|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 7.5A SOP8 2-6J1B
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 27 mOhm @ 3.8A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOP (5.5x6.0)
- Package / Case: 8-SOIC (0.173", 4.40mm Width)
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias7.248 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.1A DPAK-0S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 450µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 100W (Tc)
- Rds On (Max) @ Id, Vgs: 440 mOhm @ 5.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DPAK
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias238.692 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 23A 8TSON-ADV
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.3V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 22W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 11.5A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
|
Paquete: 8-PowerVDFN |
En existencias47.772 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 40A 8TSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 200µA
- Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 40V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 700mW (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs: 13.3 mOhm @ 9A, 10V
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-TSON Advance (3.3x3.3)
- Package / Case: 8-PowerVDFN
|
Paquete: 8-PowerVDFN |
En existencias51.828 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 2A 50V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
- Power - Max: 900mW
- Frequency - Transition: 100MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Paquete: TO-226-3, TO-92-3 Long Body |
En existencias6.080 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 50MA 150V TO226-3
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50mA
- Voltage - Collector Emitter Breakdown (Max): 150V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
- Power - Max: 800mW
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 Long Body
- Supplier Device Package: TO-92MOD
|
Paquete: TO-226-3, TO-92-3 Long Body |
En existencias4.384 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS NPN 50V 5A PW-MOLD
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 5A
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 150mA, 3A
- Current - Collector Cutoff (Max): 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V
- Power - Max: 1W
- Frequency - Transition: 120MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias7.808 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 500MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: LSTM
|
Paquete: TO-220-3 Full Pack |
En existencias2.480 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 500MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: LSTM
|
Paquete: TO-220-3 Full Pack |
En existencias7.728 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 250MA LSTM
- Output Configuration: -
- Output Type: -
- Number of Regulators: 1
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 250mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -40°C ~ 105°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3 Full Pack
- Supplier Device Package: LSTM
|
Paquete: TO-220-3 Full Pack |
En existencias4.080 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 3.3V 500MA PW-MOLD
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 29V
- Voltage - Output (Min/Fixed): 3.3V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.65V @ 500mA
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 1.4mA ~ 25mA
- PSRR: 70dB (120Hz)
- Control Features: -
- Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PW-MOLD
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias5.616 |
|
|
|
Toshiba Semiconductor and Storage |
IC REG LINEAR 3.1V 200MA 4-SDFN
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 3.1V
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: 200mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 60µA
- PSRR: 73dB (1kHz)
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
|
Paquete: 4-XFDFN Exposed Pad |
En existencias130.704 |
|
|
|
Toshiba Semiconductor and Storage |
IC GATE NAND QUAD 2 IN 14SOIC
- Logic Type: NAND Gate
- Number of Circuits: 4
- Number of Inputs: 2
- Features: Open Drain
- Voltage - Supply: 2 V ~ 6 V
- Current - Quiescent (Max): 1µA
- Current - Output High, Low: -, 5.2mA
- Logic Level - Low: 0.5 V ~ 1.8 V
- Logic Level - High: 1.5 V ~ 4.2 V
- Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Supplier Device Package: 14-SOIC
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
|
Paquete: 14-SOIC (0.154", 3.90mm Width) |
En existencias20.610 |
|
|
|
Toshiba Semiconductor and Storage |
IC BUFF/DVR NON-INVERT 6SSOP
- Logic Type: Buffer, Non-Inverting
- Number of Elements: 2
- Number of Bits per Element: 1
- Input Type: -
- Output Type: Open Drain
- Current - Output High, Low: -, 32mA
- Voltage - Supply: 1.65 V ~ 5.5 V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: US6
|
Paquete: 6-TSSOP, SC-88, SOT-363 |
En existencias25.314 |
|
|
|
Toshiba Semiconductor and Storage |
IC MUX/DEMUX DUAL 1X1 8SOP
- Applications: -
- Multiplexer/Demultiplexer Circuit: -
- Switch Circuit: -
- Number of Channels: 2
- On-State Resistance (Max): 160 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 18 V
- Voltage - Supply, Dual (V±): -
- -3db Bandwidth: -
- Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
- Supplier Device Package: 8-SSOP
|
Paquete: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) |
En existencias3.280 |
|
|
|
Toshiba Semiconductor and Storage |
IC MUX/DEMUX QUAD 1:2 20TQFN
- Applications: PCIe
- Multiplexer/Demultiplexer Circuit: 2:1
- Switch Circuit: SPDT
- Number of Channels: 4
- On-State Resistance (Max): 13.5 Ohm
- Voltage - Supply, Single (V+): 3 V ~ 3.6 V
- Voltage - Supply, Dual (V±): -
- -3db Bandwidth: 11.5GHz
- Features: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Package / Case: 20-UFQFN Exposed Pad
- Supplier Device Package: 20-TQFN (2.5x4.5)
|
Paquete: 20-UFQFN Exposed Pad |
