Página 48 - Transistores - IGBT - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - IGBT - Simple

Registros 4.424
Página  48/158
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRG8B08N120KDPBF
Infineon Technologies

DIODE 1200V 8A TO-220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 15A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
  • Power - Max: 89W
  • Switching Energy: 300µJ (on), 300µJ (off)
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 20ns/160ns
  • Test Condition: 600V, 5A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias4.880
1200V
15A
15A
2V @ 15V, 5A
89W
300µJ (on), 300µJ (off)
Standard
45nC
20ns/160ns
600V, 5A, 47 Ohm, 15V
50ns
-40°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IRGP4620DPBF
Infineon Technologies

IGBT 600V 32A 140W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 36A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
  • Power - Max: 140W
  • Switching Energy: 75µJ (on), 225µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 31ns/83ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
Paquete: TO-247-3
En existencias3.744
600V
32A
36A
1.85V @ 15V, 12A
140W
75µJ (on), 225µJ (off)
Standard
25nC
31ns/83ns
400V, 12A, 22 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AC
hot GT60N321(Q)
Toshiba Semiconductor and Storage

IGBT 1000V 60A 170W TO3P LH

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 60A
  • Power - Max: 170W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 330ns/700ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 2.5µs
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3PL
  • Supplier Device Package: TO-3P(LH)
Paquete: TO-3PL
En existencias22.140
1000V
60A
120A
2.8V @ 15V, 60A
170W
-
Standard
-
330ns/700ns
-
2.5µs
150°C (TJ)
Through Hole
TO-3PL
TO-3P(LH)
IXSH40N60B
IXYS

IGBT 600V 75A 280W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 40A
  • Power - Max: 280W
  • Switching Energy: 1.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 190nC
  • Td (on/off) @ 25°C: 50ns/110ns
  • Test Condition: 480V, 40A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXSH)
Paquete: TO-247-3
En existencias4.032
600V
75A
150A
2.2V @ 15V, 40A
280W
1.8mJ (off)
Standard
190nC
50ns/110ns
480V, 40A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXSH)
STGB3NB60KDT4
STMicroelectronics

IGBT 600V 10A 50W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 24A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A
  • Power - Max: 50W
  • Switching Energy: 30µJ (on), 58µJ (off)
  • Input Type: Standard
  • Gate Charge: 14nC
  • Td (on/off) @ 25°C: 14ns/33ns
  • Test Condition: 480V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 45ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias3.424
600V
10A
24A
2.8V @ 15V, 3A
50W
30µJ (on), 58µJ (off)
Standard
14nC
14ns/33ns
480V, 3A, 10 Ohm, 15V
45ns
150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
AIKW40N65DH5XKSA1
Infineon Technologies

IC DISCRETE 650V TO247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias3.248
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
AUIRGSL4062D1
Infineon Technologies

IGBT 600V 59A 246W TO-262

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 59A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.77V @ 15V, 24A
  • Power - Max: 246W
  • Switching Energy: 532µJ (on), 311µJ (off)
  • Input Type: Standard
  • Gate Charge: 77nC
  • Td (on/off) @ 25°C: 19ns/90ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 102ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
  • Supplier Device Package: TO-262
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA
En existencias5.600
600V
59A
72A
1.77V @ 15V, 24A
246W
532µJ (on), 311µJ (off)
Standard
77nC
19ns/90ns
400V, 24A, 10 Ohm, 15V
102ns
-55°C ~ 175°C (TJ)
Through Hole
TO-262-3 Long Leads, I2Pak, TO-262AA
TO-262
IKP30N65F5XKSA1
Infineon Technologies

IGBT 650V TO220-3

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 55A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
  • Power - Max: 188W
  • Switching Energy: 280µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 19ns/170ns
  • Test Condition: 400V, 15A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 55ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: PG-TO-220-3
Paquete: TO-220-3
En existencias3.872
650V
55A
90A
2.1V @ 15V, 30A
188W
280µJ (on), 70µJ (off)
Standard
65nC
19ns/170ns
400V, 15A, 23 Ohm, 15V
55ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3
PG-TO-220-3
IRG4PH50KPBF
Infineon Technologies

IGBT 1200V 45A 200W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): 90A
  • Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 24A
  • Power - Max: 200W
  • Switching Energy: 1.21mJ (on), 2.25mJ (off)
  • Input Type: Standard
  • Gate Charge: 180nC
  • Td (on/off) @ 25°C: 36ns/200ns
  • Test Condition: 960V, 24A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
Paquete: TO-247-3
En existencias2.640
1200V
45A
90A
3.5V @ 15V, 24A
200W
1.21mJ (on), 2.25mJ (off)
Standard
180nC
36ns/200ns
960V, 24A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
AIHD15N60RATMA1
Infineon Technologies

