Infineon Technologies Productos

BSM150GB170DN2HOSA1

Infineon Technologies

MODULE IGBT 1700V

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1700V
• Current - Collector (Ic) (Max): 220A
• Power - Max: 1250W
• Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 150A
• Current - Collector Cutoff (Max): 1.5mA
• Input Capacitance (Cies) @ Vce: 20nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: Module

AUXMOS20956STR

Infineon Technologies

MOSFET N-CH 16SOIC

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

IRF3704LPBF

Infineon Technologies

MOSFET N-CH 20V 77A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFR3504ZTR

Infineon Technologies

MOSFET N-CH 40V 42A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 90W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 42A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

SPA11N60C3XKSA1

Infineon Technologies

MOSFET N-CH 600V 11A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 33W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-31 Full Pack
• Package / Case: TO-220-3 Full Pack

Paquete: TO-220-3 Full Pack

IRF5210STRR

Infineon Technologies

MOSFET P-CH 100V 40A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPW65R190CFDAFKSA1

Infineon Technologies

MOSFET N-CH 650V 17.5A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 17.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 700µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1850pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 151W (Tc)
• Rds On (Max) @ Id, Vgs: 190 mOhm @ 7.3A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

Paquete: TO-247-3

IPB06N03LA

Infineon Technologies

MOSFET N-CH 25V 50A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 2653pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPD050N10N5ATMA1

Infineon Technologies

MOSFET N-CH TO-252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 84µA
• Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 150W (Tc)
• Rds On (Max) @ Id, Vgs: 5 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

BSS84PH6327XTSA2

Infineon Technologies

MOSFET P-CH 60V 170MA SOT-23

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 19pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 8 Ohm @ 170mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: TO-236-3, SC-59, SOT-23-3

BC 807-25 B5003

Infineon Technologies

TRANS PNP 45V 0.5A SOT-23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 200MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

Paquete: TO-236-3, SC-59, SOT-23-3

BBY5305WE6327HTSA1

Infineon Technologies

DIODE TUNING HIGH Q CC SOT-323

• Capacitance @ Vr, F: 3.1pF @ 3V, 1MHz
• Capacitance Ratio: 2.6
• Capacitance Ratio Condition: C1/C3
• Voltage - Peak Reverse (Max): 6V
• Diode Type: 1 Pair Common Cathode
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

Paquete: SC-70, SOT-323

TLE8718SAAUMA4

Infineon Technologies

IC PWR SWITCH 36DSO

• Switch Type: General Purpose
• Number of Outputs: 18
• Ratio - Input:Output: 1:18
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: -
• Voltage - Load: 4.5 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): -
• Current - Output (Max): -
• Rds On (Typ): -
• Input Type: -
• Features: -
• Fault Protection: Over Temperature, Short Circuit, UVLO
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 36-BSSOP (0.295", 7.50mm Width)
• Supplier Device Package: PG-DSO-36

Paquete: 36-BSSOP (0.295", 7.50mm Width)

IR2277STRPBF

Infineon Technologies

IC CURRENT SENSE 0.2& 16SOIC

• Function: Current Sense
• Sensing Method: -
• Accuracy: ±0.2%
• Voltage - Input: 8 V ~ 20 V
• Current - Output: -
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.295", 7.50mm Width)

PEF 24624 E V1.2-G

Infineon Technologies

IC SHDSL TRANSCEIVER LBGA-324

• Function: Symmetrical DSL Front End (SDFE)
• Interface: ISDN, SHDSL
• Number of Circuits: 4
• Voltage - Supply: -
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 324-LBGA
• Supplier Device Package: P-LBGA-324

Paquete: 324-LBGA

SAK-TC1767-256F133HR AD

Infineon Technologies

IC MCU 32BIT 2MB FLASH 176LQFP

• Core Processor: TriCore?
• Core Size: 32-Bit
• Speed: 133MHz
• Connectivity: ASC, CAN, MLI, MSC, SSC
• Peripherals: DMA, POR, WDT
• Number of I/O: 88
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 1.42 V ~ 1.58 V
• Data Converters: A/D 4x10b, 32x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 176-LQFP
• Supplier Device Package: 176-LQFP (24x24)

