Taiwan Semiconductor Corporation Productos

2M62ZHR0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 62V, 2000MW, %, AE

• Voltage - Zener (Nom) (Vz): 62V
• Tolerance: ±5%
• Power - Max: 2W
• Impedance (Max) (Zzt): 60 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 47.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

Paquete: DO-204AC, DO-15, Axial

BZD27C130PW RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 130V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 130V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD123W

Paquete: SOD-123W

BZD17C200P RVG

Taiwan Semiconductor Corporation

DIODE, ZENER, 200V, 800MW, %, SU

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±6%
• Power - Max: 800mW
• Impedance (Max) (Zzt): 750 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 150V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

Paquete: DO-219AB

BZD27C130P MTG

Taiwan Semiconductor Corporation

DIODE, ZENER, 130V, 1000MW, %, S

• Voltage - Zener (Nom) (Vz): 132.5V
• Tolerance: ±6.41%
• Power - Max: 1W
• Impedance (Max) (Zzt): 300 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Supplier Device Package: Sub SMA

Paquete: DO-219AB

1SMA5951 R3G

Taiwan Semiconductor Corporation

DIODE, ZENER, 120V, 1500MW, 5%,

• Voltage - Zener (Nom) (Vz): 120V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 360 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 91.2V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

Paquete: DO-214AC, SMA

1SMA5943HM2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 56V, 1500MW, 5%, A

• Voltage - Zener (Nom) (Vz): 56V
• Tolerance: ±5%
• Power - Max: 1.5W
• Impedance (Max) (Zzt): 86 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 42.6V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

Paquete: DO-214AC, SMA

1SMA4742 M2G

Taiwan Semiconductor Corporation

DIODE, ZENER, 12V, 1000MW, %, DO

• Voltage - Zener (Nom) (Vz): 12V
• Tolerance: ±5%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 9.1V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)

Paquete: DO-214AC, SMA

1N4731G A0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 4.3V, 1000MW, 5%,

• Voltage - Zener (Nom) (Vz): 4.3V
• Tolerance: ±5%
• Power - Max: 1W
• Impedance (Max) (Zzt): 9 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 200°C (TA)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paquete: DO-204AL, DO-41, Axial

MMSZ5241B RHG

Taiwan Semiconductor Corporation

DIODE, ZENER, 11V, 500MW, 5%, SO

• Voltage - Zener (Nom) (Vz): 11V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 22 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 8.4V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

Paquete: SOD-123F

BZV55C3V0 L0G

Taiwan Semiconductor Corporation

DIODE, ZENER, 3V, 500MW, 5%, MME

• Voltage - Zener (Nom) (Vz): 3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 85 Ohms
• Current - Reverse Leakage @ Vr: 4µA @ 1V
• Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-213AC, MINI-MELF, SOD-80
• Supplier Device Package: Mini MELF

Paquete: DO-213AC, MINI-MELF, SOD-80

TS50P07GHC2G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 50A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
• Current - Reverse Leakage @ Vr: 10µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, TS-6P
• Supplier Device Package: TS-6P

Paquete: 4-SIP, TS-6P

DBL157GHC1G

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1.5A

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1000V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
• Current - Reverse Leakage @ Vr: 2µA @ 1000V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-DIP (0.300", 7.62mm)
• Supplier Device Package: DBL

Paquete: 4-DIP (0.300", 7.62mm)

ABS6HRGG

Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 800mA
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 400mA
• Current - Reverse Leakage @ Vr: 10µA @ 600V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, Gull Wing
• Supplier Device Package: ABS

Paquete: 4-SMD, Gull Wing

GBU605H

Taiwan Semiconductor Corporation

BRIDGE RECT 1PHASE 600V 6A GBU

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 600 V
• Current - Average Rectified (Io): 6 A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 4-SIP, GBU
• Supplier Device Package: GBU

Paquete: -

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2M56ZH

Taiwan Semiconductor Corporation

DIODE ZENER 56V 2W DO204AC

• Voltage - Zener (Nom) (Vz): 56 V
• Tolerance: ±5%
• Power - Max: 2 W
• Impedance (Max) (Zzt): 55 Ohms
• Current - Reverse Leakage @ Vr: 500 nA @ 42.6 V
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)

Paquete: -

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MBRF1045CT-Y

Taiwan Semiconductor Corporation

DIODE ARRAY GP 45V 10A ITO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 45 V
• Current - Average Rectified (Io) (per Diode): 10A
• Voltage - Forward (Vf) (Max) @ If: 880 mV @ 10 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 45 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB

Paquete: -

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MBR25100CT

Taiwan Semiconductor Corporation

DIODE ARR SCHOT 100V 25A TO220AB

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io) (per Diode): 25A
• Voltage - Forward (Vf) (Max) @ If: 920 mV @ 25 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 100 V
• Operating Temperature - Junction: -55°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paquete: -

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TSM9409CS

Taiwan Semiconductor Corporation

-60V, -3.5A, SINGLE P-CHANNEL PO

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta)
• Rds On (Max) @ Id, Vgs: 155mOhm @ 3.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOP
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: -

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TSM055N03EPQ56

Taiwan Semiconductor Corporation

30V, 80A, SINGLE N-CHANNEL POWER

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 74W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-PDFN (5x5.8)
• Package / Case: 8-PowerTDFN

Paquete: -

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TUAS4JH

Taiwan Semiconductor Corporation

4A, 600V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 4A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 4 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5 µA @ 600 V
• Capacitance @ Vr, F: 33pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-277, 3-PowerDFN
• Supplier Device Package: TO-277A (SMPC4.6U)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

TSD2GFSH

Taiwan Semiconductor Corporation

2A, 600V, STANDARD RECOVERY RECT

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 400 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 1 µA @ 400 V
• Capacitance @ Vr, F: 15pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-128
• Supplier Device Package: SOD-128
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: -

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RS2BAH

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1.5A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 150 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 50pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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TSSA3U60

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 3A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 60 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25 ns
• Current - Reverse Leakage @ Vr: 500 µA @ 60 V
• Capacitance @ Vr, F: 610pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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BZY55C36-RBG

Taiwan Semiconductor Corporation

DIODE ZENER 36V 500MW 0805

• Voltage - Zener (Nom) (Vz): 36 V
• Tolerance: ±5%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 80 Ohms
• Current - Reverse Leakage @ Vr: 100 nA @ 27 V
• Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 mA
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 0805 (2012 Metric)
• Supplier Device Package: 0805

Paquete: -

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SF1608PTH

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 16A TO247AD

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 600 V
• Capacitance @ Vr, F: 85pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (TO-3P)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -

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BZT52B10

Taiwan Semiconductor Corporation

SOD-123F, 500MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 10 V
• Tolerance: ±2%
• Power - Max: 500 mW
• Impedance (Max) (Zzt): 20 Ohms
• Current - Reverse Leakage @ Vr: 180 nA @ 7 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F

Paquete: -

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BZT52B6V8S

Taiwan Semiconductor Corporation

SOD-323F, 200MW, 2%, SMALL SIGNA

• Voltage - Zener (Nom) (Vz): 6.8 V
• Tolerance: ±2%
• Power - Max: 200 mW
• Impedance (Max) (Zzt): 15 Ohms
• Current - Reverse Leakage @ Vr: 1.8 µA @ 4 V
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-90, SOD-323F
• Supplier Device Package: SOD-323F

Paquete: -

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HS5DH

Taiwan Semiconductor Corporation

50NS, 5A, 200V, HIGH EFFICIENT R

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 5A
• Voltage - Forward (Vf) (Max) @ If: 1 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 200 V
• Capacitance @ Vr, F: 80pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: -