Página 121 - Transistores - IGBT - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - IGBT - Simple

Registros 4.424
Página  121/158
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGS4620DPBF
Infineon Technologies

IGBT 600V 32A 140W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 36A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 12A
  • Power - Max: 140W
  • Switching Energy: 75µJ (on), 225µJ (off)
  • Input Type: Standard
  • Gate Charge: 25nC
  • Td (on/off) @ 25°C: 31ns/83ns
  • Test Condition: 400V, 12A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): 68ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias5.808
600V
32A
36A
1.85V @ 15V, 12A
140W
75µJ (on), 225µJ (off)
Standard
25nC
31ns/83ns
400V, 12A, 22 Ohm, 15V
68ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
IRGP4266-EPBF
Infineon Technologies

IGBT 650V 140A 450W TO247AD

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 140A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: 450W
  • Switching Energy: 3.2mJ (on), 1.7mJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 80ns/200ns
  • Test Condition: 400V, 75A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
Paquete: TO-247-3
En existencias2.960
650V
140A
300A
2.1V @ 15V, 75A
450W
3.2mJ (on), 1.7mJ (off)
Standard
210nC
80ns/200ns
400V, 75A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247AD
hot IRGI4045DPBF
Infineon Technologies

IGBT 600V 11A 33W TO220ABFP

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 18A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 6A
  • Power - Max: 33W
  • Switching Energy: 64µJ (on), 123µJ (off)
  • Input Type: Standard
  • Gate Charge: 13nC
  • Td (on/off) @ 25°C: 26ns/73ns
  • Test Condition: 400V, 6A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 73ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220AB Full-Pak
Paquete: TO-220-3 Full Pack
En existencias15.012
600V
11A
18A
2V @ 15V, 6A
33W
64µJ (on), 123µJ (off)
Standard
13nC
26ns/73ns
400V, 6A, 47 Ohm, 15V
73ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
TO-220AB Full-Pak
IXGQ50N60C4D1
IXYS

IGBT 600V 90A 300W TO3P

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): 220A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 36A
  • Power - Max: 300W
  • Switching Energy: 950µJ (on), 840µJ (off)
  • Input Type: Standard
  • Gate Charge: 113nC
  • Td (on/off) @ 25°C: 40ns/270ns
  • Test Condition: 400V, 36A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
Paquete: TO-3P-3, SC-65-3
En existencias7.408
600V
90A
220A
2.3V @ 15V, 36A
300W
950µJ (on), 840µJ (off)
Standard
113nC
40ns/270ns
400V, 36A, 10 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IXSR50N60B
IXYS

IGBT 600V ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
Paquete: ISOPLUS247?
En existencias7.152
600V
-
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGT24N60CD1
IXYS

IGBT 600V 48A 150W TO268

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 24A
  • Power - Max: 150W
  • Switching Energy: 240µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 15ns/75ns
  • Test Condition: 480V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 25ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
Paquete: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
En existencias4.000
600V
48A
80A
2.5V @ 15V, 24A
150W
240µJ (off)
Standard
55nC
15ns/75ns
480V, 24A, 10 Ohm, 15V
25ns
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
GT10J312(Q)
Toshiba Semiconductor and Storage

IGBT 600V 10A 60W TO220SM

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
  • Power - Max: 60W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 400ns/400ns
  • Test Condition: 300V, 10A, 100 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-220SM
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias2.992
600V
10A
20A
2.7V @ 15V, 10A
60W
-
Standard
-
400ns/400ns
300V, 10A, 100 Ohm, 15V
200ns
150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-220SM
APT13GP120KG
Microsemi Corporation

IGBT 1200V 41A 250W TO220

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 41A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 3.9V @ 15V, 13A
  • Power - Max: 250W
  • Switching Energy: 114µJ (on), 165µJ (off)
  • Input Type: Standard
  • Gate Charge: 55nC
  • Td (on/off) @ 25°C: 9ns/28ns
  • Test Condition: 600V, 13A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220 [K]
Paquete: TO-220-3
En existencias3.264
1200V
41A
50A
3.9V @ 15V, 13A
250W
114µJ (on), 165µJ (off)
Standard
55nC
9ns/28ns
600V, 13A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220 [K]
IKQ50N120CH3XKSA1
Infineon Technologies

IGBT HS SW 1200V 50A TO-247-3

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 100A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 50A
  • Power - Max: 652W
  • Switching Energy: 3mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 235nC
  • Td (on/off) @ 25°C: 34ns/297ns
  • Test Condition: 600V, 50A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
Paquete: TO-247-3
En existencias5.584
1200V
100A
200A
2.35V @ 15V, 50A
652W
3mJ (on), 1.9mJ (off)
Standard
235nC
34ns/297ns
600V, 50A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IXBF20N300
IXYS

IGBT 3000V 34A 150W ISOPLUSI4

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 3000V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 20A
  • Power - Max: 150W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 105nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): 1.35µs
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: i4-Pac?-5 (3 leads)
  • Supplier Device Package: ISOPLUS i4-PAC?
Paquete: i4-Pac?-5 (3 leads)
En existencias3.712
3000V
34A
150A
3.2V @ 15V, 20A
150W
-
Standard
105nC
-
-
1.35µs
-55°C ~ 150°C (TJ)
Through Hole
i4-Pac?-5 (3 leads)
ISOPLUS i4-PAC?
IXGX32N170AH1
IXYS

IGBT 1700V 32A 350W PLUS247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
  • Power - Max: 350W
  • Switching Energy: 4.1mJ (on), 1.25mJ (off)
  • Input Type: Standard
  • Gate Charge: 157nC
  • Td (on/off) @ 25°C: 27ns/270ns
  • Test Condition: 850V, 32A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): 150ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
Paquete: TO-247-3
En existencias4.448
1700V
32A
110A
5V @ 15V, 21A
350W
4.1mJ (on), 1.25mJ (off)
Standard
157nC
27ns/270ns
850V, 32A, 2.7 Ohm, 15V
150ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
IXGR40N120B2D1
IXYS

IGBT 1200V ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
Paquete: ISOPLUS247?
En existencias4.240
1200V
-
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGP30N60C3D4
IXYS

IGBT 600V 60A 220W TO220AB

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
  • Power - Max: 220W
  • Switching Energy: 270µJ (on), 90µJ (off)
  • Input Type: Standard
  • Gate Charge: 38nC
  • Td (on/off) @ 25°C: 16ns/42ns
  • Test Condition: 300V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
Paquete: TO-220-3
En existencias3.712
600V
60A
150A
3V @ 15V, 20A
220W
270µJ (on), 90µJ (off)
Standard
38nC
16ns/42ns
300V, 20A, 5 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
hot IXGQ170N30PB
IXYS

IGBT 300V 170A 330W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Current - Collector (Ic) (Max): 170A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 85A
  • Power - Max: 330W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 143nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
Paquete: TO-3P-3, SC-65-3
En existencias4.080
300V
170A
-
1.7V @ 15V, 85A
330W
-
Standard
143nC
-
-
-
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
IKW20N60H3FKSA1
Infineon Technologies

IGBT 600V 40A 170W TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 80A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 170W
  • Switching Energy: 800µJ
  • Input Type: Standard
  • Gate Charge: 120nC
  • Td (on/off) @ 25°C: 17ns/194ns
  • Test Condition: 400V, 20A, 14.6 Ohm, 15V
  • Reverse Recovery Time (trr): 112ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
Paquete: TO-247-3
En existencias4.704
600V
40A
80A
2.4V @ 15V, 20A
170W
800µJ
Standard
120nC
17ns/194ns
400V, 20A, 14.6 Ohm, 15V
112ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot FGH20N60UFDTU
Fairchild/ON Semiconductor

IGBT 600V 40A 165W TO247

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 20A
  • Power - Max: 165W
  • Switching Energy: 380µJ (on), 260µJ (off)
  • Input Type: Standard
  • Gate Charge: 63nC
  • Td (on/off) @ 25°C: 13ns/87ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 34ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247
Paquete: TO-247-3
En existencias151.332
600V
40A
60A
2.4V @ 15V, 20A
165W
380µJ (on), 260µJ (off)
Standard
63nC
13ns/87ns
400V, 20A, 10 Ohm, 15V
34ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247
IKQ100N60TXKSA1
Infineon Technologies

IGBT 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 160A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
  • Power - Max: 714W
  • Switching Energy: 3.1mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 610nC
  • Td (on/off) @ 25°C: 30ns/290ns
  • Test Condition: 400V, 100A, 3.6 Ohm, 15V
  • Reverse Recovery Time (trr): 230ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-46
Paquete: TO-247-3
En existencias7.224
600V
160A
400A
2V @ 15V, 100A
714W
3.1mJ (on), 2.5mJ (off)
Standard
610nC
30ns/290ns
400V, 100A, 3.6 Ohm, 15V
230ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-46
IHW20N135R5XKSA1
Infineon Technologies

IGBT 1350V 40A 288W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1350V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 60A
  • Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 20A
  • Power - Max: 288W
  • Switching Energy: 950µJ (off)
  • Input Type: Standard
  • Gate Charge: 170nC
  • Td (on/off) @ 25°C: -/235ns
  • Test Condition: 600V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3
Paquete: TO-247-3
En existencias7.884
1350V
40A
60A
1.85V @ 15V, 20A
288W
950µJ (off)
Standard
170nC
-/235ns
600V, 20A, 10 Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3
hot STGW35HF60W
STMicroelectronics

IGBT 600V 60A 200W TO247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 60A
  • Current - Collector Pulsed (Icm): 150A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
  • Power - Max: 200W
  • Switching Energy: 290µJ (on), 185µJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 30ns/175ns
  • Test Condition: 400V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
Paquete: TO-247-3
En existencias390.000
600V
60A
150A
2.5V @ 15V, 20A
200W
290µJ (on), 185µJ (off)
Standard
140nC
30ns/175ns
400V, 20A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
PCFG75T65SQF
onsemi

IGBT FIELD STOP 650V WAFER

  • IGBT Type: Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 128 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Wafer
Paquete: -
Request a Quote
650 V
-
300 A
2.1V @ 15V, 75A
-
-
Standard
128 nC
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
Die
Wafer
SIGC81T60SNCX7SA1
Infineon Technologies

IGBT 3 CHIP 600V WAFER

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 100 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 100A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: 65ns/450ns
  • Test Condition: 400V, 100A, 3.3Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
Paquete: -
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600 V
100 A
300 A
2.5V @ 15V, 100A
-
-
Standard
-
65ns/450ns
400V, 100A, 3.3Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
Die
Die
SGF80N60UFTU-ON
onsemi

IGBT, 80A, 600V, N-CHANNEL

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
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RJP3047DPK-80-T2
Renesas Electronics Corporation

HIGH SPEED IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
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AIKW75N60CTE8188XKSA1
Infineon Technologies

IGBT 600V TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 75A
  • Power - Max: 428 W
  • Switching Energy: 2mJ (on), 2.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 470 nC
  • Td (on/off) @ 25°C: 33ns/330ns
  • Test Condition: 400V, 75A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 121 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-41
Paquete: -
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600 V
80 A
225 A
2V @ 15V, 75A
428 W
2mJ (on), 2.5mJ (off)
Standard
470 nC
33ns/330ns
400V, 75A, 5Ohm, 15V
121 ns
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-41
IKWH30N65WR5XKSA1
Infineon Technologies

IGBT TRENCH FS 650V 75A TO247-3

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 75 A
  • Current - Collector Pulsed (Icm): 90 A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 30A
  • Power - Max: 190 W
  • Switching Energy: 870µJ (on), 400µJ (off)
  • Input Type: Standard
  • Gate Charge: 133 nC
  • Td (on/off) @ 25°C: 41ns/398ns
  • Test Condition: 400V, 30A, 27Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PG-TO247-3-32
Paquete: -
En existencias504
650 V
75 A
90 A
1.7V @ 15V, 30A
190 W
870µJ (on), 400µJ (off)
Standard
133 nC
41ns/398ns
400V, 30A, 27Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
PG-TO247-3-32
FGD3040G2-SN00353
onsemi

IGBT 400V 41A TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 41 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 21 nC
  • Td (on/off) @ 25°C: -/4.8µs
  • Test Condition: 300V, 6.5A, 1kOhm, 5V
  • Reverse Recovery Time (trr): 1.9 µs
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
Paquete: -
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400 V
41 A
-
1.25V @ 4V, 6A
150 W
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Logic
21 nC
-/4.8µs
300V, 6.5A, 1kOhm, 5V
1.9 µs
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
STGW40H65DFB-4
STMicroelectronics

IGBT

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 160 A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
  • Power - Max: 283 W
  • Switching Energy: 200µJ (on), 410µJ (off)
  • Input Type: Standard
  • Gate Charge: 210 nC
  • Td (on/off) @ 25°C: 40ns/142ns
  • Test Condition: 400V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 62 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-4
  • Supplier Device Package: TO-247-4
Paquete: -
En existencias1.800
650 V
80 A
160 A
2V @ 15V, 40A
283 W
200µJ (on), 410µJ (off)
Standard
210 nC
40ns/142ns
400V, 40A, 5Ohm, 15V
62 ns
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4
TO-247-4
RJH3047DPK-80-T2
Renesas Electronics Corporation

IGBT

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
Paquete: -
Request a Quote
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