Toshiba Semiconductor and Storage Productos

TK12P60W,RVQ

Toshiba Semiconductor and Storage

MOSFET N CH 600V 11.5A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 600µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 890pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 100W (Tc)
• Rds On (Max) @ Id, Vgs: 340 mOhm @ 5.8A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

SSM3K7002BSU,LF

Toshiba Semiconductor and Storage

MOSFET N-CH 60V .2A USM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3.1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150mW (Ta)
• Rds On (Max) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: USM
• Package / Case: SC-70, SOT-323

Paquete: SC-70, SOT-323

TK100A10N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 100A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 8800pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 50A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack, Isolated Tab

Paquete: TO-220-3 Full Pack, Isolated Tab

2SC4682,T6F(J

Toshiba Semiconductor and Storage

TRANS NPN 3A 15V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 15V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 30mA, 3A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 800 @ 500mA, 1V
• Power - Max: 900mW
• Frequency - Transition: 150MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

2SC2655-Y(T6ND2,AF

Toshiba Semiconductor and Storage

TRANS NPN 2A 50V TO226-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 2A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
• Power - Max: 900mW
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92MOD

Paquete: TO-226-3, TO-92-3 Long Body

1SS193,LF

Toshiba Semiconductor and Storage

DIODE GEN PURP 80V 100MA SMINI

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 80V
• Current - Average Rectified (Io): 100mA
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 4ns
• Current - Reverse Leakage @ Vr: 500nA @ 80V
• Capacitance @ Vr, F: 3pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: S-Mini
• Operating Temperature - Junction: 125°C (Max)

Paquete: TO-236-3, SC-59, SOT-23-3

TA58M06S,SUMISQ(M

Toshiba Semiconductor and Storage

IC REG LINEAR 500MA LSTM

• Output Configuration: -
• Output Type: -
• Number of Regulators: 1
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: LSTM

Paquete: TO-220-3 Full Pack

TA58M08F(TE16L1,NQ

Toshiba Semiconductor and Storage

IC REG LINEAR 8V 500MA PW-MOLD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 29V
• Voltage - Output (Min/Fixed): 8V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.65V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1mA ~ 80mA
• PSRR: -
• Control Features: -
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

TA48M025F(T6L1,SNQ

Toshiba Semiconductor and Storage

IC REG LINEAR 2.5V 500MA PW-MOLD

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 29V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.65V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 1.4mA ~ 25mA
• PSRR: 72dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Over Voltage, Reverse Polarity
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PW-MOLD

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

TBD62783AFNG

Toshiba Semiconductor and Storage

IC LOAD SWITCH 18SSOP

• Switch Type: General Purpose
• Number of Outputs: 8
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 50V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 500mA
• Rds On (Typ): -
• Input Type: Non-Inverting
• Features: -
• Fault Protection: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 18-LSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 18-SSOP

Paquete: 18-LSSOP (0.173", 4.40mm Width)

TC62D776CFG,EL

Toshiba Semiconductor and Storage

IC LED DRIVER LINEAR 90MA 24SSOP

• Type: Linear
• Topology: Shift Register
• Internal Switch(s): Yes
• Number of Outputs: 16
• Voltage - Supply (Min): 3V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 17V
• Current - Output / Channel: 90mA
• Frequency: -
• Dimming: -
• Applications: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: -
• Supplier Device Package: 24-SSOP

Paquete: -

TH58NVG3S0HTAI0

Toshiba Semiconductor and Storage

IC EEPROM 8GBIT 25NS 48TSOP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM - NAND
• Memory Size: 8Gb (1G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 25ns
• Access Time: 25ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

Paquete: 48-TFSOP (0.724", 18.40mm Width)

TC74VHC04FK(EL,K)

Toshiba Semiconductor and Storage

IC INVERTER HEX 14VSSOP

• Logic Type: Inverter
• Number of Circuits: 6
• Number of Inputs: 6
• Features: -
• Voltage - Supply: 2 V ~ 5.5 V
• Current - Quiescent (Max): 2µA
• Current - Output High, Low: 8mA, 8mA
• Logic Level - Low: -
• Logic Level - High: -
• Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-VSSOP, US14
• Package / Case: 14-VFSOP (0.118", 3.00mm Width)

Paquete: 14-VFSOP (0.118", 3.00mm Width)

TC74LCX244F(EL,K,F

Toshiba Semiconductor and Storage

IC BUFF/DVR DUAL LV 20SOP

• Logic Type: Buffer, Non-Inverting
• Number of Elements: 2
• Number of Bits per Element: 4
• Input Type: -
• Output Type: Push-Pull
• Current - Output High, Low: 24mA, 24mA
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 20-SOP

Paquete: 20-SOIC (0.209", 5.30mm Width)

DF5A3.3F(TE85L,F)

Toshiba Semiconductor and Storage

TVS DIODE 1VWM SMV

• Type: Zener
• Unidirectional Channels: 4
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 1V
• Voltage - Breakdown (Min): 3.1V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 115pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SMV

Paquete: SC-74A, SOT-753

DF3A6.2FUTE85LF

Toshiba Semiconductor and Storage

TVS DIODE 3VWM USM

• Type: Zener
• Unidirectional Channels: 2
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 3V
• Voltage - Breakdown (Min): 5.8V
• Voltage - Clamping (Max) @ Ipp: -
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: -
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 55pF @ 1MHz
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: USM

