Página 905 - Memoria | Circuitos integrados | Heisener Electronics
Contáctenos
SalesDept@heisener.com 86-755-83210559-827
Iniciar sesión/Registrar
Language Translation

* Please refer to the English Version as our Official Version.

BOM
Carro 0

Memoria

Registros 62.144
Página  905/2.220
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CY7C13201KV18-300BZXC
Cypress Semiconductor Corp

IC SRAM 18MBIT 300MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, DDR II
  • Memory Size: 18Mb (512K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 300MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
Paquete: 165-LBGA
En existencias4.496
SRAM
SRAM - Synchronous, DDR II
18Mb (512K x 36)
Parallel
300MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
AT25640AY6-10YH-1.8
Microchip Technology

IC EEPROM 64KBIT 20MHZ 8MINIMAP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 64Kb (8K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-Mini Map (2x3)
Paquete: 8-UFDFN Exposed Pad
En existencias7.280
EEPROM
EEPROM
64Kb (8K x 8)
SPI
20MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-Mini Map (2x3)
MT48H4M16LFB4-8 IT:H
Micron Technology Inc.

IC SDRAM 64MBIT 125MHZ 54VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 64Mb (4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 6ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-VFBGA
  • Supplier Device Package: 54-VFBGA (8x8)
Paquete: 54-VFBGA
En existencias5.360
DRAM
SDRAM - Mobile LPSDR
64Mb (4M x 16)
Parallel
125MHz
15ns
6ns
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
54-VFBGA
54-VFBGA (8x8)
IDT71V65602S150BQ
IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 9Mb (256K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 150MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.8ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
Paquete: 165-TBGA
En existencias6.336
SRAM
SRAM - Synchronous ZBT
9Mb (256K x 36)
Parallel
150MHz
-
3.8ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
71V35761SA200BQGI
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 200MHZ 165CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 3.1ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-TBGA
  • Supplier Device Package: 165-CABGA (13x15)
Paquete: 165-TBGA
En existencias6.880
SRAM
SRAM - Synchronous
4.5Mb (128K x 36)
Parallel
200MHz
-
3.1ns
3.135 V ~ 3.465 V
-40°C ~ 85°C (TA)
Surface Mount
165-TBGA
165-CABGA (13x15)
IS61LV25616AL-10T-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
Paquete: 44-TSOP (0.400", 10.16mm Width)
En existencias6.624
SRAM
SRAM - Asynchronous
4Mb (256K x 16)
Parallel
-
10ns
10ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
CY7C1021BNL-15ZXCT
Cypress Semiconductor Corp

IC SRAM 1MBIT 15NS 44TSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (64K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 44-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 44-TSOP II
Paquete: 44-TSOP (0.400", 10.16mm Width)
En existencias6.912
SRAM
SRAM - Asynchronous
1Mb (64K x 16)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
44-TSOP (0.400", 10.16mm Width)
44-TSOP II
MT48H16M32L2B5-10 IT TR
Micron Technology Inc.

IC SDRAM 512MBIT 100MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 512Mb (16M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
Paquete: 90-VFBGA
En existencias5.072
DRAM
SDRAM - Mobile LPSDR
512Mb (16M x 32)
Parallel
100MHz
-
7.5ns
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
MT48V8M32LFB5-8 TR
Micron Technology Inc.

IC SDRAM 256MBIT 125MHZ 90VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 125MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 7ns
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-VFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
Paquete: 90-VFBGA
En existencias7.888
DRAM
SDRAM - Mobile LPSDR
256Mb (8M x 32)
Parallel
125MHz
15ns
7ns
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
90-VFBGA
90-VFBGA (8x13)
AT28BV16-25TC
Microchip Technology

IC EEPROM 16KBIT 250NS 28TSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: 250ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 28-TSSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 28-TSOP
Paquete: 28-TSSOP (0.465", 11.80mm Width)
En existencias5.616
EEPROM
EEPROM
16Kb (2K x 8)
Parallel
-
3ms
250ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
28-TSSOP (0.465", 11.80mm Width)
28-TSOP
IS46DR16128A-3DBLA2
ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 333MHZ 84BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR2
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 450ps
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 84-LFBGA
  • Supplier Device Package: 84-LFBGA (10.5x13.5)
Paquete: 84-LFBGA
En existencias5.872
DRAM
SDRAM - DDR2
2Gb (128M x 16)
Parallel
333MHz
15ns
450ps
1.7 V ~ 1.9 V
-40°C ~ 105°C (TA)
Surface Mount
84-LFBGA
84-LFBGA (10.5x13.5)
S30MS512R25TFW010
Cypress Semiconductor Corp

IC FLASH MEMORY 48TSOP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias5.856
-
-
-
-
-
-
-
-
-
-
-
-
S29GL01GT11FHV020
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 1Gb (128M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias2.208
FLASH
FLASH - NOR
1Gb (128M x 8)
Parallel
-
60ns
110ns
2.7 V ~ 3.6 V
-40°C ~ 105°C (TA)
-
-
-
71V3557S75BGG8
IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 7.5NS 119BGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous ZBT
  • Memory Size: 4.5Mb (128K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5ns
  • Voltage - Supply: 3.135 V ~ 3.465 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 119-BGA
  • Supplier Device Package: 119-PBGA (14x22)
Paquete: 119-BGA
En existencias5.040
SRAM
SRAM - Synchronous ZBT
4.5Mb (128K x 36)
Parallel
-
-
7.5ns
3.135 V ~ 3.465 V
0°C ~ 70°C (TA)
Surface Mount
119-BGA
119-PBGA (14x22)
hot PC28F256P33B2E
Micron Technology Inc.