IC DISCRETE 600V TO252-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
  • Power - Max: 250W
  • Switching Energy: 370µJ (on), 530µJ (off)
  • Input Type: Standard
  • Gate Charge: 90nC
  • Td (on/off) @ 25°C: 16ns/183ns
  • Test Condition: 400V, 15A, 15 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias6.800
600V
30A
45A
2.1V @ 15V, 15A
250W
370µJ (on), 530µJ (off)
Standard
90nC
16ns/183ns
400V, 15A, 15 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
IXGH16N170AH1
IXYS

IGBT 1700V 16A 190W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
  • Power - Max: 190W
  • Switching Energy: 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 36ns/160ns
  • Test Condition: 850V, 16A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 230ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
Paquete: TO-247-3
En existencias6.880
1700V
16A
40A
5V @ 15V, 11A
190W
900µJ (off)
Standard
65nC
36ns/160ns
850V, 16A, 10 Ohm, 15V
230ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
IXGT50N90B2D1
IXYS

IGBT 900V 75A 400W TO268

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 900V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
  • Power - Max: 400W
  • Switching Energy: 4.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 135nC
  • Td (on/off) @ 25°C: 20ns/350ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
En existencias5.072
900V
75A
-
2.7V @ 15V, 50A
400W
4.7mJ (off)
Standard
135nC
20ns/350ns
-
200ns
-
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
IXGH10N170
IXYS

IGBT 1700V 20A 110W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 70A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 10A
  • Power - Max: 110W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
Paquete: TO-247-3
En existencias4.352
1700V
20A
70A
4V @ 15V, 10A
110W
-
Standard
32nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
FGH40T65UQDF_F155
Fairchild/ON Semiconductor

650V FS4 TRENCH IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias4.704
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXYH30N65C3
IXYS

IGBT 650V 60A 270W TO247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 118A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
  • Power - Max: 270W
  • Switching Energy: 1mJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 44nC
  • Td (on/off) @ 25°C: 21ns/75ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXYH)
Paquete: TO-247-3
En existencias3.200
650V
60A
118A
2.7V @ 15V, 30A
270W
1mJ (on), 270µJ (off)
Standard
44nC
21ns/75ns
400V, 30A, 10 Ohm, 15V
-
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 (IXYH)
hot STGB19NC60KDT4
STMicroelectronics

IGBT 600V 35A 125W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 35A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 12A
  • Power - Max: 125W
  • Switching Energy: 165µJ (on), 255µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 30ns/105ns
  • Test Condition: 480V, 12A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias6.768
600V
35A
75A
2.75V @ 15V, 12A
125W
165µJ (on), 255µJ (off)
Standard
55nC
30ns/105ns
480V, 12A, 10 Ohm, 15V
31ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
FGB3245G2_F085
Fairchild/ON Semiconductor

ECOSPARK2 450V IGNITION IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 450V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: 900ns/5.4µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias3.168
450V
23A
-
1.25V @ 4V, 6A
150W
-
Logic
23nC
900ns/5.4µs
-
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
hot STGD7NB60ST4
STMicroelectronics

IGBT 600V 15A 55W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 7A
  • Power - Max: 55W
  • Switching Energy: 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 33nC
  • Td (on/off) @ 25°C: 700ns/-
  • Test Condition: 480V, 7A, 1 kOhm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias61.788
600V
15A
60A
1.6V @ 15V, 7A
55W
3.5mJ (off)
Standard
33nC
700ns/-
480V, 7A, 1 kOhm, 15V
-
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
RGTH40TS65GC11
Rohm Semiconductor

IGBT 650V 40A 144W TO-247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 20A
  • Power - Max: 144W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 40nC
  • Td (on/off) @ 25°C: 22ns/73ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
Paquete: TO-247-3
En existencias7.200
650V
40A
80A
2.1V @ 15V, 20A
144W
-
Standard
40nC
22ns/73ns
400V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
IKD03N60RFATMA1
Infineon Technologies

IGBT 600V 6.5A 53.6W TO252

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6.5A
  • Current - Collector Pulsed (Icm): 7.5A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 2.5A
  • Power - Max: 53.6W
  • Switching Energy: 50µJ (on), 40µJ (off)
  • Input Type: Standard
  • Gate Charge: 17.1nC
  • Td (on/off) @ 25°C: 10ns/128ns
  • Test Condition: 400V, 2.5A, 68 Ohm, 15V
  • Reverse Recovery Time (trr): 31ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias4.672
600V
6.5A
7.5A
2.5V @ 15V, 2.5A
53.6W
50µJ (on), 40µJ (off)
Standard
17.1nC
10ns/128ns
400V, 2.5A, 68 Ohm, 15V
31ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
PG-TO252-3
ISL9V5045S3ST_F085
Fairchild/ON Semiconductor

