Transistores - IGBT - Simple

IRG4IBC30FD

Infineon Technologies

IGBT 600V 20.3A 45W TO220FP

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 20.3A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
• Power - Max: 45W
• Switching Energy: 630µJ (on), 1.39mJ (off)
• Input Type: Standard
• Gate Charge: 51nC
• Td (on/off) @ 25°C: 42ns/230ns
• Test Condition: 480V, 17A, 23 Ohm, 15V
• Reverse Recovery Time (trr): 42ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Supplier Device Package: TO-220AB Full-Pak

Paquete: TO-220-3 Full Pack

RJH65D27BDPQ-A0#T0

Renesas Electronics America

IGBT 650V

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

IXGT28N60BD1

IXYS

IGBT 600V 40A 150W TO268

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 80A
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 28A
• Power - Max: 150W
• Switching Energy: 2mJ (off)
• Input Type: Standard
• Gate Charge: 68nC
• Td (on/off) @ 25°C: 15ns/175ns
• Test Condition: 480V, 28A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 25ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

IXGP12N60CD1

IXYS

IGBT 600V 24A 100W TO220

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 24A
• Current - Collector Pulsed (Icm): 48A
• Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: 90µJ (off)
• Input Type: Standard
• Gate Charge: 32nC
• Td (on/off) @ 25°C: 20ns/60ns
• Test Condition: 480V, 12A, 18 Ohm, 15V
• Reverse Recovery Time (trr): 35ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

Paquete: TO-220-3

IXGH16N60C2D1

IXYS

IGBT 600V 40A 150W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
• Power - Max: 150W
• Switching Energy: 160µJ (on), 90µJ (off)
• Input Type: Standard
• Gate Charge: 25nC
• Td (on/off) @ 25°C: 16ns/75ns
• Test Condition: 400V, 12A, 22 Ohm, 15V
• Reverse Recovery Time (trr): 30ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

Paquete: TO-247-3

IKW40N65H5AXKSA1

Infineon Technologies

IGBT 650V 74A 255W PG-TO247-3

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 650V
• Current - Collector (Ic) (Max): 74A
• Current - Collector Pulsed (Icm): 120A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
• Power - Max: 250W
• Switching Energy: 380µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 92nC
• Td (on/off) @ 25°C: 20ns/153ns
• Test Condition: 400V, 20A, 15 Ohm, 15V
• Reverse Recovery Time (trr): 75ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

Paquete: TO-247-3

APT75GN120B2G

Microsemi Corporation

IGBT 1200V 200A 833W TMAX

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 200A
• Current - Collector Pulsed (Icm): 225A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
• Power - Max: 833W
• Switching Energy: 8045µJ (on), 7640µJ (off)
• Input Type: Standard
• Gate Charge: 425nC
• Td (on/off) @ 25°C: 60ns/620ns
• Test Condition: 800V, 75A, 1 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3 Variant
• Supplier Device Package: -

Paquete: TO-247-3 Variant

IXGR50N90B2D1

IXYS

IGBT 900V 40A 100W ISOPLUS247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 900V
• Current - Collector (Ic) (Max): 40A
• Current - Collector Pulsed (Icm): 200A
• Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 50A
• Power - Max: 100W
• Switching Energy: 4.7mJ (off)
• Input Type: Standard
• Gate Charge: 135nC
• Td (on/off) @ 25°C: 20ns/350ns
• Test Condition: 720V, 50A, 5 Ohm, 15V
• Reverse Recovery Time (trr): 200ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247?
• Supplier Device Package: ISOPLUS247?

Paquete: ISOPLUS247?

RJH60T04DPQ-A1#T0

Renesas Electronics America

IGBT TRENCH 600V 60A TO247A

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 60A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 30A
• Power - Max: 208.3W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 87nC
• Td (on/off) @ 25°C: 54ns/136ns
• Test Condition: 400V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 100ns
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247A

Paquete: TO-247-3

STGW40NC60WD

STMicroelectronics

IGBT 600V 70A 250W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 70A
• Current - Collector Pulsed (Icm): 230A
• Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
• Power - Max: 250W
• Switching Energy: 302µJ (on), 349µJ (off)
• Input Type: Standard
• Gate Charge: 126nC
• Td (on/off) @ 25°C: 33ns/168ns
• Test Condition: 390V, 30A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 45ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paquete: TO-247-3

NGTG25N120FL2WG

ON Semiconductor

IGBT 1200V 25A TO-247

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 50A
• Current - Collector Pulsed (Icm): 100A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
• Power - Max: 385W
• Switching Energy: 1.95mJ (on), 600µJ (off)
• Input Type: Standard
• Gate Charge: 178nC
• Td (on/off) @ 25°C: 87ns/179ns
• Test Condition: 600V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paquete: TO-247-3

IXGH12N120A3

IXYS

IGBT 1200V 22A 100W TO247

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 22A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 12A
• Power - Max: 100W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 20.4nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXGH)

Paquete: TO-247-3

IXBH40N160

IXYS

IGBT 1600V 33A 350W TO247AD

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1600V
• Current - Collector (Ic) (Max): 33A
• Current - Collector Pulsed (Icm): 40A
• Vce(on) (Max) @ Vge, Ic: 7.1V @ 15V, 20A
• Power - Max: 350W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 130nC
• Td (on/off) @ 25°C: -
• Test Condition: 960V, 20A, 22 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AD (IXBH)

Paquete: TO-247-3

FGH40N120ANTU

Fairchild/ON Semiconductor

IGBT 1200V 64A 417W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 64A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 40A
• Power - Max: 417W
• Switching Energy: 2.3mJ (on), 1.1mJ (off)
• Input Type: Standard
• Gate Charge: 220nC
• Td (on/off) @ 25°C: 15ns/110ns
• Test Condition: 600V, 40A, 5 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247

Paquete: TO-247-3

STGD8NC60KDT4

STMicroelectronics

IGBT 600V 15A 62W DPAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 15A
• Current - Collector Pulsed (Icm): 30A
• Vce(on) (Max) @ Vge, Ic: 2.75V @ 15V, 3A
• Power - Max: 62W
• Switching Energy: 55µJ (on), 85µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 17ns/72ns
• Test Condition: 390V, 3A, 10 Ohm, 15V
• Reverse Recovery Time (trr): 23.5ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Supplier Device Package: D-Pak

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

IRGP4068DPBF

Infineon Technologies

IGBT 600V 96A 330W TO247AC

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 96A
• Current - Collector Pulsed (Icm): 144A
• Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
• Power - Max: 330W
• Switching Energy: 1.28mJ (off)
• Input Type: Standard
• Gate Charge: 95nC
• Td (on/off) @ 25°C: -/145ns
• Test Condition: 400V, 48A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247AC

Paquete: TO-247-3

IKW15N120H3

Infineon Technologies

IGBT 1200V 30A 217W TO247-3

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 30A
• Current - Collector Pulsed (Icm): 60A
• Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
• Power - Max: 217W
• Switching Energy: 1.55mJ
• Input Type: Standard
• Gate Charge: 75nC
• Td (on/off) @ 25°C: 21ns/260ns
• Test Condition: 600V, 15A, 35 Ohm, 15V
• Reverse Recovery Time (trr): 260ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: PG-TO247-3

Paquete: TO-247-3

APT33GF120BRG

Microsemi Corporation

IGBT 1200V 52A 297W TO247

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 52A
• Current - Collector Pulsed (Icm): 104A
• Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
• Power - Max: 297W
• Switching Energy: 2.8mJ (on), 2.8mJ (off)
• Input Type: Standard
• Gate Charge: 170nC
• Td (on/off) @ 25°C: 25ns/210ns
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247 [B]

Paquete: TO-247-3

IXGT32N120A3

IXYS

IGBT 1200V 75A 300W TO268

• IGBT Type: PT
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 230A
• Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 32A
• Power - Max: 300W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 89nC
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
• Supplier Device Package: TO-268

Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

STGB40V60F

STMicroelectronics

IGBT 600V 80A 283W D2PAK

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 80A
• Current - Collector Pulsed (Icm): 160A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
• Power - Max: 283W
• Switching Energy: 456µJ (on), 411µJ (off)
• Input Type: Standard
• Gate Charge: 226nC
• Td (on/off) @ 25°C: 52ns/208ns
• Test Condition: 400V, 40A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

HGTG30N60A4

Fairchild/ON Semiconductor

IGBT 600V 75A 463W TO247

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 75A
• Current - Collector Pulsed (Icm): 240A
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 30A
• Power - Max: 463W
• Switching Energy: 280µJ (on), 240µJ (off)
• Input Type: Standard
• Gate Charge: 225nC
• Td (on/off) @ 25°C: 25ns/150ns
• Test Condition: 390V, 30A, 3 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247-3

Paquete: TO-247-3

MGY30N60D

onsemi

TRANS IGBT CHIP N-CH 600V 50A 3P

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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RGT00TS65DGC11

Rohm Semiconductor

650V 50A FIELD STOP TRENCH IGBT

• IGBT Type: Trench Field Stop
• Voltage - Collector Emitter Breakdown (Max): 650 V
• Current - Collector (Ic) (Max): 85 A
• Current - Collector Pulsed (Icm): 150 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
• Power - Max: 277 W
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 94 nC
• Td (on/off) @ 25°C: 42ns/137ns
• Test Condition: 400V, 50A, 10Ohm, 15V
• Reverse Recovery Time (trr): 54 ns
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Supplier Device Package: TO-247N

Paquete: -

IKN04N60RC2ATMA1

Infineon Technologies

IGBT 600V 7.5A SOT223-3

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 7.5 A
• Current - Collector Pulsed (Icm): 12 A
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 4A
• Power - Max: 6.8 W
• Switching Energy: 95µJ (on), 62µJ (off)
• Input Type: Standard
• Gate Charge: 24 nC
• Td (on/off) @ 25°C: 8ns/126ns
• Test Condition: 400V, 4A, 49Ohm, 15V
• Reverse Recovery Time (trr): 39 ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-3

Paquete: -

SIGC25T60UNX1SA1

Infineon Technologies

IGBT 3 CHIP 600V WAFER

• IGBT Type: NPT
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 30 A
• Current - Collector Pulsed (Icm): 90 A
• Vce(on) (Max) @ Vge, Ic: 3.15V @ 15V, 30A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: -
• Td (on/off) @ 25°C: 16ns/122ns
• Test Condition: 400V, 30A, 1.8Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

Paquete: -

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SGB15N40CLT4

onsemi

IGBT 400V D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

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AIMDQ75R140M1HXUMA1

Infineon Technologies

IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: -
• Power - Max: -
• Switching Energy: -
• Input Type: -
• Gate Charge: -
• Td (on/off) @ 25°C: -
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

Paquete: -

HGTD3N60B3S9A

Harris Corporation

7A, 600V, UFS N-CHANNEL IGBT

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 7 A
• Current - Collector Pulsed (Icm): 20 A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 3.5A
• Power - Max: 33.3 W
• Switching Energy: 66µJ (on), 88µJ (off)
• Input Type: Standard
• Gate Charge: 21 nC
• Td (on/off) @ 25°C: 18ns/105ns
• Test Condition: 480V, 3.5A, 82Ohm, 15V
• Reverse Recovery Time (trr): 16 ns
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
• Supplier Device Package: TO-252 (DPAK)

Paquete: -

Request a Quote