Página 847 - Transistores - FET, MOSFET - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simple

Registros 42.029
Página  847/1.502
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BUK9511-55A,127
Nexperia USA Inc.

MOSFET N-CH 55V 75A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 4230pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 166W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias4.784
MOSFET (Metal Oxide)
55V
75A (Tc)
4.5V, 10V
2V @ 1mA
-
4230pF @ 25V
±10V
-
166W (Tc)
10 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FQI12N60TU
Fairchild/ON Semiconductor

MOSFET N-CH 600V 10.5A I2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
  • Rds On (Max) @ Id, Vgs: 700 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I2PAK
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Paquete: TO-262-3 Long Leads, I2Pak, TO-262AA
En existencias7.024
MOSFET (Metal Oxide)
600V
10.5A (Tc)
10V
5V @ 250µA
54nC @ 10V
1900pF @ 25V
±30V
-
3.13W (Ta), 180W (Tc)
700 mOhm @ 5.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I2PAK
TO-262-3 Long Leads, I2Pak, TO-262AA
FQP44N08
Fairchild/ON Semiconductor

MOSFET N-CH 80V 44A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 127W (Tc)
  • Rds On (Max) @ Id, Vgs: 34 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias3.376
MOSFET (Metal Oxide)
80V
44A (Tc)
10V
4V @ 250µA
50nC @ 10V
1430pF @ 25V
±25V
-
127W (Tc)
34 mOhm @ 22A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220-3
STD150N2LH5
STMicroelectronics

MOSFET N-CH DPAK

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
En existencias7.008
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXKG25N80C
IXYS

MOSFET N-CH 800V 25A ISO264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 166nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ISO264?
  • Package / Case: ISO264?
Paquete: ISO264?
En existencias5.872
MOSFET (Metal Oxide)
800V
25A (Tc)
10V
4V @ 2mA
166nC @ 10V
-
±20V
-
250W (Tc)
150 mOhm @ 9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ISO264?
ISO264?
VS-FA40SA50LC
Vishay Semiconductor Diodes Division

MOSFET N-CH 500V 40A SOT-227

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 420nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 543W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 23A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227
  • Package / Case: SOT-227-4, miniBLOC
Paquete: SOT-227-4, miniBLOC
En existencias3.904
MOSFET (Metal Oxide)
500V
40A
10V
4V @ 250µA
420nC @ 10V
6900pF @ 25V
±20V
-
543W (Tc)
130 mOhm @ 23A, 10V
-55°C ~ 150°C (TJ)
Chassis Mount
SOT-227
SOT-227-4, miniBLOC
RJK6012DPE-00#J3
Renesas Electronics America

MOSFET N-CH 600V 10A LDPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 920 mOhm @ 5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 4-LDPAK
  • Package / Case: SC-83
Paquete: SC-83
En existencias4.064
MOSFET (Metal Oxide)
600V
10A (Ta)
10V
-
30nC @ 10V
1100pF @ 25V
±30V
-
100W (Tc)
920 mOhm @ 5A, 10V
150°C (TJ)
Surface Mount
4-LDPAK
SC-83
hot IRFR430ATRLPBF
Vishay Siliconix

MOSFET N-CH 500V 5A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 Ohm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias44.364
MOSFET (Metal Oxide)
500V
5A (Tc)
10V
4.5V @ 250µA
24nC @ 10V
490pF @ 25V
±30V
-
110W (Tc)
1.7 Ohm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF540ZPBF
Infineon Technologies

MOSFET N-CH 100V 36A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 92W (Tc)
  • Rds On (Max) @ Id, Vgs: 26.5 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias12.732
MOSFET (Metal Oxide)
100V
36A (Tc)
10V
4V @ 250µA
63nC @ 10V
1770pF @ 25V
±20V
-
92W (Tc)
26.5 mOhm @ 22A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot FDMS86350
Fairchild/ON Semiconductor

MOSFET N-CH 80V 80A POWER56

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 155nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10680pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: Power56
  • Package / Case: 8-PowerTDFN
Paquete: 8-PowerTDFN
En existencias112.056
MOSFET (Metal Oxide)
80V
25A (Ta), 130A (Tc)
8V, 10V
4.5V @ 250µA
155nC @ 10V
10680pF @ 40V
±20V
-
2.7W (Ta), 156W (Tc)
2.4 mOhm @ 25A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
Power56
8-PowerTDFN
PHP45NQ11T,127
Nexperia USA Inc.

MOSFET N-CH 105V 47A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 105V
  • Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2930pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias21.084
MOSFET (Metal Oxide)
105V
47A (Tc)
10V
4V @ 1mA
60nC @ 10V
2930pF @ 25V
±20V
-
150W (Tc)
25 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SFT1446-TL-H
ON Semiconductor

MOSFET N-CH 60V 20A TP-FA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 20V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta), 23W (Tc)
  • Rds On (Max) @ Id, Vgs: 51 mOhm @ 10A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TP-FA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias90.396
MOSFET (Metal Oxide)
60V
20A (Ta)
4V, 10V
2.6V @ 1mA
16nC @ 10V
750pF @ 20V
±20V
-
1W (Ta), 23W (Tc)
51 mOhm @ 10A, 10V
150°C (TJ)
Surface Mount
TP-FA
TO-252-3, DPak (2 Leads + Tab), SC-63
hot IRF6636TRPBF
Infineon Technologies

MOSFET N-CH 20V 18A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 81A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.45V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.2W (Ta), 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.5 mOhm @ 18A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? ST
  • Package / Case: DirectFET? Isometric ST
Paquete: DirectFET? Isometric ST
En existencias18.228
MOSFET (Metal Oxide)
20V
18A (Ta), 81A (Tc)
4.5V, 10V
2.45V @ 250µA
27nC @ 4.5V
2420pF @ 10V
±20V
-
2.2W (Ta), 42W (Tc)
4.5 mOhm @ 18A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DIRECTFET? ST
DirectFET? Isometric ST
hot IRFB7430PBF
Infineon Technologies

