IXYS Productos

IXDH35N60BD1

IXYS

IGBT 600V 60A 250W TO247AD

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): 70A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 35A
• Power - Max: 250W
• Switching Energy: 1.6mJ (on), 800µJ (off)
• Input Type: Standard
• Gate Charge: 120nC
• Td (on/off) @ 25°C: -
• Test Condition: 300V, 35A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 40ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 Full Pack
• Supplier Device Package: TO-247AD (IXDH)

Paquete: TO-3P-3 Full Pack

MUBW50-12E8

IXYS

MODULE IGBT CBI E3

• IGBT Type: -
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 90A
• Power - Max: 350W
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
• Current - Collector Cutoff (Max): 800µA
• Input Capacitance (Cies) @ Vce: 3.8nF @ 25V
• Input: Three Phase Bridge Rectifier
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: E3
• Supplier Device Package: E3

Paquete: E3

IXFV36N50P

IXYS

MOSFET N-CH 500V 36A PLUS220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 93nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5500pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 540W (Tc)
• Rds On (Max) @ Id, Vgs: 170 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS220
• Package / Case: TO-220-3, Short Tab

Paquete: TO-220-3, Short Tab

IXFX24N90Q

IXYS

MOSFET N-CH 900V 24A PLUS 247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 900V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 500W (Tc)
• Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

Paquete: TO-247-3

IXFR180N10

IXYS

MOSFET N-CH 100V 165A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 165A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 400nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 400W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

Paquete: ISOPLUS247?

IXFH50N60X

IXYS

MOSFET N-CH 600V 50A TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4660pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 660W (Tc)
• Rds On (Max) @ Id, Vgs: 73 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247
• Package / Case: TO-247-3

Paquete: TO-247-3

IXTQ130N15T

IXYS

MOSFET N-CH 150V 130A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 113nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9800pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 750W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 65A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

Paquete: TO-3P-3, SC-65-3

IXKR25N80C

IXYS

MOSFET N-CH 800V 25A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 355nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 18A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

Paquete: ISOPLUS247?

IXFX320N17T2

IXYS

MOSFET N-CH 170V 320A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 170V
• Current - Continuous Drain (Id) @ 25°C: 320A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 640nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 45000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1670W (Tc)
• Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

Paquete: TO-247-3

MCC56-18IO8B

IXYS

MOD THYRISTOR DUAL 1800V TO240AA

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1800V
• Current - On State (It (AV)) (Max): 64A
• Current - On State (It (RMS)) (Max): 100A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA

Paquete: TO-240AA

DHG10I1800PA

IXYS

DIODE GEN PURP 1.8KV 10A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 2.23V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 300ns
• Current - Reverse Leakage @ Vr: 50µA @ 1800V
• Capacitance @ Vr, F: 3pF @ 900V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

Paquete: TO-220-2

DSEP29-12A

IXYS

DIODE GEN PURP 1.2KV 30A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 2.75V @ 30A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 40ns
• Current - Reverse Leakage @ Vr: 250µA @ 1200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-220-2

MDK600-16N1

IXYS

DIODE MODULE 1.6KV 883A

• Diode Configuration: 1 Pair Common Cathode
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600V
• Current - Average Rectified (Io) (per Diode): 883A
• Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 18µs
• Current - Reverse Leakage @ Vr: 50mA @ 1600V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: Module

VUO100-14NO7

IXYS

RECT BRIDGE 100A 1400V FO-T-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1400V
• Current - Average Rectified (Io): 100A
• Voltage - Forward (Vf) (Max) @ If: 1.4V @ 150A
• Current - Reverse Leakage @ Vr: 500µA @ 1400V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: FO-T-A
• Supplier Device Package: FO-T-A

Paquete: FO-T-A

VUO122-08NO7

IXYS

RECT BRIDGE 3PH 800V ECO-PAC2

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 800V
• Current - Average Rectified (Io): 117A
• Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
• Current - Reverse Leakage @ Vr: 100µA @ 800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

Paquete: ECO-PAC2

VBO40-16NO6

IXYS

DIODE BRIDGE 40A 1600V SOT-227B

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.15V @ 20A
• Current - Reverse Leakage @ Vr: 40µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Paquete: SOT-227-4, miniBLOC

