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Infineon Technologies Productos

Registros 16.988
Página  41/607
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hot IRG4IBC30S
Infineon Technologies

IGBT 600V 23.5A 45W TO220FP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23.5A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 45W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
Paquete: TO-220-3 Full Pack
En existencias159.948
IPD038N04NGBTMA1
Infineon Technologies

MOSFET N-CH 40V 90A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 45µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias6.768
hot IRLR120NTRR
Infineon Technologies

MOSFET N-CH 100V 10A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 440pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 48W (Tc)
  • Rds On (Max) @ Id, Vgs: 185 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias72.000
IPP80P03P405AKSA1
Infineon Technologies

MOSFET P-CH TO220-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 253µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 137W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO220-3-1
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias4.544
IPD65R950CFDATMA1
Infineon Technologies

MOSFET N-CH 650V 3.9A TO-252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 380pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 36.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias7.456
hot IPB037N06N3 G
Infineon Technologies

MOSFET N-CH 60V 90A TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias717.048
PTFA260451E V1
Infineon Technologies

IC FET RF LDMOS 45W H-30265-2

  • Transistor Type: LDMOS
  • Frequency: 2.68GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30265-2
Paquete: 2-Flatpack, Fin Leads
En existencias7.872
CHIPT0204GUE6327X6SA1
Infineon Technologies

CHIP T0204GU E6327 DIE

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias2.720
hot IP2004TR
Infineon Technologies

IC REG BUCK ADJ 40A SYNC LGA

  • Function: Step-Down
  • Output Configuration: Positive
  • Topology: Buck
  • Output Type: Adjustable
  • Number of Outputs: 1
  • Voltage - Input (Min): 3V
  • Voltage - Input (Max): 13.2V
  • Voltage - Output (Min/Fixed): 0.8V
  • Voltage - Output (Max): 8V
  • Current - Output: 40A
  • Frequency - Switching: 250kHz ~ 1.5MHz
  • Synchronous Rectifier: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Power Block (LGA)
  • Supplier Device Package: LGA (7.7x7.7)
Paquete: Power Block (LGA)
En existencias18.480
IRS2158DSPBF
Infineon Technologies

IC DVR HALF BRIDGE 600V 16-SOIC

  • Type: Fluorescent Lamp Controller
  • Frequency: 43.7kHz ~ 48.3kHz
  • Voltage - Supply: 11.5 V ~ 16.6 V
  • Current - Supply: 10mA
  • Current - Output Source/Sink: -
  • Dimming: Yes
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 16-SOIC
Paquete: 16-SOIC (0.154", 3.90mm Width)
En existencias5.296
BCR420UE6433HTMA1
Infineon Technologies

IC LED DRIVER LINEAR 65MA SC74-6

  • Type: Linear
  • Topology: -
  • Internal Switch(s): Yes
  • Number of Outputs: 1
  • Voltage - Supply (Min): 1.4V
  • Voltage - Supply (Max): 40V
  • Voltage - Output: 40V
  • Current - Output / Channel: 65mA
  • Frequency: -
  • Dimming: -
  • Applications: Lighting
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-74, SOT-457
  • Supplier Device Package: PG-SC74-6
Paquete: SC-74, SOT-457
En existencias5.232
ICE3B0565JXKLA1
Infineon Technologies

IC OFFLINE CTRLR SMPS OTP 8DIP

  • Output Isolation: Isolated
  • Internal Switch(s): Yes
  • Voltage - Breakdown: 650V
  • Topology: Flyback
  • Voltage - Start Up: 18V
  • Voltage - Supply (Vcc/Vdd): 10.3 V ~ 26 V
  • Duty Cycle: 75%
  • Frequency - Switching: 67kHz
  • Power (Watts): 25W
  • Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
  • Control Features: Soft Start
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: PG-DIP-8
  • Mounting Type: Through Hole
Paquete: 8-DIP (0.300", 7.62mm)
En existencias5.472
ICE2QR1765GXUMA1
Infineon Technologies

IC CTRLR SMPS QUASI-RESON DSO12

  • Output Isolation: Isolated
  • Internal Switch(s): Yes
  • Voltage - Breakdown: 650V
  • Topology: Flyback
  • Voltage - Start Up: 18V
  • Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
  • Duty Cycle: 50%
  • Frequency - Switching: 52kHz
  • Power (Watts): 49W
  • Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
  • Control Features: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 16-SOIC (0.154", 3.90mm Width) 12 leads
  • Supplier Device Package: PG-DSO-12
  • Mounting Type: Surface Mount
Paquete: 16-SOIC (0.154", 3.90mm Width) 12 leads
En existencias6.432
PEB 20256 E V2.2
Infineon Technologies

IC NETWORK CONTROLLER BGA-388-2

  • Function: Network Controller
  • Interface: HDLC, PPP, SS7, TMA
  • Number of Circuits: -
  • Voltage - Supply: 3 V ~ 3.6 V
  • Current - Supply: 200mA
  • Power (Watts): 3W
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: 388-BBGA
  • Supplier Device Package: 388-BGA (35x35)
Paquete: 388-BBGA
En existencias5.808
SAF-XC886C-8FFA 5V AC
Infineon Technologies

