Página 183 - Transistores - FET, MOSFET - Simple | Productos semiconductores discretos | Heisener Electronics
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Transistores - FET, MOSFET - Simple

Registros 42.029
Página  183/1.502
Imagen
Nº de pieza
Fabricantes
Descripción
Paquete
En existencias
Cantidad
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
AUIRLS4030
Infineon Technologies

MOSFET N-CH 100V 180A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 11360pF @ 50V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 370W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.3 mOhm @ 110A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias3.584
MOSFET (Metal Oxide)
100V
180A (Tc)
4.5V, 10V
2.5V @ 250µA
130nC @ 4.5V
11360pF @ 50V
±16V
-
370W (Tc)
4.3 mOhm @ 110A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRFB4215PBF
Infineon Technologies

MOSFET N-CH 60V 115A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 115A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4080pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 270W (Tc)
  • Rds On (Max) @ Id, Vgs: 9 mOhm @ 54A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias2.000
MOSFET (Metal Oxide)
60V
115A (Tc)
10V
4V @ 250µA
170nC @ 10V
4080pF @ 25V
±20V
-
270W (Tc)
9 mOhm @ 54A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRF7204
Infineon Technologies

MOSFET P-CH 20V 5.3A 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 860pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Tc)
  • Rds On (Max) @ Id, Vgs: 60 mOhm @ 5.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
Paquete: 8-SOIC (0.154", 3.90mm Width)
En existencias267.324
MOSFET (Metal Oxide)
20V
5.3A (Ta)
4.5V, 10V
2.5V @ 250µA
25nC @ 10V
860pF @ 10V
±12V
-
2.5W (Tc)
60 mOhm @ 5.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
AON7526
Alpha & Omega Semiconductor Inc.

MOSFET N-CH

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
En existencias3.296
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SUP60N06-12P-E3
Vishay Siliconix

MOSFET N-CH 60V 60A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1970pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.25W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias6.288
MOSFET (Metal Oxide)
60V
60A (Tc)
10V
4.5V @ 250µA
55nC @ 10V
1970pF @ 30V
±20V
-
3.25W (Ta), 100W (Tc)
12 mOhm @ 30A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot SI7388DP-T1-E3
Vishay Siliconix

MOSFET N-CH 30V 12A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.9W (Ta)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 19A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
Paquete: PowerPAK? SO-8
En existencias94.332
MOSFET (Metal Oxide)
30V
12A (Ta)
4.5V, 10V
1.6V @ 250µA
24nC @ 5V
-
±20V
-
1.9W (Ta)
7 mOhm @ 19A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
IRFU220BTU_FP001
Fairchild/ON Semiconductor

MOSFET N-CH 200V 4.6A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 800 mOhm @ 2.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Paquete: TO-251-3 Short Leads, IPak, TO-251AA
En existencias3.744
MOSFET (Metal Oxide)
200V
4.6A (Tc)
10V
4V @ 250µA
16nC @ 10V
390pF @ 25V
±30V
-
2.5W (Ta), 40W (Tc)
800 mOhm @ 2.3A, 10V
-55°C ~ 150°C (TJ)
Through Hole
I-Pak
TO-251-3 Short Leads, IPak, TO-251AA
FQB6N90TM_AM002
Fairchild/ON Semiconductor

MOSFET N-CH 900V 5.8A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1880pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 3.13W (Ta), 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 2.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK (TO-263AB)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias6.160
MOSFET (Metal Oxide)
900V
5.8A (Tc)
10V
5V @ 250µA
52nC @ 10V
1880pF @ 25V
±30V
-
3.13W (Ta), 167W (Tc)
1.9 Ohm @ 2.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
D2PAK (TO-263AB)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
FQPF2N40
Fairchild/ON Semiconductor

MOSFET N-CH 400V 1.1A TO-220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 400V
  • Current - Continuous Drain (Id) @ 25°C: 1.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 16W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.8 Ohm @ 550mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F
  • Package / Case: TO-220-3 Full Pack
Paquete: TO-220-3 Full Pack
En existencias3.440
MOSFET (Metal Oxide)
400V
1.1A (Tc)
10V
5V @ 250µA
5.5nC @ 10V
150pF @ 25V
±30V
-
16W (Tc)
5.8 Ohm @ 550mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F
TO-220-3 Full Pack
FDD2512
Fairchild/ON Semiconductor

