Página 9 - Microsemi Corporation Productos - Transistores - Bipolar (BJT) - RF | Heisener Electronics
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Microsemi Corporation Productos - Transistores - Bipolar (BJT) - RF

Registros 296
Página  9/10
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot 2N4957
Microsemi Corporation

TRANS PNP 30V 30MA TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
Paquete: TO-72-3 Metal Can
En existencias11.436
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
JANTX2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
Paquete: 3-SMD, No Lead
En existencias6.368
15V
-
4.5dB @ 450MHz
21dB
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
Paquete: 3-SMD, No Lead
En existencias3.936
15V
-
4.5dB @ 450MHz
21dB
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
hot JANTXV2N2857
Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 12.5dB ~ 21dB @ 450MHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
Paquete: TO-72-3 Metal Can
En existencias3.856
15V
500MHz
4.5dB @ 450MHz
12.5dB ~ 21dB @ 450MHz
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
JAN2N2857
Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 12.5dB ~ 21dB @ 450MHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
Paquete: TO-72-3 Metal Can
En existencias5.568
15V
500MHz
4.5dB @ 450MHz
12.5dB ~ 21dB @ 450MHz
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
MS2203
Microsemi Corporation

TRANS RF BIPO 5W 300MA M220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.8dB ~ 12.3dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M220
  • Supplier Device Package: M220
Paquete: M220
En existencias6.336
20V
1.09GHz
-
10.8dB ~ 12.3dB
5W
120 @ 100mA, 5V
300mA
200°C (TJ)
Chassis Mount
M220
M220
MS2204
Microsemi Corporation

TRANS RF BIPO 600MW 300MA M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.8dB
  • Power - Max: 600mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
Paquete: M115
En existencias2.432
20V
1.09GHz
-
10.8dB
600mW
15 @ 100mA, 5V
300mA
200°C (TJ)
Chassis Mount
M115
M115
MS2206
Microsemi Corporation

TRANS RF BIPO 7.5W 1A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 7.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
Paquete: M115
En existencias4.496
20V
1.025GHz ~ 1.15GHz
-
10dB
7.5W
20 @ 100mA, 5V
1A
200°C (TJ)
Chassis Mount
M115
M115
hot MRF517
Microsemi Corporation

TRANS RF BIPO 2.5W 150MA TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 10dB
  • Power - Max: 2.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 60mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paquete: TO-205AD, TO-39-3 Metal Can
En existencias7.680
20V
4GHz
-
9dB ~ 10dB
2.5W
50 @ 60mA, 10V
150mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
BFY90
Microsemi Corporation

TRANS RF NPN 200MW 50MA TO72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): 2.5dB ~ 5dB @ 500MHz
  • Gain: 20dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
Paquete: TO-206AF, TO-72-4 Metal Can
En existencias2.912
15V
1.3GHz
2.5dB ~ 5dB @ 500MHz
20dB
200mW
20 @ 25mA, 1V
50mA
-
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
MS1202
Microsemi Corporation

TRANS RF BIPO 15W 1A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 118MHz ~ 136MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.4dB
  • Power - Max: 15W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
Paquete: M135
En existencias3.120
35V
118MHz ~ 136MHz
-
8.4dB
15W
5 @ 100mA, 5V
1A
200°C (TJ)
Chassis Mount
M135
M135
MS2228
Microsemi Corporation

TRANS RF BIPO 175W 5.4A M214

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.03GHz ~ 1.09GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 175W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 5.4A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M214
  • Supplier Device Package: M214
Paquete: M214
En existencias5.888
65V
1.03GHz ~ 1.09GHz
-
9dB
175W
10 @ 1A, 5V
5.4A
200°C (TJ)
Chassis Mount
M214
M214
MS1007
Microsemi Corporation

TRANS RF BIPO 233W 10A M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB
  • Power - Max: 233W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 18 @ 1.4A, 6V
  • Current - Collector (Ic) (Max): 10A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
Paquete: M174
En existencias5.328
55V
30MHz
-
14dB
233W
18 @ 1.4A, 6V
10A
200°C (TJ)
Chassis Mount
M174
M174
MS2393
Microsemi Corporation

TRANS RF BIPO 87.5W 11A M138

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.2dB
  • Power - Max: 583W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 300mA, 5V
  • Current - Collector (Ic) (Max): 11A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M138
  • Supplier Device Package: M138
Paquete: M138
En existencias3.104
65V
1.025GHz ~ 1.15GHz
-
8.2dB
583W
5 @ 300mA, 5V
11A
200°C (TJ)
Chassis Mount
M138
M138
MS2361
Microsemi Corporation

TRANS RF BIPO 87.5W 2.6A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2.6A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
Paquete: M115
En existencias6.368
65V
1.025GHz ~ 1.15GHz
-
9dB
87.5W
-
2.6A
200°C (TJ)
Chassis Mount
M115
M115
MS2341
Microsemi Corporation

TRANS RF BIPO 87.5W 2.6A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 2.6A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
Paquete: M115
En existencias4.272
65V
1.025GHz ~ 1.15GHz
-
9dB
87.5W
-
2.6A
200°C (TJ)
Chassis Mount
M115
M115
0105-50
Microsemi Corporation