IGBT 480V 51A 300W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 480V
  • Current - Collector (Ic) (Max): 51A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
  • Power - Max: 300W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: -/10.8µs
  • Test Condition: 300V, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias17.232
480V
51A
-
1.6V @ 4V, 10A
300W
-
Logic
32nC
-/10.8µs
300V, 1 kOhm, 5V
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
IRG4PC30FDPBF
Infineon Technologies

IGBT 600V 31A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 630µJ (on), 1.39mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 42ns/230ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
Paquete: TO-247-3
En existencias6.832
600V
31A
120A
1.8V @ 15V, 17A
100W
630µJ (on), 1.39mJ (off)
Standard
51nC
42ns/230ns
480V, 17A, 23 Ohm, 15V
42ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
AOK40B65HQ3
Alpha & Omega Semiconductor Inc.

IGBT 40A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
  • Power - Max: 312 W
  • Switching Energy: 1.19mJ (on), 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 61 nC
  • Td (on/off) @ 25°C: 31ns/110ns
  • Test Condition: 400V, 40A, 7.5Ohm, 15V
  • Reverse Recovery Time (trr): 106 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
Paquete: -
Request a Quote
650 V
80 A
120 A
2.6V @ 15V, 40A
312 W
1.19mJ (on), 380µJ (off)
Standard
61 nC
31ns/110ns
400V, 40A, 7.5Ohm, 15V
106 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
IKQ120N120CS7XKSA1
Infineon Technologies

IGBT TRENCH FS 1200V 216A TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 216 A
  • Current - Collector Pulsed (Icm): 360 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 120A
  • Power - Max: 1004 W
  • Switching Energy: 10.3mJ (on), 5.72mJ (off)
  • Input Type: Standard
  • Gate Charge: 710 nC
  • Td (on/off) @ 25°C: 44ns/205ns
  • Test Condition: -
  • Reverse Recovery Time (trr): 205 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
Paquete: -
En existencias564
1200 V
216 A
360 A
2V @ 15V, 120A
1004 W
10.3mJ (on), 5.72mJ (off)
Standard
710 nC
44ns/205ns
-
205 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
STGWA60V60DWFAG
STMicroelectronics

AUTOMOTIVE-GRADE TRENCH FIELD-ST

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 240 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
  • Power - Max: 375 W
  • Switching Energy: 1.02mJ (on), 370µJ (off)
  • Input Type: Standard
  • Gate Charge: 314 nC
  • Td (on/off) @ 25°C: 35ns/190ns
  • Test Condition: 400V, 60A, 4.7Ohm, 15V
  • Reverse Recovery Time (trr): 200 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
Paquete: -
Request a Quote
600 V
80 A
240 A
2.3V @ 15V, 60A
375 W
1.02mJ (on), 370µJ (off)
Standard
314 nC
35ns/190ns
400V, 60A, 4.7Ohm, 15V
200 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
GT50J341-Q
Toshiba Semiconductor and Storage

PB-F IGBT / TRANSISTOR TO-3PN IC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 100 A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 50A
  • Power - Max: 200 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P(N)
Paquete: -
En existencias288
600 V
50 A
100 A
2.2V @ 15V, 50A
200 W
-
Standard
-
-
-
-
175°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P(N)
XGD8290TI
Littelfuse Inc.

IGBT N-CH 20A D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXYN300N65A3
IXYS

DISC IGBT XPT-GENX3 SOT-227B(MIN

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 470 A
  • Current - Collector Pulsed (Icm): 1600 A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 100A
  • Power - Max: 1500 W
  • Switching Energy: 7.8mJ (on), 4.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 565 nC
  • Td (on/off) @ 25°C: 42ns/190ns
  • Test Condition: 400V, 100A, 1Ohm, 15V
  • Reverse Recovery Time (trr): 125 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SOT-227-4, miniBLOC
  • Supplier Device Package: SOT-227B
Paquete: -
Request a Quote
650 V
470 A
1600 A
1.6V @ 15V, 100A
1500 W
7.8mJ (on), 4.7mJ (off)
Standard
565 nC
42ns/190ns
400V, 100A, 1Ohm, 15V
125 ns
-55°C ~ 175°C (TJ)
Chassis Mount
SOT-227-4, miniBLOC
SOT-227B