En existencias47.208 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISOLATOR 3.75KV TRANS SO16
- Number of Channels: 4
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): 50% @ 500µA
- Current Transfer Ratio (Max): 600% @ 500µA
- Turn On / Turn Off Time (Typ): 3µs, 3µs
- Rise / Fall Time (Typ): 2µs, 3µs
- Input Type: DC
- Output Type: Transistor
- Voltage - Output (Max): 80V
- Current - Output / Channel: 50mA
- Voltage - Forward (Vf) (Typ): 1.25V
- Current - DC Forward (If) (Max): 50mA
- Vce Saturation (Max): 300mV
- Operating Temperature: -55°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.179", 4.55mm Width)
- Supplier Device Package: 16-SO
|
Paquete: 16-SOIC (0.179", 4.55mm Width) |
En existencias7.956 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISO 3.75KV PHVOLT SO6
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Current Transfer Ratio (Min): -
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 200µs, 300µs
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Photovoltaic
- Voltage - Output (Max): 7V
- Current - Output / Channel: 12µA
- Voltage - Forward (Vf) (Typ): 1.65V
- Current - DC Forward (If) (Max): 30mA
- Vce Saturation (Max): -
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.173", 4.40mm Width) 4 Leads
- Supplier Device Package: 6-SO, 4 Lead
|
Paquete: 6-SOIC (0.173", 4.40mm Width) 4 Leads |
En existencias52.440 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISO 3.75KV PSH PULL 8SOIC
- Number of Channels: 1
- Inputs - Side 1/Side 2: 1/0
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 15kV/µs
- Input Type: DC
- Output Type: Push-Pull, Totem Pole
- Current - Output / Channel: 25mA
- Data Rate: 5Mbps
- Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
- Rise / Fall Time (Typ): 30ns, 30ns
- Voltage - Forward (Vf) (Typ): 1.57V
- Current - DC Forward (If) (Max): 25mA
- Voltage - Supply: 4.5 V ~ 20 V
- Operating Temperature: -40°C ~ 100°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias4.410 |
|
|
|
Toshiba Semiconductor and Storage |
OPTOISO 3.75KV GATE DRIVER 6SO-5
- Technology: Optical Coupling
- Number of Channels: 1
- Voltage - Isolation: 3750Vrms
- Common Mode Transient Immunity (Min): 20kV/µs
- Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
- Pulse Width Distortion (Max): 350ns
- Rise / Fall Time (Typ): 50ns, 50ns
- Current - Output High, Low: 400mA, 400mA
- Current - Peak Output: 600mA
- Voltage - Forward (Vf) (Typ): 1.55V
- Current - DC Forward (If) (Max): 25mA
- Voltage - Supply: 10 V ~ 30 V
- Operating Temperature: -40°C ~ 110°C
- Mounting Type: Surface Mount
- Package / Case: 6-SOIC (0.179", 4.55mm Width) 5 Leads
- Supplier Device Package: 6-SO, 5 Lead
- Approvals: cUL, UL
|
Paquete: 6-SOIC (0.179", 4.55mm Width) 5 Leads |
En existencias7.452 |
|
|
|
Toshiba Semiconductor and Storage |
200MA LDO VOUT2.7V DROPOUT180MV
- Output Configuration: -
- Output Type: -
- Number of Regulators: -
- Voltage - Input (Max): -
- Voltage - Output (Min/Fixed): -
- Voltage - Output (Max): -
- Voltage Dropout (Max): -
- Current - Output: -
- Current - Quiescent (Iq): -
- Current - Supply (Max): -
- PSRR: -
- Control Features: -
- Protection Features: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
|
Paquete: - |
En existencias2.448 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS NPN 50V 0.1A VESM
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 47 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: VESM
|
Paquete: - |
En existencias71.556 |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A SOT23F
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 12.8 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 10 V
- Vgs (Max): +6V, -8V
- FET Feature: -
- Power Dissipation (Max): 1W (Ta)
- Rds On (Max) @ Id, Vgs: 29.8mOhm @ 3A, 4.5V
- Operating Temperature: 150°C
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23F
- Package / Case: SOT-23-3 Flat Leads
|
Paquete: - |
En existencias42.024 |
|
|
|
Toshiba Semiconductor and Storage |
TRANS PREBIAS PNP 50V SMINI
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1) (Ohms): 22 kOhms
- Resistor - Emitter Base (R2) (Ohms): 47 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 200 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
|
Paquete: - |
En existencias18.000 |
|
|
|
Toshiba Semiconductor and Storage |
LDO REG VOUT=1.5V I=200MA
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 1.11V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 2 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
|
Paquete: - |
En existencias29.184 |
|
|
|
Toshiba Semiconductor and Storage |
30V, 3-PHASE BRUSHLESS DC (BLDC)
- Motor Type - Stepper: Multiphase
- Motor Type - AC, DC: Brushless DC (BLDC)
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver - High Side/Low Side
- Interface: I2C, PWM
- Technology: NMOS
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 240mA
- Voltage - Supply: 5.5V ~ 27V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 36-WFQFN Exposed Pad
- Supplier Device Package: 36-WQFN (5x5)
|
Paquete: - |
En existencias41.226 |
|
|
|
Toshiba Semiconductor and Storage |
LDO REG VOUT=1.5V IOUT=200MA
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 5.5V
- Voltage - Output (Min/Fixed): 1.15V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.65V @ 150mA
- Current - Output: 200mA
- Current - Quiescent (Iq): 60 µA
- Current - Supply (Max): -
- PSRR: -
- Control Features: Enable
- Protection Features: Over Current
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 4-XFDFN Exposed Pad
- Supplier Device Package: 4-SDFN (0.8x0.8)
|
Paquete: - |
En existencias30.000 |
|
|
|
Toshiba Semiconductor and Storage |
IC INVERTER TRIPLE 8-SSOP
- Logic Type: Inverter
- Number of Circuits: 3
- Number of Inputs: 1
- Features: -
- Voltage - Supply: 2V ~ 5.5V
- Current - Quiescent (Max): 2 µA
- Current - Output High, Low: 8mA, 8mA
- Logic Level - Low: 0.3V
- Logic Level - High: 1.7V
- Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SSOP
- Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
|
Paquete: - |
Request a Quote |
|