Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH TO220-3
|
Paquete: TO-220-3 |
En existencias3.488 |
|
MOSFET (Metal Oxide) | 40V | 80A (Tc) | 10V | 4V @ 250µA | 151nC @ 10V | 10300pF @ 25V | ±20V | - | 125W (Tc) | 5.2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 75A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias5.648 |
|
MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 4V @ 250µA | 250nC @ 10V | 7670pF @ 50V | ±20V | - | 300W (Tc) | 7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3
|
Paquete: TO-220-3 |
En existencias5.936 |
|
MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4V @ 250µA | 210nC @ 10V | 13800pF @ 50V | ±20V | - | 300W (Tc) | 4.2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 30V 80A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias3.504 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 70µA | 40nC @ 5V | 5203pF @ 15V | ±20V | - | 107W (Tc) | 3.5 mOhm @ 55A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 200V 660MA SOT-223
|
Paquete: TO-261-4, TO-261AA |
En existencias7.168 |
|
MOSFET (Metal Oxide) | 200V | 660mA (Ta) | 4.5V, 10V | 1.8V @ 400µA | 16.1nC @ 10V | 357pF @ 25V | ±20V | - | 1.8W (Ta) | 1.8 Ohm @ 660mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 100V 96A TO-220AB
|
Paquete: TO-220-3 |
En existencias4.704 |
|
MOSFET (Metal Oxide) | 100V | 96A (Tc) | 10V | 4V @ 150µA | 180nC @ 10V | 5150pF @ 50V | ±20V | - | 250W (Tc) | 10 mOhm @ 58A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 20V 92A D2PAK
|
Paquete: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
En existencias3.392 |
|
MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 2.45V @ 250µA | 24nC @ 4.5V | 2150pF @ 10V | ±20V | - | 79W (Tc) | 6 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 30V 7A MICRO8
|
Paquete: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
En existencias39.144 |
|
MOSFET (Metal Oxide) | 30V | 7A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 69nC @ 10V | 2204pF @ 25V | ±20V | - | 1.79W (Ta) | 26 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Micro8? | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 18A TO252
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias3.776 |
|
MOSFET (Metal Oxide) | 30V | 18A (Ta), 46A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 33nC @ 10V | 1333pF @ 15V | ±20V | - | 2.5W (Ta), 50W (Tc) | 5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 75V 4A/7.5A
|
Paquete: 8-PowerSMD, Flat Leads |
En existencias2.864 |
|
MOSFET (Metal Oxide) | 75V | 4A (Ta), 7.5A (Tc) | 4.5V, 10V | 1.6V @ 250µA | 15nC @ 10V | 280pF @ 37.5V | ±16V | - | 4.1W (Ta), 15.5W (Tc) | 130 mOhm @ 5A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (3x3) | 8-PowerSMD, Flat Leads |
||
Nexperia USA Inc. |
MOSFET P-CH 20V 4.7A 6TSOP
|
Paquete: SC-74, SOT-457 |
En existencias174.000 |
|
MOSFET (Metal Oxide) | 20V | 4.7A (Ta) | 1.8V, 4.5V | 700mV @ 250µA | 23nC @ 4.5V | 1820pF @ 10V | ±8V | - | 500mW (Ta), 8.33W (Tc) | 43 mOhm @ 3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 28A TO-220
|
Paquete: TO-220-3 |
En existencias6.096 |
|
MOSFET (Metal Oxide) | 100V | 28A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 1710pF @ 25V | - | - | 107W (Tc) | 52 mOhm @ 14A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 71A TO-220
|
Paquete: TO-220-3 |
En existencias485.460 |
|
MOSFET (Metal Oxide) | 80V | 71A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 3250pF @ 25V | ±25V | - | 160W (Tc) | 16 mOhm @ 35.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 11A TO-220AB
|
Paquete: TO-220-3 |
En existencias145.908 |
|
