Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Channel Type | Number of Drivers | Gate Type | Voltage - Supply | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Input Type | High Side Voltage - Max (Bootstrap) | Rise / Fall Time (Typ) | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix |
IC MOSFET DVR ADAPTIVE PWR 8DIP
|
Paquete: 8-DIP (0.300", 7.62mm) |
En existencias6.912 |
|
Single | 1 | N-Channel MOSFET | 10.8 V ~ 16.5 V | - | 1A, 1A | Non-Inverting | 500V | 50ns, 35ns | -40°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
IXYS |
IC MOSFET DRVR 9A LOSIDE 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias58.440 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3.5V | 9A, 9A | Non-Inverting | - | 10ns, 10ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Microchip Technology |
IC DRIVER MOSF QUAD 1.2A 16SOIC
|
Paquete: 16-SOIC (0.295", 7.50mm Width) |
En existencias13.020 |
|
Independent | 4 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 1.2A, 1.2A | Non-Inverting | - | 14ns, 13ns | 0°C ~ 70°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
IXYS |
IC HIGH SIDE DRIVER 16SOIC
|
Paquete: 16-SOIC (0.295", 7.50mm Width) |
En existencias6.688 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 10 V ~ 20 V | 1V, 3.65V | 2A, 2A | Non-Inverting | 1200V | 15ns, 15ns | -40°C ~ 150°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Microchip Technology |
IC MOSFET DRIVER 1.5A 16SOIC
|
Paquete: 16-SOIC (0.295", 7.50mm Width) |
En existencias2.768 |
|
Single | 1 | N-Channel, P-Channel MOSFET | 4 V ~ 6 V | 0.8V, 2.4V | 1.5A, 1.5A | Non-Inverting | - | 33ns, 27ns | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Maxim Integrated |
IC MOSFET DVR 4A 20NS DL 8-TDFN
|
Paquete: 8-WDFN Exposed Pad |
En existencias5.456 |
|
Independent | 2 | N-Channel MOSFET | 4 V ~ 15 V | - | 4A, 4A | Inverting, Non-Inverting | - | 32ns, 26ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-TDFN-EP (3x3) |
||
Microchip Technology |
IC MOSFET DVR 12A HS 8DFN
|
Paquete: 8-VDFN Exposed Pad |
En existencias20.184 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
||
Microchip Technology |
IC MOSFET DVR 32V NONINV 8SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) Exposed Pad |
En existencias2.688 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 32 V | 0.8V, 2.4V | 2.5A, 2.5A | Inverting, Non-Inverting | - | 120ns, 45ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) Exposed Pad | 8-SOIC-EP |
||
Texas Instruments |
IC GATE DRVR HALF BRDG 5A 12SMD
|
Paquete: 12-WFBGA, DSBGA |
En existencias4.288 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 5.5 V | 1.76V, 1.89V | 1.2A, 5A | Non-Inverting | 107V | 7ns, 1.5ns | -40°C ~ 125°C (TJ) | Surface Mount | 12-WFBGA, DSBGA | 12-DSBGA |
||
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias7.072 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 4.5A, 4.5A | Inverting | - | 12ns, 12ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Microchip Technology |
IC MOSFET DVR 3A DUAL HS 8DFN
|
Paquete: 8-VDFN Exposed Pad |
En existencias4.096 |
|
Independent | 2 | N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 3A, 3A | Inverting, Non-Inverting | - | 23ns, 25ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
||
IXYS Integrated Circuits Division |
2A MOSFET 8 DIP DUAL INV/NON-INV
|
Paquete: 8-DIP (0.300", 7.62mm) |
En existencias34.056 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 35 V | 0.8V, 3V | 2A, 2A | Inverting, Non-Inverting | - | 7.5ns, 6.5ns | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP |
||
Microchip Technology |
IC MOSFET DRIVER 2A 8DFN-S
|
Paquete: 8-VDFN Exposed Pad |
En existencias6.960 |
|
Independent | 2 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 2A, 2A | Inverting | - | 12ns, 15ns | -40°C ~ 150°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-DFN-S (6x5) |
||
Diodes Incorporated |