MOSFET N-CH 150V 6.7A D-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 344pF @ 75V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Ta)
  • Rds On (Max) @ Id, Vgs: 420 mOhm @ 2.2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias4.640
MOSFET (Metal Oxide)
150V
6.7A (Ta)
6V, 10V
4V @ 250µA
11nC @ 10V
344pF @ 75V
±20V
-
42W (Ta)
420 mOhm @ 2.2A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252
TO-252-3, DPak (2 Leads + Tab), SC-63
hot STB16NM50N
STMicroelectronics

MOSFET N-CH 500V 15A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 7.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias7.008
MOSFET (Metal Oxide)
500V
15A (Tc)
10V
4V @ 250µA
38nC @ 10V
1200pF @ 50V
±25V
-
125W (Tc)
260 mOhm @ 7.5A, 10V
150°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IPC60R3K3C6X1SA1
Infineon Technologies

MOSFET N-CH BARE DIE

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
En existencias7.792
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IXFK24N90Q
IXYS

MOSFET N-CH 900V 24A TO-264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 900V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 450 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-264AA (IXFK)
  • Package / Case: TO-264-3, TO-264AA
Paquete: TO-264-3, TO-264AA
En existencias5.856
MOSFET (Metal Oxide)
900V
24A (Tc)
10V
4.5V @ 4mA
170nC @ 10V
5900pF @ 25V
±20V
-
500W (Tc)
450 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-264AA (IXFK)
TO-264-3, TO-264AA
IXTQ26P20P
IXYS

MOSFET P-CH 200V 26A TO-3P

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2740pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 170 mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paquete: TO-3P-3, SC-65-3
En existencias7.200
MOSFET (Metal Oxide)
200V
26A (Tc)
10V
4V @ 250µA
56nC @ 10V
2740pF @ 25V
±20V
-
300W (Tc)
170 mOhm @ 13A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
FCPF9N60NTYDTU
Fairchild/ON Semiconductor

MOSFET N-CH 600V 9A TO220F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1240pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 29.8W (Tc)
  • Rds On (Max) @ Id, Vgs: 385 mOhm @ 4.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220F-3 (Y-Forming)
  • Package / Case: TO-220-3 Full Pack, Formed Leads
Paquete: TO-220-3 Full Pack, Formed Leads
En existencias6.928
MOSFET (Metal Oxide)
600V
9A (Tc)
10V
4V @ 250µA
29nC @ 10V
1240pF @ 100V
±30V
-
29.8W (Tc)
385 mOhm @ 4.5A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220F-3 (Y-Forming)
TO-220-3 Full Pack, Formed Leads
IRL510SPBF
Vishay Siliconix

MOSFET N-CH 100V 5.6A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 3.4A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
En existencias4.528
MOSFET (Metal Oxide)
100V
5.6A (Tc)
4V, 5V
2V @ 250µA
6.1nC @ 5V
250pF @ 25V
±10V
-
3.7W (Ta), 43W (Tc)
540 mOhm @ 3.4A, 5V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
PMXB43UNEZ
Nexperia USA Inc.

MOSFET N-CH 20V 3.2A DFN1010D-3G

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 551pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 400mW (Ta), 8.33W (Tc)
  • Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DFN1010D-3
  • Package / Case: 3-XDFN Exposed Pad
Paquete: 3-XDFN Exposed Pad
En existencias3.776
MOSFET (Metal Oxide)
20V
3.2A (Ta)
1.5V, 4.5V
900mV @ 250µA
10nC @ 4.5V
551pF @ 10V
±8V
-
400mW (Ta), 8.33W (Tc)
54 mOhm @ 3.2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
DFN1010D-3
3-XDFN Exposed Pad
IXTP8N65X2
IXYS

MOSFET N-CH 650V 8A X2 TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 500 mOhm @ 4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220
  • Package / Case: TO-220-3
Paquete: TO-220-3
En existencias4.160
MOSFET (Metal Oxide)
650V
8A (Tc)
10V
5V @ 250µA
12nC @ 10V
800pF @ 25V
±30V
-
150W (Tc)
500 mOhm @ 4A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220
TO-220-3
hot AON7446
Alpha & Omega Semiconductor Inc.