Paquete: SC-70, SOT-323

TLP4192G(F)

Toshiba Semiconductor and Storage

PHOTORELAY 350V DUAL 6SOP

• Circuit: SPST-NC (1 Form B)
• Output Type: AC, DC
• On-State Resistance (Max): 50 Ohm
• Load Current: 90mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 350 V
• Mounting Type: Surface Mount
• Termination Style: Gull Wing
• Package / Case: 6-SOP (0.173", 4.40mm)
• Supplier Device Package: 6-SOP (2.54mm)
• Relay Type: Relay

Paquete: 6-SOP (0.173", 4.40mm)

TLP3217(TP15,F)

Toshiba Semiconductor and Storage

PHOTORELAY MOSFET OUT 5MA 4-SSOP

• Circuit: SPST-NO (1 Form A)
• Output Type: AC, DC
• On-State Resistance (Max): 12 Ohm
• Load Current: 120mA
• Voltage - Input: 1.15VDC
• Voltage - Load: 0 ~ 80 V
• Mounting Type: Surface Mount
• Termination Style: SMD (SMT) Tab
• Package / Case: 4-SMD (0.165", 4.20mm)
• Supplier Device Package: 4-SSOP
• Relay Type: Relay

Paquete: 4-SMD (0.165", 4.20mm)

TLP183(GRL-TPL,E

Toshiba Semiconductor and Storage

OPTOISO 3.75KV TRANS 6-SO 4 LEAD

• Number of Channels: 1
• Voltage - Isolation: 3750Vrms
• Current Transfer Ratio (Min): 100% @ 500µA
• Current Transfer Ratio (Max): 200% @ 500µA
• Turn On / Turn Off Time (Typ): 3µs, 3µs
• Rise / Fall Time (Typ): 2µs, 3µs
• Input Type: DC
• Output Type: Transistor
• Voltage - Output (Max): 80V
• Current - Output / Channel: 50mA
• Voltage - Forward (Vf) (Typ): 1.25V
• Current - DC Forward (If) (Max): 50mA
• Vce Saturation (Max): 300mV
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 6-SMD (4 Leads), Gull Wing
• Supplier Device Package: 6-SO, 4 Lead

Paquete: 6-SMD (4 Leads), Gull Wing

TC74LCX32FT-EL

Toshiba Semiconductor and Storage

IC GATE OR 4CH 2-INP 14-TSSOP

• Logic Type: OR Gate
• Number of Circuits: 4
• Number of Inputs: 2
• Features: -
• Voltage - Supply: 1.65V ~ 3.6V
• Current - Quiescent (Max): 10 µA
• Current - Output High, Low: 24mA, 24mA
• Logic Level - Low: 0.8V
• Logic Level - High: 2V
• Max Propagation Delay @ V, Max CL: 5.5ns @ 3.3V, 50pF
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Supplier Device Package: 14-TSSOP
• Package / Case: 14-TSSOP (0.173", 4.40mm Width)

Paquete: -

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TPD7107F-BXH

Toshiba Semiconductor and Storage

IPD MOSFET IC WSON10 PD=1.84W VD

• Driven Configuration: High-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 5.75V ~ 26V
• Logic Voltage - VIL, VIH: 0.6V, 2.4V
• Current - Peak Output (Source, Sink): 5mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 10-WFDFN Exposed Pad
• Supplier Device Package: 10-WSON (3x3)

Paquete: -

RN4911FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q 2-IN-1 (POINT-SYMMETR

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 200MHz, 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paquete: -

TK110A65Z-S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 24A TO220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1.02mA
• Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 300 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 45W (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 12A, 10V
• Operating Temperature: 150°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

Paquete: -

RN1911FE-LF-CT

Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=10KOHM Q1BER=I

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paquete: -

RN4991FE-LF-CT

Toshiba Semiconductor and Storage

NPN + PNP BRT Q1BSR10KOHM Q1BERI

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10kOhms
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 250MHz, 200MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: ES6

Paquete: -

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TW083N65C-S1F

Toshiba Semiconductor and Storage

G3 650V SIC-MOSFET TO-247 83MOH

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 18V
• Vgs(th) (Max) @ Id: 5V @ 600µA
• Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds: 873 pF @ 400 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 111W (Tc)
• Rds On (Max) @ Id, Vgs: 113mOhm @ 15A, 18V
• Operating Temperature: 175°C
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paquete: -

TRS20N65FB-S1F-S

Toshiba Semiconductor and Storage

DIODE ARR SIC SCHOT 650V TO247

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io) (per Diode): 10A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 90 µA @ 650 V
• Operating Temperature - Junction: 175°C (Max)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paquete: -

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TCR2EN12-LF-SE

Toshiba Semiconductor and Storage

LDO REG VOUT=1.2V IOUT=200MA

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 5.5V
• Voltage - Output (Min/Fixed): 1.2V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.55V @ 150mA
• Current - Output: 200mA
• Current - Quiescent (Iq): 60 µA
• Current - Supply (Max): -
• PSRR: -
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 4-XFDFN Exposed Pad
• Supplier Device Package: 4-SDFN (0.8x0.8)

Paquete: -