Paquete: 176-LQFP

XMC4700E196K2048AAXQMA1

Infineon Technologies

IC MCU 32BIT 2MB FLASH 196BGA

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 144MHz
• Connectivity: CAN, EBI/EMI, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
• Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
• Number of I/O: 155
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 352K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 32x12b, D/A 2x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 196-LFBGA
• Supplier Device Package: PG-LFBGA-196-2

Paquete: 196-LFBGA

SLB9670XQ20FW760XUMA1

Infineon Technologies

SECURITY IC'S/AUTHENTICATION IC'

• Applications: Embedded Security Trusted Computing
• Core Processor: 16-Bit
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: SPI
• Number of I/O: 1
• Voltage - Supply: 1.65 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 32-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-32-13

Paquete: 32-VFQFN Exposed Pad

TLE4935LHALA1

Infineon Technologies

MAGNETIC SWITCH LATCH PSSO-3-2

• Function: Latch
• Technology: Hall Effect
• Polarization: South Pole
• Sensing Range: 20mT Trip, -20mT Release
• Test Condition: 25°C
• Voltage - Supply: 3.8 V ~ 24 V
• Current - Supply (Max): 8mA
• Current - Output (Max): 100mA
• Output Type: Open Collector
• Features: Temperature Compensated
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 3-SIP, SSO-3-02
• Supplier Device Package: P-SSO-3-2

Paquete: 3-SIP, SSO-3-02

TLE92633BQXV33XUMA1

Infineon Technologies

IC SBC 48VQFN

• Applications: Automotive
• Interface: SPI
• Voltage - Supply: 28V
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: PG-VQFN-48-31
• Mounting Type: Surface Mount

Paquete: 48-VFQFN Exposed Pad

PX8897EDQGR2ER1240AXUMA1

Infineon Technologies

IC REGULATOR PG-VQFN-48-2

• Applications: -
• Voltage - Input: -
• Number of Outputs: -
• Voltage - Output: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

CHL8326-07CRT

Infineon Technologies

IC REG BUCK 48VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

CHL8325A-19CRT

Infineon Technologies

IC REG BUCK 40VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

BSC320N20NS3GATMA1

Infineon Technologies

MOSFET N-CH 200V 36A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 32mOhm @ 36A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8-1
• Package / Case: 8-PowerTDFN

Paquete: -

IKWH75N65EH7XKSA1

Infineon Technologies

IGBT TRENCH FS 650V 80A TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 80 A
• Current - Collector Pulsed (Icm): 300 A
• Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 75A
• Power - Max: 341 W
• Switching Energy: 2.42mJ (on), 1.4mJ (off)
• Input Type: Standard
• Gate Charge: 150 nC
• Td (on/off) @ 25°C: 25ns/45ns
• Test Condition: 400V, 75A, 10Ohm, 15V
• Reverse Recovery Time (trr): 89 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-32

Paquete: -

CYT2BL8BAAQ0AZSGST

Infineon Technologies

IC MCU

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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IGI60F140A1LAUMA1

Infineon Technologies

IC HALF BRIDGE DRIVER 1A 21TIQFN

• Output Configuration: Half Bridge
• Applications: General Purpose
• Interface: -
• Load Type: Inductive, Capacitive, Resistive
• Technology: Power MOSFET
• Rds On (Typ): 140mOhm
• Current - Output / Channel: 1A
• Current - Peak Output: -
• Voltage - Supply: -
• Voltage - Load: -
• Operating Temperature: -
• Features: -
• Fault Protection: -
• Mounting Type: Surface Mount
• Package / Case: 21-TQFN Exposed Pad
• Supplier Device Package: PG-TIQFN-21-1

Paquete: -

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94-2312PBF

Infineon Technologies

IC MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

Request a Quote