MOSFET N-CH 60V 3.3A 8DFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta), 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 285pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 16.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 145 mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-DFN (3x3)
  • Package / Case: 8-PowerSMD, Flat Leads
Paquete: 8-PowerSMD, Flat Leads
En existencias180.000
MOSFET (Metal Oxide)
60V
3.3A (Ta), 8A (Tc)
7V, 10V
3.3V @ 250µA
5.3nC @ 10V
285pF @ 30V
±20V
-
3.1W (Ta), 16.7W (Tc)
145 mOhm @ 3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-DFN (3x3)
8-PowerSMD, Flat Leads
FDMC86265P
Fairchild/ON Semiconductor

MOSFET P-CH 150V 1A MLP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta), 1.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 75V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 16W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 1A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-MLP (3.3x3.3), Power33
  • Package / Case: 8-PowerWDFN
Paquete: 8-PowerWDFN
En existencias2.400
MOSFET (Metal Oxide)
150V
1A (Ta), 1.8A (Tc)
6V, 10V
4V @ 250µA
4nC @ 10V
210pF @ 75V
±25V
-
2.3W (Ta), 16W (Tc)
1.2 Ohm @ 1A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-MLP (3.3x3.3), Power33
8-PowerWDFN
DMN10H220L-13
Diodes Incorporated

MOSFET N-CH 100V 1.6A SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 401pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 1.3W (Ta)
  • Rds On (Max) @ Id, Vgs: 220 mOhm @ 1.6A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
Paquete: TO-236-3, SC-59, SOT-23-3
En existencias95.730
MOSFET (Metal Oxide)
100V
1.4A (Ta)
4.5V, 10V
2.5V @ 250µA
8.3nC @ 10V
401pF @ 25V
±16V
-
1.3W (Ta)
220 mOhm @ 1.6A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
hot RFD16N05SM9A
Fairchild/ON Semiconductor

MOSFET N-CH 50V 16A TO-252AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 72W (Tc)
  • Rds On (Max) @ Id, Vgs: 47 mOhm @ 16A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63
En existencias444.636
MOSFET (Metal Oxide)
50V
16A (Tc)
10V
4V @ 250µA
80nC @ 20V
900pF @ 25V
±20V
-
72W (Tc)
47 mOhm @ 16A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPak (2 Leads + Tab), SC-63
R6020ANZ8U7C8
Rohm Semiconductor

MOSFET N-CH 600V 20A TO3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.15V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 220mOhm @ 10A, 10V
  • Operating Temperature: 150°C
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PF
  • Package / Case: TO-3P-3 Full Pack
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
600 V
20A (Tc)
10V
4.15V @ 1mA
65 nC @ 10 V
2040 pF @ 25 V
±30V
-
120W (Tc)
220mOhm @ 10A, 10V
150°C
Through Hole
TO-3PF
TO-3P-3 Full Pack
NTND31215CZTAG
onsemi

NTND31215 - COMPLEMENTARY, SMALL

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
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-
-
-
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-
-
-
-
-
-
-
-
-
RS1E220ATTB1
Rohm Semiconductor

MOSFET P-CH 30V 22A/76A 8HSOP

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5850 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 4.1mOhm @ 22A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-HSOP
  • Package / Case: 8-PowerTDFN
Paquete: -
En existencias32.019
MOSFET (Metal Oxide)
30 V
22A (Ta), 76A (Tc)
4.5V, 10V
2.5V @ 2mA
130 nC @ 10 V
5850 pF @ 15 V
±20V
-
3W (Ta)
4.1mOhm @ 22A, 10V
150°C (TJ)
Surface Mount
8-HSOP
8-PowerTDFN
IXTY1R4N120PHV
IXYS

MOSFET N-CH 1200V 1.4A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 86W (Tc)
  • Rds On (Max) @ Id, Vgs: 13Ohm @ 700mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
1200 V
1.4A (Tc)
10V
4.5V @ 100µA
24.8 nC @ 10 V
666 pF @ 25 V
±30V
-
86W (Tc)
13Ohm @ 700mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252AA
TO-252-3, DPAK (2 Leads + Tab), SC-63
IXTQ130N20T
IXYS

MOSFET N-CH 200V 130A TO3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 830W (Tc)
  • Rds On (Max) @ Id, Vgs: 16mOhm @ 65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3P
  • Package / Case: TO-3P-3, SC-65-3
Paquete: -
Request a Quote
MOSFET (Metal Oxide)
200 V
130A (Tc)
10V
5V @ 1mA
150 nC @ 10 V
8800 pF @ 25 V
±20V
-
830W (Tc)
16mOhm @ 65A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3P
TO-3P-3, SC-65-3
2SJ135-AZ
Renesas Electronics Corporation

P-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
Paquete: -
Request a Quote
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