Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 16A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias6.496 |
|
MOSFET (Metal Oxide) | 30V | 16A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 34nC @ 10V | 1970pF @ 10V | ±20V | - | 1W (Ta) | 5.6 mOhm @ 8A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 10A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias5.136 |
|
MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.8V, 4.5V | 1.2V @ 200µA | 115nC @ 5V | 9130pF @ 10V | ±8V | - | 1W (Ta) | 10 mOhm @ 5A, 4.5V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias3.216 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4V, 10V | 2V @ 1mA | 107nC @ 10V | 4500pF @ 10V | ±20V | - | 1W (Ta) | 10 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 11A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias2.384 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4V, 10V | 2V @ 1mA | 107nC @ 10V | 5710pF @ 10V | ±20V | - | 1W (Ta) | 12 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 8A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias6.640 |
|
MOSFET (Metal Oxide) | 40V | 8A (Ta) | 4V, 10V | 2V @ 1mA | 48nC @ 10V | 2180pF @ 10V | ±20V | - | 1W (Ta) | 25 mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 12A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias6.944 |
|
MOSFET (Metal Oxide) | 30V | 12A (Ta) | - | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | - | - | - | 11.4 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 17A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias3.344 |
|
MOSFET (Metal Oxide) | 30V | 17A (Ta) | - | 2.5V @ 1mA | 42nC @ 10V | 3713pF @ 10V | - | - | - | 5.3 mOhm @ 8.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 15A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias6.064 |
|
MOSFET (Metal Oxide) | 30V | 15A (Ta) | - | 2.5V @ 1mA | 33nC @ 10V | 2846pF @ 10V | - | - | - | 6.5 mOhm @ 7.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias7.392 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | - | 2.5V @ 1mA | 21nC @ 10V | 2150pF @ 10V | - | - | - | 13.3 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 7.5A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias7.248 |
|
MOSFET (Metal Oxide) | 40V | 7.5A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 11nC @ 10V | 650pF @ 10V | ±20V | - | 1W (Ta) | 27 mOhm @ 3.8A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias4.880 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 11nC @ 10V | 640pF @ 10V | ±20V | - | 1W (Ta) | 17 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 18A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias7.216 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 38nC @ 10V | 2265pF @ 10V | ±20V | - | 1W (Ta) | 4.6 mOhm @ 9A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 11A SOP8 2-6J1B
|
Paquete: 8-SOIC (0.173", 4.40mm Width) |
En existencias3.376 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 39nC @ 10V | 1860pF @ 10V | ±20V | - | 1W (Ta) | 14 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP (5.5x6.0) | 8-SOIC (0.173", 4.40mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.5A VS6 2-3T1A
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias360.000 |
|
MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2V, 4.5V | 1.2V @ 200µA | 9.8nC @ 5V | 680pF @ 10V | ±12V | - | 700mW (Ta) | 55 mOhm @ 2.2A, 4.5V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 4.5A VS6 2-3T1A
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias19.200 |
|
MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.8V, 4.5V | 1.2V @ 200µA | 19nC @ 5V | 1430pF @ 10V | ±8V | - | 700mW (Ta) | 40 mOhm @ 2.8A, 4.5V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 3.9A VS6 2-3T1A
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias3.712 |
|
MOSFET (Metal Oxide) | 40V | 3.9A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 4.4nC @ 10V | 251pF @ 10V | ±20V | - | 700mW (Ta) | 75 mOhm @ 1.9A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A TO220W
|
Paquete: TO-220-3 |
En existencias2.768 |
|
MOSFET (Metal Oxide) | 60V | 70A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 87nC @ 10V | 5450pF @ 10V | ±20V | - | 45W (Tc) | 6.4 mOhm @ 35A, 10V | 150°C (TJ) | Through Hole | TO-220(W) | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 75V 60A TO220W
|
Paquete: TO-220-3 |
En existencias4.736 |
|
MOSFET (Metal Oxide) | 75V | 60A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 86nC @ 10V | 5450pF @ 10V | ±20V | - | 140W (Tc) | 7.8 mOhm @ 30A, 10V | 150°C (TJ) | Through Hole | TO-220(W) | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 55A TO220W
|
Paquete: TO-220-3 |
En existencias2.544 |
|
MOSFET (Metal Oxide) | 100V | 55A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 110nC @ 10V | 5700pF @ 10V | ±20V | - | 140W (Tc) | 10.5 mOhm @ 27A, 10V | 150°C (TJ) | Through Hole | TO-220(W) | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 10A TO220SM
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias6.240 |
|
MOSFET (Metal Oxide) | 450V | 10A (Ta) | 10V | 5V @ 1mA | 23nC @ 10V | 920pF @ 10V | ±30V | - | 65W (Tc) | 650 mOhm @ 5A, 10V | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 10A TO220FL
|
Paquete: TO-220-3, Short Tab |
En existencias6.224 |
|
MOSFET (Metal Oxide) | 450V | 10A (Ta) | 10V | 5V @ 1mA | 23nC @ 10V | 920pF @ 10V | ±30V | - | 65W (Tc) | 650 mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3, Short Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220FL
|
Paquete: TO-220-3, Short Tab |
En existencias7.504 |
|
MOSFET (Metal Oxide) | 60V | 45A (Ta) | 4V, 10V | 2V @ 1mA | 110nC @ 10V | 3350pF @ 10V | ±20V | - | 100W (Tc) | 17 mOhm @ 25A, 10V | 150°C (TJ) | Through Hole | TO-220FL | TO-220-3, Short Tab |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 45A TO220SM
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias2.384 |
|
MOSFET (Metal Oxide) | 60V | 45A (Ta) | 4V, 10V | 2V @ 1mA | 60nC @ 10V | 1800pF @ 10V | ±20V | - | 65W (Tc) | 30 mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 5A VS-6
|
Paquete: SOT-23-6 Thin, TSOT-23-6 |
En existencias3.536 |
|
MOSFET (Metal Oxide) | 30V | 5A (Ta) | 4.5V, 10V | 1.2V @ 200µA | 12.3nC @ 10V | 490pF @ 10V | ±20V | - | 700mW (Ta) | 59 mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | VS-6 (2.9x2.8) | SOT-23-6 Thin, TSOT-23-6 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 900V 5A TO-220SIS
|
Paquete: TO-220-3 Full Pack |
En existencias5.120 |
|
MOSFET (Metal Oxide) | 900V | 5A (Ta) | 10V | 4V @ 1mA | 28nC @ 10V | 1150pF @ 25V | ±30V | - | 45W (Tc) | 2.5 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 50A TO-3P(L)
|
Paquete: TO-3PL |
En existencias6.496 |
|
MOSFET (Metal Oxide) | 500V | 50A (Ta) | 10V | 3.4V @ 1mA | 280nC @ 10V | 11000pF @ 10V | ±30V | - | 250W (Tc) | 95 mOhm @ 25A, 10V | 150°C (TJ) | Through Hole | TO-3P(L) | TO-3PL |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 45A TO220SM
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias6.832 |
|
MOSFET (Metal Oxide) | 30V | 45A (Ta) | 10V | 3V @ 1mA | 66nC @ 10V | 2300pF @ 10V | ±20V | - | 65W (Tc) | 12 mOhm @ 25A, 10V | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12A TO220SM
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias15.324 |
|
MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | ±30V | - | 100W (Tc) | 520 mOhm @ 6A, 10V | 150°C (TJ) | Surface Mount | TO-220SM | TO-252-3, DPak (2 Leads + Tab), SC-63 |