IS(off)) (Max): 1µA
• Crosstalk: -
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-VFSOP (0.091", 2.30mm Width)
• Supplier Device Package: US8

Paquete: 8-VFSOP (0.091", 2.30mm Width)

TCR3DG135,LF

Toshiba Semiconductor and Storage

300MA LDO VOUT=1.35V DROPOUT=195

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.35V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.53V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: 70dB (1kHz)
• Control Features: Enable
• Protection Features: Inrush Current, Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFBGA, CSPBGA
• Supplier Device Package: 4-WCSPE (0.65x0.65)

Paquete: 4-XFBGA, CSPBGA

HN1A01FU-Y-LXHF

Toshiba Semiconductor and Storage

AUTO AEC-Q PNP + PNP TR VCEO:-50

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 150mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
• Power - Max: 200mW
• Frequency - Transition: 80MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: US6

Paquete: -

RN1131MFV-L3F

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 50V 0.1A VESM

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100 mA
• Voltage - Collector Emitter Breakdown (Max): 50 V
• Resistor - Base (R1) (Ohms): 100 kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: -
• Power - Max: 150 mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: VESM

Paquete: -

TK40J20D-S1F-O

Toshiba Semiconductor and Storage

MOSFET N-CH 200V 40A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 260W (Tc)
• Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)
• Package / Case: TO-3P-3, SC-65-3

Paquete: -

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RN4908FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paquete: -

TTC502-LF-B

Toshiba Semiconductor and Storage

TRANSISTOR FOR LF SMALL-SIGNAL A

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 1 A
• Voltage - Collector Emitter Breakdown (Max): 120 V
• Vce Saturation (Max) @ Ib, Ic: 140mV @ 10mA, 300mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 2V
• Power - Max: 1 W
• Frequency - Transition: -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3 Flat Leads
• Supplier Device Package: SOT-23F

Paquete: -

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TCR3DM13-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.55V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

Paquete: -

TCR3DM33-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.23V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

Paquete: -