Página 12 - Microsemi Corporation Productos - Transistores - FET, MOSFET - Simple | Heisener Electronics
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Microsemi Corporation Productos - Transistores - FET, MOSFET - Simple

Registros 613
Página  12/22
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
APT15F50K
Microsemi Corporation

MOSFET N-CH 500V 15A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 223W (Tc)
  • Rds On (Max) @ Id, Vgs: 390 mOhm @ 7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias2.352
MOSFET (Metal Oxide)
500V
15A (Tc)
-
5V @ 500µA
55nC @ 10V
2250pF @ 25V
-
-
223W (Tc)
390 mOhm @ 7A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
APT14050JVFR
Microsemi Corporation

MOSFET N-CH 1400V 23A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1400V
  • Current - Continuous Drain (Id) @ 25°C: 23A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 820nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 694W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP?
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias7.312
MOSFET (Metal Oxide)
1400V
23A
10V
4V @ 5mA
820nC @ 10V
13500pF @ 25V
±30V
-
694W (Tc)
500 mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
ISOTOP?
SOT-227-4, miniBLOC
APT12F60K
Microsemi Corporation

MOSFET N-CH 600V 12A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 500µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 225W (Tc)
  • Rds On (Max) @ Id, Vgs: 620 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias6.112
MOSFET (Metal Oxide)
600V
12A (Tc)
10V
5V @ 500µA
55nC @ 10V
2200pF @ 25V
±30V
-
225W (Tc)
620 mOhm @ 6A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
APT1204R7KFLLG
Microsemi Corporation

MOSFET N-CH 1200V 3.5A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 3.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 31nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 135W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1.75A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias2.032
MOSFET (Metal Oxide)
1200V
3.5A (Tc)
10V
5V @ 1mA
31nC @ 10V
715pF @ 25V
±30V
-
135W (Tc)
4.7 Ohm @ 1.75A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
APT11N80KC3G
Microsemi Corporation

MOSFET N-CH 800V 11A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 680µA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1585pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias5.216
MOSFET (Metal Oxide)
800V
11A (Tc)
10V
3.9V @ 680µA
60nC @ 10V
1585pF @ 25V
±20V
-
156W (Tc)
450 mOhm @ 7.1A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
APT10M11B2VFRG
Microsemi Corporation

MOSFET N-CH 100V 100A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 520W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX?
  • Package / Case: TO-247-3 Variant
Paquete: TO-247-3 Variant
En existencias4.352
MOSFET (Metal Oxide)
100V
100A (Tc)
10V
4V @ 2.5mA
450nC @ 10V
10300pF @ 25V
±30V
-
520W (Tc)
11 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX?
TO-247-3 Variant
APT10M09B2VFRG
Microsemi Corporation

MOSFET N-CH 100V 100A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 625W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
Paquete: TO-247-3 Variant
En existencias4.544
MOSFET (Metal Oxide)
100V
100A (Tc)
10V
4V @ 2.5mA
350nC @ 10V
9875pF @ 25V
±30V
-
625W (Tc)
9 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
APT1003RKLLG
Microsemi Corporation

MOSFET N-CH 1000V 4A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 694pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 139W (Tc)
  • Rds On (Max) @ Id, Vgs: 3 Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220 [K]
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias7.056
MOSFET (Metal Oxide)
1000V
4A (Tc)
10V
5V @ 1mA
34nC @ 10V
694pF @ 25V
±30V
-
139W (Tc)
3 Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220 [K]
TO-220-3
APT10035B2LLG
Microsemi Corporation

MOSFET N-CH 1000V 28A T-MAX

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 690W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 14A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: T-MAX? [B2]
  • Package / Case: TO-247-3 Variant
Paquete: TO-247-3 Variant
En existencias4.208
MOSFET (Metal Oxide)
1000V
28A (Tc)
10V
5V @ 2.5mA
186nC @ 10V
5185pF @ 25V
±30V
-
690W (Tc)
350 mOhm @ 14A, 10V
-55°C ~ 150°C (TJ)
Through Hole
T-MAX? [B2]
TO-247-3 Variant
APTM120UM70FAG
Microsemi Corporation

MOSFET N-CH 1200V 171A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 171A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1650nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 43500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 85.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias5.440
MOSFET (Metal Oxide)
1200V
171A
10V
5V @ 30mA
1650nC @ 10V
43500pF @ 25V
±30V
-
5000W (Tc)
80 mOhm @ 85.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100UM65SCAVG
Microsemi Corporation

MOSFET N-CH 1000V 145A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 145A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3250W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: Module
Paquete: Module
En existencias2.688
MOSFET (Metal Oxide)
1000V
145A
10V
5V @ 20mA
1068nC @ 10V
28500pF @ 25V
±30V
-
3250W (Tc)
78 mOhm @ 72.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
Module
APTM100UM45FAG
Microsemi Corporation

MOSFET N-CH 1000V 215A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 215A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1602nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 42700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 52 mOhm @ 107.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias3.504
MOSFET (Metal Oxide)
1000V
215A
10V
5V @ 30mA
1602nC @ 10V
42700pF @ 25V
±30V
-
5000W (Tc)
52 mOhm @ 107.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM120U10SCAVG
Microsemi Corporation