MOSFET (Metal Oxide) | 60V | 11A (Tc) | 5V | 3V @ 250µA | 11.3nC @ 10V | 350pF @ 25V | ±16V | - | 38W (Tc) | 107 mOhm @ 8A, 5V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 150V 18A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias52.068 |
|
MOSFET (Metal Oxide) | 150V | 18A (Tc) | 10V | 5.5V @ 250µA | 43nC @ 10V | 900pF @ 25V | ±30V | - | 110W (Tc) | 125 mOhm @ 11A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 20V 100A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias60.000 |
|
MOSFET (Metal Oxide) | 20V | 100A (Tc) | 4.5V, 10V | 3V @ 250µA | 44nC @ 4.5V | 2980pF @ 10V | ±20V | - | 2.5W (Ta), 120W (Tc) | 6.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 25V 40A 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias5.296 |
|
MOSFET (Metal Oxide) | 25V | 40A (Tc) | 4.5V, 10V | 2.6V @ 250µA | 161nC @ 10V | 11175pF @ 15V | ±16V | - | 3.5W (Ta), 7.8W (Tc) | 2.7 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Renesas Electronics America |
MOSFET N-CH 200V 20A WPAK
|
Paquete: 8-PowerVDFN |
En existencias4.368 |
|
MOSFET (Metal Oxide) | 200V | 20A (Ta) | 10V | - | 19nC @ 10V | 1200pF @ 25V | ±30V | - | 65W (Tc) | 85 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | WPAK(3F) (5x6) | 8-PowerVDFN |
||
TSC America Inc. |
MOSFET, SINGLE, P-CHANNEL, -30V,
|
Paquete: 8-PowerWDFN |
En existencias5.184 |
|
MOSFET (Metal Oxide) | 30V | 36A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 29.3nC @ 10V | 1829pF @ 15V | ±20V | - | 27.8W (Tc) | 15 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (3x3) | 8-PowerWDFN |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 7A TO-220SIS
|
Paquete: TO-220-3 Full Pack, Isolated Tab |
En existencias6.264 |
|
MOSFET (Metal Oxide) | 600V | 7A (Ta) | 10V | 4.5V @ 350µA | 16nC @ 10V | 490pF @ 300V | ±30V | - | 30W (Tc) | 650 mOhm @ 3.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack, Isolated Tab |
||
Diodes Incorporated |
MOSFET N-CH 100V 40A POWERDI506
|
Paquete: 8-PowerTDFN |
En existencias6.224 |
|
MOSFET (Metal Oxide) | 100V | 40A (Tc) | 10V | 4V @ 250µA | 36nC @ 10V | 2245pF @ 50V | ±20V | - | 1.6W (Ta) | 28 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
||
Diodes Incorporated |
MOSFET P-CH 20V 3.8A TSOT26 T&R
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 3.8A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 8.8 nC @ 4.5 V | 642 pF @ 10 V | ±8V | - | 1.2W (Ta) | 75mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | TSOT-26 | SOT-23-6 Thin, TSOT-23-6 |
||
Taiwan Semiconductor Corporation |
650V, 11A, PDFN88, E-MODE GAN TR
|
Paquete: - |
En existencias9.000 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Diodes Incorporated |
MOSFET BVDSS: 41V~60V TO263 T&R
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 133A (Tc) | 10V | 4V @ 1mA | 46 nC @ 10 V | 2692 pF @ 25 V | ±20V | - | 5W (Ta), 375W (Tc) | 10mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET N-CH 60V 92A 5DFN
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 20A (Ta), 92A (Tc) | 10V | 4V @ 250µA | 20.4 nC @ 10 V | 1500 pF @ 25 V | ±20V | - | 3.7W (Ta), 79W (Tc) | 4.6mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
onsemi |
SILICON CARBIDE (SIC) MOSFET - E
|
Paquete: - |
En existencias2.394 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 36A (Tc) | 18V | 4.4V @ 7mA | 57 nC @ 18 V | 1230 pF @ 800 V | +22V, -10V | - | 172W (Tc) | 87mOhm @ 15A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
IXYS |
MOSFET N-CH 60A TO247
|
Paquete: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microchip Technology |
MOSFET N-CH 800V 44A ISOTOP
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 44A (Tc) | - | 4V @ 5mA | 285 nC @ 10 V | 17650 pF @ 25 V | - | - | - | 150mOhm @ 500mA, 10V | - | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |