Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N CH 40V 90A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias390.396 |
|
MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 3.9V @ 100µA | 134nC @ 10V | 4610pF @ 25V | ±20V | - | 140W (Tc) | 2.4 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Renesas Electronics America |
MOSFET N-CH 40V 82A TO-263
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias3.792 |
|
MOSFET (Metal Oxide) | 40V | 82A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 150nC @ 10V | 9000pF @ 25V | ±20V | - | 1.8W (Ta), 143W (Tc) | 3.5 mOhm @ 41A, 10V | 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 20V 750MA SOT-23
|
Paquete: TO-236-3, SC-59, SOT-23-3 |
En existencias132.684 |
|
MOSFET (Metal Oxide) | 20V | 750mA (Ta) | 4.5V, 10V | 2.4V @ 250µA | - | 125pF @ 5V | ±20V | - | 400mW (Ta) | 90 mOhm @ 1.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 200V 18A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias3.328 |
|
MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 4V @ 250µA | 70nC @ 10V | 1300pF @ 25V | ±20V | - | 3.1W (Ta), 130W (Tc) | 180 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 800V TO251-3
|
Paquete: TO-251-3 Stub Leads, IPak |
En existencias7.936 |
|
MOSFET (Metal Oxide) | 800V | 5.7A (Tc) | 10V | 3.9V @ 250µA | 31nC @ 10V | 785pF @ 100V | ±20V | - | 83W (Tc) | 950 mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251 | TO-251-3 Stub Leads, IPak |
||
Vishay Siliconix |
MOSFET N-CH 100V 7.7A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias17.316 |
|
MOSFET (Metal Oxide) | 100V | 7.7A (Tc) | 10V | 4V @ 250µA | 16nC @ 10V | 360pF @ 25V | ±20V | - | 2.5W (Ta), 42W (Tc) | 270 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 100V 10A
|
Paquete: 8-PowerWDFN |
En existencias6.208 |
|
MOSFET (Metal Oxide) | 100V | 10A (Ta), 42A (Tc) | 6V, 10V | 3.5V @ 250µA | 33.3nC @ 10V | 1871pF @ 50V | ±20V | - | 2W (Ta), 35W (Tc) | 13.5 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerDI3333-8 | 8-PowerWDFN |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V POWER56
|
Paquete: 8-PowerTDFN |
En existencias4.976 |
|
MOSFET (Metal Oxide) | 150V | 10A (Ta), 63A (Tc) | 6V, 10V | 4V @ 250µA | 63nC @ 10V | 4480pF @ 75V | ±20V | - | 3.3W (Ta), 136W (Tc) | 12.4 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
Central Semiconductor Corp |
MOSFET N-CH 20V 0.1A SOT-883
|
Paquete: SC-101, SOT-883 |
En existencias4.960 |
|
MOSFET (Metal Oxide) | 20V | 100mA (Ta) | 1.5V, 4V | 900mV @ 250µA | 0.57nC @ 4.5V | 9pF @ 3V | 10V | - | 100mW (Ta) | 3 Ohm @ 10mA, 4V | -65°C ~ 150°C (TJ) | Surface Mount | SOT-883 | SC-101, SOT-883 |
||
Infineon Technologies |
MOSFET N-CH 30V 210A TO-220AB
|
Paquete: TO-220-3 |
En existencias6.080 |
|
MOSFET (Metal Oxide) | 30V | 210A (Tc) | 7V, 10V | 4V @ 250µA | 209nC @ 10V | 8250pF @ 25V | ±20V | - | 3.8W (Ta), 230W (Tc) | 2.8 mOhm @ 76A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC
|
Paquete: TO-247-3 |
En existencias7.932 |
|
MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 5V @ 250µA | 58nC @ 10V | 1144pF @ 100V | ±30V | - | 208W (Tc) | 400 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Diodes Incorporated |
MOSFET N-CH 30V 4.2A SC59
|
Paquete: TO-236-3, SC-59, SOT-23-3 |
En existencias28.050 |
|
MOSFET (Metal Oxide) | 30V | 4.2A (Ta) | 4.5V, 10V | 2.1V @ 250µA | 13.2nC @ 10V | 697pF @ 15V | ±20V | - | 780mW (Ta) | 40 mOhm @ 4.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 500MA SSM
|
Paquete: SC-75, SOT-416 |
En existencias22.698 |
|
MOSFET (Metal Oxide) | 20V | 500mA (Ta) | 1.5V, 5V | 1V @ 1mA | 1.23nC @ 4V | 46pF @ 10V | ±10V | - | 150mW (Ta) | 630 mOhm @ 200mA, 5V | 150°C (TJ) | Surface Mount | SSM | SC-75, SOT-416 |
||
Infineon Technologies |
MOSFET P-CH 40V 10.5A 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias6.304 |
|
