Toshiba Semiconductor and Storage Productos

GT50J121(Q)

Toshiba Semiconductor and Storage

IGBT 600V 50A 240W TO3P LH

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 50A
• Power - Max: 240W
• Switching Energy: 1.3mJ (on), 1.34mJ (off)
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 90ns/300ns
• Test Condition: 300V, 50A, 13 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3PL
• Supplier Device Package: TO-3P(LH)

Paquete: TO-3PL

TJ8S06M3L(T6L1,NQ)

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 8A DPAK-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 10V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 27W (Tc)
• Rds On (Max) @ Id, Vgs: 104 mOhm @ 4A, 10V
• Operating Temperature: 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

TK8Q65W,S1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 7.8A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 570pF @ 300V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 670 mOhm @ 3.9A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Stub Leads, IPak

Paquete: TO-251-3 Stub Leads, IPak

TK22E10N1,S1X

Toshiba Semiconductor and Storage

MOSFET N CH 100V 52A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 72W (Tc)
• Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 11A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

Paquete: TO-220-3

TPH1110FNH,L1Q

Toshiba Semiconductor and Storage

MOSFET N-CH 250V 15A 8-SOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 300µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.6W (Ta), 57W (Tc)
• Rds On (Max) @ Id, Vgs: 112 mOhm @ 5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP Advance (5x5)
• Package / Case: 8-PowerVDFN

Paquete: 8-PowerVDFN

SSM6K403TU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.2A

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 16.8nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 10V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 28 mOhm @ 3A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UF6
• Package / Case: 6-SMD, Flat Leads

Paquete: 6-SMD, Flat Leads

SSM3J120TU,LF

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 4A UFM

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 22.3nC @ 4V
• Input Capacitance (Ciss) (Max) @ Vds: 1484pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 500mW (Ta)
• Rds On (Max) @ Id, Vgs: 38 mOhm @ 3A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: UFM
• Package / Case: 3-SMD, Flat Leads

Paquete: 3-SMD, Flat Leads

2SA1020A,NSEIKIF(J

Toshiba Semiconductor and Storage

TRANS PNP 2A 50V TO226-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

RN1109ACT(TPL3)

Toshiba Semiconductor and Storage

TRANS PREBIAS NPN 0.1W CST3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 80mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SC-101, SOT-883
• Supplier Device Package: CST3

Paquete: SC-101, SOT-883

RN1902FE,LF(CT

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.1W ES6

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 1k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paquete: SOT-563, SOT-666

CLH06(TE16R,Q)

Toshiba Semiconductor and Storage

DIODE GEN PURP 300V 5A L-FLAT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: L-FLAT?
• Supplier Device Package: L-FLAT? (4x5.5)
• Operating Temperature - Junction: -

Paquete: L-FLAT?

TB62777FG,EL

Toshiba Semiconductor and Storage

IC LED DRIVER DISPLAY 16SSOP

• Type: Linear
• Topology: Shift Register
• Internal Switch(s): Yes
• Number of Outputs: 8
• Voltage - Supply (Min): 3V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 25V
• Current - Output / Channel: 40mA
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOP (0.181", 4.60mm Width)
• Supplier Device Package: 16-SSOP

Paquete: 16-SOP (0.181", 4.60mm Width)

TPS850

Toshiba Semiconductor and Storage

IC PHOTO LINEAR-OUT

• Type: Ambient
• Wavelength: 640nm
• Proximity Detection: No
• Output Type: Current
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -30°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 1210 (3225 Metric) (4 Leads)
• Supplier Device Package: -

Paquete: 1210 (3225 Metric) (4 Leads)

TCS11DLU(TE85L,F)

Toshiba Semiconductor and Storage

MAGNETIC SWITCH OMNIPOLAR UFV

• Function: Omnipolar Switch
• Technology: Hall Effect
• Polarization: Either
• Sensing Range: ±2.5mT Trip, ±0.3mT Release
• Test Condition: 25°C
• Voltage - Supply: 2.3 V ~ 3.6 V
• Current - Supply (Max): 1.3mA
• Current - Output (Max): 5mA
• Output Type: Open Drain
• Features: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 6-SMD (5 Leads), Flat Lead
• Supplier Device Package: UFV

Paquete: 6-SMD (5 Leads), Flat Lead

TLP3127(TP,F

Toshiba Semiconductor and Storage

PHOTORELAY SPST-NO 1.3A 60V

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): -
• Load Current: 1.3A
• Voltage - Input: 1.33VDC
• Voltage - Load: 0 ~ 60 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 4-SOP (0.173", 4.40mm)
• Supplier Device Package: 4-SOP (2.54mm)
• Relay Type: Relay

