Imagen |
Nº de pieza |
Fabricantes |
Descripción |
Paquete |
En existencias |
Cantidad |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 54A DPAK
|
Paquete: TO-252-3, DPak (2 Leads + Tab), SC-63 |
En existencias3.184 |
|
MOSFET (Metal Oxide) | 20V | 54A (Tc) | 4.5V, 10V | 3V @ 250µA | 17nC @ 4.5V | 1060pF @ 10V | ±20V | - | 3.8W (Ta), 71W (Tc) | 14 mOhm @ 26A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 60V 280MA SOT-323
|
Paquete: SC-70, SOT-323 |
En existencias2.384 |
|
MOSFET (Metal Oxide) | 60V | 280mA (Ta) | 4.5V, 10V | 1.4V @ 26µA | 1.5nC @ 10V | 43pF @ 25V | ±20V | - | 500mW (Ta) | 3.5 Ohm @ 220mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT323-3 | SC-70, SOT-323 |
||
Infineon Technologies |
MOSFET N-CH 30V 21A 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias18.840 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta) | 4.5V, 10V | 2.35V @ 250µA | 45nC @ 4.5V | 3860pF @ 15V | ±20V | - | 2.5W (Ta) | 3.8 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Microsemi Corporation |
MOSFET N-CH 1200V 19A SOT227
|
Paquete: SOT-227-4, miniBLOC |
En existencias5.568 |
|
MOSFET (Metal Oxide) | 1200V | 19A | 10V | 5V @ 2.5mA | 290nC @ 10V | 6200pF @ 25V | ±30V | - | 520W (Tc) | 570 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 70A TO220W
|
Paquete: TO-220-3 |
En existencias2.768 |
|
MOSFET (Metal Oxide) | 60V | 70A (Ta) | 4.5V, 10V | 2.3V @ 1mA | 87nC @ 10V | 5450pF @ 10V | ±20V | - | 45W (Tc) | 6.4 mOhm @ 35A, 10V | 150°C (TJ) | Through Hole | TO-220(W) | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 650V 48A ISOTOP
|
Paquete: ISOTOP |
En existencias3.328 |
|
MOSFET (Metal Oxide) | 650V | 48A | 10V | 5V @ 250µA | 134nC @ 10V | 3800pF @ 25V | ±30V | - | 450W (Tc) | 110 mOhm @ 22.5A, 10V | 150°C (TJ) | Chassis Mount | ISOTOP? | ISOTOP |
||
STMicroelectronics |
MOSFET N-CH 620V 3.8A TO-220
|
Paquete: TO-220-3 |
En existencias7.248 |
|
MOSFET (Metal Oxide) | 620V | 3.8A (Tc) | 10V | 4.5V @ 50µA | 14nC @ 10V | 450pF @ 50V | ±30V | - | 70W (Tc) | 1.95 Ohm @ 1.9A, 10V | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
MOSFET IFX OPTIMOS TO247
|
Paquete: TO-247-3 |
En existencias4.960 |
|
MOSFET (Metal Oxide) | 200V | 100A (Tc) | 10V | 4V @ 270µA | 102nC @ 10V | 5094pF @ 50V | ±20V | - | 313W (Tc) | 11.5 mOhm @ 60A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
||
Microsemi Corporation |
MOSFET N-CH 100V 278A SP4
|
Paquete: SP4 |
En existencias4.384 |
|
MOSFET (Metal Oxide) | 100V | 278A | 10V | 4V @ 5mA | 700nC @ 10V | 20000pF @ 25V | ±30V | - | 780W (Tc) | 5 mOhm @ 125A, 10V | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 |
||
IXYS |
MOSFET N-CH 800V 39A SOT-227B
|
Paquete: SOT-227-4, miniBLOC |
En existencias3.232 |
|
MOSFET (Metal Oxide) | 800V | 39A | 10V | 5V @ 8mA | 200nC @ 10V | 12000pF @ 25V | ±30V | - | 694W (Tc) | 190 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Diodes Incorporated |
MOSFET N-CH 20V 11.7A SOT323
|
Paquete: 6-UDFN Exposed Pad |
En existencias2.288 |
|
MOSFET (Metal Oxide) | 20V | 11.7A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 84nC @ 10V | 3372pF @ 10V | ±12V | - | 610mW (Ta) | 9.5 mOhm @ 7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | U-DFN2020-6 (Type E) | 6-UDFN Exposed Pad |
||
STMicroelectronics |
MOSFET N-CH 75V 120A TO-220
|
Paquete: TO-220-3 |
En existencias565.428 |
|
MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 4V @ 250µA | 218nC @ 10V | 5000pF @ 25V | ±20V | - | 310W (Tc) | 7.5 mOhm @ 70A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 7.4A IPAK
|
Paquete: TO-251-3 Short Leads, IPak, TO-251AA |
En existencias34.248 |
|
MOSFET (Metal Oxide) | 250V | 7.4A (Tc) | 10V | 5V @ 250µA | 20nC @ 10V | 700pF @ 25V | ±30V | - | 2.5W (Ta), 55W (Tc) | 420 mOhm @ 3.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 200V 5A I-PAK
|
Paquete: TO-251-3 Short Leads, IPak, TO-251AA |
En existencias143.988 |
|