MOSFET N CH 40V 195A TO220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 460nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14240pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 375W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.3 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias191.220
MOSFET (Metal Oxide)
40V
195A (Tc)
6V, 10V
3.9V @ 250µA
460nC @ 10V
14240pF @ 25V
±20V
-
375W (Tc)
1.3 mOhm @ 100A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
STL300N4LF8
STMicroelectronics

POWER FLAT 8L 6X5X1 P1.27

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRF9Z34PBF-BE3
Vishay Siliconix

MOSFET P-CH 60V 18A TO220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 88W (Tc)
  • Rds On (Max) @ Id, Vgs: 140mOhm @ 11A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: -
En existencias141
MOSFET (Metal Oxide)
60 V
18A (Tc)
-
4V @ 250µA
34 nC @ 10 V
1100 pF @ 25 V
±20V
-
88W (Tc)
140mOhm @ 11A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
AON6324
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 85A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2719 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 83W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (5x6)
  • Package / Case: 8-PowerVDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
30 V
85A (Tc)
4.5V, 10V
2.1V @ 250µA
28 nC @ 4.5 V
2719 pF @ 15 V
±20V
-
83W (Tc)
2.1mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (5x6)
8-PowerVDFN
IMZA65R040M2HXKSA1
Infineon Technologies

SILICON CARBIDE MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
NTH4L020N120SC1
onsemi

SICFET N-CH 1200V 102A TO247

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 20mA
  • Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2943 pF @ 800 V
  • Vgs (Max): +25V, -15V
  • FET Feature: -
  • Power Dissipation (Max): 510W (Tc)
  • Rds On (Max) @ Id, Vgs: 28mOhm @ 60A, 20V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4
Paquete: -
En existencias1.248
SiCFET (Silicon Carbide)
1200 V
102A (Tc)
20V
4.3V @ 20mA
220 nC @ 20 V
2943 pF @ 800 V
+25V, -15V
-
510W (Tc)
28mOhm @ 60A, 20V
-55°C ~ 175°C (TJ)
Through Hole
TO-247-4L
TO-247-4
RJK03B9DPA-00-J5A
Renesas Electronics Corporation

MOSFET N-CH 30V 30A 8WPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1110 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 10.6mOhm @ 15A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WPAK
  • Package / Case: 8-PowerWDFN
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
30 V
30A (Ta)
-
-
7.4 nC @ 4.5 V
1110 pF @ 10 V
-
-
25W (Tc)
10.6mOhm @ 15A, 10V
150°C (TJ)
Surface Mount
8-WPAK
8-PowerWDFN
SIA4446DJ-T1-GE3
Vishay Siliconix

N-CHANNEL 40 V (D-S) MOSFET POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 915 pF @ 20 V
  • Vgs (Max): +20V, -16V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 19.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SC-70-6 Dual
  • Package / Case: PowerPAK® SC-70-6 Dual
Paquete: -
En existencias9.012
MOSFET (Metal Oxide)
40 V
13A (Ta), 31A (Tc)
4.5V, 10V
2.4V @ 250µA
19 nC @ 10 V
915 pF @ 20 V
+20V, -16V
-
3.5W (Ta), 19.2W (Tc)
11mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SC-70-6 Dual
PowerPAK® SC-70-6 Dual
2SK3573-AZ
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SQJ420EP-T1_BE3
Vishay Siliconix

N-CHANNEL 40-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 9.7A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
Paquete: -
En existencias17.322
MOSFET (Metal Oxide)
40 V
30A (Tc)
4.5V, 10V
2.5V @ 250µA
41 nC @ 10 V
1860 pF @ 25 V
±20V
-
45W (Tc)
10mOhm @ 9.7A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
NTBG045N065SC1
onsemi

SILICON CARBIDE MOSFET, NCHANNEL

  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 650 V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
  • Vgs(th) (Max) @ Id: 4.3V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
  • Vgs (Max): +22V, -8V
  • FET Feature: -
  • Power Dissipation (Max): 242W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK-7
  • Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Paquete: -
En existencias1.845
SiCFET (Silicon Carbide)
650 V
62A (Tc)
15V, 18V
4.3V @ 8mA
105 nC @ 18 V
1890 pF @ 325 V
+22V, -8V
-
242W (Tc)
50mOhm @ 25A, 18V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK-7
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
QM3404K-ML
MOSLEADER

Single N 30V 3.9A SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
CPH3426-TL-E
onsemi

NCH 4V DRIVE SERIES

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UPA2720GR-E1-A
Renesas Electronics Corporation

MOSFET N-CH 30V 14A 8PSOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 10 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 6.6mOhm @ 7A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PSOP
  • Package / Case: 8-SOIC (0.173", 4.40mm Width)
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
30 V
14A (Ta)
-
2.5V @ 1mA
27 nC @ 5 V
2800 pF @ 10 V
-
-
-
6.6mOhm @ 7A, 10V
-
Surface Mount
8-PSOP
8-SOIC (0.173", 4.40mm Width)
RD3T050CNTL1
Rohm Semiconductor

MOSFET N-CH 200V 5A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.25V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29W (Tc)
  • Rds On (Max) @ Id, Vgs: 760mOhm @ 2.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paquete: -
En existencias6.042
MOSFET (Metal Oxide)
200 V
5A (Tc)
10V
5.25V @ 1mA
8.3 nC @ 10 V
330 pF @ 25 V
±30V
-
29W (Tc)
760mOhm @ 2.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252
TO-252-3, DPAK (2 Leads + Tab), SC-63