Microsemi Corporation Productos

APT20M19JVR

Microsemi Corporation

MOSFET N-CH 200V 112A SOT-227

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 112A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 495nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 11640pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: ISOTOP?
• Package / Case: SOT-227-4, miniBLOC

Paquete: SOT-227-4, miniBLOC

APTM100SK33T1G

Microsemi Corporation

MOSFET N-CH 1000V 23A SP1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 23A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 390W (Tc)
• Rds On (Max) @ Id, Vgs: 396 mOhm @ 18A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP1
• Package / Case: SP1

Paquete: SP1

APT26F120L

Microsemi Corporation

MOSFET N-CH 1200V 27A TO-264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1135W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264 [L]
• Package / Case: TO-264-3, TO-264AA

Paquete: TO-264-3, TO-264AA

JAN2N5683

Microsemi Corporation

TRANS NPN 60V 50A TO-3

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 5V @ 10A, 50A
• Current - Collector Cutoff (Max): 5µA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 25A, 2V
• Power - Max: 300W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-204AA, TO-3
• Supplier Device Package: TO-3 (TO-204AA)

Paquete: TO-204AA, TO-3

JANTX2N918UB

Microsemi Corporation

TRANS NPN 15V 0.05A

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 15V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
• Current - Collector Cutoff (Max): 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
• Power - Max: 200mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 4-SMD, No Lead
• Supplier Device Package: UB

Paquete: 4-SMD, No Lead

MS2N4931

Microsemi Corporation

TRANS PNP TO-39

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

MRF581G

Microsemi Corporation

TRANS NPN 18V 200MA MACRO X

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 18V
• Frequency - Transition: 5GHz
• Noise Figure (dB Typ @ f): 3dB ~ 3.5dB @ 500MHz
• Gain: 13dB ~ 15.5dB
• Power - Max: 1.25W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
• Current - Collector (Ic) (Max): 200mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Micro-X ceramic (84C)
• Supplier Device Package: Micro-X ceramic (84C)

Paquete: Micro-X ceramic (84C)

1N5382A/TR12

Microsemi Corporation

DIODE ZENER 140V 5W T18

• Voltage - Zener (Nom) (Vz): 140V
• Tolerance: ±10%
• Power - Max: 5W
• Impedance (Max) (Zzt): 230 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 101V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

Paquete: T-18, Axial

JANTXV1N3019D-1

Microsemi Corporation

DIODE ZENER 9.1V 1W DO41

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±1%
• Power - Max: 1W
• Impedance (Max) (Zzt): 6 Ohms
• Current - Reverse Leakage @ Vr: 25µA @ 6.9V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41

Paquete: DO-204AL, DO-41, Axial

1N3005A

Microsemi Corporation

DIODE ZENER 100V 10W DO213AA

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±5%
• Power - Max: 10W
• Impedance (Max) (Zzt): 40 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 2A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-203AA, DO-4, Stud
• Supplier Device Package: DO-213AA

Paquete: DO-203AA, DO-4, Stud

JAN1N982C-1

Microsemi Corporation

DIODE ZENER 75V 500MW DO35

• Voltage - Zener (Nom) (Vz): 75V
• Tolerance: ±2%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 270 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 56V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

Paquete: DO-204AH, DO-35, Axial

1PMT5956C/TR13

Microsemi Corporation

DIODE ZENER 200V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 200V
• Tolerance: ±2%
• Power - Max: 3W
• Impedance (Max) (Zzt): 1200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 152V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

Paquete: DO-216AA

1PMT5952/TR7

Microsemi Corporation

DIODE ZENER 130V 3W DO216AA

• Voltage - Zener (Nom) (Vz): 130V
• Tolerance: ±20%
• Power - Max: 3W
• Impedance (Max) (Zzt): 450 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 98.8V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216AA

Paquete: DO-216AA

3EZ68D5E3/TR12

Microsemi Corporation

DIODE ZENER 68V 3W DO204AL

• Voltage - Zener (Nom) (Vz): 68V
• Tolerance: ±5%
• Power - Max: 3W
• Impedance (Max) (Zzt): 70 Ohms
• Current - Reverse Leakage @ Vr: 500nA @ 51.7V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paquete: DO-204AL, DO-41, Axial

APTDC10H601G

Microsemi Corporation

RECT BRIDGE 10A 600V SP1

• Diode Type: Single Phase
• Technology: Silicon Carbide Schottky
• Voltage - Peak Reverse (Max): 600V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
• Current - Reverse Leakage @ Vr: 200µA @ 600V
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Supplier Device Package: SP1

Paquete: SP1

SG7815K-883B

Microsemi Corporation

IC REG LINEAR 15V 1.5A TO3

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 35V
• Voltage - Output (Min/Fixed): 15V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 2.5V @ 1A
• Current - Output: 1.5A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 7mA
• PSRR: 60dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -55°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-3P-3, SC-65-3
• Supplier Device Package: TO-3