Paquete: 4-SOP (0.173", 4.40mm)

TLP293-4(LA,E

Toshiba Semiconductor and Storage

OPTOISOLATOR 3.75KV TRANS SO16

• Number of Channels: 4
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 50% @ 500µA
• Current Transfer Ratio (Max): 600% @ 500µA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.179", 4.55mm Width)
• Supplier Device Package: 16-SO

Paquete: 16-SOIC (0.179", 4.55mm Width)

TBD62789APG

Toshiba Semiconductor and Storage

TRANSISTOR ARRAY INTERFACE DRIVE

• Switch Type: -
• Number of Outputs: -
• Ratio - Input:Output: -
• Output Configuration: -
• Output Type: -
• Interface: -
• Voltage - Load: -
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: -
• Operating Temperature: -
• Package / Case: 20-DIP (0.300", 7.62mm)
• Supplier Device Package: 20-DIP

Paquete: 20-DIP (0.300", 7.62mm)

TCR15AG18,LF

Toshiba Semiconductor and Storage

IC REG LINEAR 1.8V 1.5A 6WCSP

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 6V
• Voltage - Output (Min/Fixed): 1.8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.648V @ 1.5A
• Current - Output: 1.5A
• Current - Quiescent (Iq): 40µA
• Current - Supply (Max): -
• PSRR: 95dB ~ 60dB (1kHz)
• Control Features: Enable
• Protection Features: Current Limit, Thermal Shutdown, UVLO
• Operating Temperature: -40°C ~ 85°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFBGA, WLCSP
• Supplier Device Package: 6-WCSP (1.2x0.80)

Paquete: 6-XFBGA, WLCSP

TMPM037FWUG(KY,JZ)

Toshiba Semiconductor and Storage

TX FAMILY MCU

• Core Processor: ARM® Cortex®-M0
• Core Size: 32-Bit
• Speed: 20MHz
• Connectivity: I²C, SIO, UART/USART
• Peripherals: DMA, LVD, POR, WDT
• Number of I/O: 51
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7 V ~ 3.6 V
• Data Converters: A/D 8x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (10x10)

Paquete: 64-LQFP

BAV70-LM

Toshiba Semiconductor and Storage

DIODE ARRAY GP 100V 215MA SOT23

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 215mA
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 4 ns
• Current - Reverse Leakage @ Vr: 200 nA @ 80 V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

Paquete: -

RN4904FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 47kOhms
• Resistor - Emitter Base (R2) (Ohms): 47kOhms
• DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paquete: -

TK750A60F-S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 10A TO220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1130 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

Paquete: -

TJ20S04M3L-LXHQ

Toshiba Semiconductor and Storage

MOSFET P-CH 40V 20A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 10 V
• Vgs (Max): +10V, -20V
• FET Feature: -
• Power Dissipation (Max): 41W (Tc)
• Rds On (Max) @ Id, Vgs: 22.2mOhm @ 10A, 10V
• Operating Temperature: 175°C
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK+
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -

CMS20I30A-TE12L-QM

Toshiba Semiconductor and Storage

DIODE SCHOTTKY 30V 2A M-FLAT

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 30 V
• Capacitance @ Vr, F: 82pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: M-FLAT (2.4x3.8)
• Operating Temperature - Junction: 150°C (Max)

Paquete: -

SSM3J375F-LXHF

Toshiba Semiconductor and Storage

AECQ MOSFET PCH -20V -2A SOT346

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 270 pF @ 10 V
• Vgs (Max): +6V, -8V
• FET Feature: -
• Power Dissipation (Max): 600mW (Ta)
• Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
• Operating Temperature: 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: S-Mini
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: -

TC9592XBG-EL

Toshiba Semiconductor and Storage

IC BRIDGE 49VFBGA

• Type: Bridge
• Applications: -
• Mounting Type: Surface Mount
• Package / Case: 49-VFBGA
• Supplier Device Package: 49-VFBGA (5x5)

Paquete: -

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TCR3UM12A-LF-SE

Toshiba Semiconductor and Storage

LDO REG IOUT: 300MA VIN: 6V VOUT

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.857V @ 300mA
• Current - Output: 300mA
• Current - Quiescent (Iq): 580 nA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Current Limit, Enable
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-UDFN Exposed Pad
• Supplier Device Package: 4-DFN (1x1)

Paquete: -

1SS422-TE85L-F

Toshiba Semiconductor and Storage

DIODE ARR SCHOTT 30V 100MA SSM

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 30 V
• Current - Average Rectified (Io) (per Diode): 100mA
• Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 30 V
• Operating Temperature - Junction: 125°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: SSM

Paquete: -