Infineon Technologies Productos

AUIRGP35B60PD-E

Infineon Technologies

IGBT 600V 60A 308W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 35A
• Power - Max: 308W
• Switching Energy: 220µJ (on), 215µJ (off)
• Input Type: Standard
• Gate Charge: 55nC
• Td (on/off) @ 25°C: 26ns/110ns
• Test Condition: 390V, 22A, 3.3 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD

Paquete: TO-247-3

IRFC8721ED

Infineon Technologies

MOSFET N-CH WAFER

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

IPU09N03LB G

Infineon Technologies

MOSFET N-CH 30V 50A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 58W (Tc)
• Rds On (Max) @ Id, Vgs: 9.3 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paquete: TO-251-3 Short Leads, IPak, TO-251AA

IRFR3103TRL

Infineon Technologies

MOSFET N-CH 400V 1.7A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6 Ohm @ 1A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF3704STRL

Infineon Technologies

MOSFET N-CH 20V 77A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 87W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPC60R385CPX1SA1

Infineon Technologies

MOSFET N-CH BARE DIE

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

IPD80R2K7C3AATMA1

Infineon Technologies

MOSFET N-CH TO252-3

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

IPU60R950C6AKMA1

Infineon Technologies

MOSFET N-CH 600V 4.4A TO251

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 37W (Tc)
• Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO251-3
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paquete: TO-251-3 Short Leads, IPak, TO-251AA

IPB60R380P6ATMA1

Infineon Technologies

MOSFET N-CH 600V TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 320µA
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 877pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 83W (Tc)
• Rds On (Max) @ Id, Vgs: 380 mOhm @ 3.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP65R099C6XKSA1

Infineon Technologies

MOSFET N-CH 650V 38A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 278W (Tc)
• Rds On (Max) @ Id, Vgs: 99 mOhm @ 12.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO-220-3
• Package / Case: TO-220-3

Paquete: TO-220-3

IRLL024NPBF

Infineon Technologies

MOSFET N-CH 55V 3.1A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 1W (Ta)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

Paquete: TO-261-4, TO-261AA

BSC052N03LS

Infineon Technologies

MOSFET N-CH 30V 17A TDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 57A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
• Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TDSON-8
• Package / Case: 8-PowerTDFN

Paquete: 8-PowerTDFN

BAR 64-02V E6327

Infineon Technologies

DIODE RF SGL 150V 100MA SC-79

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 150V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.35pF @ 20V, 1MHz
• Resistance @ If, F: 1.35 Ohm @ 100mA, 100MHz
• Power Dissipation (Max): 250mW
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-79, SOD-523
• Supplier Device Package: PG-SC79-2

Paquete: SC-79, SOD-523

BAT60BE6327HTSA1

Infineon Technologies

DIODE SCHOTTKY 10V 3A SOD323-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 10V
• Current - Average Rectified (Io): 3A (DC)
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 25µA @ 8V
• Capacitance @ Vr, F: 30pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SC-76, SOD-323
• Supplier Device Package: PG-SOD323-2
• Operating Temperature - Junction: 150°C (Max)

Paquete: SC-76, SOD-323

IPS0151S

Infineon Technologies

IC MOSFET PWR SWITCH D2PAK

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: Low Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 35V (Max)
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.8A
• Rds On (Typ): 20 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TLE8250GVIOXUMA5

Infineon Technologies

IC TXRX CAN HS 8-DSOP

• Type: Transceiver
• Protocol: CAN
• Number of Drivers/Receivers: 1/1
• Duplex: Half
• Receiver Hysteresis: 200mV
• Data Rate: 1MBd
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: PG-DSO-8-16

Paquete: 8-SOIC (0.154", 3.90mm Width)