MOSFET (Metal Oxide) | 40V | 10.5A (Ta) | 4.5V, 10V | 3V @ 250µA | 110nC @ 10V | 9250pF @ 25V | ±20V | - | 2.5W (Ta) | 15 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET P-CH 60V 160MA TO92-3
|
Paquete: TO-226-3, TO-92-3 (TO-226AA) |
En existencias264.048 |
|
MOSFET (Metal Oxide) | 60V | 160mA (Ta) | 10V | 3.5V @ 1mA | - | 50pF @ 18V | ±20V | - | 625mW (Ta) | 14 Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Fairchild/ON Semiconductor |
MOSFET N CH 600V 76A TO247
|
Paquete: TO-247-3 |
En existencias105.996 |
|
MOSFET (Metal Oxide) | 600V | 76A (Tc) | 10V | 5V @ 250µA | 360nC @ 10V | 14365pF @ 100V | ±20V | - | 595W (Tc) | 41 mOhm @ 38A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 19A POWER56
|
Paquete: 8-PowerTDFN |
En existencias28.656 |
|
MOSFET (Metal Oxide) | 80V | 19A (Ta), 80A (Tc) | 8V, 10V | 4.5V @ 250µA | 86nC @ 10V | 7082pF @ 40V | ±20V | - | 2.5W (Ta), 104W (Tc) | 3.9 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6), Power56 | 8-PowerTDFN |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 20V 18A 8-MLP
|
Paquete: 8-PowerWDFN |
En existencias1.015.068 |
|
MOSFET (Metal Oxide) | 20V | 12A (Ta), 18A (Tc) | 1.5V, 4.5V | 1V @ 250µA | 116nC @ 4.5V | 7860pF @ 10V | ±8V | - | 2.3W (Ta), 41W (Tc) | 8 mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3) | 8-PowerWDFN |
||
onsemi |
MOSFET N-CH 650V 35A TO247
|
Paquete: - |
En existencias1.191 |
|
MOSFET (Metal Oxide) | 650 V | 35A (Tc) | 10V | 5V @ 3.5mA | 145 nC @ 10 V | 4895 pF @ 100 V | ±20V | - | 357W (Tc) | 110mOhm @ 17.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Tagore Technology |
GAN FET HEMT 650V .36OHM 22QFN
|
Paquete: - |
En existencias8.910 |
|
GaNFET (Gallium Nitride) | 650 V | 6.5A (Tc) | 0V, 6V | 2.5V @ 2.8mA | 0.75 nC @ 6 V | 28 pF @ 400 V | ±20V | - | - | 360mOhm @ 500mA, 6V | -55°C ~ 150°C (TJ) | Surface Mount | 22-QFN (5x7) | 22-PowerVFQFN |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
Paquete: - |
En existencias2.661 |
|
MOSFET (Metal Oxide) | 60 V | 7.4A (Ta), 48A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 13.5 nC @ 4.5 V | 1574 pF @ 25 V | ±20V | - | 2.4W (Ta), 100W (Tc) | 17mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN5060-8 | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V POWERDI506
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 86A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 112 nC @ 10 V | 5697 pF @ 20 V | ±20V | - | 3.9W (Ta), 119W (Tc) | 10mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI5060-8 (Type UX) | 8-PowerTDFN |
||
Infineon Technologies |
TRENCH 40<-<100V
|
Paquete: - |
En existencias2.319 |
|
MOSFET (Metal Oxide) | 60 V | 20A (Ta), 120A (Tc) | 6V, 10V | 3.3V @ 52µA | 68 nC @ 10 V | 3000 pF @ 30 V | ±20V | - | 3W (Ta), 107W (Tc) | 3.85mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Diotec Semiconductor |
MOSFET SOT23 P -30V -4A 0.071OHM
|
Paquete: - |
Request a Quote |
|
- | - | 4A | - | - | - | - | - | - | 1W | - | - | Surface Mount | SOT-23 | - |
||
IXYS |
MOSFET N-CH 300V 120A TO247
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 300 V | 120A (Tc) | 10V | 4.5V @ 4mA | 170 nC @ 10 V | 10500 pF @ 25 V | ±20V | - | 735W (Tc) | 11mOhm @ 60A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 500V 13A ITO220
|
Paquete: - |
En existencias11.559 |
|
MOSFET (Metal Oxide) | 500 V | 13A (Tc) | 10V | 3.8V @ 250µA | 39 nC @ 10 V | 1877 pF @ 50 V | ±30V | - | 57W (Tc) | 480mOhm @ 3.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
IXYS |
MOSFET N-CH PLUS220
|
Paquete: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Nexperia USA Inc. |
MOSFET DFN2020MD-6
|
Paquete: - |
En existencias8.937 |
|
MOSFET (Metal Oxide) | 30 V | 5.1A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 5 nC @ 10 V | 157 pF @ 15 V | ±20V | - | 3.3W (Ta) | 72mOhm @ 3.9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN2020MD-6 | 6-UDFN Exposed Pad |