Infineon Technologies Productos

IRGP4266D-EPBF

Infineon Technologies

IGBT 650V 140A 455W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 140A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 455W
• Switching Energy: 2.5mJ (on), 2.2mJ (off)
• Input Type: Standard
• Gate Charge: 210nC
• Td (on/off) @ 25°C: 50ns/200ns
• Test Condition: 400V, 75A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 170ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

Paquete: TO-247-3

IKQ75N120CT2XKSA1

Infineon Technologies

IGBT HS SW 1200V 75A TO-247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 150A
• Current - Collector Pulsed (Icm): 300A
• Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
• Power - Max: 938W
• Switching Energy: 6.7mJ (on), 4.1mJ (off)
• Input Type: Standard
• Gate Charge: 370nC
• Td (on/off) @ 25°C: 37ns/328ns
• Test Condition: 600V, 75A, 6 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3-46

Paquete: TO-247-3

AUIRGP76524D0

Infineon Technologies

DIODE IGBT 680V 24A TO-247AC

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

IKP20N60H3

Infineon Technologies

IGBT 600V 40A 170W TO220-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
• Power - Max: 170W
• Switching Energy: 690µJ
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: 16ns/194ns
• Test Condition: 400V, 20A, 14.6 Ohm, 15V
• Reverse Recovery Time (trr): 112ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: PG-TO-220-3

Paquete: TO-220-3

IPU60R1K5CEBKMA1

Infineon Technologies

MOSFET N-CH 600V TO-251-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 90µA
• Gate Charge (Qg) (Max) @ Vgs: 9.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 28W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 1.1A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paquete: TO-251-3 Short Leads, IPak, TO-251AA

IRL5602S

Infineon Technologies

MOSFET P-CH 20V 24A D2PAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 75W (Tc)
• Rds On (Max) @ Id, Vgs: 42 mOhm @ 12A, 4.5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPD65R650CEAUMA1

Infineon Technologies

MOSFET N-CH 650V 7A TO-252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 210µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 650 mOhm @ 2.1A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IPB60R125C6

Infineon Technologies

MOSFET N-CH 600V 30A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 960µA
• Gate Charge (Qg) (Max) @ Vgs: 96nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 219W (Tc)
• Rds On (Max) @ Id, Vgs: 125 mOhm @ 14.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BSC060P03NS3E G

Infineon Technologies

MOSFET P-CH 30V 17.7A TDSON-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.1V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 81nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6020pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

Paquete: 8-PowerTDFN

IPB017N06N3 G

Infineon Technologies

MOSFET N-CH 60V 180A TO263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 196µA
• Gate Charge (Qg) (Max) @ Vgs: 275nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 23000pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-7
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab)

Paquete: TO-263-7, D2Pak (6 Leads + Tab)

IRF1407STRLPBF

Infineon Technologies

MOSFET N-CH 75V 100A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 75V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 7.8 mOhm @ 78A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BF5020WH6327XTSA1

Infineon Technologies

MOSFET N-CH 8V 25MA SOT343

• Transistor Type: N-Channel
• Frequency: 800MHz
• Gain: 26dB
• Voltage - Test: 5V
• Current Rating: 25mA
• Noise Figure: 1.2dB
• Current - Test: 10mA
• Power - Output: -
• Voltage - Rated: 8V
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

Paquete: SC-82A, SOT-343

IKCM30F60HAXKMA1

Infineon Technologies

IFPS MODULES 24MDIP

• Type: IGBT
• Configuration: 3 Phase
• Current: 30A
• Voltage: 600V
• Voltage - Isolation: 2000Vrms
• Package / Case: 24-PowerDIP Module (1.028", 26.10mm)

Paquete: 24-PowerDIP Module (1.028", 26.10mm)

IFX1117GSV

Infineon Technologies

IC REG LIN POS ADJ 1A SOT223-4

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 15V
• Voltage - Output (Min/Fixed): 1.25V
• Voltage - Output (Max): 13.6V
• Voltage Dropout (Max): 1.4V @ 1A
• Current - Output: 1A
• Current - Quiescent (Iq): -
• Current - Supply (Max): 5mA
• PSRR: 70dB (120Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Short Circuit
• Operating Temperature: 0°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

