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Transistores - IGBT - Simple

Registros 4.424
Página  157/158
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGIB4640DPBF
Infineon Technologies

IGBT 600V 65A 250W TO220

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: PG-TO-220-3
Paquete: 8-PowerTDFN
En existencias4.688
600V
65A
72A
1.9V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
75nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Through Hole
8-PowerTDFN
PG-TO-220-3
IRG8CH42K10D
Infineon Technologies

IGBT 1200V 40A DIE

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
En existencias2.128
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SGW20N60HSFKSA1
Infineon Technologies

IGBT 600V 36A 178W TO247-3

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 36A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 20A
  • Power - Max: 178W
  • Switching Energy: 690µJ
  • Input Type: Standard
  • Gate Charge: 100nC
  • Td (on/off) @ 25°C: 18ns/207ns
  • Test Condition: 400V, 20A, 16 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
Paquete: TO-247-3
En existencias7.344
600V
36A
80A
3.15V @ 15V, 20A
178W
690µJ
Standard
100nC
18ns/207ns
400V, 20A, 16 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
IRGIB6B60KD116P
Infineon Technologies

IGBT 600V 11A 38W TO220FP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A
  • Power - Max: 38W
  • Switching Energy: 110µJ (on), 135µJ (off)
  • Input Type: Standard
  • Gate Charge: 18.2nC
  • Td (on/off) @ 25°C: 25ns/215ns
  • Test Condition: 400V, 5A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 70ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
Paquete: TO-220-3 Full Pack
En existencias3.312
600V
11A
22A
2.2V @ 15V, 5A
38W
110µJ (on), 135µJ (off)
Standard
18.2nC
25ns/215ns
400V, 5A, 100 Ohm, 15V
70ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
hot IRG4BC20FD-STRL
Infineon Technologies

IGBT 600V 16A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 16A
  • Current - Collector Pulsed (Icm): 64A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 9A
  • Power - Max: 60W
  • Switching Energy: 250µJ (on), 640µJ (off)
  • Input Type: Standard
  • Gate Charge: 27nC
  • Td (on/off) @ 25°C: 43ns/240ns
  • Test Condition: 480V, 9A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): 37ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias14.952
600V
16A
64A
2V @ 15V, 9A
60W
250µJ (on), 640µJ (off)
Standard
27nC
43ns/240ns
480V, 9A, 50 Ohm, 15V
37ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IXGX35N120CD1
IXYS

IGBT 1200V 70A 350W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 70A
  • Current - Collector Pulsed (Icm): 140A
  • Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 35A
  • Power - Max: 350W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: 50ns/150ns
  • Test Condition: 960V, 35A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
Paquete: TO-247-3
En existencias7.840
1200V
70A
140A
4V @ 15V, 35A
350W
3mJ (off)
Standard
170nC
50ns/150ns
960V, 35A, 5 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGP15N120C
IXYS

IGBT 1200V 30A 200W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 3.8V @ 15V, 15A
  • Power - Max: 200W
  • Switching Energy: 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 86nC
  • Td (on/off) @ 25°C: 25ns/150ns
  • Test Condition: 960V, 15A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias2.816
1200V
30A
60A
3.8V @ 15V, 15A
200W
1.05mJ (off)
Standard
86nC
25ns/150ns
960V, 15A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXGH40N60
IXYS

IGBT 600V 75A 250W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
  • Power - Max: 250W
  • Switching Energy: 3mJ (off)
  • Input Type: Standard
  • Gate Charge: 200nC
  • Td (on/off) @ 25°C: 100ns/600ns
  • Test Condition: 480V, 40A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
Paquete: TO-247-3
En existencias4.896
600V
75A
150A
2.5V @ 15V, 40A
250W
3mJ (off)
Standard
200nC
100ns/600ns
480V, 40A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot FGA70N33BTDTU
Fairchild/ON Semiconductor

IGBT 330V 149W TO3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 70A
  • Power - Max: 149W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 49nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
Paquete: TO-3P-3, SC-65-3
En existencias20.508
330V
-
220A
1.7V @ 15V, 70A
149W
-
Standard
49nC
-
-
23ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IRG8P60N120KDPBF
Infineon Technologies

IGBT 1200V 100A 420W TO-247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 420W
  • Switching Energy: 2.8mJ (on), 2.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 345nC
  • Td (on/off) @ 25°C: 40ns/240ns
  • Test Condition: 600V, 40A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 210ns
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
Paquete: TO-247-3
En existencias6.256
1200V
100A
120A
2V @ 15V, 40A
420W
2.8mJ (on), 2.3mJ (off)
Standard
345nC
40ns/240ns
600V, 40A, 5 Ohm, 15V
210ns
-40°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AC
APT70GR65B2SCD30
Microsemi Corporation

INSULATED GATE BIPOLAR TRANSISTO

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 134A
  • Current - Collector Pulsed (Icm): 260A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 70A
  • Power - Max: 595W
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: 305nC
  • Td (on/off) @ 25°C: 19ns/170ns
  • Test Condition: 433V, 70A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: T-MAX? [B2]
Paquete: TO-247-3
En existencias4.864
650V
134A
260A
2.4V @ 15V, 70A
595W
-
-
305nC
19ns/170ns
433V, 70A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
T-MAX? [B2]
IXGP4N100
IXYS

IGBT 1000V 8A 40W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 16A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 4A
  • Power - Max: 40W
  • Switching Energy: 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.6nC
  • Td (on/off) @ 25°C: 20ns/390ns
  • Test Condition: 800V, 4A, 120 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias6.752
1000V
8A
16A
2.7V @ 15V, 4A
40W
900µJ (off)
Standard
13.6nC
20ns/390ns
800V, 4A, 120 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
FGM623S
Sanken

IGBT 600V 30A 60W TO3PF

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 100A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 60W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 65nC
  • Td (on/off) @ 25°C: 100ns/300ns
  • Test Condition: 300V, 30A, 39 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3PF
Paquete: TO-3P-3 Full Pack
En existencias6.224
600V
30A
100A
1.7V @ 15V, 30A
60W
-
Standard
65nC
100ns/300ns
300V, 30A, 39 Ohm, 15V
-
150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3PF
STGWA30M65DF2
STMicroelectronics

IGBT 650V 30A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
  • Power - Max: 258W
  • Switching Energy: 300µJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 80nC
  • Td (on/off) @ 25°C: 31.6ns/115ns
  • Test Condition: 400V, 30A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 140ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 Long Leads
Paquete: TO-247-3
En existencias7.728
650V
60A
120A
2V @ 15V, 30A
258W
300µJ (on), 960µJ (off)
Standard
80nC
31.6ns/115ns
400V, 30A, 10 Ohm, 15V
140ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247 Long Leads
hot STGWT38IH130D
STMicroelectronics

IGBT 1300V 63A 250W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1300V
  • Current - Collector (Ic) (Max): 63A
  • Current - Collector Pulsed (Icm): 125A
  • Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: 3.4mJ (off)
  • Input Type: Standard
  • Gate Charge: 127nC
  • Td (on/off) @ 25°C: -/284ns
  • Test Condition: 960V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3 Full Pack
  • Supplier Device Package: TO-3P
Paquete: TO-3P-3 Full Pack
En existencias12.792
1300V
63A
125A
2.8V @ 15V, 20A
250W
3.4mJ (off)
Standard
127nC
-/284ns
960V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3 Full Pack
TO-3P
RJP60D0DPE-00#J3
Renesas Electronics America

IGBT 600V 45A 122W LDPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 22A
  • Power - Max: 122W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 45nC
  • Td (on/off) @ 25°C: 35ns/90ns
  • Test Condition: 300V, 22A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-83
  • Supplier Device Package: 4-LDPAK
Paquete: SC-83
En existencias18.516
600V
45A
-
2.2V @ 15V, 22A
122W
-
Standard
45nC
35ns/90ns
300V, 22A, 5 Ohm, 15V
-
150°C (TJ)
Surface Mount
SC-83
4-LDPAK
STGW10M65DF2
STMicroelectronics

TRENCH GATE FIELD-STOP IGBT M SE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Power - Max: 115W
  • Switching Energy: 120µJ (on), 270µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 19ns/91ns
  • Test Condition: 400V, 10A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 96ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
Paquete: TO-247-3
En existencias13.860
650V
20A
40A
2V @ 15V, 10A
115W
120µJ (on), 270µJ (off)
Standard
28nC
19ns/91ns
400V, 10A, 22 Ohm, 15V
96ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
hot STGW40V60DF
STMicroelectronics