NOR FLASH 16MX16 PLASTIC PBF TBG

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias30.972
-
-
-
-
-
-
-
-
-
-
-
-
SST39SF010A-70-4C-WHE-T
Microchip Technology

IC FLASH 1MBIT 70NS 32TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-TFSOP (0.488", 12.40mm Width)
  • Supplier Device Package: 32-TSOP
Paquete: 32-TFSOP (0.488", 12.40mm Width)
En existencias2.432
FLASH
FLASH
1Mb (128K x 8)
Parallel
-
20µs
70ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-TFSOP (0.488", 12.40mm Width)
32-TSOP
LE2416RLBXA-SH
ON Semiconductor

IC EEPROM 16KBIT 400KHZ 6WLCSP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 900ns
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFBGA, WLCSP
  • Supplier Device Package: 6-WLCSP (1.2x0.80)
Paquete: 6-XFBGA, WLCSP
En existencias4.704
EEPROM
EEPROM
16Kb (2K x 8)
I2C
400kHz
5ms
900ns
1.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
6-XFBGA, WLCSP
6-WLCSP (1.2x0.80)
MT29F64G08CBEFBL94C3WC1-R
Micron Technology Inc.

IC FLASH MLC 64G 8GX8

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias5.936
-
-
-
-
-
-
-
-
-
-
-
-
MT53B512M32D2GZ-062 WT ES:B
Micron Technology Inc.

IC DRAM 16G 1600MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 16Gb (512M x 32)
  • Memory Interface: -
  • Clock Frequency: 1600MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -30°C ~ 85°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias3.104
DRAM
SDRAM - Mobile LPDDR4
16Gb (512M x 32)
-
1600MHz
-
-
1.1V
-30°C ~ 85°C (TC)
-
-
-
W25M161AWEIT-TR
Winbond Electronics

IC FLASH 16MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND, FLASH - NOR
  • Memory Size: 16Mbit (FLASH-NOR), 1Gbit (FLASH-NAND)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 104 MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (8x6)
Paquete: -
Request a Quote
FLASH
FLASH - NAND, FLASH - NOR
16Mbit (FLASH-NOR), 1Gbit (FLASH-NAND)
SPI - Quad I/O
104 MHz
3ms
-
1.7V ~ 1.95V
-40°C ~ 85°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (8x6)
IS62WVS5128FBLL-20NLI-TR
ISSI, Integrated Silicon Solution Inc

4Mb, Serial SRAM, 2.2V-3.6V, 20M

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4Mbit
  • Memory Interface: SPI - Quad I/O, SDI
  • Clock Frequency: 20 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 25 ns
  • Voltage - Supply: 2.2V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
Paquete: -
Request a Quote
SRAM
SRAM - Synchronous
4Mbit
SPI - Quad I/O, SDI
20 MHz
-
25 ns
2.2V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MTFC64GAPALHT-AAT
Micron Technology Inc.

IC FLASH 512GBIT MMC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gbit
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias1.227
FLASH
FLASH - NAND
512Gbit
MMC
-
-
-
-
-40°C ~ 105°C (TA)
-
-
-
S25HS02GTDPBHV153
Infineon Technologies

IC FLASH 2GBIT SPI/QUAD 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-FBGA (8x8)
Paquete: -
En existencias7.500
FLASH
FLASH - NOR (SLC)
2Gbit
SPI - Quad I/O, QPI
133 MHz
1.7ms
6 ns
1.7V ~ 2V
-40°C ~ 105°C (TA)
Surface Mount
24-TBGA
24-FBGA (8x8)
R1LV3216RSD-5SR-B0
Renesas Electronics Corporation

STANDARD SRAM, 2MX16, 55NS

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
TMS6789-20N
Texas Instruments

STANDARD SRAM, 16KX4

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
IS46LQ32128AL-06T2BLA2-TR
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-TFBGA
  • Supplier Device Package: 200-TFBGA (10x14.5)
Paquete: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR4X
4Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-TFBGA
200-TFBGA (10x14.5)
CG8965AM
Infineon Technologies

IC

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
CY7C1425KV18-250CKB
Cypress Semiconductor Corp

IC SRAM 36MBIT PARALLEL 250MHZ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 36Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 250 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 1.9V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
SRAM
SRAM - Synchronous, QDR II
36Mbit
Parallel
250 MHz
-
-
1.7V ~ 1.9V
-40°C ~ 85°C (TA)
-
-
-