TRANS RF BIPO 140W 500MHZ 55JT2

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 100MHz ~ 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB ~ 10dB
  • Power - Max: 140W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 1A, 5V
  • Current - Collector (Ic) (Max): 7A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55JT
  • Supplier Device Package: 55JT
Paquete: 55JT
En existencias6.528
65V
100MHz ~ 500MHz
-
8.5dB ~ 10dB
140W
10 @ 1A, 5V
7A
200°C (TJ)
Chassis Mount
55JT
55JT
hot 2307
Microsemi Corporation

TRANS BIPO 20V 7W 55BT

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 42V
  • Frequency - Transition: 2.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 20.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT
  • Supplier Device Package: 55BT
Paquete: 55BT
En existencias360.000
42V
2.3GHz
-
8dB
20.5W
10 @ 500mA, 5V
1A
200°C (TJ)
Chassis Mount
55BT
55BT
2003
Microsemi Corporation

TRANS HBT RF BIPOLAR 55BT

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB
  • Power - Max: 12W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55BT-1
  • Supplier Device Package: 55BT-1
Paquete: 55BT-1
En existencias3.024
50V
2GHz
-
8.5dB
12W
10 @ 100mA, 5V
500mA
200°C (TJ)
Chassis Mount
55BT-1
55BT-1
MS2322
Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
Paquete: M115
En existencias2.016
65V
1.025GHz ~ 1.15GHz
-
10dB
87.5W
10 @ 100mA, 5V
1.5A
-
Chassis Mount
M115
M115
MS2321
Microsemi Corporation

TRANS RF BIPO 87.5W 1.5A M104

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 87.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M105
  • Supplier Device Package: M105
Paquete: M105
En existencias2.768
65V
1.025GHz ~ 1.15GHz
-
10dB
87.5W
-
1.5A
200°C (TJ)
Chassis Mount
M105
M105
MS2272
Microsemi Corporation

TRANS RF BIPO 940W 24A M216

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB
  • Power - Max: 940W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 24A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
Paquete: M216
En existencias3.920
65V
960MHz ~ 1.215GHz
-
7.6dB
940W
10 @ 5A, 5V
24A
200°C (TJ)
Chassis Mount
M216
M216
MS2215
Microsemi Corporation

TRANS RF BIPO 300W 16.5A M216

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.5dB
  • Power - Max: 300W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 16.5A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M216
  • Supplier Device Package: M216
Paquete: M216
En existencias3.728
55V
960MHz ~ 1.215GHz
-
7.5dB
300W
20 @ 5A, 5V
16.5A
250°C (TJ)
Chassis Mount
M216
M216
hot MS2214
Microsemi Corporation

TRANS BIPO NPN 300W 8A M218

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.5dB
  • Power - Max: 300W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
Paquete: M218
En existencias5.360
55V
960MHz ~ 1.215GHz
-
7.5dB
300W
20 @ 2A, 5V
8A
250°C (TJ)
Chassis Mount
M218
M218
hot MS2213
Microsemi Corporation

TRANS RF BIPO 75W 3.5A M214

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.8dB
  • Power - Max: 75W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1A, 5V
  • Current - Collector (Ic) (Max): 3.5A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M214
  • Supplier Device Package: M214
Paquete: M214
En existencias4.544
55V
960MHz ~ 1.215GHz
-
7.8dB
75W
15 @ 1A, 5V
3.5A
250°C (TJ)
Chassis Mount
M214
M214
MS2212
Microsemi Corporation

TRANS RF BIPO 50W 1.8A M222

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.1dB ~ 8.9dB
  • Power - Max: 50W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 1.8A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M222
  • Supplier Device Package: M222
Paquete: M222
En existencias4.640
55V
960MHz ~ 1.215GHz
-
8.1dB ~ 8.9dB
50W
15 @ 500mA, 5V
1.8A
250°C (TJ)
Chassis Mount
M222
M222
hot MS2211
Microsemi Corporation

TRANS RF BIPO 25W 900MA M222

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 48V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.3dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 900mA
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M222
  • Supplier Device Package: M222
Paquete: M222
En existencias14.544
48V
960MHz ~ 1.215GHz
-
9.3dB
25W
30 @ 250mA, 5V
900mA
250°C (TJ)
Chassis Mount
M222
M222
MS2205
Microsemi Corporation

TRANS RF BIPO 21.9W 1A M220

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 21.9W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M105
  • Supplier Device Package: M105
Paquete: M105
En existencias5.584
45V
1.025GHz ~ 1.15GHz
-
9.5dB
21.9W
10 @ 100mA, 5V
1A
200°C (TJ)
Chassis Mount
M105
M105
MS2202
Microsemi Corporation

TRANS BIPO NPN M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
Paquete: M115
En existencias7.248
3.5V
1.025GHz ~ 1.15GHz
-
9dB
10W
30 @ 100mA, 5V
250mA
200°C (TJ)
Chassis Mount
M115
M115
hot 2N5109
Microsemi Corporation

TRANS RF NPN 2.5W 400MA TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 1.2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 2.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 15V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
Paquete: TO-205AD, TO-39-3 Metal Can
En existencias19.092
20V
1.2GHz
-
12dB
2.5W
40 @ 50mA, 15V
400mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39