IGBT 600V 80A 283W TO247

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
  • Power - Max: 283W
  • Switching Energy: 456µJ (on), 411µJ (off)
  • Input Type: Standard
  • Gate Charge: 226nC
  • Td (on/off) @ 25°C: 52ns/208ns
  • Test Condition: 400V, 40A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 41ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
Paquete: TO-247-3
En existencias89.724
600V
80A
160A
2.3V @ 15V, 40A
283W
456µJ (on), 411µJ (off)
Standard
226nC
52ns/208ns
400V, 40A, 10 Ohm, 15V
41ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247
FGD3325G2-F085
onsemi

IGBT 250V 41A TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 250 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 800ns/5.1µs
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
Paquete: -
Request a Quote
250 V
41 A
-
1.25V @ 4V, 6A
150 W
-
Logic
21 nC
800ns/5.1µs
-
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
FGB40T65SPD-F085
onsemi

IGBT FIELD STOP 650V 80A D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 120 A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
  • Power - Max: 267 W
  • Switching Energy: 970µJ (on), 280µJ (off)
  • Input Type: Standard
  • Gate Charge: 36 nC
  • Td (on/off) @ 25°C: 18ns/35ns
  • Test Condition: 400V, 40A, 6Ohm, 15V
  • Reverse Recovery Time (trr): 34 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
Paquete: -
Request a Quote
650 V
80 A
120 A
2.4V @ 15V, 40A
267 W
970µJ (on), 280µJ (off)
Standard
36 nC
18ns/35ns
400V, 40A, 6Ohm, 15V
34 ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
AOT10B65MQ2
Alpha & Omega Semiconductor Inc.

IGBT 10A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 20 A
  • Current - Collector Pulsed (Icm): 30 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
  • Power - Max: 150 W
  • Switching Energy: 180µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 24 nC
  • Td (on/off) @ 25°C: 12ns/91ns
  • Test Condition: 400V, 10A, 30Ohm, 15V
  • Reverse Recovery Time (trr): 106 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
Paquete: -
Request a Quote
650 V
20 A
30 A
2V @ 15V, 10A
150 W
180µJ (on), 130µJ (off)
Standard
24 nC
12ns/91ns
400V, 10A, 30Ohm, 15V
106 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
IXYP24N100C4
IXYS

IGBT DISCRETE TO-220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1000 V
  • Current - Collector (Ic) (Max): 76 A
  • Current - Collector Pulsed (Icm): 132 A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 24A
  • Power - Max: 375 W
  • Switching Energy: 3.6mJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 43 nC
  • Td (on/off) @ 25°C: 15ns/147ns
  • Test Condition: 800V, 24A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 35 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
Paquete: -
Request a Quote
1000 V
76 A
132 A
2.3V @ 15V, 24A
375 W
3.6mJ (on), 1mJ (off)
Standard
43 nC
15ns/147ns
800V, 24A, 10Ohm, 15V
35 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
RJP6065DPE-00-J3
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
RGT16TM65DGC9
Rohm Semiconductor

IGBT TRENCH FLD 650V 9A TO220NFM

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 9 A
  • Current - Collector Pulsed (Icm): 24 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 8A
  • Power - Max: 22 W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: 13ns/33ns
  • Test Condition: 400V, 8A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 42 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220NFM
Paquete: -
En existencias3.000
650 V
9 A
24 A
2.1V @ 15V, 8A
22 W
-
Standard
21 nC
13ns/33ns
400V, 8A, 10Ohm, 15V
42 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220NFM
RJP2557DPK-E
Renesas Electronics Corporation

HIGH SPEED IGBT, 270V, 50A

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRGC49B120UB
Infineon Technologies

IGBT CHIP

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 10A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Paquete: -
Request a Quote
1200 V
50 A
-
2.25V @ 15V, 10A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
FGD2736G3-F085
onsemi

IGBT 360V 21A TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 360 V
  • Current - Collector (Ic) (Max): 21 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 4.5V, 10A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 18 nC
  • Td (on/off) @ 25°C: 4µs/15µs
  • Test Condition: 14V, 10A, 1000Ohm, 5V
  • Reverse Recovery Time (trr): 7 µs
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
Paquete: -
En existencias879
360 V
21 A
-
1.65V @ 4.5V, 10A
150 W
-
Logic
18 nC
4µs/15µs
14V, 10A, 1000Ohm, 5V
7 µs
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252AA
RJH3047ADPK-80-T2
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
-
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