IC MCU 8BIT 32KB FLASH 48TQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 24MHz
  • Connectivity: CAN, SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 34
  • Program Memory Size: 32KB (32K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1.75K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: 48-TQFP
  • Supplier Device Package: 48-TQFP (7x7)
Paquete: 48-TQFP
En existencias5.248
CY15B108QSN-108BKXI
Infineon Technologies

IC FRAM 8MBIT SPI/QUAD 24FBGA

  • Memory Type: Non-Volatile
  • Memory Format: FRAM
  • Technology: FRAM (Ferroelectric RAM)
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 108 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6.7 ns
  • Voltage - Supply: 1.8V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-FBGA (6x8)
Paquete: -
En existencias225
FF450R12ME4EB11BPSA2
Infineon Technologies

MEDIUM POWER ECONO AG-ECONOD-411

  • IGBT Type: Trench Field Stop
  • Configuration: Half Bridge Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 450 A
  • Power - Max: 20 mW
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 450A
  • Current - Collector Cutoff (Max): 3 mA
  • Input Capacitance (Cies) @ Vce: 28 nF @ 25 V
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-ECONOD-6
Paquete: -
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CY9AF142NABGL-GK9E1
Infineon Technologies

IC MCU 32BIT 160KB FLASH 112FBGA

  • Core Processor: ARM® Cortex®-M3
  • Core Size: 32-Bit
  • Speed: 40MHz
  • Connectivity: CSIO, EBI/EMI, I2C, SPI, UART/USART
  • Peripherals: LVD, POR, PWM, WDT
  • Number of I/O: 83
  • Program Memory Size: 160KB (160K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 16K x 8
  • Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
  • Data Converters: A/D 24x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 112-LFBGA
  • Supplier Device Package: 112-PFBGA (10x10)
Paquete: -
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CYT2BL3BAAQ0AZSGS
Infineon Technologies

IC MCU 32BIT 4.063MB FLSH 64LQFP

  • Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
  • Core Size: 32-Bit Dual-Core
  • Speed: 100MHz, 160MHz
  • Connectivity: CANbus, FIFO, I2C, IrDA, LINbus, SPI, UART/USART
  • Peripherals: Brown-out Detect/Reset, Crypto - AES, DMA, LVD, POR, PWM, SHA, TRNG, WDT
  • Number of I/O: 49
  • Program Memory Size: 4.063MB (4.063M x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: 128K x 8
  • RAM Size: 512K x 8
  • Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
  • Data Converters: A/D 45x12b SAR
  • Oscillator Type: External, Internal
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-LQFP (10x10)
Paquete: -
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IPB037N06N3GATMA1
Infineon Technologies

MOSFET N-CH 60V 90A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 188W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Paquete: -
En existencias12.000
BCX5516E6327HTSA1
Infineon Technologies

TRANS NPN 60V 1A SOT89-4

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: PG-SOT89-4-2
Paquete: -
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S25HS512TDPMHM010
Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 16SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
Paquete: -
Request a Quote
S25HL02GTFABHV150
Infineon Technologies

SEMPER

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Gbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 1.7ms
  • Access Time: 6.5 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-BGA (8x6)
Paquete: -
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FP75R12KT4B16BOSA1
Infineon Technologies

IGBT MOD 1200V 150A 385W

  • IGBT Type: Trench Field Stop
  • Configuration: Three Phase Inverter
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 150 A
  • Power - Max: 385 W
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 75A
  • Current - Collector Cutoff (Max): 1 mA
  • Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
  • Input: Three Phase Bridge Rectifier
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: -
En existencias21
ISP25DP06NMXTSA1
Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223-4

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 270µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 250mOhm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
Paquete: -
En existencias11.919
DD540N22KHPSA2
Infineon Technologies

DIODE MODULE GP 2.2KV 540A

  • Diode Configuration: 1 Pair Series Connection
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200 V
  • Current - Average Rectified (Io) (per Diode): 540A
  • Voltage - Forward (Vf) (Max) @ If: 1.48 V @ 1700 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
  • Operating Temperature - Junction: -40°C ~ 150°C
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
Paquete: -
En existencias6
BSC155N06NDATMA1
Infineon Technologies

MOSFET 2N-CH 60V 20A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 30V
  • Power - Max: 50W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
Paquete: -
En existencias21.720
S70KS1282GABHM023
Infineon Technologies

IC PSRAM 128MBIT HYPERBUS 24FBGA

  • Memory Type: Volatile
  • Memory Format: PSRAM
  • Technology: PSRAM (Pseudo SRAM)
  • Memory Size: 128Mbit
  • Memory Interface: HyperBus
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35 ns
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 24-VBGA
  • Supplier Device Package: 24-FBGA (6x8)
Paquete: -
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