Infineon Technologies Productos

IPI80N06S4L07AKSA1

Infineon Technologies

MOSFET N-CH 60V 80A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 40µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5680pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFR15N20DTRRP

Infineon Technologies

MOSFET N-CH 200V 17A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 3W (Ta), 140W (Tc)
• Rds On (Max) @ Id, Vgs: 165 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

BSP317PE6327T

Infineon Technologies

MOSFET P-CH 250V 0.43A SOT223

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 370µA
• Gate Charge (Qg) (Max) @ Vgs: 15.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 262pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.8W (Ta)
• Rds On (Max) @ Id, Vgs: 4 Ohm @ 430mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT223-4
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

IRFR3706PBF

Infineon Technologies

MOSFET N-CH 20V 75A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 88W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFZ46NL

Infineon Technologies

MOSFET N-CH 55V 53A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1696pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
• Rds On (Max) @ Id, Vgs: 16.5 mOhm @ 28A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-262
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFR3518PBF

Infineon Technologies

MOSFET N-CH 80V 38A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1710pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 29 mOhm @ 18A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IPB80N06S2L07ATMA3

Infineon Technologies

MOSFET N-CH 55V 80A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 150µA
• Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3160pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 210W (Tc)
• Rds On (Max) @ Id, Vgs: 6.7 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7478TRPBF

Infineon Technologies

MOSFET N-CH 60V 7A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 31nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 4.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

PTF210101M V1

Infineon Technologies

IC FET RF LDMOS 10W TSSOP-10

• Transistor Type: LDMOS
• Frequency: 2.17GHz
• Gain: 15dB
• Voltage - Test: 28V
• Current Rating: 1µA
• Noise Figure: -
• Current - Test: 180mA
• Power - Output: 10W
• Voltage - Rated: 65V
• Package / Case: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: PG-RFP-10

Paquete: 10-TFSOP, 10-MSOP (0.118", 3.00mm Width)

BFS 460L6 E6327

Infineon Technologies

TRANSISTOR RF TWIN NPN TSLP-6

• Transistor Type: 2 NPN (Dual)
• Voltage - Collector Emitter Breakdown (Max): 5.8V
• Frequency - Transition: 22GHz
• Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 1.8GHz ~ 3GHz
• Gain: 10dB ~ 14.5dB
• Power - Max: 200mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
• Current - Collector (Ic) (Max): 50mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN
• Supplier Device Package: PG-TSLP-6

Paquete: 6-XFDFN

BFP193WH6327XTSA1

Infineon Technologies

TRANS RF NPN 12V 80MA SOT343

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 12V
• Frequency - Transition: 8GHz
• Noise Figure (dB Typ @ f): 1dB ~ 1.6dB @ 900MHz ~ 1.8GHz
• Gain: 13.5dB ~ 20.5dB
• Power - Max: 580mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
• Current - Collector (Ic) (Max): 80mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SC-82A, SOT-343
• Supplier Device Package: PG-SOT343-4

Paquete: SC-82A, SOT-343

BCR 141S E6727

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 22k
• Resistor - Emitter Base (R2) (Ohms): 22k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): -
• Frequency - Transition: 130MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

Paquete: 6-VSSOP, SC-88, SOT-363

IDH08G65C5XKSA2

Infineon Technologies

DIODE SCHOTTKY 650V 8A TO220-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 8A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 140µA @ 650V
• Capacitance @ Vr, F: 250pF @ 1V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: PG-TO220-2-1
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-220-2

IDW75D65D1XKSA1

Infineon Technologies

DIODE GEN PURP 650V 150A TO247-3

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 650V
• Current - Average Rectified (Io): 150A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.7V @ 75A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 108ns
• Current - Reverse Leakage @ Vr: 40µA @ 650V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: TO-247-3

IDM05G120C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 1200V 5A TO252-2

• Diode Type: Silicon Carbide Schottky
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 5A (DC)
• Voltage - Forward (Vf) (Max) @ If: 1.8V @ 5A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0ns
• Current - Reverse Leakage @ Vr: 33µA @ 1200V
• Capacitance @ Vr, F: 301pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: PG-TO252-2
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

BAS4006E6433HTMA1

Infineon Technologies

DIODE ARRAY SCHOTTKY 40V SOT23

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 120mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 100ps
• Current - Reverse Leakage @ Vr: 1µA @ 30V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