MOSFET N-CH 1200V 116A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 116A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 1100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3290W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 58A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias3.312
MOSFET (Metal Oxide)
1200V
116A
10V
5V @ 20mA
1100nC @ 10V
28900pF @ 25V
±30V
-
3290W (Tc)
120 mOhm @ 58A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50UM09FAG
Microsemi Corporation

MOSFET N-CH 500V 497A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 497A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 63300pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 248.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias4.512
MOSFET (Metal Oxide)
500V
497A
10V
5V @ 30mA
1200nC @ 10V
63300pF @ 25V
±30V
-
5000W (Tc)
10 mOhm @ 248.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM120UM70DAG
Microsemi Corporation

MOSFET N-CH 1200V 171A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 171A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 30mA
  • Gate Charge (Qg) (Max) @ Vgs: 1650nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 43500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 5000W (Tc)
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 85.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias5.808
MOSFET (Metal Oxide)
1200V
171A
10V
5V @ 30mA
1650nC @ 10V
43500pF @ 25V
±30V
-
5000W (Tc)
80 mOhm @ 85.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100UM60FAG
Microsemi Corporation

MOSFET N-CH 1000V 129A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 129A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 15mA
  • Gate Charge (Qg) (Max) @ Vgs: 1116nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 31100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2272W (Tc)
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 64.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias3.552
MOSFET (Metal Oxide)
1000V
129A
10V
5V @ 15mA
1116nC @ 10V
31100pF @ 25V
±30V
-
2272W (Tc)
70 mOhm @ 64.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM120U10SAG
Microsemi Corporation

MOSFET N-CH 1200V 116A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200V
  • Current - Continuous Drain (Id) @ 25°C: 116A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 1100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3290W (Tc)
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 58A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias5.168
MOSFET (Metal Oxide)
1200V
116A
10V
5V @ 20mA
1100nC @ 10V
28900pF @ 25V
±30V
-
3290W (Tc)
120 mOhm @ 58A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50UM13SAG
Microsemi Corporation

MOSFET N-CH 500V 335A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 335A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 800nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 42200pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3290W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 167.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias5.840
MOSFET (Metal Oxide)
500V
335A
10V
5V @ 20mA
800nC @ 10V
42200pF @ 25V
±30V
-
3290W (Tc)
15 mOhm @ 167.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100UM65DAG
Microsemi Corporation

MOSFET N-CH 1000V 145A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 145A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3250W (Tc)
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 72.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias6.944
MOSFET (Metal Oxide)
1000V
145A
10V
5V @ 20mA
1068nC @ 10V
28500pF @ 25V
±30V
-
3250W (Tc)
78 mOhm @ 72.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20UM04SAG
Microsemi Corporation

MOSFET N-CH 200V 417A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 417A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1560W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 208.5A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias7.584
MOSFET (Metal Oxide)
200V
417A
10V
5V @ 10mA
560nC @ 10V
28800pF @ 25V
±30V
-
1560W (Tc)
5 mOhm @ 208.5A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM10UM02FAG
Microsemi Corporation

MOSFET N-CH 100V 570A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 570A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1660W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias6.064
MOSFET (Metal Oxide)
100V
570A
10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
±30V
-
1660W (Tc)
2.5 mOhm @ 200A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100SKM90G
Microsemi Corporation

MOSFET N-CH 1000V 78A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 78A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias7.648
MOSFET (Metal Oxide)
1000V
78A
10V
5V @ 10mA
744nC @ 10V
20700pF @ 25V
±30V
-
1250W (Tc)
105 mOhm @ 39A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100DAM90G
Microsemi Corporation

MOSFET N-CH 1000V 78A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 78A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 39A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias7.248
MOSFET (Metal Oxide)
1000V
78A
10V
5V @ 10mA
744nC @ 10V
20700pF @ 25V
±30V
-
1250W (Tc)
105 mOhm @ 39A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20DAM04G
Microsemi Corporation

MOSFET N-CH 200V 372A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 372A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias5.040
MOSFET (Metal Oxide)
200V
372A
10V
5V @ 10mA
560nC @ 10V
28900pF @ 25V
±30V
-
1250W (Tc)
5 mOhm @ 186A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50SKM17G
Microsemi Corporation

MOSFET N-CH 500V 180A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias2.784
MOSFET (Metal Oxide)
500V
180A
10V
5V @ 10mA
560nC @ 10V
28000pF @ 25V
±30V
-
1250W (Tc)
20 mOhm @ 90A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM50DAM17G
Microsemi Corporation

MOSFET N-CH 500V 180A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 180A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 90A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias5.408
MOSFET (Metal Oxide)
500V
180A
10V
5V @ 10mA
560nC @ 10V
28000pF @ 25V
±30V
-
1250W (Tc)
20 mOhm @ 90A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM10SKM02G
Microsemi Corporation

MOSFET N-CH 100V 495A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 495A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias5.312
MOSFET (Metal Oxide)
100V
495A
10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
±30V
-
1250W (Tc)
2.5 mOhm @ 200A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM10DAM02G
Microsemi Corporation

MOSFET N-CH 100V 495A SP6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 495A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SP6
  • Package / Case: SP6
Paquete: SP6
En existencias7.200
MOSFET (Metal Oxide)
100V
495A
10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
±30V
-
1250W (Tc)
2.5 mOhm @ 200A, 10V
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6