MOSFET (Metal Oxide) | 200V | 5A (Tc) | 10V | 4V @ 250µA | 23nC @ 10V | 300pF @ 25V | ±20V | - | 43W (Tc) | 600 mOhm @ 2.9A, 10V | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
||
Vishay Siliconix |
MOSFET P-CH 200V 6.5A TO-220AB
|
Paquete: TO-220-3 |
En existencias223.404 |
|
MOSFET (Metal Oxide) | 200V | 6.5A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 700pF @ 25V | ±20V | - | 74W (Tc) | 800 mOhm @ 3.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 3A 8-SOIC
|
Paquete: 8-SOIC (0.154", 3.90mm Width) |
En existencias20.544 |
|
MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4.5V, 10V | 3V @ 250µA | 21nC @ 10V | 714pF @ 30V | ±20V | Schottky Diode (Isolated) | 900mW (Ta) | 110 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
IXYS |
SIC AND MULTICHIP DISCRETE
|
Paquete: - |
En existencias564 |
|
SiC (Silicon Carbide Junction Transistor) | 1200 V | 54A (Tc) | 15V | 3.6V @ 12mA | 107 nC @ 15 V | 3360 pF @ 1000 V | +15V, -4V | - | - | 42mOhm @ 40A, 15V | -40°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Vishay Siliconix |
MOSFET P-CH 30V 14.4A/35A PPAK
|
Paquete: - |
En existencias9.000 |
|
MOSFET (Metal Oxide) | 30 V | 14.4A (Ta), 35A (Tc) | 4.5V, 10V | 2.8V @ 250µA | 71 nC @ 10 V | 3345 pF @ 15 V | ±20V | - | 3.8W (Ta), 52.1W (Tc) | 11.4mOhm @ 14.4A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8SH | PowerPAK® 1212-8SH |
||
Sanken Electric USA Inc. |
MOSFET 60V/85A/0.004
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 85A | 10V | 3V @ 1mA | - | 11500 pF @ 10 V | ±30V | - | 150W (Tc) | 157mOhm @ 10A, 10V | -55°C ~ 150°C | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
Paquete: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
onsemi |
MOSFET N-CH 80V 90A DPAK
|
Paquete: - |
En existencias7.224 |
|
MOSFET (Metal Oxide) | 80 V | 90A (Tc) | 10V | 4V @ 250µA | 54 nC @ 10 V | 2530 pF @ 40 V | ±20V | - | 150W (Tj) | 7.9mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 700V 1.7A/9.6A 8DFN
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 700 V | 1.7A (Ta), 9.6A (Tc) | 10V | 4V @ 250µA | 14.5 nC @ 10 V | 900 pF @ 100 V | ±20V | - | 4.1W (Ta), 138W (Tc) | 660mOhm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN-EP (5x6) | 8-PowerVDFN |
||
Nexperia USA Inc. |
PXN7R7-25QL/SOT8002/MLPAK33
|
Paquete: - |
En existencias17.811 |
|
MOSFET (Metal Oxide) | 25 V | 11.8A (Ta), 32A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 16.6 nC @ 10 V | 770 pF @ 12.5 V | ±20V | - | 1.7W (Ta), 12.5W (Tc) | 7.7mOhm @ 11.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | MLPAK33 | 8-PowerVDFN |
||
Infineon Technologies |
N-CHANNEL POWER MOSFET
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 15A (Tc) | 10V | 3.9V @ 675µA | 63 nC @ 10 V | 1600 pF @ 25 V | ±20V | - | 156W (Tc) | 280mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
DTMOS VI TOLL PD=230W F=1MHZ
|
Paquete: - |
En existencias6.354 |
|
MOSFET (Metal Oxide) | 650 V | 30A (Ta) | 10V | 4V @ 1.27mA | 47 nC @ 10 V | 2780 pF @ 300 V | ±30V | - | 230W (Tc) | 90mOhm @ 15A, 10V | 150°C | Surface Mount | TOLL | 8-PowerSFN |
||
Alpha & Omega Semiconductor Inc. |
N
|
Paquete: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 13A (Ta), 56A (Tc) | 8V, 10V | 3.7V @ 250µA | 35 nC @ 10 V | 1780 pF @ 75 V | ±20V | - | 6.2W (Ta), 119W (Tc) | 16mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Micro Commercial Co |
MOSFET N-CH 40V 20A DFN3333-8
|
Paquete: - |
En existencias29.919 |
|
MOSFET (Metal Oxide) | 40 V | 20A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 15 nC @ 10 V | 750 pF @ 20 V | ±20V | - | 2.34W (Ta), 21W (Tc) | 14mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DFN3333 | 8-VDFN Exposed Pad |
||
Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 1.7A, 100V
|
Paquete: - |
En existencias18.000 |
|
MOSFET (Metal Oxide) | 100 V | 1.7A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 18 nC @ 10 V | 800 pF @ 25 V | ±20V | - | 1.76W (Tc) | 310mOhm @ 1A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |