Página 948 - Transistores - FET, MOSFET - Simple | Productos semiconductores discretos

BTS247ZAKSA1

Infineon Technologies

MOSFET N-CH 55V 33A TO220-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Vgs (Max): ±20V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-5-3
Package / Case: TO-220-5 Formed Leads

Paquete: TO-220-5 Formed Leads

En existencias5.216

MOSFET (Metal Oxide)

55V

33A (Tc)

4.5V, 10V

2V @ 90µA

90nC @ 10V

1730pF @ 25V

±20V

Temperature Sensing Diode

120W (Tc)

18 mOhm @ 12A, 10V

-40°C ~ 175°C (TJ)

Through Hole

PG-TO220-5-3

TO-220-5 Formed Leads

STD3155L104T4G

ON Semiconductor

MOSFET N-CH 60V DPAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paquete: -

En existencias2.336

-

SIA419DJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 20V 12A SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs(th) (Max) @ Id: 850mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 10V
Vgs (Max): ±5V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 5.9A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SC-70-6 Single
Package / Case: PowerPAK? SC-70-6

Paquete: PowerPAK? SC-70-6

En existencias108.000

MOSFET (Metal Oxide)

20V

12A (Tc)

1.2V, 4.5V

850mV @ 250µA

29nC @ 5V

1500pF @ 10V

±5V

-

3.5W (Ta), 19W (Tc)

30 mOhm @ 5.9A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Single

PowerPAK? SC-70-6

FQP32N12V2

Fairchild/ON Semiconductor

MOSFET N-CH 120V 32A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 120V
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1860pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

Paquete: TO-220-3

En existencias5.840

MOSFET (Metal Oxide)

120V

32A (Tc)

10V

4V @ 250µA

53nC @ 10V

1860pF @ 25V

±30V

-

150W (Tc)

50 mOhm @ 16A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

FQD2N60TM

Fairchild/ON Semiconductor

MOSFET N-CH 600V 2A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Rds On (Max) @ Id, Vgs: 4.7 Ohm @ 1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

En existencias6.384

MOSFET (Metal Oxide)

600V

2A (Tc)

10V

5V @ 250µA

11nC @ 10V

350pF @ 25V

±30V

-

2.5W (Ta), 45W (Tc)

4.7 Ohm @ 1A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

STP5NK65Z

STMicroelectronics

MOSFET N-CH 650V 5A TO-220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 680pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 2.1A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

Paquete: TO-220-3

En existencias7.552

MOSFET (Metal Oxide)

650V

5A (Tc)

10V

4.5V @ 50µA

35nC @ 10V

680pF @ 25V

±30V

-

85W (Tc)

1.8 Ohm @ 2.1A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220

TO-220-3

IRFR4615PBF

Infineon Technologies

MOSFET N-CH 150V 33A D-PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 144W (Tc)
Rds On (Max) @ Id, Vgs: 42 mOhm @ 21A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63

En existencias6.640

MOSFET (Metal Oxide)

150V

33A (Tc)

10V

5V @ 100µA

26nC @ 10V

1750pF @ 50V

±20V

-

144W (Tc)

42 mOhm @ 21A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

IXFN20N120P

IXYS

MOSFET N-CH 1200V 20A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 20A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 193nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 11100pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 570 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

Paquete: SOT-227-4, miniBLOC

En existencias5.056

MOSFET (Metal Oxide)

1200V

20A

10V

6.5V @ 1mA

193nC @ 10V

11100pF @ 25V

±30V

-

595W (Tc)

570 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

TK40E10K3,S1X(S

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 40A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 84nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 10V
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 15 mOhm @ 20A, 10V
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

Paquete: TO-220-3

En existencias5.248

MOSFET (Metal Oxide)

100V

40A (Ta)

-

4V @ 1mA

84nC @ 10V

4000pF @ 10V

-

15 mOhm @ 20A, 10V

-

Through Hole

TO-220-3

STB55NF06T4

STMicroelectronics

MOSFET N-CH 60V 50A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 27.5A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

En existencias18.864

MOSFET (Metal Oxide)

60V

50A (Tc)

10V

4V @ 250µA

60nC @ 10V

1300pF @ 25V

±20V

-

110W (Tc)

18 mOhm @ 27.5A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TK34A10N1,S4X

Toshiba Semiconductor and Storage

MOSFET N-CH 100V 34A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220SIS
Package / Case: TO-220-3 Full Pack, Isolated Tab

Paquete: TO-220-3 Full Pack, Isolated Tab

En existencias5.472

MOSFET (Metal Oxide)

100V

34A (Tc)

10V

4V @ 500µA

38nC @ 10V

2600pF @ 50V

±20V

-

35W (Tc)

9.5 mOhm @ 17A, 10V

150°C (TJ)

Through Hole

TO-220SIS

TO-220-3 Full Pack, Isolated Tab

FDP8447L

Fairchild/ON Semiconductor

MOSFET N-CH 40V 12A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2500pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3

Paquete: TO-220-3

En existencias510.972

MOSFET (Metal Oxide)

40V

12A (Ta), 50A (Tc)

4.5V, 10V

3V @ 250µA

49nC @ 10V

2500pF @ 20V

±20V

-

2W (Ta), 60W (Tc)

8.7 mOhm @ 14A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220-3

DMN3024LSS-13

Diodes Incorporated

MOSFET N-CH 30V 6.4A 8SO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 24 mOhm @ 7A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias149.232

MOSFET (Metal Oxide)

30V

6.4A (Ta)

4.5V, 10V

3V @ 250µA

12.9nC @ 10V

608pF @ 15V

±20V

-

1.6W (Ta)

24 mOhm @ 7A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

CDM22012-800LRFP SL

Central Semiconductor Corp

MOSFET N-CH 800V 12A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 52.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1090pF @ 100V
Vgs (Max): 30V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 450 mOhm @ 6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack

Paquete: TO-220-3 Full Pack

En existencias9.012

MOSFET (Metal Oxide)

800V

12A (Ta)

10V

4V @ 250µA

52.4nC @ 10V

1090pF @ 100V

30V

-

40W (Tc)

450 mOhm @ 6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220FP

TO-220-3 Full Pack

SPU07N60C3

Infineon Technologies

MOSFET N-CH 650V 7.3A TO-251

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.9V @ 350µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO251-3
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

Paquete: TO-251-3 Short Leads, IPak, TO-251AA

En existencias7.152

MOSFET (Metal Oxide)

650V

7.3A (Tc)

10V

3.9V @ 350µA

27nC @ 10V

790pF @ 25V

±20V

-

83W (Tc)

600 mOhm @ 4.6A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO251-3

TO-251-3 Short Leads, IPak, TO-251AA

FDPF390N15A

Fairchild/ON Semiconductor

MOSFET N-CH 150V 15A TO-220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 150V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1285pF @ 75V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 22W (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F-3
Package / Case: TO-220-3 Full Pack

Paquete: TO-220-3 Full Pack

En existencias390.000

MOSFET (Metal Oxide)

150V

15A (Tc)

10V

4V @ 250µA

18.6nC @ 10V

1285pF @ 75V

±20V

-

22W (Tc)

40 mOhm @ 15A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220F-3

TO-220-3 Full Pack

SIA467EDJ-T1-GE3

Vishay Siliconix

MOSFET P-CH 12V 31A SC70-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 2520pF @ 6V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 19W (Tc)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 5A, 4.5V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? SC-70-6 Single
Package / Case: PowerPAK? SC-70-6

Paquete: PowerPAK? SC-70-6

En existencias22.356

MOSFET (Metal Oxide)

12V

31A (Tc)

1.8V, 4.5V

1V @ 250µA

72nC @ 8V

2520pF @ 6V

±8V

-

3.5W (Ta), 19W (Tc)

13 mOhm @ 5A, 4.5V

-50°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Single

PowerPAK? SC-70-6

SI4421DY-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 10A 8-SOIC

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 850µA
Gate Charge (Qg) (Max) @ Vgs: 125nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75 mOhm @ 14A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

Paquete: 8-SOIC (0.154", 3.90mm Width)

En existencias568.164

MOSFET (Metal Oxide)

20V

10A (Ta)

1.8V, 4.5V

800mV @ 850µA

125nC @ 4.5V

-

±8V

-

1.5W (Ta)

8.75 mOhm @ 14A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

BSS138WQ-13-F

Diodes Incorporated

BSS FAMILY SOT323 T&R 10K

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 48 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 400mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-323
Package / Case: SC-70, SOT-323

Paquete: -

Request a Quote

MOSFET (Metal Oxide)

50 V

280mA (Ta)

10V

1.5V @ 250µA

1.5 nC @ 10 V

48 pF @ 25 V

±20V

-

400mW (Ta)

3.5Ohm @ 220mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-323

SC-70, SOT-323

UJ4C075023L8SSB

Qorvo

750V/23MO,SICFET,G4,TOLL

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paquete: -

Request a Quote

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XP6NA1R4CXT

YAGEO XSEMI

FET N-CH 60V 44.6A 100A PMPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 44.6A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11520 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 113.6W (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PMPAK® 5 x 6
Package / Case: 8-PowerLDFN

Paquete: -

En existencias3.000

MOSFET (Metal Oxide)

60 V

44.6A (Ta), 100A (Tc)

6V, 10V

4V @ 250µA

195 nC @ 10 V

11520 pF @ 50 V

±20V

-

5W (Ta), 113.6W (Tc)

1.45mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PMPAK® 5 x 6

8-PowerLDFN

DMP26M1UFG-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V POWERDI3333

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5392 pF @ 10 V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 1.67W (Ta), 3W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: POWERDI3333-8
Package / Case: 8-PowerVDFN

Paquete: -

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MOSFET (Metal Oxide)

20 V

71A (Tc)

1.5V, 4.5V

1V @ 250µA

164 nC @ 10 V

5392 pF @ 10 V

±10V

-

1.67W (Ta), 3W (Tc)

5.5mOhm @ 15A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

POWERDI3333-8

8-PowerVDFN

IPA70R900P7SXKSA1

Infineon Technologies

MOSFET N-CH 700V 6A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 700 V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 60µA
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 400 V
Input Capacitance (Ciss) (Max) @ Vds: 211 pF @ 400 V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 20.5W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.1A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-FP
Package / Case: TO-220-3 Full Pack

Paquete: -

En existencias714

MOSFET (Metal Oxide)

700 V

6A (Tc)

10V

3.5V @ 60µA

6.8 nC @ 400 V

211 pF @ 400 V

±16V

-

20.5W (Tc)

900mOhm @ 1.1A, 10V

-40°C ~ 150°C (TJ)

Through Hole

PG-TO220-FP

TO-220-3 Full Pack

AO3434TS

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 3.5A SOT23-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 340 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-3
Package / Case: 3-SMD, SOT-23-3 Variant

Paquete: -

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MOSFET (Metal Oxide)

30 V

3.5A (Ta)

4.5V, 10V

1.8V @ 250µA

7.2 nC @ 10 V

340 pF @ 15 V

±20V

-

1W (Ta)

52mOhm @ 4.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-3

3-SMD, SOT-23-3 Variant

2SK1839-TL-E

onsemi

NCH 0.1A 30V MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paquete: -

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STF18N60M6

STMicroelectronics

MOSFET N-CH 600V 13A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 100 V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220FP
Package / Case: TO-220-3 Full Pack

Paquete: -

En existencias87

MOSFET (Metal Oxide)

600 V

13A (Tc)

10V

4.75V @ 250µA

16.8 nC @ 10 V

650 pF @ 100 V

±25V

-

25W (Tc)

280mOhm @ 6.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220FP

TO-220-3 Full Pack

2N7002KS-TP

Micro Commercial Co

Interface

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 340mA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 350mW
Rds On (Max) @ Id, Vgs: 2.2Ohm @ 300mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

Paquete: -

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MOSFET (Metal Oxide)

60 V

340mA

4.5V, 10V

2.5V @ 250µA

1.7 nC @ 10 V

27 pF @ 30 V

±20V

-

350mW

2.2Ohm @ 300mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

RJK2017DPP-B1-T2F

Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

Paquete: -

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