Paquete: TO-261-4, TO-261AA

IPS031GTR

Infineon Technologies

IC MOSFET PWR SW SGL 12A 8-SOIC

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 35V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 2.2A
• Rds On (Typ): 45 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: 8-SOIC (0.154", 3.90mm Width)

BTS4175SGA

Infineon Technologies

IC SWITCH PWR HISIDE 8DSO

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 6 V ~ 52 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 1.3A
• Rds On (Typ): 175 mOhm
• Input Type: Non-Inverting
• Features: Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8

Paquete: 8-SOIC (0.154", 3.90mm Width)

IR2113SPBF

Infineon Technologies

IC MOSFET DRVR HI/LO SIDE 16SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 3.3 V ~ 20 V
• Logic Voltage - VIL, VIH: 6V, 9.5V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 25ns, 17ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

Paquete: 16-SOIC (0.295", 7.50mm Width)

XC2236N16F66LAAKXUMA1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 64LQFP

• Core Processor: C166SV2
• Core Size: 16/32-Bit
• Speed: 66MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 38
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 9x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

SAE800

Infineon Technologies

IC PROGRAMMABLE TONE GONG 8-DIP

• Function: Audio Tone Processor
• Applications: Audio Systems
• Number of Channels: 1
• Interface: Logic
• Voltage - Supply: 2.8 V ~ 18 V
• Operating Temperature: -25°C ~ 125°C (TJ)
• Specifications: 100kHz
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: P-DIP-8

Paquete: 8-DIP (0.300", 7.62mm)

111-4193PBF

Infineon Technologies

IC REG BUCK CTRLR SMD

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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FP50R12N2T7B11BPSA2

Infineon Technologies

LOW POWER ECONO

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A
• Current - Collector Cutoff (Max): 10 µA
• Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO2B

Paquete: -

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CY95F634KNPMC-G-106-UNE2

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: F²MC-8FX
• Core Size: 8-Bit
• Speed: 16.25MHz
• Connectivity: I2C, LINbus, SIO, UART/USART
• Peripherals: LVD, LVR, POR, PWM, WDT
• Number of I/O: 29
• Program Memory Size: 20KB (20K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 1K x 8
• Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.5V
• Data Converters: A/D 8x8/10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-LQFP
• Supplier Device Package: 32-LQFP (7x7)

Paquete: -

CY8C4146LQS-S273

Infineon Technologies

IC MCU 32BIT 64KB FLASH 40QFN

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, DMA, LCD, POR, PWM, Temp Sensor, WDT
• Number of I/O: 34
• Program Memory Size: 64KB (64K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 8K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

Paquete: -

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CYPD6228-96BZXI

Infineon Technologies

CCG6DF

• Applications: USB Type C
• Core Processor: ARM® Cortex®-M0
• Program Memory Type: FLASH (64kB), ROM (96kB)
• Controller Series: -
• RAM Size: 16K x 8
• Interface: I2C, SPI, UART, USB
• Number of I/O: 23
• Voltage - Supply: 2.75V ~ 5.5V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 96-VFBGA
• Supplier Device Package: 96-BGA (6x6)

Paquete: -

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FS150R12N3T4PB81BPSA1

Infineon Technologies

LOW POWER ECONO

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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CYPD3195-24LDXST

Infineon Technologies

CCG3PA

• Applications: USB Type C
• Core Processor: ARM® Cortex®-M0
• Program Memory Type: FLASH (64kB)
• Controller Series: -
• RAM Size: 8K x 8
• Interface: I2C, SPI, UART, USB
• Number of I/O: 12
• Voltage - Supply: 3V ~ 24.5V
• Operating Temperature: -40°C ~ 105°C
• Mounting Type: Surface Mount, Wettable Flank
• Package / Case: 24-UFQFN Exposed Pad
• Supplier Device Package: 24-QFN (4x4)

Paquete: -

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DDB6U100N16RRBOSA1

Infineon Technologies

IGBT MOD 1200V 50A 350W

• IGBT Type: -
• Configuration: Single Chopper
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Power - Max: 350 W
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 50A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: -

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PBL3766-1NS

Infineon Technologies

BIPOLAR SLIC

• Function: Subscriber Line Interface Concept (SLIC)
• Interface: 2-Wire
• Number of Circuits: 1
• Voltage - Supply: -24V ~ -58V
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 22-DIP
• Supplier Device Package: 22-DIP

Paquete: -

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