IXYS Productos

IXGT40N120B2D1

IXYS

IGBT 1200V 75A 380W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 40A
• Power - Max: 380W
• Switching Energy: 4.5mJ (on), 3mJ (off)
• Input Type: Standard
• Gate Charge: 138nC
• Td (on/off) @ 25°C: 21ns/290ns
• Test Condition: 960V, 40A, 2 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

VKI75-06P1

IXYS

MOD IGBT H-BRIDGE 600V ECO-PAC2

• IGBT Type: NPT
• Configuration: Full Bridge Inverter
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 69A
• Power - Max: 208W
• Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 75A
• Current - Collector Cutoff (Max): 800µA
• Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC2
• Supplier Device Package: ECO-PAC2

Paquete: ECO-PAC2

IXTA240N055T7

IXYS

MOSFET N-CH 55V 240A TO-263-7

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 480W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7 (IXTA..7)
• Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

Paquete: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

IXTX120P20T

IXYS

MOSFET P-CH 200V 120A PLUS247

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 740nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 73000pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 30 mOhm @ 60A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

Paquete: TO-247-3

IXFK52N30Q

IXYS

MOSFET N-CH 300V 52A TO-264AA

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 60 mOhm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-264AA (IXFK)
• Package / Case: TO-264-3, TO-264AA

Paquete: TO-264-3, TO-264AA

IXTP5N50P

IXYS

MOSFET N-CH 500V 4.8A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 12.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 620pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 89W (Tc)
• Rds On (Max) @ Id, Vgs: 1.4 Ohm @ 2.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

Paquete: TO-220-3

IXFX120N30T

IXYS

MOSFET N-CH 300V 120A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 960W (Tc)
• Rds On (Max) @ Id, Vgs: 24 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

Paquete: TO-247-3

IXFX32N80Q3

IXYS

MOSFET N-CH 800V 32A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 6.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6940pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 1000W (Tc)
• Rds On (Max) @ Id, Vgs: 270 mOhm @ 16A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

Paquete: TO-247-3

MCK700-14IO1W

IXYS

SCR THYRISTOR CA 1400V WC-500

• Structure: Common Cathode - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 700A
• Current - On State (It (RMS)) (Max): 1331A
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 18200 @ 50MHz
• Current - Hold (Ih) (Max): -
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: WC-500

Paquete: WC-500

VVZ175-14IO7

IXYS

RECT BRIDGE 3PH 167A 1400V PWSE2

• Structure: Bridge, 3-Phase - SCRs/Diodes
• Number of SCRs, Diodes: 3 SCRs, 3 Diodes
• Voltage - Off State: 1400V
• Current - On State (It (AV)) (Max): 167A
• Current - On State (It (RMS)) (Max): 89A
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 100mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1500A, 1600A
• Current - Hold (Ih) (Max): 200mA
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-E2

Paquete: PWS-E2

MCC250-08IO1

IXYS

MOD THYRISTOR DUAL 800V Y2-DCB

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 800V
• Current - On State (It (AV)) (Max): 287A
• Current - On State (It (RMS)) (Max): 450A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A, 9600A
• Current - Hold (Ih) (Max): 150mA
• Operating Temperature: -40°C ~ 140°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Y2-DCB

Paquete: Y2-DCB

VVY40-16IO1

IXYS

MODULE THYRISTOR 1600V V1 PAC

• Structure: Bridge, 3-Phase - SCRs/Diodes
• Number of SCRs, Diodes: 2 SCRs, 4 Diodes
• Voltage - Off State: 1600V
• Current - On State (It (AV)) (Max): 34A
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 320A @ 50Hz
• Current - Hold (Ih) (Max): -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Package / Case: Module

Paquete: Module

DPG10I300PA

IXYS

DIODE GEN PURP 300V 10A TO220AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.27V @ 10A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 1µA @ 300V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: TO-220-2
• Supplier Device Package: TO-220AC
• Operating Temperature - Junction: -55°C ~ 175°C

Paquete: TO-220-2

DSEI2X61-10P

IXYS

DIODE MODULE 1KV 60A ECO-PAC1

• Diode Configuration: 2 Independent
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000V
• Current - Average Rectified (Io) (per Diode): 60A
• Voltage - Forward (Vf) (Max) @ If: 2.3V @ 60A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 3mA @ 1000V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: ECO-PAC1
• Supplier Device Package: ECO-PAC1

Paquete: ECO-PAC1

HTZ240F14K

IXYS

DIODE MODULE 14KV 1.7A

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 14000V
• Current - Average Rectified (Io) (per Diode): 1.7A
• Voltage - Forward (Vf) (Max) @ If: 10V @ 2A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500µA @ 14000V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