DMA150YA1600NA

IXYS

RECT BRIDGE GP 1600V SOT227B

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.21V @ 50A
• Current - Reverse Leakage @ Vr: 100µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: SOT-227-4, miniBLOC
• Supplier Device Package: SOT-227B

Paquete: SOT-227-4, miniBLOC

VBO68-16NO7

IXYS

DIODE BRIDGE 1600V 68A ECO-PAC1

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1600V
• Current - Average Rectified (Io): 68A
• Voltage - Forward (Vf) (Max) @ If: 1.14V @ 30A
• Current - Reverse Leakage @ Vr: 40µA @ 1600V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

Paquete: ECO-PAC1

VBO21-12NO7

IXYS

DIODE BRIDGE 21A 1200V ECO-PAC1

• Diode Type: Single Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1200V
• Current - Average Rectified (Io): 21A
• Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
• Current - Reverse Leakage @ Vr: 10µA @ 1200V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

Paquete: ECO-PAC1

LDS8865002-T2-250

IXYS

IC LED DRIVER RGLTR DIM 16TQFN

• Type: DC DC Regulator
• Topology: Switched Capacitor (Charge Pump)
• Internal Switch(s): Yes
• Number of Outputs: 6
• Voltage - Supply (Min): 2.7V
• Voltage - Supply (Max): 5.5V
• Voltage - Output: 6V
• Current - Output / Channel: 32mA
• Frequency: 1.1MHz
• Dimming: PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-WFQFN Exposed Pad
• Supplier Device Package: 16-TQFN (3x3)

Paquete: 16-WFQFN Exposed Pad

IXDI514PI

IXYS

IC GATE DRIVER SGL 14A 8-DIP

• Driven Configuration: Low-Side
• Channel Type: Single
• Number of Drivers: 1
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 30 V
• Logic Voltage - VIL, VIH: 1V, 2.5V
• Current - Peak Output (Source, Sink): 14A, 14A
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 25ns, 22ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-PDIP

Paquete: 8-DIP (0.300", 7.62mm)

IXDF402SIA

IXYS

IC MOSFET DRIVER DUAL 2A 8-SOIC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 4.5 V ~ 35 V
• Logic Voltage - VIL, VIH: 0.8V, 3V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 8ns, 8ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

Paquete: 8-SOIC (0.154", 3.90mm Width)

IX2R11M6

IXYS

IC DRVR HALF BRIDGE 2A 16-MLP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 35 V
• Logic Voltage - VIL, VIH: 6V, 9.5V
• Current - Peak Output (Source, Sink): 2A, 2A
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 500V
• Rise / Fall Time (Typ): 8ns, 7ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 16-VDFN Exposed Pad
• Supplier Device Package: 16-MLP (7x6)

Paquete: 16-VDFN Exposed Pad

CLA100E1200TZ-TUB

IXYS

THYRISTOR SCR 1200V 100A TO268AA

• Voltage - Off State: 1.2 kV
• Voltage - Gate Trigger (Vgt) (Max): 1.5 V
• Current - Gate Trigger (Igt) (Max): 40 mA
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): 100 A
• Current - On State (It (RMS)) (Max): 160 A
• Current - Hold (Ih) (Max): 100 mA
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268AA (D3Pak-HV)

Paquete: -

IXFK52N100X

IXYS

MOSFET N-CH 1000V 52A TO264

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000 V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 245 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6725 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1250W (Tc)
• Rds On (Max) @ Id, Vgs: 125mOhm @ 26A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264
• Package / Case: TO-264-3, TO-264AA

Paquete: -

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IX4310N

IXYS

HIGH SPEED LOW-SIDE DRIVER 2A 8L

• Driven Configuration: -
• Channel Type: -
• Number of Drivers: -
• Gate Type: -
• Voltage - Supply: -
• Logic Voltage - VIL, VIH: -
• Current - Peak Output (Source, Sink): -
• Input Type: -
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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MCB60I1200TZ-TUB

IXYS

SICFET N-CH 1.2KV 90A TO268AA

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4V @ 15mA
• Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
• Vgs (Max): +20V, -5V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268AA (D3Pak-HV)
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

Paquete: -

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N3175HE160

IXYS

SCR 1.6KV 6310A W80

• Voltage - Off State: 1.6 kV
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 1.2 V
• Current - On State (It (AV)) (Max): 3175 A
• Current - On State (It (RMS)) (Max): 6310 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 50000A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AF
• Supplier Device Package: W80

Paquete: -

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