Paquete: TO-3P-3, SC-65-3

M2S090-FCS325I

Microsemi Corporation

IC FPGA SOC 90K LUTS

• Architecture: MCU, FPGA
• Core Processor: ARM? Cortex?-M3
• Flash Size: 512KB
• RAM Size: 64KB
• Peripherals: DDR, PCIe, SERDES
• Connectivity: CAN, Ethernet, I2C, SPI, UART/USART, USB
• Speed: 166MHz
• Primary Attributes: FPGA - 90K Logic Modules
• Operating Temperature: -40°C ~ 100°C (TJ)
• Package / Case: 325-TFBGA
• Supplier Device Package: 325-BGA (11x11)

Paquete: 325-TFBGA

M2GL090TS-FG484

Microsemi Corporation

IC FPGA 267 I/O 484FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 86184
• Total RAM Bits: 2648064
• Number of I/O: 267
• Number of Gates: -
• Voltage - Supply: 1.14 V ~ 2.625 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 484-BGA
• Supplier Device Package: 484-FPBGA (23x23)

Paquete: 484-BGA

M1A3P1000L-1FGG256

Microsemi Corporation

IC FPGA 177 I/O 256FBGA

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 147456
• Number of I/O: 177
• Number of Gates: 1000000
• Voltage - Supply: 1.14V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: 0°C ~ 85°C (TJ)
• Package / Case: 256-LBGA
• Supplier Device Package: 256-FPBGA (17x17)

Paquete: 256-LBGA

MRT100KP160CAE3

Microsemi Corporation

TVS DIODE 160VWM 315VC CASE5A

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 160V
• Voltage - Breakdown (Min): 178V
• Voltage - Clamping (Max) @ Ipp: 315V
• Current - Peak Pulse (10/1000µs): -
• Power - Peak Pulse: 100000W (100kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: Case 5A (DO-204AR)

Paquete: DO-204AR, Axial

MP6KE36AE3

Microsemi Corporation

TVS DIODE 30.8VWM 49.9VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 30.8V
• Voltage - Breakdown (Min): 34.2V
• Voltage - Clamping (Max) @ Ipp: 49.9V
• Current - Peak Pulse (10/1000µs): 12A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

Paquete: T-18, Axial

MLCE60A

Microsemi Corporation

TVS DIODE 60VWM 96.8VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 60V
• Voltage - Breakdown (Min): 66.7V
• Voltage - Clamping (Max) @ Ipp: 96.8V
• Current - Peak Pulse (10/1000µs): 15.5A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 90pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

Paquete: DO-201AA, DO-27, Axial

MASMCJLCE8.5AE3

Microsemi Corporation

TVS DIODE 8.5VWM 14.4VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 8.5V
• Voltage - Breakdown (Min): 9.44V
• Voltage - Clamping (Max) @ Ipp: 14.4V
• Current - Peak Pulse (10/1000µs): 100A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

Paquete: DO-214AB, SMC

MXLPLAD30KP85CA

Microsemi Corporation

TVS DIODE 85VWM 137VC PLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 85V
• Voltage - Breakdown (Min): 94.4V
• Voltage - Clamping (Max) @ Ipp: 137V
• Current - Peak Pulse (10/1000µs): 216A
• Power - Peak Pulse: 30000W (30kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: PLAD

Paquete: Nonstandard SMD

MX1.5KE47A

Microsemi Corporation

TVS DIODE 40.2VWM 64.8VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 40.2V
• Voltage - Breakdown (Min): 44.7V
• Voltage - Clamping (Max) @ Ipp: 64.8V
• Current - Peak Pulse (10/1000µs): 23.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

Paquete: DO-201AA, DO-27, Axial

MX1.5KE27AE3

Microsemi Corporation

TVS DIODE 23.1VWM 37.5VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 23.1V
• Voltage - Breakdown (Min): 25.7V
• Voltage - Clamping (Max) @ Ipp: 37.5V
• Current - Peak Pulse (10/1000µs): 40A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

Paquete: DO-201AA, DO-27, Axial

1N6038A

Microsemi Corporation

TVS DIODE 7.5VWM 13.4VC DO13

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.65V
• Voltage - Clamping (Max) @ Ipp: 13.4V
• Current - Peak Pulse (10/1000µs): 112A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

Paquete: DO-13

MSMCG14A

Microsemi Corporation

TVS DIODE 14VWM 23.2VC DO215AB

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 14V
• Voltage - Breakdown (Min): 15.6V
• Voltage - Clamping (Max) @ Ipp: 23.2V
• Current - Peak Pulse (10/1000µs): 64.7A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-215AB, SMC Gull Wing
• Supplier Device Package: SMCG (DO-215AB)

Paquete: DO-215AB, SMC Gull Wing