TC237LP32F200NACKXUMA1

Infineon Technologies

32 BIT AURIX

• Core Processor: TriCore™
• Core Size: 32-Bit
• Speed: 200MHz
• Connectivity: CANbus, FlexRay, LINbus, QSPI
• Peripherals: DMA, WDT
• Number of I/O: 78
• Program Memory Size: 2MB (2M x 8)
• Program Memory Type: FLASH
• EEPROM Size: 128K x 8
• RAM Size: 192K x 8
• Voltage - Supply (Vcc/Vdd): 1.17 V ~ 1.43 V, 2.97 V ~ 5.5 V
• Data Converters: A/D 24x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: -
• Package / Case: 292-LFBGA
• Supplier Device Package: PG-LFBGA-292-6

Paquete: 292-LFBGA

C505CA4RMCAFXUMA7

Infineon Technologies

IC MCU 32BIT 44MQFP

• Core Processor: -
• Core Size: -
• Speed: -
• Connectivity: -
• Peripherals: -
• Number of I/O: -
• Program Memory Size: -
• Program Memory Type: -
• EEPROM Size: -
• RAM Size: -
• Voltage - Supply (Vcc/Vdd): -
• Data Converters: -
• Oscillator Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

SIGC12T60SNCX1SA4

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 10 A
• Current - Collector Pulsed (Icm): 30 A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 29ns/266ns
• Test Condition: 400V, 10A, 25Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

Paquete: -

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BSB056N10NN3GXUMA3

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 83A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
• Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MG-WDSON-5-3
• Package / Case: DirectFET™ Isometric MN

Paquete: -

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CY8C4125LQE-S413T

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 24MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
• Number of I/O: 34
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-UFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

Paquete: -

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98-0277PBF

Infineon Technologies

IC CTRLR BALLAST 600V .5A 14SOIC

• Type: -
• Frequency: -
• Voltage - Supply: -
• Current - Supply: -
• Current - Output Source/Sink: -
• Dimming: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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CY27410LTXI-004T

Infineon Technologies

IC

• Type: Spread Spectrum Clock Generator
• PLL: Yes with Bypass
• Input: LVCMOS, Crystal
• Output: CML, HCSL, LVCMOS, LVDS, LVPECL
• Number of Circuits: 1
• Ratio - Input:Output: 3:12
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 250MHz, 700MHz
• Divider/Multiplier: Yes/No
• Voltage - Supply: 1.71V ~ 1.89V, 2.25V ~ 2.75V, 3.13V ~ 3.46V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

Paquete: -

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CY9BF521KPMC-G-MNE2

Infineon Technologies

IC MCU 32BIT 96KB FLASH 48LQFP

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit Single-Core
• Speed: 72MHz
• Connectivity: CANbus, CSIO, I2C, LINbus, UART/USART, USB
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number of I/O: 35
• Program Memory Size: 96KB (96K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 16K x 8
• Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
• Data Converters: A/D 14x12b; D/A 2x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-LQFP
• Supplier Device Package: 48-LQFP (7x7)

Paquete: -

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CYB06447BZI-D54

Infineon Technologies

IC MCU 32BIT 1MB FLASH 124VFBGA

• Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
• Core Size: 32-Bit Dual-Core
• Speed: 100MHz, 150MHz
• Connectivity: FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
• Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, I2S, LCD, LVD, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
• Number of I/O: 100
• Program Memory Size: 1MB (1M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 288K x 8
• Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
• Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7b, 1x8/12b
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 124-VFBGA
• Supplier Device Package: 124-VFBGA (9x9)

Paquete: -

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CY14B116S-BZ35XI

Infineon Technologies

NVSRAM

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 16Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-LBGA
• Supplier Device Package: 165-FBGA (15x17)

Paquete: -

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IRGC14C40LD

Infineon Technologies

IGBT IGNITION LL

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430 V
• Current - Collector (Ic) (Max): 14 A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.65V @ 4.5V, 10A
• Power - Max: -
• Switching Energy: -
• Input Type: Logic
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

Paquete: -

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BSB013NE2LXIXUMA1

Infineon Technologies

MOSFET N-CH 25V 36A/163A 2WDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25 V
• Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 163A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 12 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MG-WDSON-2, CanPAK M™
• Package / Case: 3-WDSON

Paquete: -

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