Microsemi Corporation Productos

APTGT200A170D3G

Microsemi Corporation

IGBT MODULE TRENCH PHASE LEG D3

• IGBT Type: Trench Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 400A
• Power - Max: 1250W
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 200A
• Current - Collector Cutoff (Max): 5mA
• Input Capacitance (Cies) @ Vce: 17nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: D-3 Module
• Supplier Device Package: D3

Paquete: D-3 Module

JANTXV2N3421U4

Microsemi Corporation

TRANS NPN 125V 3A

• Transistor Type: -
• Current - Collector (Ic) (Max): -
• Voltage - Collector Emitter Breakdown (Max): -
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: -
• Frequency - Transition: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

JAN2N3250A

Microsemi Corporation

TRANS PNP 60V 0.2A TO-39

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
• Power - Max: 360mW
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39 (TO-205AD)

Paquete: TO-205AD, TO-39-3 Metal Can

JAN2N2919L

Microsemi Corporation

TRANS 2NPN 60V 0.03A TO78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 30mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
• Current - Collector Cutoff (Max): 10µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
• Power - Max: 350mW
• Frequency - Transition: -
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

Paquete: TO-78-6 Metal Can

JANTX1N4972DUS

Microsemi Corporation

DIODE ZENER 39V 5W D5B

• Voltage - Zener (Nom) (Vz): 39V
• Tolerance: ±1%
• Power - Max: 5W
• Impedance (Max) (Zzt): 14 Ohms
• Current - Reverse Leakage @ Vr: 2µA @ 29.7V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B

Paquete: SQ-MELF, E

JANTX1N4956DUS

Microsemi Corporation

DIODE ZENER 8.2V 5W D5B

• Voltage - Zener (Nom) (Vz): 8.2V
• Tolerance: ±1%
• Power - Max: 5W
• Impedance (Max) (Zzt): 1.5 Ohms
• Current - Reverse Leakage @ Vr: 50µA @ 6.2V
• Voltage - Forward (Vf) (Max) @ If: 1.5V @ 1A
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, E
• Supplier Device Package: D-5B

Paquete: SQ-MELF, E

1N5935A G

Microsemi Corporation

DIODE ZENER 27V 1.25W DO204AL

• Voltage - Zener (Nom) (Vz): 27V
• Tolerance: ±10%
• Power - Max: 1.25W
• Impedance (Max) (Zzt): 23 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 20.6V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-204AL (DO-41)

Paquete: DO-204AL, DO-41, Axial

1N4910A

Microsemi Corporation

DIODE ZENER 12.8V 400MW DO7

• Voltage - Zener (Nom) (Vz): 12.8V
• Tolerance: ±5%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 50 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -55°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

Paquete: DO-204AA, DO-7, Axial

1N4914

Microsemi Corporation

DIODE ZENER 12.8V 400MW DO7

• Voltage - Zener (Nom) (Vz): 12.8V
• Tolerance: ±5%
• Power - Max: 400mW
• Impedance (Max) (Zzt): 25 Ohms
• Current - Reverse Leakage @ Vr: -
• Voltage - Forward (Vf) (Max) @ If: -
• Operating Temperature: -25°C ~ 100°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

Paquete: DO-204AA, DO-7, Axial

JAN1N3044DUR-1

Microsemi Corporation

DIODE ZENER 100V 1W DO213AB

• Voltage - Zener (Nom) (Vz): 100V
• Tolerance: ±1%
• Power - Max: 1W
• Impedance (Max) (Zzt): 350 Ohms
• Current - Reverse Leakage @ Vr: 10µA @ 76V
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 200mA
• Operating Temperature: -55°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB (MELF, LL41)

Paquete: DO-213AB, MELF

JAN1N4132-1

Microsemi Corporation

DIODE ZENER 82V DO35

• Voltage - Zener (Nom) (Vz): 82V
• Tolerance: ±5%
• Power - Max: -
• Impedance (Max) (Zzt): 800 Ohms
• Current - Reverse Leakage @ Vr: 10nA @ 62.4V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AH, DO-35, Axial
• Supplier Device Package: DO-35 (DO-204AH)

Paquete: DO-204AH, DO-35, Axial

1N4620-1

Microsemi Corporation

DIODE ZENER 3.3V 500MW DO7

• Voltage - Zener (Nom) (Vz): 3.3V
• Tolerance: ±5%
• Power - Max: 500mW
• Impedance (Max) (Zzt): 1650 Ohms
• Current - Reverse Leakage @ Vr: 3.5µA @ 1.5V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Through Hole
• Package / Case: DO-204AA, DO-7, Axial
• Supplier Device Package: DO-7

Paquete: DO-204AA, DO-7, Axial

1PMT4103C/TR13

Microsemi Corporation

DIODE ZENER 9.1V 1W DO216

• Voltage - Zener (Nom) (Vz): 9.1V
• Tolerance: ±2%
• Power - Max: 1W
• Impedance (Max) (Zzt): 200 Ohms
• Current - Reverse Leakage @ Vr: 1µA @ 6.92V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: DO-216AA
• Supplier Device Package: DO-216

Paquete: DO-216AA

MBR2090CTE3/TU

Microsemi Corporation

DIODE SCHOTTKY 20A 90V TO220AB

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

Paquete: -

CPT400100D

Microsemi Corporation

DIODE MODULE 100V 200A TO244AB

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io) (per Diode): 200A
• Voltage - Forward (Vf) (Max) @ If: 890mV @ 200A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5mA @ 100V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: TO-244AB
• Supplier Device Package: TO-244AB