Paquete: TO-236-3, SC-59, SOT-23-3

TLS205B0LDVXUMA1

Infineon Technologies

IC REG LIN POS ADJ 500MA 10TSON

• Output Configuration: Positive
• Output Type: Adjustable
• Number of Regulators: 1
• Voltage - Input (Max): 20V
• Voltage - Output (Min/Fixed): 1.22V
• Voltage - Output (Max): 20V
• Voltage Dropout (Max): 0.45V @ 500mA
• Current - Output: 500mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 60µA ~ 31mA
• PSRR: 65dB (120Hz)
• Control Features: Enable
• Protection Features: Over Current, Over Temperature, Reverse Polarity
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 10-TFDFN Exposed Pad
• Supplier Device Package: PG-TSON-10

Paquete: 10-TFDFN Exposed Pad

IRS4428SPBF

Infineon Technologies

IC DVR LOW SIDE 25V 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 6 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 2.3A, 3.3A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 25ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

ICE3A1065LJHKLA1

Infineon Technologies

IC OFFLINE CTRLR SMPS OTP 8DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 18V
• Voltage - Supply (Vcc/Vdd): 10.5 V ~ 26 V
• Duty Cycle: 75%
• Frequency - Switching: 100kHz
• Power (Watts): 32W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -25°C ~ 130°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8
• Mounting Type: Through Hole

Paquete: 8-DIP (0.300", 7.62mm)

IPTG054N15NM5ATMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150 V
• Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 143A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
• Vgs(th) (Max) @ Id: 4.6V @ 191µA
• Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5700 pF @ 75 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 250W (Tc)
• Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOG-8
• Package / Case: 8-PowerSMD, Gull Wing

Paquete: -

IRF7380QTRPBF

Infineon Technologies

MOSFET 2N-CH 80V 3.6A 8-SOIC

• FET Type: MOSFET (Metal Oxide)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 80V
• Current - Continuous Drain (Id) @ 25°C: 3.6A
• Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
• Power - Max: 2W
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

Paquete: -

Request a Quote

PEB2095PVA5

Infineon Technologies

OCTAT-P OCTAL TRANSCEICER

• Function: ISDN
• Interface: IOM-2, PCM
• Number of Circuits: -
• Voltage - Supply: 4.75V ~ 5.25V
• Current - Supply: 20mA
• Power (Watts): -
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Through Hole
• Package / Case: 24-DIP (0.600", 15.24mm)
• Supplier Device Package: P-DIP-24

Paquete: -

Request a Quote

T4021N52TOHXPSA1

Infineon Technologies

SCR MODULE 5350V 6100A DO200AE

• Structure: Single
• Number of SCRs, Diodes: 1 SCR
• Voltage - Off State: 5.35 kV
• Current - On State (It (AV)) (Max): 5460 A
• Current - On State (It (RMS)) (Max): 6100 A
• Voltage - Gate Trigger (Vgt) (Max): 3.5 V
• Current - Gate Trigger (Igt) (Max): 350 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 105000A @ 50Hz
• Current - Hold (Ih) (Max): 350 mA
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF

Paquete: -

Request a Quote

BSM100GB120DLCHOSA1

Infineon Technologies

IGBT MOD 1200V 100A 830W

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 100 A
• Power - Max: 830 W
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: -

Request a Quote

CG8234AA

Infineon Technologies

IC SRAM MICROPOWER

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

Request a Quote

CYT3BBBCEBQ0BZEGST

Infineon Technologies

IC MCU 32BT 4.0625MB FLSH 272BGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M7
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 250MHz
• Connectivity: CANbus, Ethernet, I2C, LINbus, eMMC/SD, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, I2S, LVD, POR, PWM, WDT
• Number of I/O: 220
• Program Memory Size: 4.0625MB (4.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 256K x 8
• RAM Size: 768K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 90x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 272-LFBGA
• Supplier Device Package: 272-BGA (16x16)

Paquete: -

Request a Quote

FP150R12KT4B11BPSA1

Infineon Technologies

IGBT MODULE 1200V 150A

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 150 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: -

Request a Quote

SIDC09D60F6X1SA4

Infineon Technologies

DIODE GEN PURP 600V 30A DIE

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 27 µA @ 600 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: -

Request a Quote