IC GATE DRVR IGBT/MOSFET SOT26
|
Paquete: SOT-23-6 |
En existencias2.192 |
|
Single | 1 | IGBT, SiC MOSFET | 40V (Max) | - | 10A, 10A | Non-Inverting | - | 48ns, 35ns | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 |
||
Microchip Technology |
IC MOSFET DVR 3A HS 8DIP
|
Paquete: 8-DIP (0.300", 7.62mm) |
En existencias226.428 |
|
Single | 1 | N-Channel, P-Channel MOSFET | 4.5 V ~ 16 V | 0.8V, 2V | 3A, 3A | Non-Inverting | - | 20ns, 20ns | 0°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP |
||
Microchip Technology |
IC MOSFET DVR 12A HS TO220-5
|
Paquete: TO-220-5 |
En existencias27.780 |
|
Single | 1 | IGBT, N-Channel, P-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2.4V | 13A, 13A | Non-Inverting | - | 30ns, 32ns | -40°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
||
Texas Instruments |
IC GATE DRIVER FET/IGBT 8SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias13.128 |
|
Single | 1 | IGBT, N-Channel MOSFET | 10 V ~ 32 V | 1.2V, 2.2V | 2.5A, 5A | Non-Inverting | - | 15ns, 7ns | -40°C ~ 140°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Infineon Technologies |
IC DRIVER HI/LO SIDE 600V 14-DIP
|
Paquete: 14-DIP (0.300", 7.62mm) |
En existencias6.528 |
|
Independent | 2 | IGBT, N-Channel MOSFET | 10 V ~ 20 V | 0.8V, 2.5V | 4A, 4A | Non-Inverting | 600V | 22ns, 18ns | -40°C ~ 150°C (TJ) | Through Hole | 14-DIP (0.300", 7.62mm) | 14-DIP |
||
Fairchild/ON Semiconductor |
IC GATE DVR DUAL 4A 8-MLP
|
Paquete: 8-WDFN Exposed Pad |
En existencias162.816 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 5A, 5A | Non-Inverting | - | 12ns, 9ns | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN Exposed Pad | 8-MLP (3x3) |
||
Fairchild/ON Semiconductor |
IC GATE DVR LOSIDE DUAL 2A 8SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias22.080 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | 0.8V, 2V | 3A, 3A | Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Renesas Electronics America |
IC DVR MOSFET N-CH 3PHASE 24SOIC
|
Paquete: 24-SOIC (0.295", 7.50mm Width) |
En existencias39.276 |
|
3-Phase | 6 | N-Channel MOSFET | 7 V ~ 15 V | 1V, 2.5V | 500mA, 500mA | Inverting, Non-Inverting | 95V | 20ns, 10ns | -40°C ~ 150°C (TJ) | Surface Mount | 24-SOIC (0.295", 7.50mm Width) | 24-SOIC |
||
ON Semiconductor |
IC GATE DVR LOW DUAL 2A HS 8SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias5.648 |
|
Independent | 2 | N-Channel MOSFET | 4.5 V ~ 18 V | - | 3A, 3A | Inverting, Non-Inverting | - | 12ns, 9ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
||
Maxim Integrated |
INTEGRATED CIRCUIT
|
Paquete: - |
En existencias7.904 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
||
Linear Technology |
IC POWER MANAGEMENT
|
Paquete: 8-WFDFN Exposed Pad |
En existencias7.152 |
|
Synchronous | 2 | N-Channel MOSFET | 4 V ~ 6.5 V | 3V, 6.5V | 3.2A, 4.5A | Non-Inverting | 42V | 8ns, 7ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-WFDFN Exposed Pad | 8-DFN (2x3) |
||
Power Integrations |
MOD GATE DVR 2MBI800U4G-120
|
Paquete: - |
En existencias2.100 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
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Analog Devices Inc. |
ISO 1/2 BRIDGE DRV W/DEADTIME UV
|
Paquete: - |
En existencias2.880 |
|
Synchronous | 2 | IGBT | 2.5V ~ 6.5V | 1.5V, 3.5V | 4A, 6A | Non-Inverting | - | 25ns, 30ns | -40°C ~ 125°C (TJ) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
||
Tamura |
GATE DRIVER UNIT FOR FUJI ELECTR
|
Paquete: - |
Request a Quote |
|
Synchronous | 4 | IGBT | 13V ~ 28V | - | - | Non-Inverting | 1200 V | - | -40°C ~ 85°C (TA) | Chassis Mount | Module | Module |
||
Monolithic Power Systems Inc. |
100V, 4A, HIGH-FREQUENCY HALF-BR
|
Paquete: - |
Request a Quote |
|
Independent | 2 | N-Channel MOSFET | 8V ~ 15V | - | 4A, 5.9A | Non-Inverting | 115 V | 15ns, 10ns | -40°C ~ 125°C (TJ) | Surface Mount | 8-VDFN Exposed Pad | 8-QFN (4x4) |