Paquete: TO-244AB

LX1664CD

Microsemi Corporation

IC PWM DUAL OUT 5BIT DAC 16SOIC

• Applications: Controller, Intel Pentium? II
• Voltage - Input: 10.8 V ~ 13.2 V
• Number of Outputs: 2
• Voltage - Output: 1.8 V ~ 2.8 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.154", 3.90mm Width)

LX8385-33IP

Microsemi Corporation

IC REG LIN 3.3V 3A TO220/POWER

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 10V
• Voltage - Output (Min/Fixed): 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 1.5V @ 3A
• Current - Output: 3A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 10mA
• PSRR: 83dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature
• Operating Temperature: -25°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220, Power

Paquete: TO-220-3

A3PN125-Z2VQ100

Microsemi Corporation

IC FPGA 71 I/O 100VQFP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: -
• Total RAM Bits: 36864
• Number of I/O: 71
• Number of Gates: 125000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -20°C ~ 85°C (TJ)
• Package / Case: 100-TQFP
• Supplier Device Package: 100-VQFP (14x14)

Paquete: 100-TQFP

AGLN020V5-CSG81

Microsemi Corporation

IC FPGA 52 I/O 81CSP

• Number of LABs/CLBs: -
• Number of Logic Elements/Cells: 520
• Total RAM Bits: -
• Number of I/O: 52
• Number of Gates: 20000
• Voltage - Supply: 1.425 V ~ 1.575 V
• Mounting Type: Surface Mount
• Operating Temperature: -20°C ~ 85°C (TJ)
• Package / Case: 81-WFBGA, CSBGA
• Supplier Device Package: 81-CSP (5x5)

Paquete: 81-WFBGA, CSBGA

MP6KE15A

Microsemi Corporation

TVS DIODE 12.8VWM 21.2VC T18

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 12.8V
• Voltage - Breakdown (Min): 14.3V
• Voltage - Clamping (Max) @ Ipp: 21.2V
• Current - Peak Pulse (10/1000µs): 28A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: T-18, Axial
• Supplier Device Package: T-18

Paquete: T-18, Axial

MA5KP7.5CAE3

Microsemi Corporation

TVS DIODE 7.5VWM 12.9VC DO204AR

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 7.5V
• Voltage - Breakdown (Min): 8.33V
• Voltage - Clamping (Max) @ Ipp: 12.9V
• Current - Peak Pulse (10/1000µs): 388A
• Power - Peak Pulse: 5000W (5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-204AR, Axial
• Supplier Device Package: DO-204AR

Paquete: DO-204AR, Axial

1N6366

Microsemi Corporation

TVS DIODE 10VWM 14.5VC DO13

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 10V
• Voltage - Breakdown (Min): 11.7V
• Voltage - Clamping (Max) @ Ipp: 14.5V
• Current - Peak Pulse (10/1000µs): 90A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-13
• Supplier Device Package: DO-13

Paquete: DO-13

JAN1N6103US

Microsemi Corporation

TVS DIODE 5.7VWM 11.76VC SQMELF

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 5.7V
• Voltage - Breakdown (Min): 6.77V
• Voltage - Clamping (Max) @ Ipp: 11.76V
• Current - Peak Pulse (10/1000µs): 42.37A
• Power - Peak Pulse: 500W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SQ-MELF, B
• Supplier Device Package: B, SQ-MELF

Paquete: SQ-MELF, B

MXLLCE24AE3

Microsemi Corporation

TVS DIODE 24VWM 38.9VC CASE1

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 24V
• Voltage - Breakdown (Min): 26.7V
• Voltage - Clamping (Max) @ Ipp: 38.9V
• Current - Peak Pulse (10/1000µs): 39A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: 100pF @ 1MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: CASE-1

Paquete: DO-201AA, DO-27, Axial

MAPLAD6.5KP17CAE3

Microsemi Corporation

TVS DIODE 17VWM 27.6VC MINIPLAD

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 17V
• Voltage - Breakdown (Min): 18.9V
• Voltage - Clamping (Max) @ Ipp: 27.6V
• Current - Peak Pulse (10/1000µs): 236A
• Power - Peak Pulse: 6500W (6.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Nonstandard SMD
• Supplier Device Package: Mini-PLAD

Paquete: Nonstandard SMD

MASMBJ64CAE3

Microsemi Corporation

TVS DIODE 64VWM 103VC DO214AA

• Type: Zener
• Unidirectional Channels: -
• Bidirectional Channels: 1
• Voltage - Reverse Standoff (Typ): 64V
• Voltage - Breakdown (Min): 71.1V
• Voltage - Clamping (Max) @ Ipp: 103V
• Current - Peak Pulse (10/1000µs): 5.8A
• Power - Peak Pulse: 600W
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: SMBJ (DO-214AA)

Paquete: DO-214AA, SMB

SMCJ6066AE3/TR13

Microsemi Corporation

TVS DIODE 110VWM 182VC SMCJ

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 110V
• Voltage - Breakdown (Min): 124V
• Voltage - Clamping (Max) @ Ipp: 182V
• Current - Peak Pulse (10/1000µs): 8.2A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMCJ)

Paquete: DO-214AB, SMC

JANTXV2N5014

Microsemi Corporation

TRANS NPN 900V 0.2A TO5

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200 mA
• Voltage - Collector Emitter Breakdown (Max): 900 V
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V
• Power - Max: 1 W
• Frequency - Transition: -
• Operating Temperature: -65°C ~ 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AA, TO-5-3 Metal Can
• Supplier Device Package: TO-5AA

Paquete: -

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