Paquete: Module

MDD95-14N1B

IXYS

DIODE MODULE 1.4KV 120A TO240AA

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io) (per Diode): 120A
• Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 1400V
• Operating Temperature - Junction: -
• Mounting Type: Chassis Mount
• Package / Case: TO-240AA
• Supplier Device Package: TO-240AA

Paquete: TO-240AA

DSP25-12AT

IXYS

DIODE ARRAY GP 1200V 28A TO268AA

• Diode Configuration: 1 Pair Series Connection
• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200V
• Current - Average Rectified (Io) (per Diode): 28A
• Voltage - Forward (Vf) (Max) @ If: 1.6V @ 55A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 2mA @ 1200V
• Operating Temperature - Junction: -40°C ~ 180°C
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268AA

Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

VUO35-18NO7

IXYS

RECT BRIDGE 3PH 38A 1800V PWS-A

• Diode Type: Three Phase
• Technology: Standard
• Voltage - Peak Reverse (Max): 1800V
• Current - Average Rectified (Io): 38A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 15A
• Current - Reverse Leakage @ Vr: 40µA @ 1800V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: PWS-A
• Supplier Device Package: PWS-A

Paquete: PWS-A

IXD611S7

IXYS

IC DRVR HALF BRIDGE 600MA 14SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 35 V
• Logic Voltage - VIL, VIH: 2.4V, 2.7V
• Current - Peak Output (Source, Sink): 600mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 28ns, 18ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 14-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 14-SOIC

Paquete: 14-SOIC (0.154", 3.90mm Width)

IXCY40M45A

IXYS

IC CURRENT REGULATOR DPAK

• Function: Current Regulator
• Sensing Method: -
• Accuracy: -
• Voltage - Input: -
• Current - Output: 40mA
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252AA

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

CLA20EF1200PZ-TRL

IXYS

SCR 1.2KV 35A TO263

• Voltage - Off State: 1.2 kV
• Voltage - Gate Trigger (Vgt) (Max): 1.3 V
• Current - Gate Trigger (Igt) (Max): 20 mA
• Voltage - On State (Vtm) (Max): 1.4 V
• Current - On State (It (AV)) (Max): 20 A
• Current - On State (It (RMS)) (Max): 35 A
• Current - Hold (Ih) (Max): 25 mA
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 120A, 130A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV

Paquete: -

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DSI30-16AS-TRL

IXYS

DIODE GEN PURP 1.6KV 30A TO263AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1600 V
• Current - Average Rectified (Io): 30A
• Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 30 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 40 µA @ 1600 V
• Capacitance @ Vr, F: 10pF @ 400V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AA
• Operating Temperature - Junction: -40°C ~ 175°C

Paquete: -

R0736LC20K

IXYS

SCR 2KV 1490A W10

• Voltage - Off State: 2 kV
• Voltage - Gate Trigger (Vgt) (Max): 3 V
• Current - Gate Trigger (Igt) (Max): 300 mA
• Voltage - On State (Vtm) (Max): 2.7 V
• Current - On State (It (AV)) (Max): 736 A
• Current - On State (It (RMS)) (Max): 1490 A
• Current - Hold (Ih) (Max): 1 A
• Current - Off State (Max): 100 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 7500A @ 50Hz
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: TO-200AB, B-PuK
• Supplier Device Package: W10

Paquete: -

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IXFQ8N85X

IXYS

MOSFET N-CH 850V 8A TO3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 850 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 654 pF @ 25 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 200W (Tc)
• Rds On (Max) @ Id, Vgs: 850mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P
• Package / Case: TO-3P-3, SC-65-3

Paquete: -

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MCC551-12IO2

IXYS

MOD SCR THYRISTOR 1200V

• Structure: 2-Phase Controller - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.2 kV
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): 18000A
• Current - Hold (Ih) (Max): -
• Operating Temperature: 125°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

Paquete: -

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IXFK90N65X3

IXYS

MOSFET 90A 650V X3 TO264K

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

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DSEI12-12AZ-TRL

IXYS

DIODE GEN PURP 1.2KV 11A TO263HV

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1200 V
• Current - Average Rectified (Io): 11A
• Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 12 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50 ns
• Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
• Capacitance @ Vr, F: 6pF @ 600V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263HV
• Operating Temperature - Junction: -40°C ~ 150°C

Paquete: -

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IXTQ36N30P-PDP

IXYS

MOSFET N-CH 300V 36A TO3P

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

Paquete: -

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