Infineon Technologies Productos

IRG8CH184K10F

Infineon Technologies

IGBT CHIP WAFER

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 200A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 200A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 1110nC
• Td (on/off) @ 25°C: 135ns/640ns
• Test Condition: 600V, 200A, 2 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

Paquete: Die

IRGSL4062DPBF

Infineon Technologies

IGBT 600V 48A 250W TO262

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 48A
• Current - Collector Pulsed (Icm): 96A
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
• Power - Max: 250W
• Switching Energy: 115µJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 50nC
• Td (on/off) @ 25°C: 41ns/104ns
• Test Condition: 400V, 24A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 89ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
• Supplier Device Package: TO-262

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IRG4BC40W-SPBF

Infineon Technologies

IGBT 600V 40A 160W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
• Power - Max: 160W
• Switching Energy: 110µJ (on), 230µJ (off)
• Input Type: Standard
• Gate Charge: 98nC
• Td (on/off) @ 25°C: 27ns/100ns
• Test Condition: 480V, 20A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SPI80N06S2L-11

Infineon Technologies

MOSFET N-CH 55V 80A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 93µA
• Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2650pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 158W (Tc)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

SPB80N06S2-H5

Infineon Technologies

MOSFET N-CH 55V 80A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 230µA
• Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF7701TR

Infineon Technologies

MOSFET P-CH 12V 10A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 5050pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 11 mOhm @ 10A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

Paquete: 8-TSSOP (0.173", 4.40mm Width)

IRFR9120NTRR

Infineon Technologies

MOSFET P-CH 100V 6.6A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 480 mOhm @ 3.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

AUIRF3004WL

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9450pF @ 32V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 mOhm @ 195A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-262-3 Wide
• Package / Case: TO-262-3 Wide Leads

Paquete: TO-262-3 Wide Leads

IPA60R099P7XKSA1

Infineon Technologies

HIGH POWER_NEW

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

SPI11N60C3XKSA1

Infineon Technologies

MOSFET N-CH 650V 11A TO-262

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.9V @ 500µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA

IPT60R125G7XTMA1

Infineon Technologies

MOSFET N-CH 650V 20A HSOF-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 320µA
• Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 400V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 120W (Tc)
• Rds On (Max) @ Id, Vgs: 125 mOhm @ 6.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-HSOF-8
• Package / Case: 8-PowerSFN

Paquete: 8-PowerSFN

BCR 151F E6327

Infineon Technologies

TRANS PREBIAS PNP 250MW TSFP-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 100k
• Resistor - Emitter Base (R2) (Ohms): 100k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 120MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

Paquete: SOT-723

TLE5027CXAAD47AIHAMA1

Infineon Technologies

SPEED SENSORS 3SSO

• Function: -
• Technology: -
• Polarization: -
• Sensing Range: -
• Test Condition: -
• Voltage - Supply: -
• Current - Supply (Max): -
• Current - Output (Max): -
• Output Type: -
• Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

BGA428H6327XTSA1

Infineon Technologies

IC AMP MMIC 4V 12MA SOT363

• Frequency: 100MHz ~ 6GHz
• P1dB: -19dBm
• Gain: 20dB
• Noise Figure: 1.4dB
• RF Type: General Purpose
• Voltage - Supply: 2.4 V ~ 3 V
• Current - Supply: 8.2mA
• Test Frequency: 1.8GHz
• Package / Case: 6-VSSOP, SC-88, SOT-363
• Supplier Device Package: PG-SOT363-6

Paquete: 6-VSSOP, SC-88, SOT-363

2EDN8533RXTMA1

Infineon Technologies

DRIVER IC PG-TSSOP-8

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5V ~ 20V
• Logic Voltage - VIL, VIH: 1.4V, 1.9V
• Current - Peak Output (Source, Sink): 5A, 5A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 8.6ns, 6ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
• Supplier Device Package: PG-TSSOP-8

Paquete: -

D2601N90TXPSA1

Infineon Technologies

DIODE GEN PURP 9KV 3040A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 9000 V
• Current - Average Rectified (Io): 3040A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 mA @ 9000 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AE
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 160°C

Paquete: -

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S29GL128N90TFIR23

Infineon Technologies

IC FLASH 128MBIT PARALLEL 56TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 90ns
• Access Time: 90 ns
• Voltage - Supply: 3V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 56-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 56-TSOP

Paquete: -

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S25HL01GTDPBHV033

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

Paquete: -

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CY9AF112NPMC-GNE1

Infineon Technologies

IC MCU 32BIT 128KB FLASH 100LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

Paquete: -

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BUZ30AHXKSA1

Infineon Technologies

MOSFET N-CH 200V 21A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

Paquete: -

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CY9AF144NAPMC-GNK1E2

Infineon Technologies

IC MCU 32BIT 288KB FLASH 100LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, EBI/EMI, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 83
• Program Memory Size: 288KB (288K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 24x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x14)

Paquete: -

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CY9AF141LAPMC-G-JNE2

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, I2C, SPI, UART/USART
• Peripherals: LVD, POR, PWM, WDT
• Number of I/O: 51
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 12x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LQFP
• Supplier Device Package: 64-LQFP (12x12)

Paquete: -

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SPD09P06PLGBTMA1

Infineon Technologies

MOSFET P-CH 60V 9.7A TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 250mOhm @ 6.8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

Paquete: -

CYAT81685-100AA71

Infineon Technologies

PSOC BASED - TRUETOUCH

• Touchscreen: 2 Wire Capacitive
• Resolution (Bits): -
• Interface: I2C, SPI
• Voltage Reference: -
• Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
• Current - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

Paquete: -

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S29GL256S10FHI013

Infineon Technologies

IC FLASH 256MBIT PARALLEL 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 256Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 60ns
• Access Time: 100 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (13x11)

Paquete: -

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ICL8800XUMA1

Infineon Technologies

IC LED DRIVER OFFL DIM 8DSO

• Type: AC DC Offline Switcher
• Topology: Flyback
• Internal Switch(s): No
• Number of Outputs: 1
• Voltage - Supply (Min): 8V
• Voltage - Supply (Max): 24V
• Voltage - Output: -
• Current - Output / Channel: -
• Frequency: -
• Dimming: Yes
• Applications: LED Lighting
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-82

Paquete: -

S26HS01GTGABHM023

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: HyperBus
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 1.7ms
• Access Time: 5.45 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (8x8)

Paquete: -

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IR3888MTRPBFAUMA1

Infineon Technologies

IC REG BUCK ADJ 25A 22IQFN

• Function: Step-Down
• Output Configuration: Positive
• Topology: Buck
• Output Type: Adjustable
• Number of Outputs: 1
• Voltage - Input (Min): 2V
• Voltage - Input (Max): 17V
• Voltage - Output (Min/Fixed): 0.6V
• Voltage - Output (Max): 17V
• Current - Output: 25A
• Frequency - Switching: 600kHz ~ 2MHz
• Synchronous Rectifier: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 22-PowerVQFN
• Supplier Device Package: PG-IQFN-22-2

Paquete: -

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